JPS5856006B2 - Continuous smelting furnace with a reaction chamber dedicated to desiliconization - Google Patents
Continuous smelting furnace with a reaction chamber dedicated to desiliconizationInfo
- Publication number
- JPS5856006B2 JPS5856006B2 JP4666676A JP4666676A JPS5856006B2 JP S5856006 B2 JPS5856006 B2 JP S5856006B2 JP 4666676 A JP4666676 A JP 4666676A JP 4666676 A JP4666676 A JP 4666676A JP S5856006 B2 JPS5856006 B2 JP S5856006B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- removal
- reaction chamber
- refining
- slag
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Treatment Of Steel In Its Molten State (AREA)
- Refinement Of Pig-Iron, Manufacture Of Cast Iron, And Steel Manufacture Other Than In Revolving Furnaces (AREA)
Description
【発明の詳細な説明】
本発明は溶融金属を連続的に精錬する際に、より効率的
に精錬を行なわせるための設備に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to equipment for more efficiently refining molten metal when refining it continuously.
ここで示す溶融金属とは溶融鉄、溶融銑鉄、溶融鉄合金
(たとえば鉄マンガン合金など)などを示し、また精錬
とは溶融金属に含まれるケイ素、リン、イオウ(以後S
i、P、Sとして示す。The molten metals here refer to molten iron, molten pig iron, molten iron alloys (for example, iron-manganese alloys, etc.), and smelting refers to silicon, phosphorus, and sulfur (hereinafter referred to as S) contained in the molten metals.
Denoted as i, P, S.
)の除去を目的とした反応を行なわせることを指すが、
この際に共存するマンガン、鉄(以後Mn、Feとして
示す。) refers to the reaction aimed at removing
At this time, manganese and iron (hereinafter referred to as Mn and Fe) coexist.
)などがスラグに移行するのは避けられない。) etc. will inevitably transition to slag.
また連続的とは精錬用容器に溶融金属を中断しないよう
に供給し、かつ取出すことを前提とした操作を指す。Continuously refers to an operation that assumes that molten metal is supplied to and taken out of the refining vessel without interruption.
溶融金属の1種である溶銑を例として以後の説明を行な
う。The following explanation will be given using hot metal, which is a type of molten metal, as an example.
溶銑を主原料とする酸素製鋼法においては、純酸素(以
後02とする。In the oxygen steelmaking method, which uses hot metal as the main raw material, pure oxygen (hereinafter referred to as 02) is used.
)を吹付けもしくは吹込みにより。) by spraying or blowing.
Si十02→S i02 の反応で溶銑の脱Siを行なう。Si 102→S i02 The reaction removes Si from the hot metal.
脱P、脱Sを行なうための副材料(スラグの原材)とし
て装入される生石灰(Cab)を溶解、スラグ化し、さ
らに02tこよりスラグ共存下で浴を酸化し脱P脱Sを
行ないながら昇温をはかるのが一般的な作業である。Quicklime (Cab) charged as an auxiliary material (raw material for slag) for deP and S removal is melted and turned into slag, and then the bath is oxidized in the coexistence of slag from 02t to perform deP and S removal. A common task is to measure the temperature.
このように溶融金属中のSiは副材料の滓化を行なうう
えで必須な成分であるが、一方酸化により生成されるS
iO2は酸性成分とされており、精錬反応には望ましく
ない成分である。In this way, Si in molten metal is an essential component for slag formation of sub-materials, but on the other hand, Si produced by oxidation
iO2 is considered to be an acidic component and is an undesirable component for refining reactions.
副材料として生石灰を用いるのは、塩基性酸化物でこれ
らの酸性酸化物を中和しざらにスラグを塩基性にし精錬
反応を行なうのが目的であり、その比率を表わすのに塩
基度(CaO) / (S i02 )が一般に用いら
れている。The purpose of using quicklime as an auxiliary material is to neutralize these acidic oxides with basic oxides and make the slag basic for the refining reaction. ) / (S i02 ) is commonly used.
酸素製鋼法の吹止時スラグでは前記塩基度は3〜4が目
標とされており、また溶銑段階での脱P処理を目的とし
た予備膜Pでは1〜2が目標となっている。The basicity is targeted to be 3 to 4 for the blow-off slag used in the oxygen steelmaking process, and 1 to 2 for the preliminary film P intended for deP treatment at the hot metal stage.
