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JPS5841510B2 - Electron radiation image forming method - Google Patents
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JPS5841510B2 - Electron radiation image forming method - Google Patents

Electron radiation image forming method

Info

Publication number
JPS5841510B2
JPS5841510B2 JP13686876A JP13686876A JPS5841510B2 JP S5841510 B2 JPS5841510 B2 JP S5841510B2 JP 13686876 A JP13686876 A JP 13686876A JP 13686876 A JP13686876 A JP 13686876A JP S5841510 B2 JPS5841510 B2 JP S5841510B2
Authority
JP
Japan
Prior art keywords
insulating film
electrode
absorbing liquid
ray absorbing
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13686876A
Other languages
Japanese (ja)
Other versions
JPS5362528A (en
Inventor
長穂 細野
崇明 小沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP13686876A priority Critical patent/JPS5841510B2/en
Publication of JPS5362528A publication Critical patent/JPS5362528A/en
Publication of JPS5841510B2 publication Critical patent/JPS5841510B2/en
Expired legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)
  • Exposure Or Original Feeding In Electrophotography (AREA)
  • Combination Of More Than One Step In Electrophotography (AREA)

Description

【発明の詳細な説明】 本発明はX線などの放射線を吸収する高絶縁性液体を使
用して放射線画像を得る方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of obtaining radiographic images using highly insulating liquids that absorb radiation such as X-rays.

従来のX線などの放射線(以下簡単1こX線という)を
吸収する高絶縁性液体を使用した放射線画像(以下同様
にX線画像という)作成方法は特開昭5’0−8779
3号、特開昭50−125694号、特開昭50−43
7176号(米国特許3873833号、)等に開示さ
れでいる。
A conventional method for creating radiation images (hereinafter also referred to as X-ray images) using a highly insulating liquid that absorbs radiation such as X-rays (hereinafter simply referred to as X-rays) is disclosed in Japanese Patent Application Laid-Open No. 5'0-8779.
No. 3, JP-A-50-125694, JP-A-50-43
No. 7176 (US Pat. No. 3,873,833) and the like.

すなわち、第1図に示すよう1こ互いに間隙を持たせて
ほぼ平行に配置した一対の電極1,2間にX線を吸収す
ること1こより電子と正極性イオンまたは正負極性のイ
オンを発生する高絶縁性のX線吸収液体3を充満すると
共に、このX線吸収液体3中1こ一方の電極に接して絶
縁性の受像シート4を配置し、上記電極1,2間に電圧
を印加しながらX線源51こよりX線照射し、被検体6
を透過したX線をX線吸収液体3に曝射する方法であり
、この方法によればX線の曝射量に応じて絶縁性のX線
吸収液体3が電離され、上族された電子と正極性イオン
、または正負極性イオンはそれぞれ対応する電極1,2
側に移動し、上記受像シート4上に静電潜像が形成され
る。
That is, as shown in Figure 1, by absorbing X-rays between a pair of electrodes 1 and 2 arranged almost parallel to each other with a gap, electrons and ions of positive polarity or ions of positive and negative polarity are generated. A highly insulating X-ray absorbing liquid 3 is filled, an insulating image receiving sheet 4 is placed in contact with one electrode in the X-ray absorbing liquid 3, and a voltage is applied between the electrodes 1 and 2. while irradiating X-rays from the X-ray source 51,
In this method, the insulating X-ray absorbing liquid 3 is ionized according to the amount of X-ray irradiation, and the supergroup electrons are ionized. and positive polarity ions, or positive and negative polarity ions are respectively connected to the corresponding electrodes 1 and 2.
side, and an electrostatic latent image is formed on the image receiving sheet 4.

得られた静電潜像は公知の電子写真法により現像するこ
とにより可視像化される。
The obtained electrostatic latent image is developed into a visible image by a known electrophotographic method.

この方法では、もっばら受像シート4をX線吸収液体3
中に浸した形で動作せしめられるものであるので、静電
潜像形成及び潜像保持のためX線吸収液体3は抵抗が十
分高いことが必要であり、実際一旦形成された潜像を十
分保持するためには1014Ω−軸以上の体積固有抵抗
をX線吸収液体3に持たせぬことが必要となるため低抵
抗のX線吸収液体は使用できない。
In this method, the image receiving sheet 4 is exposed to the X-ray absorbing liquid 3.
Since the X-ray absorbing liquid 3 is operated by being immersed in the liquid, it is necessary that the resistance of the X-ray absorbing liquid 3 is sufficiently high in order to form an electrostatic latent image and retain the latent image. In order to maintain this, it is necessary that the X-ray absorbing liquid 3 does not have a volume resistivity of 1014 Ω-axis or more, so a low-resistance X-ray absorbing liquid cannot be used.

