JPS5843182B2 - How to solder two parts - Google Patents
How to solder two partsInfo
- Publication number
- JPS5843182B2 JPS5843182B2 JP54010775A JP1077579A JPS5843182B2 JP S5843182 B2 JPS5843182 B2 JP S5843182B2 JP 54010775 A JP54010775 A JP 54010775A JP 1077579 A JP1077579 A JP 1077579A JP S5843182 B2 JPS5843182 B2 JP S5843182B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- insulating oil
- layer
- pellet
- molten solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/013—Manufacture or treatment of die-attach connectors
- H10W72/01308—Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は母材と被取付体とを半田付は方法、特に放熱
板を兼ねる母材としての基板上に、被取付体としての半
導体ペレットを半田付けする半導体装置の製造方法に好
適な半田付は方法に関するもので、そのペレットマウン
ト工程において、半田層の酸化防止を図ることを主な目
的とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for soldering a base material and an object to be attached, and in particular to a method for soldering a semiconductor pellet as an object to be attached to a substrate as a base material that also serves as a heat sink. Soldering suitable for the manufacturing method is related to the method, and its main purpose is to prevent oxidation of the solder layer in the pellet mounting process.
現在例えばトランジスタ等の半導体装置を製造するため
には、ペレットマウント工程を経ている。Currently, in order to manufacture semiconductor devices such as transistors, a pellet mounting process is used.
このペレットマウント工程は、一般に放熱板を兼ねる基
板上にペレットを半田付けして固着する工程であって、
次のような作業を行っている場合が多い。This pellet mounting process is a process in which pellets are generally soldered and fixed onto a board that also serves as a heat sink, and
They often perform tasks such as the following:
すなわち、1ず第1図に示すように、基板1の半田付は
予定位置a上に半田片2を載置しておき、つぎに、これ
らを加熱炉中へ導き半田片2を溶融させるとともに、溶
融した半田2′上に、なじみ易くするために微摺動させ
ながらペレット3を供給して半田付けを行っている。That is, as shown in FIG. 1, first, solder pieces 2 of the board 1 are placed on a predetermined position a, and then they are introduced into a heating furnace to melt the solder pieces 2. , the pellet 3 is supplied onto the molten solder 2' while being slightly slid to make it easier to solder.
ところでこのペレットマウントに関しては、固着して製
造完了した半導体装置の寿命を劣化させないために、半
田の熱酸化防止を図る必要がある。By the way, regarding this pellet mount, it is necessary to prevent thermal oxidation of the solder in order to prevent it from deteriorating the life span of a semiconductor device that has been manufactured by being stuck.
したがって従来より第2図に示すように、加熱炉4は、
基板1及び半田片2を低温(約250℃以下)のプリヒ
ータ5で予熱してから、高温250℃〜350℃のヒー
タ6で半田片2を溶融して、半田2′としている。Therefore, conventionally, as shown in FIG. 2, the heating furnace 4 is
The board 1 and the solder piece 2 are preheated by a preheater 5 at a low temperature (approximately 250°C or less), and then the solder piece 2 is melted by a heater 6 at a high temperature of 250°C to 350°C to form solder 2'.
この時に周囲をカバー7にて覆って、カバー7内に不活
性ガスとしてのN2ガスを充満させて半田2の熱酸化防
止を行っている。At this time, the surrounding area is covered with a cover 7, and the inside of the cover 7 is filled with N2 gas as an inert gas to prevent thermal oxidation of the solder 2.
しかしカバー7内にN2ガスを常に完全に充満させる技
術は、現実には極めて困難であった。However, in reality, the technique of completely filling the cover 7 with N2 gas is extremely difficult.
しかもペレットマウント工程を自動化しようとする場合
には、外気と遮断する機構を採用せねばならず、半田の
熱酸化防止がより一層困難となる欠点があった。Moreover, when attempting to automate the pellet mounting process, it is necessary to adopt a mechanism that isolates it from the outside air, which has the drawback of making it even more difficult to prevent thermal oxidation of the solder.