また、一方Siの共存する浴の脱Pを考えると、浴中の
Pを酸化してP2O5としこれをスラグにカルシウム塩
として固定しなければならないが、高SiのもとではP
、Siの競合酸化のためPの酸化は起りに<<Siのみ
が優先して酸化する現象がみられ、この現象がみられる
Si域は一般に0.5%以上とされている。On the other hand, when considering deP in a bath where Si coexists, P in the bath must be oxidized to P2O5, which is fixed in the slag as a calcium salt.
Due to competitive oxidation of Si, oxidation of P occurs, but a phenomenon is observed in which only <<Si is preferentially oxidized, and the Si range where this phenomenon occurs is generally considered to be 0.5% or more.
また、精錬(脱P、脱S)を行なわせるためには前述の
ように生石灰を添加してスラグの塩基度を確保しなけれ
ばならない。Furthermore, in order to perform refining (de-P, de-S), quicklime must be added to ensure the basicity of the slag, as described above.
この点から脱Si量が大きくなるにしたがい添加生石灰
量も多くなり、当然スラグ量も増大する。From this point of view, as the amount of Si removed increases, the amount of quicklime added also increases, and naturally the amount of slag also increases.
スラグ量が多くなると鉄歩留の低下、熱効率の低下など
好ましくない結果を招く。If the amount of slag increases, unfavorable results such as a decrease in iron yield and a decrease in thermal efficiency will occur.
上に述べたように高Si域では脱Pが進行しないSi域
があることを考え併せると、この高Si域では脱Pを期
待せず単に脱Siのみを行ない、ある一定値以下のSi
域すなわち脱Siと脱Pとが平行して起りつるSi域で
のみ脱Pを行なわせるのが合理的であることがわかる。Considering that there are Si regions in which P removal does not proceed in the high Si region as mentioned above, in this high Si region, only Si removal is performed without expecting P removal, and Si below a certain value is
It can be seen that it is reasonable to perform P removal only in the Si region, that is, the Si region where Si removal and P removal occur in parallel.
すなわち、脱Pの進行しにくい高Si域では全く脱Pを
対象とせず、この段階では脱Siのみを最も少ないスラ
グ生成条件下で行なうのが得策である。That is, in the high-Si region where P removal is difficult to proceed, it is advisable not to remove P at all, but to perform only Si removal under the least slag generation conditions at this stage.
しかし、塩基性副材料を前提とする精錬ではSiO2は
精錬に必須な成分となる。However, in refining based on basic auxiliary materials, SiO2 becomes an essential component for refining.
すなわち。CaOを用いる一般的な精錬のもとではCa
Oの溶解度を大きくしてスラグになりやすくし、またア
ルカリ金属化合物を用いる精錬ではアルカリ金属の揮発
を抑制し、アルカリ金属化合物を精錬に有効に用いるた
めに必要である。Namely. Under general refining using CaO, Ca
It is necessary to increase the solubility of O to make it easier to form slag, and to suppress the volatilization of alkali metals in refining using alkali metal compounds, so that the alkali metal compounds can be used effectively in refining.
このように溶融金属の精錬には生成SiO2を制御する
ことが精錬を有効に行なううえに必須である。As described above, in refining molten metal, it is essential to control the generated SiO2 in order to effectively perform the refining.
溶銑を主原料とする酸素製鋼法では全てが回分操業で行
なわれているため、同一の炉での操作でSiを事前に調
整することは作業的に困難であり、現実にはダブルスラ
グ吹錬などの支障の多い′操業をとらざるを得ない。In the oxygen steelmaking process, which uses hot metal as the main raw material, all processes are performed in batch operations, so it is difficult to adjust Si in advance in the same furnace, and in reality, double slag blowing is We have no choice but to take operations that pose many problems, such as:
しかし、連続的に溶融金属を精錬する工程においてはS
i量を制御することは容易に行ないうる。However, in the process of continuously refining molten metal, S
The amount of i can be easily controlled.
連続的に精錬する設備として種々のものが知られている
が、これらにおいて本発明のねらいとする合理的な精錬
の基本に対処した設備は未だない。Although various types of continuous refining equipment are known, none of these has yet met the fundamentals of rational refining, which is the aim of the present invention.
本発明はこれら連続的に溶融金属を精錬する方法におい
て、合理的に精錬を進めるための設備に関するものであ
る。The present invention relates to equipment for rationally proceeding with these methods of continuously refining molten metal.
