JPS5841661B2 - Manufacturing method for resin-encapsulated semiconductor device - Google Patents
Manufacturing method for resin-encapsulated semiconductor deviceInfo
- Publication number
- JPS5841661B2 JPS5841661B2 JP53058581A JP5858178A JPS5841661B2 JP S5841661 B2 JPS5841661 B2 JP S5841661B2 JP 53058581 A JP53058581 A JP 53058581A JP 5858178 A JP5858178 A JP 5858178A JP S5841661 B2 JPS5841661 B2 JP S5841661B2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- resin
- cavity
- heat dissipation
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
この発明は放熱板を有する樹脂封止形半導体装置の製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a resin-sealed semiconductor device having a heat sink.
一般に、大電力用の半導体装置では動作時に発生する熱
を列部に放散させるために、半導体素子に放熱板が接合
固定される。Generally, in a semiconductor device for high power use, a heat sink is bonded and fixed to a semiconductor element in order to dissipate heat generated during operation to a row section.
そして、上記半導体素子に電気的に接続されるリード片
をもったリードフレームを上記放熱板に固定し、この放
熱板を成形金型の空所底面に載置したのち、上記空所に
絶縁性合成樹脂を注入して、上記半導体素子や放熱板を
上記樹脂でモールドすることにより製造される。Then, a lead frame having lead pieces that are electrically connected to the semiconductor element is fixed to the heat sink, and this heat sink is placed on the bottom of the cavity of the mold, and then an insulating film is placed in the cavity. It is manufactured by injecting a synthetic resin and molding the semiconductor element and heat sink with the resin.
ところで、半導体素子とともに上記樹脂でモールドされ
る放熱板はその放熱作用を効果的に発揮させるために、
上記樹脂モールド部の表面から露出させる必要がある。By the way, in order for the heat dissipation plate molded with the above-mentioned resin together with the semiconductor element to effectively exhibit its heat dissipation effect,
It is necessary to expose it from the surface of the resin molded part.
しかるに、従来では第9図のように放熱板50をリード
線接続用のリード片51を介して成形金型52.53に
片持ちさせた状態に設定して、絶縁性合成樹脂54を注
入していたから、放熱板50と成形金型52.53の空
所底面55との密着性が悪く、上記樹脂54が上記放熱
板50と空所底面55との間に入り易い傾向にあり、こ
のため樹脂モールド後において、本来露出されるべき放
熱板50が上記モールド部54に埋入されることになり
、放熱効果の低下を招くおそれがあった。However, conventionally, as shown in FIG. 9, the heat dissipation plate 50 is set in a cantilevered state on the molding die 52,53 via the lead piece 51 for connecting the lead wire, and the insulating synthetic resin 54 is injected. Therefore, the adhesion between the heat dissipation plate 50 and the cavity bottom surface 55 of the molding die 52, 53 is poor, and the resin 54 tends to enter between the heat dissipation plate 50 and the cavity bottom surface 55. After molding, the heat dissipation plate 50, which should originally be exposed, is embedded in the molded portion 54, which may lead to a decrease in heat dissipation effect.
このため、第10a図のように上記リード片51とは反
対方向に延びて成形金型52.53に挾持される放熱板
加圧用のリード片56を用意し、成形金型52.53の
空所底面54に設置された放熱板50を上記リード片5
1.56で押えた状態に設定して、上記樹脂54を注入
する手段が提案されている。For this purpose, as shown in FIG. 10a, a lead piece 56 for pressurizing the heat dissipation plate is prepared which extends in the opposite direction to the lead piece 51 and is clamped by the molding die 52.53. The heat sink 50 installed on the bottom surface 54 is connected to the lead piece 5.
A method has been proposed in which the resin 54 is injected while the resin is held at a pressure of 1.56 mm.
しかるに、この手段では樹脂モールド後において、上記
放熱板加圧用のリード片56が第10b図のように不必
要なものとして樹脂モールド部54からはみ出すため、
このリード片56を切り落さなければならず、その作業
が面倒で工程数も増え生産性に劣る欠点を有する。However, with this method, after resin molding, the lead piece 56 for pressurizing the heat sink protrudes from the resin molded part 54 as an unnecessary part as shown in FIG. 10b.
This lead piece 56 must be cut off, which is troublesome, increases the number of steps, and has the drawback of poor productivity.
