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JPS5847853B2 - density - Google Patents
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JPS5847853B2 - density - Google Patents

density

Info

Publication number
JPS5847853B2
JPS5847853B2 JP50130419A JP13041975A JPS5847853B2 JP S5847853 B2 JPS5847853 B2 JP S5847853B2 JP 50130419 A JP50130419 A JP 50130419A JP 13041975 A JP13041975 A JP 13041975A JP S5847853 B2 JPS5847853 B2 JP S5847853B2
Authority
JP
Japan
Prior art keywords
present
film
aluminum
conductor
corrosion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50130419A
Other languages
Japanese (ja)
Other versions
JPS5254964A (en
Inventor
雅信 華園
治 浅井
克 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50130419A priority Critical patent/JPS5847853B2/en
Publication of JPS5254964A publication Critical patent/JPS5254964A/en
Publication of JPS5847853B2 publication Critical patent/JPS5847853B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D

Landscapes

  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明はアルミニウム導体を使用した電子部品の防食方
法に係り、耐薬品性の保護膜例えばフォトレジストをマ
スクとして用い部分的に耐食性被膜を形成して電子部品
のアルミニウム導体に防食性を与える方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for preventing corrosion of electronic components using aluminum conductors, in which a chemical-resistant protective film, such as a photoresist, is used as a mask to partially form a corrosion-resistant film to protect the aluminum conductor of electronic components. This invention relates to a method of imparting corrosion protection to.

第1図は樹脂モールド集積回路の一例を示す。FIG. 1 shows an example of a resin molded integrated circuit.

第1図aはICチップを外部リード線にワイヤボンデイ
ングした状態を示す。
FIG. 1a shows a state in which the IC chip is wire-bonded to external lead wires.

第1図において、1は基板、2は半導体素子または混戒
集積回路素子等のチップ、3はアルミニウム導体、4は
リードワイヤー、5はリード導体である。
In FIG. 1, 1 is a substrate, 2 is a chip such as a semiconductor element or a mixed integrated circuit element, 3 is an aluminum conductor, 4 is a lead wire, and 5 is a lead conductor.

その縦断面図を第2図に、更に樹脂モールドした状態を
第3図に示す。
A longitudinal cross-sectional view of the same is shown in FIG. 2, and a resin-molded state is shown in FIG. 3.

7は樹脂モールドである。集積回路にはアルミニウム導
体を用いることが広く行なわれている。
7 is a resin mold. The use of aluminum conductors in integrated circuits is widespread.

このアルミニウム導体は露出状態では使用できないので
、リード導体とアルミニウム導体をリードワイヤーでボ
ンデイング接続した後樹脂モールドしている。
Since this aluminum conductor cannot be used in an exposed state, the lead conductor and aluminum conductor are connected by bonding with a lead wire and then resin molded.

しかし素子によってはリード導体と樹脂の間にクラツク
が発生し、湿気がIJ一ド導体→リードワイヤー→アル
ミニウム導体の順に伝わってアルミニウム導体を腐食す
る。
However, depending on the device, cracks may occur between the lead conductor and the resin, and moisture will be transmitted in the order of IJ lead conductor -> lead wire -> aluminum conductor, corroding the aluminum conductor.

これを防止するためにアルミニウム導体表面に防食被膜
を形成しておくことが必要である。
To prevent this, it is necessary to form an anticorrosion coating on the surface of the aluminum conductor.

一例として示すと、樹脂モールドのみの相合には相対湿
度90多、80℃で200時間以上経ると目標特性を示
すものの歩留りが相当少なくなる。
As an example, if only a resin mold is combined for 200 hours or more at a relative humidity of 90°C and 80°C, the yield will be considerably reduced although the desired properties will be exhibited.

本発明の目的は樹脂等によるパツケージング処理が不完
全な電子部品のアルミニウム導体や、パツケージングを
省略し、アルミニウム導体が露出した状態で使われる電
子部品のアルミニウム導体の耐食性を向上させる方法を
提供するにある。
The purpose of the present invention is to provide a method for improving the corrosion resistance of aluminum conductors of electronic components that have been incompletely packaged with resin or the like, and of electronic components that omit packaging and are used with the aluminum conductors exposed. There is something to do.