すなわち、溶融金属を連続的に精錬する装置において、
脱Pを行なう工程の前に脱Siのみを行なうことを目的
とする条件下でSiを調節する機能をもち、他の反応室
と隔壁で仕切られた独立の反応室を同一反応槽内に有す
ることを特徴とする。That is, in a device that continuously refines molten metal,
It has the function of adjusting Si under conditions for the purpose of only removing Si before the step of removing P, and has an independent reaction chamber separated from other reaction chambers by a partition wall in the same reaction tank. It is characterized by
ここで用いる反応槽とは一つの鉄皮内に築造される反応
用の設備を指す。The term "reaction tank" as used herein refers to reaction equipment constructed within a single steel shell.
事前にSiのみを低減することはアクティブミキサーな
どの混銑炉内で脱Siを行なう方法として知られている
が、これは回分法で脱Siするためこの方法を連続的に
精錬する装置と組合せるのは得策ではない。Reducing only Si in advance is known as a method of removing Si in a mixer furnace such as an active mixer, but this method is combined with a continuous refining device to remove Si in a batch method. is not a good idea.
連続的に脱Siのみを行なうために、脱Pなどの精錬を
行なう反応槽と別個に独立の脱Si槽をもうけることも
できるが、次の点で望ましくない方法といえる。In order to perform only continuous removal of Si, it is possible to provide a separate reaction tank for removing Si from a reaction tank for refining such as P removal, but this method is undesirable due to the following points.
(1)脱Siの反応速度は酸素供給律速であり、しかも
酸素効率が高いため脱Pを対象にするのと異なり反応室
を小さく設計することが可能であり、独立の反応槽を設
けるのは得策ではない。(1) The reaction rate for Si removal is rate-limited by oxygen supply, and the oxygen efficiency is high, so unlike the case for P removal, the reaction chamber can be designed to be small, and installing an independent reaction tank is It's not a good idea.
(2)反応槽を別個に独立に設けると、両槽の間を溶融
金属が移動する際に大気に触れる、もしくは耐火物製の
樋に触れるなど冷却される機会が増し熱エネルギー保存
の面から望ましくなく、一槽内に脱Si室を設けると溶
融金属は単に隔壁の下を通るのみで熱を損失する機会が
全くない。(2) If the reaction tanks are installed separately, there is an increased chance of the molten metal being cooled as it comes into contact with the atmosphere or touching a refractory gutter as it moves between the two tanks, from the standpoint of thermal energy conservation. Undesirably, if a desiliconization chamber is provided in one tank, the molten metal simply passes under the partition wall, and there is no opportunity for heat loss.
(3)別個の反応槽を設けると、設備費の増大はもとよ
り保守個所の増大、作業量の増大などを招来し望ましく
ない。(3) Providing a separate reaction tank is undesirable because it not only increases equipment costs but also increases the number of maintenance points and workload.
このように反応槽内を区切り脱Si専用の反応室を設け
、しかもこれと他の反応室とを隔壁下部で連結させる方
法は反応槽を連ねる方法にはない多くの利点を有してお
り、これらの利点を最大限に発揮する炉体構造を発明し
た。This method of dividing the inside of the reaction tank, creating a reaction chamber exclusively for removing Si, and connecting this to other reaction chambers at the bottom of the partition wall has many advantages over the method of connecting reaction tanks. We have invented a furnace structure that maximizes these advantages.
すなわち本発明は、溶融金属を連続的に精錬する装置に
おいて、脱P脱Sなどの精錬を主体とする反応室の溶融
金属流の上流側に隣接し、隔壁で仕切られしかも隔壁下
部で両室の溶融金属のみが連結され1反応室と同一の炉
外殻鉄皮下にある脱Si専用の反応室を設けることを特
長とする。That is, the present invention provides an apparatus for continuously refining molten metal, which is adjacent to the upstream side of the molten metal flow in a reaction chamber mainly used for refining such as deP removal and deS, and is partitioned by a partition wall, and both chambers are connected at the bottom of the partition wall. It is characterized by the provision of a reaction chamber exclusively for Si removal, which is connected to only the molten metal of 1 and is located under the same furnace outer shell as one reaction chamber.
詳細に説明するために、連続的な精錬炉として溝型炉(
浴の長手方向と直角な断面形状が正方形もしくは長方形
に類似しており、浴の長さく」浴中の2倍以上ある炉)
を例にする。To explain in detail, a trench furnace (
A furnace in which the cross-sectional shape perpendicular to the longitudinal direction of the bath resembles a square or rectangle, and the length of the bath is more than twice that of the bath.
Take for example.