また感度を上げるためX線吸収の強いX線吸収液体を用
いることが望ましいが、強いX線吸収を示すX線吸収液
体は殆んどが不安定な残溶剤であり、光線や熱などで分
解しで低い抵抗値1こなったり、受像シート4をX線吸
収液体31こ浸漬するとき受像シート4に耐着していた
X線吸収液体31こ可溶な不純物が溶解して異常な放電
を生じたりしでしまう。
Furthermore, in order to increase sensitivity, it is desirable to use an X-ray absorbing liquid with strong X-ray absorption, but most X-ray absorbing liquids that exhibit strong X-ray absorption are unstable residual solvents that decompose due to light or heat. When the image receiving sheet 4 is immersed in the X-ray absorbing liquid 31, soluble impurities in the X-ray absorbing liquid 31 that have adhered to the image receiving sheet 4 may dissolve and cause abnormal discharge. It can happen.

またX線の吸収効率を上げるためX線吸収液体3内1こ
CB r 4 tC■■■3等の固体を溶解した場合、
受像シート4を取り出したとき、その表面1こ耐着した
液体が乾燥とともにこれらの固体が析出し低抵抗になっ
て静電潜像を乱してしま・う。
In addition, in order to increase the absorption efficiency of X-rays, if one solid such as CB r 4 tC■■■3 is dissolved in the X-ray absorbing liquid 3,
When the image-receiving sheet 4 is taken out, the liquid that has adhered to one surface of the sheet dries and these solids precipitate, resulting in low resistance and disturbing the electrostatic latent image.

また、X線吸収液体3は外気と接触することがあるので
外気から種々の汚染を受は不安定となってしまう。
Furthermore, since the X-ray absorbing liquid 3 may come into contact with the outside air, it may receive various types of contamination from the outside air and become unstable.

また、受像シート4はX線吸収液体3内に浸漬されるの
で不純物が混入しでしまう。
Furthermore, since the image receiving sheet 4 is immersed in the X-ray absorbing liquid 3, impurities may be mixed in therein.

また、受像シート4は湿った状態であるので乾燥させぬ
必要があり、その際に潜像が消失したり、あるいはX線
吸収液体3が現像剤に混入して現像剤を劣化しでしまう
Further, since the image receiving sheet 4 is in a wet state, it is necessary not to dry it, and in that case, the latent image may disappear, or the X-ray absorbing liquid 3 may be mixed into the developer and deteriorate the developer.

また、X線吸収液体3は受像シート4を出し入れする際
にその液酸が減少してしまうためにその使用量が増大し
かつ安全性の面でも問題となる等の種々の不具合を有し
ている。
In addition, the X-ray absorbing liquid 3 has various problems, such as the amount of liquid acid reduced when the image receiving sheet 4 is taken out and put in, which increases the amount used and poses a safety problem. There is.

本発明は上記事情1こ鑑みなされたもので、その目的は
X線吸液体を完全に封入したチャンバーを用いて静電潜
像を形成することができるようにした電子放射線画像形
成方法を提供するものである。
The present invention has been made in view of the above-mentioned circumstances, and its purpose is to provide an electron radiation image forming method that can form an electrostatic latent image using a chamber completely enclosed with an X-ray absorbing liquid. It is something.

以下図面を用いで詳しく説明する。This will be explained in detail below using the drawings.

第2図は本発明1こ用いるチャンバーAの断面を示し、
X線透過性の高い電極7と絶縁性フィルム8を絶縁性の
スペーサー9を用いて一定の間隔(約1店0でほぼ平行
になるよ・うに対設し、その間隙部1こX線吸収液体1
0を封入して外部との接触が無いようにしである。
FIG. 2 shows a cross section of chamber A used in the present invention 1,
An electrode 7 with high X-ray transparency and an insulating film 8 are placed opposite each other at a certain distance (approximately parallel to each other) using an insulating spacer 9, and one part of the gap absorbs X-rays. liquid 1
0 is sealed so that there is no contact with the outside.