本発明の特徴とするところは、電子部品のアルミニウム
導体のボンデイング部分を除く表面に耐湿性保護被膜を
形或する方法において、アルミニウム導体のボンデイン
グ部分に耐薬品性の被膜を形成した後クロム酸、リン酸
、フッ素化合物を含む混合水溶液(以下、本発明の処理
液と記す)により処理することを特徴とする電子部品導
体の防食被膜形或方法にある。
The present invention is characterized in that, in a method for forming a moisture-resistant protective film on the surface of an aluminum conductor other than the bonding part of an electronic component, after forming a chemical-resistant film on the bonding part of the aluminum conductor, chromic acid, A method for forming an anti-corrosion coating on an electronic component conductor, which is characterized in that it is treated with a mixed aqueous solution containing phosphoric acid and a fluorine compound (hereinafter referred to as the treatment liquid of the present invention).

本発明を適用できる電子部品は抵抗、蓄電器、その他の
受動素子、薄膜集積回路、モノリシツク集積回路、混成
集積回路等の能動素子等で、電極がアルミニウムからな
るもの、または電極から引き出されたリード導体がアリ
ミニウム導体に接続されているもの、あるいは外部へ導
出するリード導体がアルミニウムである素子である。
Electronic components to which the present invention can be applied include resistors, capacitors, other passive elements, active elements such as thin film integrated circuits, monolithic integrated circuits, and hybrid integrated circuits, etc., with electrodes made of aluminum, or lead conductors drawn out from the electrodes. is connected to an aluminum conductor, or the lead conductor leading to the outside is made of aluminum.

上記のような素子の少なくともリードワイヤーと接続さ
れるアルミニウム導体までにクロム酸、リン酸、フッ素
化合物を含む混合水溶液で処理し被膜を形成する(以下
この被膜を本発明の被膜と記す)。
At least up to the aluminum conductor connected to the lead wire of the above element is treated with a mixed aqueous solution containing chromic acid, phosphoric acid, and a fluorine compound to form a coating (hereinafter, this coating will be referred to as the coating of the present invention).

望ましくはボンデイング部分を除くアルミニウムの総て
に本発明の被膜を形成する。
Preferably, the coating of the present invention is formed on all of the aluminum except the bonding portion.

この時に本発明の被膜がアルミニウムの全面に形威され
るから、ボンデイング部分露出させる必要がある。
At this time, since the coating of the present invention is applied to the entire surface of the aluminum, it is necessary to expose the bonding portion.

アルミニウムの一部を露出させる手段として本発明では
本発明の処理液に耐える被膜を用いる。
In the present invention, a coating resistant to the treatment solution of the present invention is used as a means for exposing a portion of the aluminum.

その一例としてフォトレジスト膜がある。One example is a photoresist film.

また耐薬品性の金属膜をマスク蒸着で形或してもよく、
その場合の金属は本発明の処理液に耐えるのみでよい。
Alternatively, a chemical-resistant metal film may be formed by mask vapor deposition.
In that case, the metal only needs to be resistant to the treatment solution of the present invention.

そのような金属は例えばN i C rAu,Cr−C
u等の合金膜あるいは積層膜、Fe,Cr,Ti,Ta
等の膜である。
Such metals include, for example, NiCrAu, Cr-C
Alloy film or laminated film such as u, Fe, Cr, Ti, Ta
etc. membrane.

この金属の場合にはその表面上に本発明の被膜が形或さ
れないので、その表面に更にはんだとの濡れ性の良い金
属膜をマスク蒸着すればボンデイングできる。
In the case of this metal, since the film of the present invention is not formed on the surface thereof, bonding can be performed by further mask-depositing a metal film having good wettability with solder on the surface.

本発明の処理液は膜が平滑で緻密に形戒される方法がよ
く。
The treatment solution of the present invention is preferably used to form a smooth and dense film.

電子部品に使用する場合には表面蓄積電荷密度を少なく
したり、チャンネルの形成を防止するために、非アルカ
リ性の混合液を用いることが好ましい。
When used in electronic components, it is preferable to use a non-alkaline liquid mixture in order to reduce the surface charge density and prevent the formation of channels.

本発明によれば本発明の被膜がアルミニウム上に形成さ
れるので、アルミニウム導体の耐食性を向上することが
できる。
According to the present invention, since the coating of the present invention is formed on aluminum, the corrosion resistance of the aluminum conductor can be improved.

またボンデイング部分を除いて形成することができるか
ら、リードワイヤーや導線の接続に支障がなくなる。
Furthermore, since the bonding portion can be removed, there is no problem in connecting lead wires or conducting wires.

