JPS5853490B2 - Magnetic semiconductor and its manufacturing method - Google Patents
Magnetic semiconductor and its manufacturing methodInfo
- Publication number
- JPS5853490B2 JPS5853490B2 JP51069061A JP6906176A JPS5853490B2 JP S5853490 B2 JPS5853490 B2 JP S5853490B2 JP 51069061 A JP51069061 A JP 51069061A JP 6906176 A JP6906176 A JP 6906176A JP S5853490 B2 JPS5853490 B2 JP S5853490B2
- Authority
- JP
- Japan
- Prior art keywords
- iron
- magnesium
- zinc
- magnetic semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 21
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- -1 sulfur cations Chemical class 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 230000005415 magnetization Effects 0.000 description 7
- 150000001768 cations Chemical class 0.000 description 6
- BDSDWGANMORQCH-UHFFFAOYSA-N [Fe].[Mg].[Zn] Chemical compound [Fe].[Mg].[Zn] BDSDWGANMORQCH-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910001308 Zinc ferrite Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- WGEATSXPYVGFCC-UHFFFAOYSA-N zinc ferrite Chemical compound O=[Zn].O=[Fe]O[Fe]=O WGEATSXPYVGFCC-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UCPIPQZQXIKSGB-UHFFFAOYSA-N [Fe].[Mg].[Fe] Chemical compound [Fe].[Mg].[Fe] UCPIPQZQXIKSGB-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/402—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of II-VI type, e.g. Zn1-x Crx Se
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Hard Magnetic Materials (AREA)
- Emergency Protection Circuit Devices (AREA)
- Conductive Materials (AREA)
- Compounds Of Iron (AREA)
- Magnetic Ceramics (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
【発明の詳細な説明】
本発明は磁性半導体、特に硫黄陽イオンを含み、亜鉛、
鉄およびマグネシウムを主成分とする化合物磁性半導体
、およびその製造方法にかかり、磁化が大きく、抵抗率
の小さい磁性半導体、およびそれを容易に製造すること
のできる方法を提供しようとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides magnetic semiconductors, particularly those containing sulfur cations, zinc,
The present invention relates to a compound magnetic semiconductor containing iron and magnesium as main components and a method for manufacturing the same, and aims to provide a magnetic semiconductor with high magnetization and low resistivity, and a method for easily manufacturing the same.
従来、フェライト系磁器においては、磁化が大きいため
、種々の応用が考えられて来ている。Conventionally, ferrite-based porcelain has a large magnetization, so various applications have been considered.
しかしながら、その抵抗率が大きく、はとんどのものは
、磁性半導体としての用途に適さないものであった。However, their resistivity is high and most of them are not suitable for use as magnetic semiconductors.
本発明にかかる磁性半導体は、硫黄陽イオンを含む亜鉛
−マグネシウム−鉄系化合物であり、抵抗率のきわめて
小さいものである。The magnetic semiconductor according to the present invention is a zinc-magnesium-iron compound containing sulfur cations and has extremely low resistivity.
一般に、亜鉛フェライトは、鉄イオンによる磁気モーメ
ントが、互いに逆向きの磁化を生じ、全体として、室温
以上の温度では、磁化のあられれないものである。Generally, in zinc ferrite, the magnetic moments caused by iron ions cause magnetization in opposite directions, and as a whole, there is no magnetization at temperatures above room temperature.
この亜鉛フェライトに、原子価の大きい陽イオンを含ま
せると、その陽イオンの大きな原子価のたの、原子価補
償を起こし、３価の鉄イオンが、２価の鉄イオンに変換
される。When this zinc ferrite contains a cation with a high valence, valence compensation occurs due to the high valence of the cation, and trivalent iron ions are converted to divalent iron ions.
その結果、磁気的配列の変化が起こり、全体的に大きな
磁化が現われる。As a result, a change in magnetic alignment occurs and a large overall magnetization appears.
また、この原子価補償のため、フェライト格子内に、空
孔などの欠陥を生じる。Further, due to this valence compensation, defects such as vacancies are generated in the ferrite lattice.
この格子欠陥によって導電性がいちぢるしく作用され、
これまでのフェライト材料では得られないような、大き
な導電率を得ることができる。This lattice defect significantly affects conductivity,
It is possible to obtain high electrical conductivity that cannot be obtained with conventional ferrite materials.
これは、本発明のような亜鉛−マグネシウム−鉄系化合
物磁性体についてもいえる。This also applies to zinc-magnesium-iron compound magnetic materials such as the present invention.