本発明の脱Si専用室を設けた溝型炉の一例を図示する
と第1図のようになる。An example of a trench type furnace provided with a dedicated chamber for removing Si according to the present invention is shown in FIG. 1.
溝型炉での溶融金属の流れの方向に直角に耐火物製の仕
切壁3を設け、その底部は炉底5から離れており、炉内
を流れる溶融金属(1脱Si室1と脱P反応室2と仕切
壁下で連結されているが、浴上のスラグは仕切壁で隔離
されている。A refractory partition wall 3 is provided perpendicularly to the flow direction of the molten metal in the trench type furnace, and its bottom is separated from the furnace bottom 5. Although it is connected to the reaction chamber 2 under the partition wall, the slag on the bath is isolated by the partition wall.
脱Si室1の浴中は脱P反応室2の浴中と同一である必
要はなく、同室内での滞留時間を確保するため脱Si室
内をより広くするのが得策の場合が多い(第1図側壁4
参照)。The bath in the desiliconization chamber 1 does not have to be the same as the bath in the dephosphorization reaction chamber 2, and it is often a good idea to make the desiliconization chamber wider in order to ensure residence time in the same chamber. 1 side wall 4
reference).
また、脱Si室内での脱Si量が大きい場合には同室内
溶銑の温度上昇が大きくなり、同室内にスクラップなど
の片材を投入して浴を冷却する必要がある。Furthermore, when the amount of Si removed in the Si removal chamber is large, the temperature of the hot metal in the same chamber increases significantly, and it is necessary to cool the bath by putting pieces of material such as scrap into the same chamber.
同室に片材を投入、装入した際の衛撃、(特に炉床耐火
物に対して)を緩和するために浴深を脱P反応室より大
きくする必要がある場合があり(例えば片材の単重が大
きい場合など)、この場合には5bように深くするのが
得策であり、ゴ般的に50cIfL以上の浴深を確保す
るのが得策である。In some cases, it may be necessary to make the bath depth larger than that of the deP reaction chamber (for example, to reduce the impact on hearth refractories) when pieces are introduced into the same chamber. (e.g., when the unit weight of the bath is large), in this case it is a good idea to make the bath depth as deep as 5b, and generally it is a good idea to ensure a bath depth of 50 cIfL or more.
脱Si室1の溶融金属浴面7の上部側壁には排滓を目的
とする外気と通ずる排滓孔8を1個もしくは複数個設け
ており、また脱Si室の天井6.側壁、炉底の任意の場
所には副材料およびスクラップなどの冷却剤の装入およ
び脱Si用酸素を吹き込むことを目的とした穴9,10
を1個もしくは複数個設けている。The upper side wall of the molten metal bath surface 7 of the Si removal chamber 1 is provided with one or more slag exhaust holes 8 that communicate with outside air for the purpose of removing slag, and the ceiling 6 of the Si removal chamber 1 is provided with one or more slag exhaust holes 8 communicating with outside air for the purpose of exhausting slag. Holes 9 and 10 are provided at arbitrary locations on the side walls and bottom of the furnace for the purpose of charging coolant such as auxiliary materials and scrap and blowing oxygen for removing Si.
One or more are provided.
脱Si室の大きさは除去すべきSi量、処理溶融金属量
によって決定される。The size of the Si removal chamber is determined by the amount of Si to be removed and the amount of molten metal to be processed.
除去すべきSi量は、装入溶融金属Si含有量(%と脱
リ反応室内で必要とするSi量((至)との差で定まり
、脱P反応室で必要とするSi(資)は前述のように0
.5%以下となるのが一般的である。The amount of Si to be removed is determined by the difference between the charged molten metal Si content (%) and the amount of Si required in the dephosphorization reaction chamber. 0 as mentioned above
.. Generally, it is 5% or less.
本発明者らの知見によると、脱Si室内での溶融金属の
滞留時間は脱Si量0.1%当り0.5〜3.5分とす
るのが適切である。According to the findings of the present inventors, it is appropriate that the residence time of the molten metal in the Si removal chamber is 0.5 to 3.5 minutes per 0.1% of the amount of Si removed.
上記時間より短いと送酸量(単位時間当り)を大きくし
なければならず、その結果地金付着などが激しくなり安
定した操業ができにくくなり、これを解決するためにラ
ンス本数を増すと脱Si室の長さを太きくしなければな
らず、設備費、耐火物原単位の面から望ましくない。If the time is shorter than the above, the amount of oxygen supplied (per unit time) must be increased, and as a result, metal adhesion becomes severe, making stable operation difficult. The length of the Si chamber must be increased, which is undesirable from the viewpoint of equipment cost and refractory unit consumption.