以下実施例を示す。Examples are shown below.

実施例 1 ホトレジストパターンによる選択的本発明の耐食性被膜
形成のための処理を実施するのに先だって、本発明の処
理液の組戒についてまず調べた。
Example 1 Prior to carrying out the process for selectively forming the corrosion-resistant film of the present invention using a photoresist pattern, the composition of the treatment solution of the present invention was first investigated.

F/Cro3=0.1 0とし、燐酸量をかえた場合の
結果を第4図に示す。
FIG. 4 shows the results when F/Cro3=0.10 and the amount of phosphoric acid was varied.

処理温度は27゜Cである。ここで、○印は干渉色を呈
する被膜が生成したことを示し、×印は緑色の粉末状の
結晶が生戒したことを示す。
The processing temperature is 27°C. Here, the mark ◯ indicates that a film exhibiting an interference color was formed, and the mark x indicates that green powdery crystals were removed.

この結果から、燐酸量は、本発明の被膜の生成にはあま
り影響されないこと、およびクロム酸量は3〜8gがよ
いことがわかるとともに、最少燐酸量は109/l、最
大燐酸量は3 0 0 g/13であることがわかった
These results show that the amount of phosphoric acid is not significantly affected by the formation of the film of the present invention, and that the amount of chromic acid is preferably 3 to 8 g.The minimum amount of phosphoric acid is 109/l, and the maximum amount of phosphoric acid is 30 g. It was found to be 0 g/13.

そこで、燐酸量を10〜300g/lとし、クロム酸量
を6gとし、F/Cro3の値を0.03〜0.60ま
で変化させた20〜50℃の液に1〜5分間処理し、本
発明の被膜の生成状態を調べた。
Therefore, the amount of phosphoric acid was set to 10 to 300 g/l, the amount of chromic acid was set to 6 g, and the solution was treated for 1 to 5 minutes at 20 to 50 °C with the F/Cro3 value varied from 0.03 to 0.60. The formation state of the film of the present invention was investigated.

得られた結果は第5図に示すものであり、○印は光沢の
ある被膜が生成した液組成を示し、×印は緑色の粉末の
生成したことを示す。
The obtained results are shown in FIG. 5, where the ◯ mark indicates the liquid composition that produced a glossy film, and the x mark indicates that a green powder was produced.

ついで、これらの試料について、80℃、90饅R,H
(相対湿度)の条件下に1 000時間放置した後の試
料の状態を調べたところ、第5図の斜線で示す部分の試
料はこの条件下では腐食しないことを確認した。
Next, these samples were heated at 80°C and 90°C.
When the state of the sample was examined after being left for 1,000 hours under (relative humidity) conditions, it was confirmed that the sample in the shaded area in FIG. 5 did not corrode under these conditions.

したがって、この斜線の範囲の液組成であれば本発明の
処理液による処理に使用できることが明らかになった。
Therefore, it has become clear that liquid compositions within the shaded range can be used for treatment with the treatment liquid of the present invention.

そこで、第6図に示すように、ボンデイングしようとす
る部分にあらかじめフォトレジストパターンを形或して
おき、それ以外の部分のみを局部的に本発明の処理液に
よる処理することが可能であるかどうかについて検討し
た。
Therefore, as shown in FIG. 6, is it possible to form a photoresist pattern in advance on the part to be bonded and then locally treat only the other parts with the treatment solution of the present invention? I considered whether.

第6図中11は基板、12はアルミニウム導体、13は
フォトレジストである。
In FIG. 6, 11 is a substrate, 12 is an aluminum conductor, and 13 is a photoresist.

その結果、50〜200℃の範囲で熱処理したフォトレ
ジストパターンをマスクにしておけば、その下に本発明
の処理液がしみ込むことはなく、それ以外の部分だけを
選択的に本発明の処理液により処理できることが明らか
になった。
As a result, if a photoresist pattern heat-treated in the range of 50 to 200°C is used as a mask, the processing solution of the present invention will not penetrate under it, and the processing solution of the present invention will selectively cover only the other parts. It has become clear that it can be processed by

そこで、このような部分的に本発明の処理液により処理
した未処理の導体接続部分に、50μφの銅、金および
アルミニウムの細線を超音波ボンデイングしたところ、
これらの細線を問題なく接続できることを確認した。
Therefore, when we ultrasonically bonded 50 μΦ thin wires of copper, gold, and aluminum to such untreated conductor connection parts that had been partially treated with the treatment solution of the present invention,
We confirmed that these thin wires could be connected without any problems.