この発明は、上記欠点を解消する目的で提案するtので
、予め母材としての基板の固着面へ不活性かつ動粘性が
10〜10000 Ocst の絶縁油を塗布する工
程と、加熱された母材の固着面に半田を供給し溶融させ
る工程と、溶融半田上に被取付体を供給し半田付けする
工程とを含む半田付は方法を提供するものである。This invention is proposed for the purpose of eliminating the above-mentioned drawbacks, and therefore includes the step of applying an inert insulating oil having a kinematic viscosity of 10 to 10,000 ocst to the fixed surface of a substrate as a base material, and the step of applying an insulating oil having a kinematic viscosity of 10 to 10,000 ocst, and heating the base material. A soldering method is provided which includes the steps of supplying and melting solder to the fixing surface of the solder, and supplying and soldering an object to be attached onto the molten solder.
以下この発明の具体的一実施例を、図面を参照しつつ説
明する。A specific embodiment of the present invention will be described below with reference to the drawings.
第3図は、この発明の実施により得られた半導体装置の
ペレットマウント工程完了時のペレットマウント構体を
示し、8は放熱板兼用のステム基板、9はpb系半田層
、10は半田層9の表面からペレット11の上面にかけ
て絶縁被覆した不活性かつ動粘度が10〜I 0000
0 cstの絶縁油被覆層である。FIG. 3 shows the pellet mount structure of a semiconductor device obtained by carrying out the present invention upon completion of the pellet mounting process, in which 8 is a stem substrate that also serves as a heat sink, 9 is a PB solder layer, and 10 is a solder layer 9. Inert with an insulating coating from the surface to the upper surface of the pellet 11 and having a kinematic viscosity of 10 to I 0000
0 cst insulating oil coating layer.
この絶縁油被覆層10の具体的な材料としては、次の第
1表に示すような緒特性を有し分子式構造が、(CH3
)3SiO−Xn−8iCCHa)3(但しXは(CH
3)2 S iOでn=1 、2 、3 、・−・・・
・)で示される鎖状ジメチルポリシロキサン(例えば信
越シリコーン社製造の商品名信越シリコーンオイル・K
F96)と呼称するものがある。The specific material for this insulating oil coating layer 10 has the following characteristics as shown in Table 1, and has a molecular formula structure of (CH3
)3SiO-Xn-8iCCHa)3 (where X is (CH
3) 2SiO with n=1, 2, 3,...
) chain dimethylpolysiloxane (for example, Shin-Etsu Silicone Oil K manufactured by Shin-Etsu Silicone Co., Ltd.)
There is something called F96).
次に上記のペレットマウント構体の製造方法について説
明する。Next, a method for manufacturing the above pellet mount structure will be explained.
1ず最初に、第4図に示すようにステム基板8をヒータ
12上に導き、250〜350°C(高温状態)に加熱
する。1. First, as shown in FIG. 4, the stem substrate 8 is guided onto the heater 12 and heated to 250 to 350° C. (high temperature state).
つぎに絶縁油10′を所望量だけ、ステム基板8の半田
付固着面すに薄く塗布する。Next, a desired amount of insulating oil 10' is applied thinly to the soldering surface of the stem board 8.
そして、第5図に示すように所定量の半田片9′を絶縁
油10′上へ載置する。Then, as shown in FIG. 5, a predetermined amount of solder piece 9' is placed on the insulating oil 10'.
この際に半田片9′の比重は約11.3程度であるのに
対して、絶縁油10′の比重は第1表の如く0.760
〜0.980であり、しかも表面張力が小さいので、第
6図に示すとおりに、溶融半田9″の表面を絶縁油層1
0″が覆うことになる。At this time, the specific gravity of the solder piece 9' is approximately 11.3, while the specific gravity of the insulating oil 10' is 0.760 as shown in Table 1.
~0.980, and the surface tension is small, so as shown in FIG.
0'' will cover it.
そして第7図のように超音波振動ホーン13を、絶縁油
層10″および貯融半田9″1で接触させて、表面部を
押しのける。Then, as shown in FIG. 7, the ultrasonic vibration horn 13 is brought into contact with the insulating oil layer 10'' and the stored solder 9''1, and the surface portion is pushed away.
