JPS5847082B2 - Microwave transistor amplifier - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an amplification device for microwave transistors.

Amplifiers such as transistors in the microwave band have conventionally been configured on a coaxial line or a strip line, and have not been directly provided inside an interface waveguide.

When incorporating such an amplifier into an interface waveguide, the conventional configuration described above converts the line once into a coaxial line or strip line, so a converter is required to convert between the waveguide and coaxial line. Met.

As a result, the structure is complicated and noise is generated due to conversion loss and signal disturbance.

However, mounting an amplifier directly on a waveguide has not been done because it is difficult to implement a bias circuit.

The present invention aims to provide a microwave transistor amplification device that uses a feedthrough capacitor so that the transistor can be mounted within an interface waveguide without causing the drawbacks of the conventional method.

The present invention will be described below with reference to embodiments and the drawings.

In the amplifier device of the present invention, as shown in FIGS.
is attached at an intermediate position of the interface waveguide 2 by grounding.

On the other hand, a pair of feedthrough capacitors 3 and 4 are attached by screwing their ground side terminals 31 and 41 into a pair of screw holes 30 and 40 provided in the tube wall of the interface waveguide 2 and grounding them. .

This pair of screw holes 30 and 40 are connected to the transistor 1.
The first electrode 11 is provided on the waveguide wall on the input end 20 side and the output end 200 side of the waveguide 2, respectively.

The pair of feedthrough capacitors 3 and 4 connect to the second terminal of the transistor 1 via their respective non-ground terminals 32 and 42.
and third electrode lead wires 13 and 14, respectively.

The second and third electrode lead wires 13 and 14 also serve as bias lines when a /9 ass voltage is applied to the transistor 1 from the bias terminals 5 and 6 of the feedthrough capacitors 3 and 4, respectively.

Note that the first electrode 11 represents an emitter electrode when the transistor 1 is a bipolar transistor,
In the case of a field effect transistor, the source electrode is shown.

Further, the lead wires 13 and 14 of the second and third electrodes indicate the lead wire of the base electrode and the lead wire of the collector electrode, respectively, when the transistor 1 is a bipolar transistor, and when the transistor 1 is a field effect transistor, A lead wire for the gate electrode and a lead wire for the drain electrode are shown, respectively.

Also, matching pieces 7, 7 . ... is for impedance matching.

When a microwave signal is input into the waveguide 2 from the input end 20 of the interface waveguide 20, this microwave signal excites the second electrode lead wire 13, is applied to the transistor 1, and is amplified. Ru.

The amplified microwave signal is converted into a waveguide mode by the third electrode lead wire 14 and output from the output end 200 of the waveguide 2 as an amplified microwave signal.

As described above, according to the present invention, since the transistor 1, which is a three-terminal element, is directly mounted within the interface waveguide 2 using a pair of feedthrough capacitors 3 and 4, it can be converted into a coaxial line or a strip line. The bias circuit is separated from the microwave signal by a feedthrough capacitor.

Therefore, there is an advantage that a bias voltage can be easily applied to the transistor 1.

Moreover, it is extremely easy to steal.

[Brief explanation of drawings]

FIG. 1 is a partial sectional view of an amplifier device according to an embodiment of the present invention.
FIG. 2 is a perspective view thereof. 1 is a transistor, 2 is an interface waveguide t, 3,
4 is a feedthrough capacitor, 5 and 6 are bias terminals, 11 is a first electrode, 13 is a second electrode lead wire, 14 is a third electrode lead wire, and 30.40 is a screw hole.

Claims (1)

[Claims] 1. A transistor installed in an interface waveguide with its first electrode grounded, and a transistor on the wall of the waveguide on the input end side and the output end side of the waveguide with respect to the transistor. A pair of feedthrough capacitors are inserted into the pair of holes respectively provided so that each ground side terminal is in contact with the inner wall of the hole, and each non-ground side terminal of the pair of feedthrough capacitors is connected to the transistor. An amplification device for a microwave transistor, characterized in that the second and third electrodes of the microwave transistor are connected to lead wires of the transistor. 2. The microwave device according to claim 1, wherein the transistor is a bipolar transistor, and the first electrode, the second electrode, and the third electrode are an emitter electrode, a base electrode, and a collector electrode, respectively. Transistor amplifier. 3. The microwave according to claim 1, wherein the transistor is a field effect transistor, and the first electrode, the second electrode, and the third electrode are a source electrode, a gate electrode, and a drain electrode, respectively. Amplifying device for transistors.