ここで、チャンバーAの内部1こ気泡があれば異常放電
の発生原因となるのでX線吸収液体10を封入する際気
泡が残存しないように特に注意が必要である。
Here, if there is any bubble inside the chamber A, it will cause abnormal discharge, so special care must be taken to ensure that no bubbles remain when filling the X-ray absorbing liquid 10.

絶縁性フィルム8は、例え(よ25μの厚さを持ったポ
リエステルフィルムの如く十分(こ薄くかつ機械的強度
が保証されでいるものであることが解像力の低下を防ぎ
、しかもチャンバーAの破損を少なくするために望まし
いと共に、この絶縁性フィルムは特に平面性が要求され
るので表向に凹凸の少ない平面性に勝れたものを選択す
る必要がある。
The insulating film 8 should be sufficiently thin and have guaranteed mechanical strength, such as a polyester film with a thickness of 25 μm, to prevent a decrease in resolution and also to prevent damage to the chamber A. This is desirable in order to reduce the number of bumps, and since this insulating film is particularly required to have flatness, it is necessary to select a film that has excellent flatness with few irregularities on the surface.

スペーサー9は高絶縁性であると共にX線吸収液体10
1こ溶解しない素材よりなる均一の厚さの板材が使用さ
れ、例えば厚さ1北程度のデルリン板等が使用される。
Spacer 9 is highly insulating and X-ray absorbing liquid 10
A plate material with a uniform thickness made of a material that does not melt is used, such as a Delrin plate with a thickness of about 1 mm.

封入されるX線吸収液体10はX線の照射を受けてX線
を吸収し、電子を放出する液体物質でX線励起を受けな
い場合の体積固有抵抗、)51012Ω−軸以上である
ものが使用されることが望ましい。
The enclosed X-ray absorbing liquid 10 is a liquid substance that absorbs X-rays and emits electrons when irradiated with X-rays, and has a volume resistivity of 51012Ω-axis or more when not excited by X-rays. It is desirable to use it.

例えば常温、常圧において液体であるC C14* C
H2’ 2 ?CH2Br■、CF■2C4■、C2
■−■5■、CHBr3等が使用可能であり、さら1こ
溶剤中にX線吸収率の高いCBr4 、CHI3 、X
e、Kr等を溶解することが望ましい。
For example, C C14* C which is liquid at normal temperature and normal pressure
H2' 2? CH2Br■, CF■2C4■, C2
■-■5■, CHBr3, etc. can be used, and CBr4, CHI3,
It is desirable to dissolve e, Kr, etc.

実施例ではCCV4の液体1こCB r4を重量%で5
0%溶解したものである。
In the example, 1 liter of CCV4 liquid was 5% by weight of CBr4.
0% dissolved.

このX線吸収液体10の封入1こ際しては前述の気泡の
存在だけでなく、荷電粒子や導電性粒子等の不純物の混
入にも十分注意を払って防がねばならない。
When filling the X-ray absorbing liquid 10, it is necessary to pay sufficient attention not only to the presence of the above-mentioned air bubbles but also to prevent contamination of impurities such as charged particles and conductive particles.

上記のようなチャンバーNを用いてX線画像を形成する
)こは次のような手順で行なわれる。
Forming an X-ray image using the chamber N as described above is carried out according to the following procedure.

すなわち、チャンバーAの絶縁性フィルム8に電極12
を密着するように押し当て、該電極12とチャンバー人
の電極7と1こ高電圧を印加すると同時に電極7側に配
置された被検体13に前方のX線源14からX線を照射
して絶縁性フィルム8に電界放出により静電潜像を形成
する。
That is, the electrode 12 is placed on the insulating film 8 of the chamber A.
A high voltage is applied to the electrode 12 and the electrode 7 of the chamber person, and at the same time, the subject 13 placed on the electrode 7 side is irradiated with X-rays from the X-ray source 14 in front. An electrostatic latent image is formed on the insulating film 8 by field emission.

このことを詳細に説明すると、チャンバーA(こX線が
照射されるとチャンバーム−内のX線吸収液体10内(
こX線のエネルギーが吸収されてイオン対が生成される
To explain this in detail, chamber A (when X-rays are irradiated, the X-ray absorbing liquid 10 in the chamber
The energy of this X-ray is absorbed and ion pairs are generated.