したがって、この発明は成形金型内に放熱板押圧部材を
配置し、上記金型空所底面に設置された放熱板に上記金
型に支持されている押圧部材に対応する透孔を形成して
、上記放熱板を上記抑圧部材で上記底面に弾性的に押圧
した状態に設定したのち、上記空所内に絶縁性合成樹脂
を注入することにより、上記樹脂によって放熱板を埋入
させることなく適正に樹脂モールドが行なえ、放熱性の
向上を図ることができ、しかも作業工程数が減少され、
生産性の向上を図り得る樹脂封止形半導体装置の製造方
法を提供することを目的とする。Therefore, the present invention arranges a heat sink pressing member in the molding die, and forms a through hole corresponding to the pressing member supported by the mold in the heat sink installed on the bottom surface of the mold cavity. After setting the heat dissipation plate in a state where it is elastically pressed against the bottom surface by the suppressing member, an insulating synthetic resin is injected into the space, so that the heat dissipation plate can be properly positioned without being buried in the resin. Resin molding can be performed, improving heat dissipation, and reducing the number of work steps.
An object of the present invention is to provide a method for manufacturing a resin-sealed semiconductor device that can improve productivity.
以下、この発明の一実施例を図面にしたがって説明する
。An embodiment of the present invention will be described below with reference to the drawings.
まず、第1図のようなリードフレーム1を弔意する。First, let's mourn the lead frame 1 as shown in FIG.
このリードフレーム1は一方向に延びる多数のリード線
接続用のリード片2(2□〜2n)が連結片3およびフ
レーム片4に一体的に連結保持されて、いわゆるシング
ル・イン・ライン形として形成されている。This lead frame 1 has a large number of lead pieces 2 (2□ to 2n) for connecting lead wires extending in one direction, which are integrally connected and held to a connecting piece 3 and a frame piece 4, making it a so-called single-in-line type. It is formed.
5は半導体素子6がろう付材層7(第2図)を介して固
定された放熱板である。5 is a heat sink to which a semiconductor element 6 is fixed via a brazing material layer 7 (FIG. 2).
この放熱板5には後述する押圧部材に対応して同軸の透
孔17が形成されている。A coaxial through hole 17 is formed in this heat sink plate 5 in correspondence with a pressing member to be described later.
この放熱板5の素子設定面に上記リードフレーム1のリ
ード片2を第2図のように絶縁層8を介して取付ける。The lead piece 2 of the lead frame 1 is attached to the element setting surface of the heat sink 5 with an insulating layer 8 interposed therebetween as shown in FIG.
ついで、上記半導体素子6と各リード片2とをワイヤボ
ンディングで接続する。Next, the semiconductor element 6 and each lead piece 2 are connected by wire bonding.
しかる後、上記放熱板5を第3図のように成形金型9,
10の空所11内に収納設置する。After that, the heat dissipating plate 5 is placed in a molding die 9, as shown in FIG.
It is stored and installed in the empty space 11 of 10.
この金型9には上記空所11内に進退可能な放熱板押圧
部材12が支持されており、さらにこの押圧部材12に
はばね13によって先端側へのばね力が付勢されている
。This mold 9 supports a heat dissipation plate pressing member 12 that can move forward and backward into the cavity 11, and furthermore, this pressing member 12 is biased by a spring 13 with a spring force toward the tip side.
上記押圧部材12の先端で上記放熱板5を空所11の底
面14に押圧した状態で第4図のように溶融した絶縁性
合成樹脂15を上記空所11内に注入して上記半導体6
を樹脂モールドする。With the heat dissipation plate 5 pressed against the bottom surface 14 of the cavity 11 with the tip of the pressing member 12, melted insulating synthetic resin 15 is injected into the cavity 11 as shown in FIG.
molded in resin.
上記樹脂15の固結後、金型9,10から上記樹脂モー
ルド部15を取り出し、各リード片2を連結片3やフレ
ーム片4から切り離せば、第5図のように上記樹脂モー
ルド部15から放熱板5の一部16が露出した状態の樹
脂封止形半導体装置が得られる。After the resin 15 is solidified, the resin mold part 15 is taken out from the molds 9 and 10, and each lead piece 2 is separated from the connecting piece 3 and the frame piece 4, and as shown in FIG. A resin-sealed semiconductor device is obtained in which a portion 16 of the heat sink 5 is exposed.