発明者らは、このような考察にもとづいて、原子価の大
きな陽イオンについて実験し検討した結果、通常では陽
イオンの得がたいハロゲン元素を除き、公害のない元素
のうち、硫黄がもつとも適したものであることを確認し
た。Based on these considerations, the inventors conducted experiments and considered cations with large valences, and found that sulfur is the most suitable element among non-polluting elements, excluding halogen elements, which are normally difficult to obtain cations from. It was confirmed that
次に、本発明の詳細について、実施例にもとづいて説明
する。Next, details of the present invention will be explained based on examples.
まず、酸化亜鉛と酸化鉄、酸化マグネシウムを、亜鉛と
鉄、マグネシウムの３成分の合計量に対して、それぞれ
が５〜３０原子％、６５〜９０原子％、５〜３０原子％
の組成比率になるよう、配合してから、よく混合した。First, zinc oxide, iron oxide, and magnesium oxide are added in amounts of 5 to 30 at%, 65 to 90 at%, and 5 to 30 at%, respectively, based on the total amount of the three components of zinc, iron, and magnesium.
After blending to obtain a composition ratio of , the mixture was thoroughly mixed.
この混合は、湿式でもあるいは乾式でもよい。This mixing may be wet or dry.
混合物をよく乾燥させてから、適当な形状、大きさに成
型した。After thoroughly drying the mixture, it was molded into a suitable shape and size.
この成型品を、カーボンあるいは石英などのるつぼ、あ
るろはボートに入れ、雰囲気炉に装填し、窒素など、を
キャリアガスとして、二硫化炭素蒸気を送りこみ、６０
０−１０００℃の範囲内の温度で１〜ｉｏ時間、熱処理
した。This molded product was placed in a crucible made of carbon or quartz, or an Arroha boat, and loaded into an atmosphere furnace, and carbon disulfide vapor was fed into it using nitrogen or other gas as a carrier gas.
Heat treatment was performed at a temperature within the range of 0-1000°C for 1-io hours.
得られた磁器を、Ｘ線解析、熱解析、化学分析などで解
析した結果、硫黄が陽イオンとして格子中に存在する、
亜鉄−マグネシウムー鉄系化合物であることが解認され
た。As a result of analyzing the obtained porcelain by X-ray analysis, thermal analysis, chemical analysis, etc., it was found that sulfur exists as a cation in the lattice.
It was confirmed that it was an iron-magnesium-iron compound.
これは、混合粉末を二硫化炭素雰囲気中で焼成した際に
、反応焼成を生じ、硫黄が化合物格子中に陽イオンとし
てドープ＊ホされたためと考えられる。This is thought to be because reaction firing occurred when the mixed powder was fired in a carbon disulfide atmosphere, and sulfur was doped into the compound lattice as a cation.
そして、反応と同時に焼成が行なわれるため、６００℃
付近の温度においても焼成される。Since calcination is carried out at the same time as the reaction, the temperature is 600°C.
It can also be fired at similar temperatures.
これは、通常のフェライトの焼成温度よりもかなり低い
温度である。This temperature is considerably lower than the firing temperature of normal ferrite.
このようにして得られた亜鉛−マグネシウム−鉄系化合
物は、その組成により、室温における磁化の値が約５０
ｅｍｕ／ｇという大きな値を示す。The zinc-magnesium-iron compound thus obtained has a magnetization value of about 50 at room temperature, depending on its composition.
It shows a large value of emu/g.
また、四端子法で測定した抵抗率はＬ ＯｍΩ傭程度と
いうきわめて小さな値であり、その上、活性化エネルギ
ーが０．００６ｅＶ程度というきわめて小さい値である
。Further, the resistivity measured by the four-terminal method is an extremely small value of about L OmΩ, and furthermore, the activation energy is an extremely small value of about 0.006 eV.
このため、抵抗値の温度変化は小さい。Therefore, the temperature change in resistance value is small.
さらに、キュリ一温度は５００℃以上であり、安定な磁
性半導体として使用することができる。Furthermore, the Curie temperature is 500° C. or higher, and it can be used as a stable magnetic semiconductor.
この磁性体半導体は、電流制御用素子などに使用するこ
とができる。This magnetic semiconductor can be used for current control elements and the like.
下表に、代表的な特性を示す。The table below shows typical characteristics.
いずれも、室温における値である。All values are at room temperature.
上述の実施例では、粉末を成型してから焼成し、磁器と
しているけれども、成型せずに、混合粉末のまま熱処理
して反応させても、硫黄の陽イオンを含む亜鉛−マグネ
シウム−鉄系化合物の粉末を得ることができる。In the above example, the powder is molded and then fired to make porcelain, but even if the mixed powder is heat treated and reacted without being molded, the zinc-magnesium-iron compound containing sulfur cations will not be produced. powder can be obtained.