このX線吸収液体10内のイオン対は当該液体10内の
電界により移動する。
Ion pairs within this X-ray absorbing liquid 10 are moved by an electric field within the liquid 10.

いま仮に、電極121こ負極性の高電玉を印加するとX
線吸収液体10内に生成された負イオン又は電子は電極
7に向って移動しやがて再結合する。
Now, if we apply a high voltage of negative polarity to the electrode 121, then
Negative ions or electrons generated within the radiation absorbing liquid 10 move toward the electrode 7 and eventually recombine.

一方、正イオンは絶縁性フィルム8の内面まで移動し、
縁絶性フィルム8と電極12との間の極小空隙の電界強
度を高める。
On the other hand, positive ions move to the inner surface of the insulating film 8,
The electric field strength in the tiny gap between the insulating film 8 and the electrode 12 is increased.

この結果、チャンバーAにX線が照射された領域の微小
空隙の電界強度が高まり電極12より電界放出により放
電が可能となり、絶縁性フィルム8の外表面1こ負電荷
1こよる静電潜像が形成される。
As a result, the electric field strength in the microgap in the region where the X-rays are irradiated into the chamber A increases, and discharge is enabled by field emission from the electrode 12, and an electrostatic latent image is formed on the outer surface of the insulating film 8 by 1 negative charge. is formed.

X線照射後電極12を接地し、電極7と短絡したまま電
極12をチャンバーAより剥離する。
After the X-ray irradiation, the electrode 12 is grounded and removed from the chamber A while being short-circuited to the electrode 7.

その後に、絶縁性フィルム8の外表面に形成された潜像
は公知の電子写真法の現像法で正極性トナーを用いで現
像される。
Thereafter, the latent image formed on the outer surface of the insulating film 8 is developed using a positive polarity toner by a known electrophotographic development method.

さらに、この絶縁性フィルム8の上に紙又はポリエステ
ル・フィルム等の絶縁性フィルムを載置してこの上から
負極性コロナ放電により転写すれば良い。
Further, an insulating film such as paper or polyester film may be placed on this insulating film 8 and the image may be transferred from thereon by negative corona discharge.

前記絶縁性フィルム8と電極12との間の微小空隙にお
ける放電は所謂修正パッシェンの法則1こよってなされ
、微小空隙長さが約6μm以下の電界放出1こよる放電
となる。
The discharge in the microgap between the insulating film 8 and the electrode 12 is caused by the so-called modified Paschen's law 1, and the discharge is caused by field emission 1 in which the microgap length is about 6 μm or less.

実際には絶縁性フィルム8と電極12との間の微小空隙
長さは数μ扉程度と考えれば良い。
In reality, the length of the microgap between the insulating film 8 and the electrode 12 can be considered to be about several μm.

また、この電界放出による放電預域では微小空隙(こお
ける放電破壊強度が空隙長さに依存せず一定となる。
In addition, in the discharge deposit area due to this field emission, the discharge breakdown strength in micro-gaps is constant regardless of the gap length.

このために絶縁性)了ルム8と電極12との間の微小空
隙長さが6μm以下であればこの空隙長さにおいで多少
のばらつきが存在してもむらのないかつ再現性の良い作
像が可能である。
For this reason, if the microgap length between the insulating lume 8 and the electrode 12 is 6 μm or less, even if there is some variation in the gap length, uniform and reproducible imaging is possible. is possible.

なお、第4図1こ示す如く、チャンバーAの絶縁性フィ
ルム8と電極12との間に潜像受容用の絶縁性フィルム
11を介在させて前述と同様に操作すると、絶縁性フィ
ルム8と絶縁性フィルム11との間の電界放出によって
潜像受容用の絶@匪フィルム11に静電潜像を形成する
こと−b≦できる。
As shown in FIG. 4, if the insulating film 11 for latent image reception is interposed between the insulating film 8 of the chamber A and the electrode 12 and the same operation as described above is performed, the insulating film 8 and the insulating An electrostatic latent image can be formed on the latent image-receiving absolute film 11 by field emission between the electrostatic film 11 and the electrostatic film 11 -b≦.