ここで、成形金型9,10の空所11内に収納した放熱
板5を抑圧部材12で空所底面14に対して弾性的に押
圧した状態で、上記空所11に絶縁性合成樹脂15を注
入するから、上記放熱板5と上記底面14との密着性が
よくなってこれら両者5,14間への樹脂15の入り込
みを防止でき、このため樹脂モールド後において、放熱
板5の一部16が確実に露出され放熱作用を有効に発揮
させることができる。Here, while the heat dissipation plate 5 housed in the cavity 11 of the molding molds 9 and 10 is elastically pressed against the cavity bottom surface 14 by the suppressing member 12, the insulating synthetic resin 15 is placed in the cavity 11. Since the heat sink 5 and the bottom surface 14 are injected, the adhesion between the heat sink 5 and the bottom surface 14 is improved, and the resin 15 can be prevented from entering between the two 5 and 14. Therefore, after resin molding, a part of the heat sink 5 is injected. 16 is reliably exposed and the heat dissipation effect can be effectively exhibited.
しかも押圧部材12をモールド後に除去するといった手
間もなく、作業性が良い。In addition, there is no need to remove the pressing member 12 after molding, resulting in good workability.
さらに、上記抑圧部材12に対応してこれより小径の透
孔17を上記放熱板5に形成したから、この透孔17に
よって放熱面積が大きくなり、放熱作用が一層効果的に
なるうえ、この透孔17と、押圧部材12に対応して樹
脂モール1部15に形成された透孔18(第5図)とを
半導体装置の取付用ビス孔として利用できる。Furthermore, since the through holes 17 with a smaller diameter are formed in the heat dissipation plate 5 in correspondence with the suppressing members 12, the heat dissipation area becomes larger due to the through holes 17, and the heat dissipation effect becomes even more effective. The hole 17 and a through hole 18 (FIG. 5) formed in the resin molding 1 portion 15 corresponding to the pressing member 12 can be used as a screw hole for mounting a semiconductor device.
また、第6図のように、上記放熱板5に形成された透孔
17に嵌合する位置決め用突部19を成形金型9,10
の空所底面14に形成しておけば、上記放熱板5が所定
の位置からずれるおそれもなく樹脂モールドすることが
できる。Further, as shown in FIG.
If it is formed on the bottom surface 14 of the cavity, the heat dissipation plate 5 can be resin-molded without fear of shifting from the predetermined position.
第7a図は他の実施例を示し、上記放熱板5に形成され
て上記抑圧部材12の先端面に当接する微細な環状の凹
凸部20を上記押圧部材12の軸廻りに形成したもので
、この場合は上記実施例と同様の効果を奏するほか、放
熱板5の変形や押圧部材12の摩耗を抑制することがで
きる。FIG. 7a shows another embodiment, in which a minute annular uneven portion 20 is formed on the heat dissipation plate 5 and comes into contact with the tip end surface of the suppressing member 12 around the axis of the pressing member 12, In this case, in addition to producing the same effects as in the above embodiment, deformation of the heat sink 5 and wear of the pressing member 12 can be suppressed.
つまり、放熱板5と空所底面14との間の密着性を上げ
るために、上記空所11に注入される樹脂15の圧力よ
りも強い圧力で上記放熱板5を押圧する必要があり、そ
の場合放熱板5に歪や反りを生じたり、あるいは抑圧部
材12の先端面の摩耗が促進されやすくなるばかりか、
上記先端面に傷が生じるおそれもある。That is, in order to increase the adhesion between the heat sink 5 and the cavity bottom surface 14, it is necessary to press the heat sink 5 with a pressure stronger than the pressure of the resin 15 injected into the cavity 11. In this case, the heat dissipation plate 5 may be distorted or warped, or the distal end surface of the suppressing member 12 may be easily worn out.
There is also a possibility that the tip surface may be damaged.
しかるに、この実施例のように微細な凹凸部20を放熱
板5に形成することにより、抑圧部材12の比較的弱い
加圧力でも上記凹凸部20を介して放熱板5を強い接触
圧で押し付けることができ、したがって放熱板5の変形
や抑圧部材12の先端面の摩耗を抑制することができ、
さらに押圧部材12の先端面に傷がついても、第7b図
のように上記押圧によって凹凸部20がつぶれて傷口に
充填されるから、上記先端面に樹脂通路などが形成され
ることがなく、樹脂モールドが良好になされる。However, by forming the fine uneven portions 20 on the heat sink 5 as in this embodiment, even if the pressing force of the suppressing member 12 is relatively weak, the heat sink 5 can be pressed with a strong contact pressure through the uneven portions 20. Therefore, it is possible to suppress deformation of the heat sink 5 and wear of the front end surface of the suppressing member 12,
Furthermore, even if the tip end surface of the pressing member 12 is scratched, the uneven portion 20 is crushed by the pressure as shown in FIG. 7b and the wound is filled, so that no resin passage is formed in the tip end surface. The resin mold is made well.