さらに第8図のように、コレット14に吸着しておいた
ペレット11を、溶融半田9″上に載置する。Furthermore, as shown in FIG. 8, the pellet 11 that has been adsorbed on the collet 14 is placed on the molten solder 9''.
この場合に、ペレット11の上面の方1で絶縁油層10
″が被さる。In this case, an insulating oil layer 10 is formed on the upper surface 1 of the pellet 11.
” is covered.
そしてこの時、絶縁油層10″は、溶融半田rの熱ニヨ
って(ヒータ12の温度にほぼ等しい)、加熱されるの
で、結果的に、先述の第3図に示された如く、半田層9
が形成されるとともに、半田層9表面からペレット11
の表面に亘って、絶縁油被覆層10が焼付は形成される
。At this time, the insulating oil layer 10'' is heated by the heat of the molten solder r (approximately equal to the temperature of the heater 12), so as a result, as shown in FIG. 9
are formed, and pellets 11 are formed from the surface of the solder layer 9.
An insulating oil coating layer 10 is formed over the surface.
尚この半導体装置の、その他の工程は、従来より公知の
作業方法手段により行うので、説明を癌略する。It should be noted that the other steps of this semiconductor device are carried out by conventionally known working methods, and therefore their explanations will be omitted.
上記半田付は方法においては、ペレットマウント時に加
熱溶融半田9″の表面は、絶縁油層10′が被さってい
るので熱酸化は防止され、その後ペレットマウント構体
化しても、半田層9表面からペレット11の表面に亘っ
て絶縁油被層10が覆っているので、外気により半田層
9が酸化されて脆くなることが防止される。In the soldering method described above, the surface of the heated and melted solder 9'' is covered with an insulating oil layer 10' during pellet mounting, so thermal oxidation is prevented. Since the insulating oil layer 10 covers the entire surface of the solder layer 9, the solder layer 9 is prevented from being oxidized by the outside air and becoming brittle.
また絶縁油10’は、表面張力が小さいので、加熱溶融
半田9″中に取り残されることがない上に、消泡性が強
く、ペレット載置作業中に、外気を巻き込んだり、半田
片9′中に含捷れていた吸蔵ガスが、発生しても直ちに
外部へ排出されてし1う。In addition, since the insulating oil 10' has a small surface tension, it will not be left behind in the heated and molten solder 9'', and has strong antifoaming properties, so it will not draw in outside air or cause the solder pieces 9' Even if the stored gas contained inside is generated, it is immediately discharged to the outside.
この発明によれば、次に述べる長所が期待できる。According to this invention, the following advantages can be expected.
■ 半田層は、被取付体を母材に固着作業中においては
熱酸化が、防止され、固着後においては、外気と遮断さ
れるので、外気による酸化が防止される。(2) The solder layer is prevented from thermal oxidation during the work of fixing the object to the base material, and after being fixed, it is isolated from the outside air, so oxidation by the outside air is prevented.
■ 半田層中に気泡やガス泡が残ることがないので、半
田層が経時的に劣化することがなくなり、半導体装置に
釦いては著しく寿命劣化が阻止される。(2) Since no air bubbles or gas bubbles remain in the solder layer, the solder layer does not deteriorate over time, and the life of a button on a semiconductor device is significantly prevented from deteriorating.
■ 渣た特に半導体装置においては、半田層が、絶縁油
被覆層にて保護されるので、外部よりの湿気侵入が起っ
ても、耐湿性が向上する。(2) Especially in semiconductor devices, the solder layer is protected by an insulating oil coating layer, so even if moisture intrudes from the outside, moisture resistance is improved.
■ さらに特に半導体装置においては、ペレット表面が
保護されることにもなるので、製造工程中でのPn接合
表面汚損が起らず、よって増幅作用をするトランジスタ
等のhFE特性も向上する。(2) Furthermore, especially in semiconductor devices, since the pellet surface is protected, the Pn junction surface is not contaminated during the manufacturing process, and the hFE characteristics of transistors and the like that perform an amplification function are also improved.