この時、一方の絶縁比フィルム8,11の表面に界面活
性剤などの物質を塗布しでおけば電界放出が起り易く良
好な画像を得ることができる。
At this time, if a substance such as a surfactant is coated on the surface of one of the insulation ratio films 8, 11, field emission can easily occur and a good image can be obtained.

具体例 I X線吸収液体10としてCCl4にCBr4を重量%で
50%溶解せしめた液を用い、電極12はAl板ヲ43
000のエメリーで軽く磨き充分長時間放置した厚み1
11にのものを用いた。
Specific Example I The X-ray absorbing liquid 10 is a liquid in which 50% by weight of CBr4 is dissolved in CCl4, and the electrode 12 is an Al plate 43.
Lightly polished with 000 emery and left for a long time to a thickness of 1
11 was used.

電極12にはX線照射と同時(こ−26K V電距印加
し、X線照射は線源より1mの位置でX線管電圧75K
Vp、管電流50mA、照射時間Q、1sec として
解像力チャートを撮影したところ良好な画像が得られた
Simultaneously with X-ray irradiation (-26K V electrical distance is applied to the electrode 12, X-ray irradiation is performed at a position 1 m from the radiation source at an X-ray tube voltage of 75K).
When a resolution chart was photographed with Vp, tube current of 50 mA, and irradiation time Q of 1 sec, a good image was obtained.

具体例 2 X線吸収液体10としでC14にCB r4を重量%で
50%溶解せしめた液を用い、電極12にはネサ電極を
用いた。
Specific Example 2 A liquid in which 50% by weight of CB r4 was dissolved in C14 was used as the X-ray absorbing liquid 10, and a Nesa electrode was used as the electrode 12.

そして、電極12にはX線照射と同時(こ+24V電壓
印加し、X線照射は線源より1mの位置でX線管電圧7
5に、Vp1管電管電流50m熱射時間0.2secで
20rnmのA1階差を撮影したところ良い画像が得ら
れた。
Then, at the same time as the X-ray irradiation (+24 V voltage is applied to the electrode 12, the X-ray tube voltage is 7.
5, a good image was obtained when an A1 level difference of 20 nm was photographed with a Vp1 tube current of 50 m and a heat radiation time of 0.2 sec.

なお、使用した液体現像用トナーは、厚みが100μm
のMylarフィルム表向の電位+25Vで透過濃度と
して約1が得られる1〜ナーを用いた。
The liquid developing toner used had a thickness of 100 μm.
1 to 30% was used, which gave a transmission density of about 1 at a potential of +25 V on the surface of the Mylar film.

本発明は前述のように構成したので次のような優れた利
点を有する。
Since the present invention is configured as described above, it has the following excellent advantages.

まず第一に、X線吸収液体10は完全に密封された状態
であるから、外気と接触することが全く無いのでゴミや
汚染物が混入することがなく長時間安定して使用できる
と共に、多少毒性を有するX線吸収液体でも安全1こ使
用できる。
First of all, since the X-ray absorbing liquid 10 is completely sealed, it never comes into contact with the outside air, so it can be used stably for a long time without getting mixed with dust or contaminants. Even toxic X-ray absorbing liquids can be safely used.

第一二1こ、X線吸収液体10中1こ潜像受容用の絶縁
性フィルムを浸漬することが無いで従来の方法で非常に
問題となった不純物混入が解決できる。
First, it is not necessary to immerse the insulating film for receiving a latent image in the X-ray absorbing liquid 10, and the contamination of impurities, which has been a serious problem in the conventional method, can be solved.

第三(こ、潜像がチャンバーAの外側の絶縁性フィルム
8の外表面に形成されるため1こX線吸収液体10の電
気体積抵抗率を1012Ω−鼾 の低い抵抗率を有する
ものでも使用可能となる。
Third, since a latent image is formed on the outer surface of the insulating film 8 outside the chamber A, the electrical volume resistivity of the X-ray absorbing liquid 10 can be reduced to 1012Ω-sore even if it has a low resistivity. It becomes possible.

第四に、静電潜像形成が完全に乾式で行なわれるので、
従来の方法においてX線吸収液体10を乾燥させる間に
潜像が消失したり、あるいはX線吸収液体10が現像剤
に混入して現像剤劣化を招いたりすることが無い。
Fourth, since electrostatic latent image formation is completely dry,
In the conventional method, the latent image does not disappear while the X-ray absorbing liquid 10 is being dried, or the X-ray absorbing liquid 10 is not mixed into the developer, causing deterioration of the developer.