第8図はさらに他の実施例を示し、放熱板5に形成され
る凹凸部20を空所11内に充填される樹脂15と接触
する部位まで延出したもので、この構成にすると、放熱
板5と上記樹脂15との結合関係が強力になり、さらに
半導体素子6を位置決めするための目安として上記凹凸
部20を利用できるほか、上記半導体素子6の接合用の
ろう材層7のはみ出しを阻止することができる。FIG. 8 shows still another embodiment, in which the uneven portion 20 formed on the heat dissipation plate 5 extends to the part where it comes into contact with the resin 15 filled in the cavity 11. With this configuration, the heat dissipation The bonding relationship between the plate 5 and the resin 15 is strengthened, the uneven portion 20 can be used as a guide for positioning the semiconductor element 6, and the protrusion of the brazing material layer 7 for bonding the semiconductor element 6 can be prevented. can be prevented.
ところで、上記各実施例では、シングル・イン・ライン
形のリードフレームで説明したが、シュアル・イン・ラ
イン形のリードフレームを用いるものでも、上記と同様
の効果を奏することは勿論である。Incidentally, in each of the above embodiments, a single-in-line type lead frame is used, but it goes without saying that the same effects as described above can be obtained even if a true-in-line type lead frame is used.
以上のようにこの発明によれば、成形金型の空所内に進
退可能、かつ弾性力の付与された放熱板押圧部材により
、抑圧部材に対応する透孔を有し、かつ上記空所底面に
設置された放熱板を上記底面に対して弾性的に押圧させ
た状態で、上記空所内に樹脂を注入したから、上記放熱
板と上記底面との間に樹脂が入り込むのが確実に防止さ
れて、放熱板を適正に樹脂モールドに埋入することがで
き、加えて放熱板に形成した透孔によって放熱面積が拡
大化されることにより放熱性能の向上を図ることができ
、しか゛も成形後に上記押圧部材をいちいち取り除くと
いった手間を要することなく、作業が能率的に行なえる
樹脂封止形半導体装置の製造方法を提供することができ
る。As described above, according to the present invention, the heat dissipation plate pressing member, which can move forward and backward into the cavity of the molding die and is given elastic force, has a through hole corresponding to the suppression member and is attached to the bottom surface of the cavity. Since the resin is injected into the cavity while the installed heat sink is elastically pressed against the bottom surface, the resin is reliably prevented from entering between the heat sink and the bottom surface. , the heat sink can be properly embedded in the resin mold, and the heat dissipation area can be expanded by the through holes formed in the heat sink, thereby improving heat dissipation performance. It is possible to provide a method for manufacturing a resin-sealed semiconductor device that allows work to be carried out efficiently without requiring the effort of removing the pressing members one by one.
第1図ないし第5図はこの発明に係る樹脂封止形半導体
装置の製造方法の一例を工程順に示す説明図、第6図な
いし第8図は他の実施例の説明図、第9図および第10
a図、第10b図は従来例の説明図である。
1・・・リードフレーム、2・・・リード片、5・・・
放熱板、6・・・半導体素子、8・・・絶縁層、9,1
0・・・成形金型、11・・・空所、12・・・放熱板
押圧部材、13・・・ばね、14・・・空所底面、15
・・・絶縁性合成樹脂、16・・・放熱板の露出部、1
7・・・透孔、19・・・位置決め突部、20・・・凹
凸部。1 to 5 are explanatory diagrams showing an example of the manufacturing method of a resin-sealed semiconductor device according to the present invention in the order of steps, FIGS. 6 to 8 are explanatory diagrams of other embodiments, and FIGS. 10th
Figures a and 10b are explanatory diagrams of conventional examples. 1...Lead frame, 2...Lead piece, 5...
Heat sink, 6... Semiconductor element, 8... Insulating layer, 9, 1
0... Molding die, 11... Hollow space, 12... Heat sink pressing member, 13... Spring, 14... Hollow bottom surface, 15
... Insulating synthetic resin, 16 ... Exposed part of heat sink, 1
7... Through hole, 19... Positioning protrusion, 20... Uneven part.
