JPS5840694B2 - Manufacturing method of gas/humidity sensor - Google Patents
Manufacturing method of gas/humidity sensorInfo
- Publication number
- JPS5840694B2 JPS5840694B2 JP53101101A JP10110178A JPS5840694B2 JP S5840694 B2 JPS5840694 B2 JP S5840694B2 JP 53101101 A JP53101101 A JP 53101101A JP 10110178 A JP10110178 A JP 10110178A JP S5840694 B2 JPS5840694 B2 JP S5840694B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ultrafine
- manufacturing
- humidity sensor
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 11
- 239000011882 ultra-fine particle Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001282 iso-butane Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
本発明はガス・湿度センサの製造方法にかかり、平均粒
径が10〜百数十Aの範囲の金属酸化物超微粒子の集合
体から構成され、ガスや水蒸気等に敏感に感応するセン
サをきわめて容易に製造することのできる方法を提供し
ようとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a gas/humidity sensor, which is composed of an aggregate of ultrafine metal oxide particles with an average particle size in the range of 10 to over 100 amps, and is resistant to gases, water vapor, etc. The object is to provide a method by which highly sensitive sensors can be manufactured very easily.
10Aから百数十Aの平均粒径の金属酸化物超微粒子で
感応膜を構成すると、ガスや水蒸気に対して敏感に抵抗
値変化を示すことを見出した。It has been found that when a sensitive film is composed of ultrafine metal oxide particles with an average particle diameter of 10 A to over 100 A, the resistance changes sensitively to gas and water vapor.
本発明はこのような感応体の感度をさらに向上させるこ
とができるものである。The present invention can further improve the sensitivity of such a receptor.
以下、その詳細について実施例をあげて説明する。Hereinafter, the details will be explained by giving examples.
第1図に示すように、渣ずガラスやセラミックスなどの
絶縁基板1上に対をなす電極2,3を形成してから、そ
の上にさらに金属酸化物たとえば錫、チタン、亜鉛ある
いはニッケル等の金属酸化物の超微粒子膜4を形成する
。As shown in FIG. 1, a pair of electrodes 2 and 3 are formed on an insulating substrate 1 made of glass or ceramics, and then a metal oxide such as tin, titanium, zinc or nickel is further applied thereon. A metal oxide ultrafine particle film 4 is formed.
錫酸化物の超微粒子膜の作製を例にあげて、第2図を用
いて説明する。The production of an ultrafine particle film of tin oxide will be explained using FIG. 2 as an example.
通常使用されている真空蒸着装置11中の試料ホルダー
12に、第1図に示すような電極2,3を有する基板1
を、その電極2,3側の面が図面下方向を向くように取
付ける。A substrate 1 having electrodes 2 and 3 as shown in FIG.
is attached so that the surfaces on the electrodes 2 and 3 side face downward in the drawing.
また、蒸着用ボード13にSn、もしくは5nO1また
はS n 02といった蒸発材料14をセットする。Further, an evaporation material 14 such as Sn, 5nO1, or Sn02 is set on the evaporation board 13.
それから、排気口15に接続された真空ポンプ(図示せ
ず)を作動させて、装置11内を10 ’ Torr
のオーダーの真空度にさせた後、酸素ガス導入口16
のコックを開いて、装置11内に02ガスを導入し、そ
の圧力をたとえば0.5Torr程度に保つ。Then, a vacuum pump (not shown) connected to the exhaust port 15 is activated to reduce the inside of the device 11 to 10' Torr.
After the degree of vacuum is on the order of , the oxygen gas inlet 16
The cock is opened, 02 gas is introduced into the device 11, and its pressure is maintained at, for example, about 0.5 Torr.
次に、蒸発用電源17によりボード13に通電して発熱
させ、02ガス雰囲気のもとで蒸発材料14を十数秒か
ら数分間蒸発させる。Next, the board 13 is energized by the evaporation power source 17 to generate heat, and the evaporation material 14 is evaporated for a few seconds to several minutes in an 02 gas atmosphere.
たとえば、蒸発材料14としてSnを選ぶと、70〜8
0A。For example, if Sn is selected as the evaporation material 14, 70 to 8
0A.
4■の電力を1分間ボード13に印加すると、約1μm
の厚さのSn酸化物の超微粒子膜4が第1図に示すよう
に基板1上に形成された。When a power of 4■ is applied to the board 13 for 1 minute, approximately 1μm
An ultrafine particle film 4 of Sn oxide was formed on the substrate 1 as shown in FIG.
ここでは、蒸発材料を蒸発させるのに抵抗加熱による方
法を例にあげて述べたが、他の方法、たとえば、誘導加
熱法や赤外線加熱法でもよいことは言うまでもない。Here, a method using resistance heating has been described as an example to evaporate the evaporation material, but it goes without saying that other methods such as induction heating or infrared heating may also be used.
上述の工程を経た基板1を所定の容器中に設置し、02
ガスを流量1t/分の割合で流した状態にしたのち、高
周波電力を印加することにより前記容器内に酸素ガスプ
ラズマを発生させ、その酸素ガスプラズマ雰囲気中に前
記基板を約30分間放置する。The substrate 1 that has gone through the above steps is placed in a predetermined container, and
After the gas is allowed to flow at a flow rate of 1 t/min, oxygen gas plasma is generated in the container by applying high frequency power, and the substrate is left in the oxygen gas plasma atmosphere for about 30 minutes.
この工程を活性化処理と呼ぶことにする。This process will be referred to as activation processing.