第1図は従来の半田付構体のマウント工程を示す半田載
置基板の断面図、第2図は従来の加熱炉の略断面図、第
3図はこの発明を実施した半田付構体の断面図、第4図
乃至第8図は本発明による製造方法を説明するための各
作業工程での半田載置、絶縁油塗布基板の断面図である
。
8・・・・・・基板(母材)、9・・・・・・半田層、
10・・・・・・絶縁油被覆層、10′−・・・・・絶
縁油、ト(被取付体)、b・・・・・・固着面。
11・・・・・・ペレツFig. 1 is a sectional view of a soldering board showing the mounting process of a conventional soldering structure, Fig. 2 is a schematic sectional view of a conventional heating furnace, and Fig. 3 is a sectional view of a soldering structure according to the present invention. , and FIGS. 4 to 8 are cross-sectional views of the solder-mounted and insulating oil-coated substrates in each work step for explaining the manufacturing method according to the present invention. 8...Substrate (base material), 9...Solder layer,
10...Insulating oil coating layer, 10'-...Insulating oil, g (mounted object), b...Fixing surface. 11...Peretz
Claims (1)
、予め母材の固着面へ不活性かつ動粘度が10〜100
000cstの絶縁油を塗布する工程と、加熱された母
材の固着面に半田を供給し溶融させる工程と、溶融半田
上に被取付体を供給し半田付けする工程とを含むことを
特徴とする二部材の半田付は方法。1. When soldering and fixing the object to be attached to the base material, first apply an inert material to the fixing surface of the base material with a kinematic viscosity of 10 to 100.
000 cst of insulating oil, a step of supplying solder to the fixed surface of the heated base material and melting it, and a step of supplying the object to be attached onto the molten solder and soldering it. Soldering two parts is a method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54010775A JPS5843182B2 (en) | 1979-01-31 | 1979-01-31 | How to solder two parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54010775A JPS5843182B2 (en) | 1979-01-31 | 1979-01-31 | How to solder two parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55103273A JPS55103273A (en) | 1980-08-07 |
| JPS5843182B2 true JPS5843182B2 (en) | 1983-09-26 |
Family
ID=11759696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54010775A Expired JPS5843182B2 (en) | 1979-01-31 | 1979-01-31 | How to solder two parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5843182B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6471306B2 (en) * | 2016-08-16 | 2019-02-20 | 株式会社弘輝 | Solder composition |
-
1979
- 1979-01-31 JP JP54010775A patent/JPS5843182B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55103273A (en) | 1980-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101728288B (en) | Direct Die Assembly Using Heated Bond Head | |
| US6265244B1 (en) | Method for mounting semiconductor elements | |
| JPH0992682A (en) | Soldering method, soldering device | |
| MY134318A (en) | Integrated circuit die having a copper contact and method therefor | |
| SE9803350D0 (en) | Soldering a semiconductor chip to a substrate | |
| JPH0342700B2 (en) | ||
| US5314842A (en) | Resin-sealed type semiconductor device and method for manufacturing the same | |
| KR850005137A (en) | Semiconductor device manufacturing method | |
| JPS5843182B2 (en) | How to solder two parts | |
| JPH07288255A (en) | Method of forming solder bumps | |
| JPS5843183B2 (en) | How to solder two parts | |
| JPH0222989Y2 (en) | ||
| JPS59202642A (en) | Manufacture of hybrid integrated circuit device | |
| JP2009010430A (en) | Mounting method of semiconductor element | |
| KR100384337B1 (en) | Conductive ball attaching method of circuit board for semiconductor package | |
| JPS61163644A (en) | Method and member material for sealing semiconductor device | |
| JP3691972B2 (en) | How to attach solder to pads | |
| JP2930112B1 (en) | Solder coating method for lead terminals of resin-encapsulated semiconductor device | |
| JPS58218146A (en) | Resin sealed semiconductor device | |
| JPH0483353A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS5512736A (en) | Semiconductor device manufacturing method | |
| JPS55110048A (en) | Pellet bonding method | |
| JPS598360A (en) | Fabrication of glass-sealed semiconductor device | |
| JPH0458539A (en) | Hybrid integrated circuit device | |
| JP2000260920A (en) | Cooling component mounting method, cooling component mounting device and module |