JPS5837388B2 - Kisouseichiyouhouhou - Google Patents

Description

[Detailed description of the invention] The present invention relates to a gas phase, elongation method.

In the field of electronics industry, the formation of films by vapor phase growth methods is widely used.

This method is superior to the usual vapor deposition method, sputtering method, plating method, etc. in terms of the purity of the film, the presence or absence of mutual damage to the substrate, and the fact that there is no step breakage at the step portion.

For example, when molybdenum (MO) is precipitated, MoCl
! , by reducing it in hydrogen.

In this case, since the reduction temperature of the halide is very high, it is necessary to raise the temperature of the growth substrate, which has the drawback of easily causing deterioration of the substrate.

This becomes a further problem when it comes to vapor phase growth methods for aluminum, for example.

In other words, it is difficult to apply the conventional thermal decomposition method of organic compounds of aluminum to the semiconductor industry due to the contamination of carbon, etc., so a method of reducing a halide such as AlCl3 with hydrogen may be considered, but AI! CI! 3 is 1
? The reaction temperature converted to AI! This is because the temperature is much higher than the melting point of , making it difficult to grow.

The present invention has been devised in view of the above points, and provides a method that facilitates the lengthening of single or compound films by adding a new plasma reaction to the vapor phase growth method.

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below by way of an example with reference to the drawings.

The reaction apparatus includes a reaction vessel main body 1, a lid 2, a high frequency coil 3 for plasma generation, and a substrate heater 4.

The reaction vessel main body 1 is a quartz tube, and growth substrates 5, 6, .

The support base 7 is made of silicon carbide, graphite, or the like, and is heated by applying power to an external heater 4, such as a high-frequency coil.

In this example, the substrate was kept at 300°C.

Further, the lid 2 is removable and covers the growth substrates 5, 6...
... can be taken in and taken out, and is connected to a vacuum pump (not shown) via an exhaust port 8.

The lid 2 and the reaction vessel body 1 are configured to have good sealing properties.

On the other hand, the reaction vessel main body 1 is provided with a gas inlet 9, through which hydrogen gas and AlCl3 gas are introduced.

The pressure inside this reaction vessel main body 1 is reduced to about 10 Torr.

This is to improve plasma generation, which will be described later, and the degree of vacuum can be adjusted by the vacuum pump.

Further, the AICII3 gas is supplied in the form of bubbling through the solution.

In this way, hydrogen gas, AlC
13 gas is introduced, and sufficient power, for example 300 W, to generate plasma is applied to the high frequency coil.

As a result, A
l grows.

At this time, the substrate temperature was 300° C., and a good Al film could be formed at a temperature below the melting point.

It was confirmed that Al could be grown even if the plasma generation part and the substrate installation part were separated.

If the plasma generation part and the substrate installation part are separated, the substrate will not be damaged by the plasma, and the growth status of the aluminum film can be observed well, which has great practical value.

Note that in order to downsize the device, plasma may be generated in the substrate installation portion.

In the above embodiment, the shape of a single film was explained as an example.
It is also possible to form a compound film by including two or more types of chemical substances in the vapor phase growth source gas.

An advantage of the present invention is that growth can be performed while keeping the substrate temperature sufficiently low.

Therefore, it is particularly effective to apply the method of the present invention to the growth of low-melting-point substances.

[Brief explanation of drawings]

The figure is a sectional view for explaining a method according to an embodiment of the present invention.

Claims (1)

[Claims] 1. Introducing a gas containing aluminum chloride and hydrogen into a reduced pressure plasma generation region, and introducing the gas containing a growth substance reduced by hydrogen within the plasma generation region at a location separated from the plasma generation region. a heated substrate disposed at a temperature below the melting point temperature of aluminum, and growing an aluminum film on the substrate at a temperature below the melting point temperature of aluminum.