また、超音波ボンデイングの代りに、ボンデイングバッ
ト部分(接続部分)にアルミニウムの蒸着パターンを形
成する方法も利用できることがわかった。
It has also been found that instead of ultrasonic bonding, a method of forming an aluminum vapor deposition pattern on the bonding butt portion (connection portion) can also be used.

ついで、これらの試料について接続部分の抵抗値を測定
したところ、いずれの試料も50mβ以下の抵抗であり
、抵抗値の点からも異常なく使用できることを確認でき
た。
Next, when the resistance values of the connected portions of these samples were measured, it was confirmed that all the samples had a resistance of 50 mβ or less, and could be used without any abnormality in terms of resistance values.

尚、前述の実施例では、ボンデイングバット部分のアル
ミニウムだけはこれまで用いてきたような手法で保護被
膜を形成して防食する必要がある。
In the above-mentioned embodiment, it is necessary to form a protective coating on only the aluminum of the bonding butt portion by the method used so far to prevent corrosion.

しかし、第7図aに示すように基板21上に形成したア
ルミニウム導体22の表面にフォトレジスト23を形成
し、bのようにフォトレジスト23以外のアルミニウム
導体22表面上に本発明の被膜24を形成した後Cのよ
うにフォトレジスト23を除き、dのように金、白金等
の耐食性被膜25を形戒し、次にeのようにワイヤーリ
ード26を形成する方法を用いると、リード線を伝わっ
てくる水分に対してボンデイングパッド部分のAlの腐
食を防止するのに有効である。
However, as shown in FIG. 7a, a photoresist 23 is formed on the surface of the aluminum conductor 22 formed on the substrate 21, and as shown in FIG. After forming, remove the photoresist 23 as shown in C, apply a corrosion-resistant coating 25 of gold, platinum, etc. as shown in d, and then form the wire lead 26 as shown in e. This is effective in preventing corrosion of Al in the bonding pad portion due to transmitted moisture.

なお、AA上にAuを直接接続すると、AuとAlとが
合金化して劣化するので、このような場合にはAl−C
r−Au ,Al−NiCr−Auのように合金化を防
ぐ膜を介在させるという一般的手法を利用するのが有効
である。
Note that if Au is directly connected to AA, Au and Al will alloy and deteriorate, so in such a case, Al-C
It is effective to use a general method of interposing a film that prevents alloying, such as r-Au or Al-NiCr-Au.

また、図には示さないが、本発明の処理液により処理し
た後で、通常のICやLSI等の形戒のように、CVD
やスパッタリング法でSio2等の絶縁性保護膜を全面
に形成し、ついでボンデイングパツド部分だけの絶縁膜
をエッチングして除き、前述のような耐食性のある金属
でアルミニウムをおおって素子の信頼性を向上させる方
法も有効である。
Although not shown in the figure, after being treated with the treatment liquid of the present invention, CVD
An insulating protective film such as Sio2 is formed on the entire surface using a sputtering method, and then the insulating film only on the bonding pad is removed by etching, and the aluminum is covered with a corrosion-resistant metal as mentioned above to improve the reliability of the device. Methods to improve this are also effective.

尚、本発明の被膜ははんだに対して濡れ性が悪いが、こ
れを逆用してはんだレジストとして用いることができる
Incidentally, although the film of the present invention has poor wettability with respect to solder, this can be reversely used as a solder resist.

従来はんだレジストとしては、二酸化珪素被膜等が用い
られてきたが、これはスパッタリング等で形成する際に
被処理基板の温度が300℃程度に向上し、かつ長時間
晒され、またエッチング等の処理を受けるので導体の剥
離や、導体部分の抵抗増加等をまねく。
Conventionally, silicon dioxide films have been used as solder resists, but when formed by sputtering etc., the temperature of the substrate to be processed rises to about 300°C, is exposed for a long time, and is subject to treatments such as etching. This can cause the conductor to peel off or increase the resistance of the conductor.

これに対して本発明の被膜は常温で形成させることがで
き、フォトレジストで部分的に覆って本発明の処理液に
より処理した場合には低温でフォトレジスト膜を除去で
きるので、半導体素子チップや導体が劣化せず、また金
属をクロメート処理のレジストとして使用した場合には
金属がボンデイングパツドとなる。
On the other hand, the film of the present invention can be formed at room temperature, and if it is partially covered with photoresist and treated with the treatment solution of the present invention, the photoresist film can be removed at a low temperature. The conductor does not deteriorate, and when the metal is used as a resist for chromate treatment, the metal becomes a bonding pad.