Claims (1)
続用リード片をもったリードフレームを絶縁層を介して
接着し、上記半導体素子とリード片とを電気的に接続し
て、上記放熱板を成形金型の空所底面に設置するととも
に、上記金型に支持され、かつ金型空所内に進退可能に
設定された放熱板抑圧部材に対応して同軸の透孔を上記
放熱板に形成し、上記押圧部材に放熱板側への弾性力を
付与して、この放熱板押圧部材で上記放熱板を上記空所
底面に弾性的に押圧したのち、絶縁性合成樹脂を空所内
に注入して上記半導体素子とともに放熱板を、その一部
を露出させた状態に上記樹脂でモールドしてなる樹脂封
止形半導体装置の製造方法。 2 上記成形金型の空所底面に放熱板に形成された透孔
に嵌合する位置決め突部を形成してなる特許請求の範囲
第1項記載の樹脂封止形半導体装置の製造方法。 3 上記抑圧部材の軸廻りに位置してこの抑圧部材の先
端面に当接する微細な凹凸部を放熱板に形成してなる特
許請求の範囲第1項または第2項記載の樹脂封止形半導
体装置の製造方法。 4 上記放熱板に形成される凹凸部を成形金型空所内に
注入される合成樹脂の接触部位まで延出してなる特許請
求の範囲第3項記載の樹脂封止形半導体装置の製造方法
。[Claims] 1. A lead frame having lead pieces for connecting lead wires is adhered to a heat sink to which a semiconductor element is bonded and fixed via an insulating layer, and the semiconductor element and the lead pieces are electrically connected. Then, the heat dissipation plate is installed on the bottom surface of the cavity of the mold, and a coaxial through-hole is provided corresponding to the heat dissipation plate suppressing member that is supported by the mold and is set to be movable into the mold cavity. is formed on the heat sink, the pressing member is given an elastic force toward the heat sink, the heat sink pressing member elastically presses the heat sink against the bottom of the cavity, and then the insulating synthetic resin is A method of manufacturing a resin-sealed semiconductor device, in which a heat sink is injected into a cavity and a heat sink is molded with the resin with a portion thereof exposed, together with the semiconductor element. 2. The method of manufacturing a resin-sealed semiconductor device according to claim 1, wherein a positioning protrusion that fits into a through hole formed in a heat sink is formed on the bottom surface of the cavity of the molding die. 3. The resin-sealed semiconductor according to claim 1 or 2, wherein the heat dissipation plate has a minute unevenness that is located around the axis of the suppressing member and comes into contact with the front end surface of the suppressing member. Method of manufacturing the device. 4. The method of manufacturing a resin-sealed semiconductor device according to claim 3, wherein the uneven portion formed on the heat sink extends to a contact area of the synthetic resin injected into the mold cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53058581A JPS5841661B2 (en) | 1978-05-16 | 1978-05-16 | Manufacturing method for resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53058581A JPS5841661B2 (en) | 1978-05-16 | 1978-05-16 | Manufacturing method for resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54149468A JPS54149468A (en) | 1979-11-22 |
| JPS5841661B2 true JPS5841661B2 (en) | 1983-09-13 |
Family
ID=13088415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53058581A Expired JPS5841661B2 (en) | 1978-05-16 | 1978-05-16 | Manufacturing method for resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5841661B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218103A (en) * | 1988-07-05 | 1990-01-22 | Ono Tire Kogyosho:Kk | Tyre repair method of large construction vehicle |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3172553D1 (en) * | 1980-11-28 | 1985-11-07 | Toshiba Kk | Method for manufacturing a module for a fiber optic link |
| DE68927295T2 (en) * | 1988-07-08 | 1997-05-07 | Oki Electric Ind Co Ltd | SYNTHETIC-SEALED SEMICONDUCTOR COMPONENT |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5369581A (en) * | 1976-12-03 | 1978-06-21 | Toshiba Corp | Manufacture for resin sealed type semiconductor device |
-
1978
- 1978-05-16 JP JP53058581A patent/JPS5841661B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218103A (en) * | 1988-07-05 | 1990-01-22 | Ono Tire Kogyosho:Kk | Tyre repair method of large construction vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54149468A (en) | 1979-11-22 |
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