第五(こ、チャンバーA内部の電荷パターンに応じた電
極12からの電界放出により絶縁性フィルム8の外表面
にチャンバー入内部の電荷パターンと逆極性の電荷パタ
ーンを形成し、次いで電極7゜12を接地し、引きはが
すことで絶縁性フィルム8あるいは絶縁性フィルム11
の表面に現像可能なる電荷パターンを形成して静電潜像
としているので、解像力が高いと共1こ、放電のムラが
な(1゜うのない静電潜像が得られる。
Fifth (here, a charge pattern with the opposite polarity to the charge pattern inside the chamber A is formed on the outer surface of the insulating film 8 by field emission from the electrode 12 according to the charge pattern inside the chamber A, and then the electrode 7゜12 Insulating film 8 or insulating film 11 is grounded and peeled off.
Since a developable charge pattern is formed on the surface to form an electrostatic latent image, an electrostatic latent image with high resolution and uniform discharge (1°) can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の電子放射線画像形成方法を示す概略図、
第2図は本発明に用いるチャンバーの概略断面図、第3
図はそのチャンバーを用いてX線画像を形成する方法の
説明図、第4図は他の形成方法の説明図である。 7は電極、8,11は絶縁性フィルム、9はスペーサー
、10はX線吸収液体、12は電極、13は被検体、1
4はX線源、Aはチャンバー。
FIG. 1 is a schematic diagram showing a conventional electron radiation image forming method;
Figure 2 is a schematic sectional view of the chamber used in the present invention;
The figure is an explanatory diagram of a method of forming an X-ray image using the chamber, and FIG. 4 is an explanatory diagram of another method of forming an X-ray image. 7 is an electrode, 8 and 11 are insulating films, 9 is a spacer, 10 is an X-ray absorbing liquid, 12 is an electrode, 13 is a subject, 1
4 is the X-ray source, A is the chamber.

Claims (1)

【特許請求の範囲】[Claims] 1 放射線誘過性の高い電極Iと絶縁性フィルム8を絶
縁性のスペーサー9を用いて平行に配置し、その間隙部
にX線吸収液体10を封入してなるチャンバーAの絶縁
性フィルム8の外向に直接、あるいは潜像受容用の絶縁
性フィルム11を介して電極12を重ね、両電極7,1
2間に電圧を印加しながら前記電極7側に配置された被
検体13の前方よりX線照射した後、電極7と電極12
とを接地し、絶縁性フィルム8、あるいは潜像受容用の
絶縁性フィルム11と電極12を引きはなし、絶縁性フ
ィルム8あるいは絶縁性フィルム111こ電界放出によ
る静電潜像を形成することを特徴とする電子放射線画像
形成方法。
1. The insulating film 8 of the chamber A is formed by arranging an electrode I having high radiation-inducing properties and an insulating film 8 in parallel using an insulating spacer 9, and filling the gap with an X-ray absorbing liquid 10. The electrodes 12 are stacked outward directly or via an insulating film 11 for receiving a latent image, and both electrodes 7,1
After applying X-rays from the front of the subject 13 placed on the electrode 7 side while applying a voltage between the electrodes 7 and 12,
The insulating film 8 or the insulating film 11 for receiving a latent image is separated from the electrode 12, and an electrostatic latent image is formed by field emission on the insulating film 8 or the insulating film 111. An electron radiation image forming method.
JP13686876A 1976-11-16 1976-11-16 Electron radiation image forming method Expired JPS5841510B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13686876A JPS5841510B2 (en) 1976-11-16 1976-11-16 Electron radiation image forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13686876A JPS5841510B2 (en) 1976-11-16 1976-11-16 Electron radiation image forming method

Publications (2)

Publication Number Publication Date
JPS5362528A JPS5362528A (en) 1978-06-05
JPS5841510B2 true JPS5841510B2 (en) 1983-09-12

Family

ID=15185392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13686876A Expired JPS5841510B2 (en) 1976-11-16 1976-11-16 Electron radiation image forming method

Country Status (1)

Country Link
JP (1) JPS5841510B2 (en)

Also Published As

Publication number Publication date
JPS5362528A (en) 1978-06-05

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