粉末材料は、カーボン、樹脂まｆ：ｉ−Ｍう匁ｚに適当
な割合で分散または混合することにより、種々の形態の
製品を作ることができる。By dispersing or mixing the powdered material in carbon, resin, or resin at an appropriate ratio, products in various forms can be made.
以上のように、本発明にかかる磁性半導体は、大きな磁
化を示すだけでなく、きわめて小さな抵抗率をもち、か
つその温度変化も小さく、安定な化合物である。As described above, the magnetic semiconductor according to the present invention is a stable compound that not only exhibits large magnetization but also has extremely low resistivity and small temperature change.
この化合物は、Ｘ線解析によれば、スピネル相を示す。This compound exhibits a spinel phase according to X-ray analysis.
そして、この化合物は、低い温度で簡単にかつ安全に製
造することができるものであり、さらにその製造工程に
おける公害防止対策もきわめて容易に施せるものである
。This compound can be easily and safely produced at low temperatures, and furthermore, it is extremely easy to take measures to prevent pollution during the production process.
さらに、亜鉛−マグネシウム−鉄系化合物の、亜鉛、鉄
またはマグネシウムの一部を、コバルト、ニッケル、マ
ンガン、カドミウム、リチウム、クロム、銅、バナジウ
ム、チタン、あるいはカルシウムなどの１種以上で置換
してもよく、特性の優れた材料を得ることができる。Furthermore, part of the zinc, iron or magnesium in the zinc-magnesium-iron compound may be replaced with one or more of cobalt, nickel, manganese, cadmium, lithium, chromium, copper, vanadium, titanium, or calcium. It is possible to obtain materials with excellent properties.
また、原料としては、亜鉄、マグネシウム、鉄の酸化物
に限られず、炭酸化合物、硫化物、あるいは硫酸化合物
などを適宜選択して使用すればよい。Further, the raw materials are not limited to oxides of iron, magnesium, and iron, and carbonate compounds, sulfides, sulfuric compounds, and the like may be appropriately selected and used.
さらに、使用目的に応じて、この材料に他の成分を添加
含有させることもよい方法である。Furthermore, depending on the purpose of use, it is also a good method to add other components to this material.
Claims (1)
ムを主成分とすることを特徴とする磁性半導体。 ２ 亜鉛、鉄、マグネシウムの化合物を混合し、この原
料を二硫化炭素中で加熱して反応させることを特徴とす
る磁性半導体の製造方法。 ３ 特許請求の範囲第２項の記載において、前記原料は
亜鉛、鉄およびマグネシウムの３成分が、その合計量に
対して、亜鉛が５〜３０原子％、鉄が６５〜９０原子％
、およびマグネシウムが５〜３０原子％となるよう配合
されていることを特徴とする磁性半導体の製造方法。 ４ 特許請求の範囲第２項または第３項の記載において
、二硫化炭素中での熱処理温度を６００〜１０００℃と
することを特徴とする磁性半導体の製造方法。[Claims] 1. A magnetic semiconductor characterized by containing sulfur cations and having zinc, iron, and magnesium as main components. 2. A method for producing a magnetic semiconductor, which comprises mixing compounds of zinc, iron, and magnesium, and heating and reacting the raw materials in carbon disulfide. 3. In the description of claim 2, the raw material contains three components of zinc, iron, and magnesium, and based on the total amount, zinc is 5 to 30 atomic % and iron is 65 to 90 atomic %.
, and magnesium in an amount of 5 to 30 atomic %. 4. A method for manufacturing a magnetic semiconductor according to claim 2 or 3, characterized in that the heat treatment temperature in carbon disulfide is 600 to 1000°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51069061A JPS5853490B2 (en) | 1976-06-11 | 1976-06-11 | Magnetic semiconductor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51069061A JPS5853490B2 (en) | 1976-06-11 | 1976-06-11 | Magnetic semiconductor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52151897A JPS52151897A (en) | 1977-12-16 |
| JPS5853490B2 true JPS5853490B2 (en) | 1983-11-29 |
Family
ID=13391665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51069061A Expired JPS5853490B2 (en) | 1976-06-11 | 1976-06-11 | Magnetic semiconductor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5853490B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376404A (en) * | 1986-09-19 | 1988-04-06 | Atsushi Ogura | Magnetic semiconductor globular fine particle and manufacture thereof |
| JP4647654B2 (en) * | 2005-03-18 | 2011-03-09 | 独立行政法人科学技術振興機構 | Magnetic semiconductor materials |
-
1976
- 1976-06-11 JP JP51069061A patent/JPS5853490B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52151897A (en) | 1977-12-16 |
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