金属酸化物超微粒子はガスや水蒸気などの外的作用因子
に対してきわめて敏感に感応するが、上述のような活性
化処理が施されると、一層高感度になる。Ultrafine metal oxide particles are extremely sensitive to external agents such as gas and water vapor, but when they are subjected to the activation treatment described above, they become even more sensitive.
たとえば、Sn酸化物の超微粒子の、イソブタンガスに
対する感度は、第3図に示すように、02ガスプラズマ
を形成するための高周波印加電力の増加とともに増大し
、ある一定値以上になるとほぼ飽和する。For example, as shown in Figure 3, the sensitivity of ultrafine Sn oxide particles to isobutane gas increases with the increase in high-frequency applied power for forming 02 gas plasma, and becomes almost saturated when it exceeds a certain value. .
このときのイソブタンガスに対する感度は錫酸化物超微
粒子に対して酸素ガスプラズマによる活性化処理を施す
前の状態に比べて、約1.8倍に増大している。At this time, the sensitivity to isobutane gas is approximately 1.8 times higher than that before the tin oxide ultrafine particles are activated by oxygen gas plasma.
なお、このときの測定は、イソブタンガスを0.2容量
多含む空気を、300℃の温度に保持されている錫酸化
物超微粒子膜に接しさせて行なった。Note that this measurement was performed by bringing air containing 0.2 volumes of isobutane gas into contact with a tin oxide ultrafine particle film maintained at a temperature of 300°C.
このように、本発明の製造方法によれば、金属酸化物超
微粒子で構成した膜を酸素プラズマに触れさせることに
より、その外的作用因子に対する感度を大巾に向上させ
ることができ、高感度のガス・湿度センサを容易に製造
することができる。As described above, according to the manufacturing method of the present invention, by exposing a film made of ultrafine metal oxide particles to oxygen plasma, its sensitivity to external agents can be greatly improved, resulting in high sensitivity. gas/humidity sensors can be easily manufactured.
第1図は本発明にかかるガス・湿度センサの製造方法に
よって作られるガス・湿度センサの一例を示す平面図、
第2図は錫酸化物超微粒子膜を製造するための装置の一
例を示す図、第3図は錫酸化物超微粒子膜の活性化処理
による効果を説明するための図である。
1・・・・・・基板、2,3・・・・・・電極、4・・
・・・・酸化物超微粒子膜。FIG. 1 is a plan view showing an example of a gas/humidity sensor manufactured by the gas/humidity sensor manufacturing method according to the present invention;
FIG. 2 is a diagram showing an example of an apparatus for manufacturing an ultrafine tin oxide particle film, and FIG. 3 is a diagram for explaining the effect of activation treatment of the ultrafine tin oxide particle film. 1... Substrate, 2, 3... Electrode, 4...
...Oxide ultrafine particle film.
Claims (1)
十Aの範囲の金属酸化物超微粒子の集合体から構成され
る超微粒子抵抗膜を形成した後、酸素プラズマに触れさ
せて、前記抵抗膜を活性化し、前記抵抗膜の電気抵抗値
が被検ガスの種類および濃度によって変化することを利
用してガスおよび水蒸気を検知できるようにすることを
特徴とするガス・湿度センサの製造方法。 2 金属酸化物超微粒子膜を錫酸化物の超微粒子で形成
することを特徴とする特許請求の範囲第1項に記載のガ
ス・湿度センサの製造方法。[Scope of Claims] 1. After forming an ultrafine particle resistance film composed of an aggregate of ultrafine metal oxide particles with an average particle size in the range of 10 to 100-odd A, on an electrically insulating support substrate, The resistive film is activated by contact with oxygen plasma, and gases and water vapor can be detected by utilizing the fact that the electrical resistance value of the resistive film changes depending on the type and concentration of the gas to be detected. A method for manufacturing a gas/humidity sensor. 2. The method of manufacturing a gas/humidity sensor according to claim 1, wherein the metal oxide ultrafine particle film is formed of tin oxide ultrafine particles.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53101101A JPS5840694B2 (en) | 1978-08-18 | 1978-08-18 | Manufacturing method of gas/humidity sensor |
| US06/066,332 US4313338A (en) | 1978-08-18 | 1979-08-14 | Gas sensing device |
| CA333,788A CA1123052A (en) | 1978-08-18 | 1979-08-15 | Gas sensing device and method of manufacturing same |
| DE2933394A DE2933394C2 (en) | 1978-08-18 | 1979-08-17 | Gas detector and process for its manufacture |
| GB7928825A GB2029583B (en) | 1978-08-18 | 1979-08-17 | Gas sensing device and method of manufacturing the same |
| DE2953771A DE2953771C1 (en) | 1978-08-18 | 1979-08-17 | Gas detector |
| US06/275,254 US4362765A (en) | 1978-08-18 | 1981-06-19 | Method of manufacturing a gas sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53101101A JPS5840694B2 (en) | 1978-08-18 | 1978-08-18 | Manufacturing method of gas/humidity sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527953A JPS5527953A (en) | 1980-02-28 |
| JPS5840694B2 true JPS5840694B2 (en) | 1983-09-07 |
Family
ID=14291688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53101101A Expired JPS5840694B2 (en) | 1978-08-18 | 1978-08-18 | Manufacturing method of gas/humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840694B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3509781B2 (en) | 2001-06-25 | 2004-03-22 | 株式会社半導体理工学研究センター | Method for manufacturing semiconductor device |
-
1978
- 1978-08-18 JP JP53101101A patent/JPS5840694B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5527953A (en) | 1980-02-28 |
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