以上のようにアルミニウム導体を部分的にはんだ付けし
ようとする場合に素子や導体を劣化させることなくはん
だレジスト膜を形戒しうる。
As described above, when attempting to partially solder an aluminum conductor, the solder resist film can be removed without deteriorating the element or conductor.

しかも二酸化珪素被膜をはんだレジストとするときは平
面にしか形成できないが、本発明処理液により処理の場
合には浸漬処理なので全面に形成させうるから、端子の
ような部分のはんだレジストとして好適である。
Moreover, when a silicon dioxide film is used as a solder resist, it can only be formed on a flat surface, but when it is treated with the treatment solution of the present invention, it can be formed on the entire surface because it is a dipping process, so it is suitable as a solder resist for parts such as terminals. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、ICの接続部を示す平面および断面図、第2
図は第1図の縦断面図、第3図は第2図に樹脂モールド
を施こした状態の縦断面図、第4図は、本発明の処理液
組成の混合割合を示す図、第5図は、本発明の処理液組
成の混合割合を示す図、第6図は、本発明を実施する方
法を示す平面図、第7図は、本発明の変形、応用例を示
す断面図。 符号の説明、21・・・・・・基板、22・・・・・・
アルミニウム導体、23・・・・・・フォトレジスト、
24・・・・・・クロム酸、リン酸、フッ素化合物を含
む混合水溶液で処理され形成された被膜、25・・・・
・・耐食性金属被膜、27・・・・・・リードワイヤー
Figure 1 is a plan view and cross-sectional view showing the connection part of the IC, Figure 2 is a
The figure is a longitudinal sectional view of Fig. 1, Fig. 3 is a longitudinal sectional view of the resin molded state of Fig. 2, Fig. 4 is a diagram showing the mixing ratio of the treatment liquid composition of the present invention, and Fig. 5 is a longitudinal sectional view of Fig. 6 is a plan view showing a method of carrying out the present invention, and FIG. 7 is a sectional view showing a modification and application example of the present invention. Explanation of symbols, 21... Board, 22...
Aluminum conductor, 23...photoresist,
24... Coating formed by treatment with a mixed aqueous solution containing chromic acid, phosphoric acid, and fluorine compound, 25...
...Corrosion-resistant metal coating, 27...Lead wire.

Claims (1)

【特許請求の範囲】 1 電子部品のアルミニウム導体表面にボンデイング部
分を除いて耐食性保護被膜を形成する方法において、ボ
ンデイング部分に耐薬品性の被膜を形成した後、クロム
酸、リン酸、フッ素イビ合物を含む混合水溶液で処理す
ることを特徴とする電子部品導体の防食方法。 2 特許請求の範囲第1項記載の方法において、耐薬品
性の被膜が上記クロム酸、リン酸、フッ素化合物を含む
混合水溶液で処理されない金属であることを特徴とする
電子部品導体の防食方法。
[Claims] 1. In a method of forming a corrosion-resistant protective film on the surface of an aluminum conductor of an electronic component except for a bonding part, after forming a chemical-resistant film on the bonding part, chromic acid, phosphoric acid, fluorine-containing compound, etc. 1. A method for preventing corrosion of electronic component conductors, characterized by treating with a mixed aqueous solution containing a substance. 2. A method for preventing corrosion of an electronic component conductor according to claim 1, wherein the chemical-resistant coating is a metal that is not treated with the mixed aqueous solution containing the chromic acid, phosphoric acid, and fluorine compound.
JP50130419A 1975-10-31 1975-10-31 density Expired JPS5847853B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50130419A JPS5847853B2 (en) 1975-10-31 1975-10-31 density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50130419A JPS5847853B2 (en) 1975-10-31 1975-10-31 density

Publications (2)

Publication Number Publication Date
JPS5254964A JPS5254964A (en) 1977-05-04
JPS5847853B2 true JPS5847853B2 (en) 1983-10-25

Family

ID=15033792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50130419A Expired JPS5847853B2 (en) 1975-10-31 1975-10-31 density

Country Status (1)

Country Link
JP (1) JPS5847853B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50108563A (en) * 1974-02-01 1975-08-27

Also Published As

Publication number Publication date
JPS5254964A (en) 1977-05-04

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