また、滞留時間を長くすると脱Si室が大きくなり、前
記同様設備費、耐火物原単位の面から望ましくない。Furthermore, if the residence time is increased, the Si removal chamber becomes larger, which is undesirable from the viewpoint of equipment cost and refractory unit consumption, as described above.
脱Si室での脱Siは、脱Siのみを目的とするため極
力単純な操業条件をとることが望ましいが、全<CaO
を添加せぬ5i02およびFeOのみの生成スラグでは
スラグの粘性が高く、排滓困難2粒鉄含有最大などの問
題を生ずるので、スラグ粘性を低下させるための生石灰
の添加が必要となり、その量はスラグ塩基度(CaO)
7 (sio2)0.7〜1.0を目標にして決定す
ればよい。Since the purpose of Si removal in the Si removal chamber is only to remove Si, it is desirable to use as simple operating conditions as possible;
Slag produced only with 5i02 and FeO without the addition of 5i02 and FeO has high viscosity and causes problems such as difficulty in slag removal and maximum content of 2 grains of iron. Therefore, it is necessary to add quicklime to reduce the slag viscosity, and the amount of Slag basicity (CaO)
7 (sio2) 0.7 to 1.0 may be determined as a target.
本発明の方法による実施例を述べる。Examples of the method of the present invention will be described.
本発明の方法の対象とする溶融金属は、溶融製鋼用銑鉄
、溶融鉄および溶融合金鉄など広範囲のものを含むが、
実施例としては溶融製鋼用銑鉄を対象とした例で説明す
る。Molten metals targeted by the method of the present invention include a wide range of metals such as pig iron for molten steel production, molten iron, and molten alloy iron.
As an example, an example will be explained in which pig iron for molten steel manufacturing is targeted.
第2図に示すような形状を有する溝型精錬炉の脱リン反
応室の溶銑流の上流側に、脱リン反応室と仕切壁を(J
さんで隣接する1次の寸法をもつ予備膜ケイ室を設けた
。A dephosphorization reaction chamber and a partition wall (J
A preliminary membrane chamber with primary dimensions was provided adjacent to each other.
溶銑は装入孔11より連続的に装入され、脱ケイ室1お
よび脱リン反応室2で精錬され、出銑孔14から連続的
に排出される。Hot metal is continuously charged from the charging hole 11, refined in the desiliconization chamber 1 and the dephosphorization reaction chamber 2, and continuously discharged from the tap hole 14.
脱Si室1と脱P反応室2は仕切壁3をはさんで隣接し
、仕切壁下部で溶銑は流通しスラグのみが隔離されてい
る。The Si-removal chamber 1 and the P-removal reaction chamber 2 are adjacent to each other with a partition wall 3 in between, and the hot metal flows under the partition wall, and only the slag is isolated.
また、脱Si室はスクラップなどの片材を投入すること
を前提とし、浴深5浴巾4を脱P反応室より大きくしで
ある。Furthermore, the bath depth 5 and bath width 4 are larger than those of the P removal reaction chamber on the premise that pieces of material such as scraps are to be input into the Si removal chamber.
炉体天井部6には、浴酸化用の02を供給する1本のラ
ンス用の孔9および副材料(CaO)、片材などの投入
用の装入孔10があり、かつ炉側部には脱Si室用の排
滓孔8が設けられている。The ceiling 6 of the furnace body has a lance hole 9 for supplying 02 for bath oxidation, and a charging hole 10 for charging auxiliary material (CaO), piece material, etc. A slag discharge hole 8 for the Si removal chamber is provided.
なお、12は脱P反応室2のランス用孔、13は副材料
装入孔、14は精錬後のメタル排出孔、15は仕切壁、
11排気筒である。In addition, 12 is a lance hole of the deP reaction chamber 2, 13 is an auxiliary material charging hole, 14 is a metal discharge hole after refining, 15 is a partition wall,
11 exhaust stack.
脱P反応室での浴断面形状は巾50 cm 、深さ25
cIfLであるのに対し、脱Si室は次の寸法で築造し
た。The cross-sectional shape of the bath in the deP reaction chamber is 50 cm wide and 25 cm deep.
cIfL, the Si-free chamber was constructed with the following dimensions.
脱Si用酸素
巾
0GIrL
深さ
0cm
長さ
200crrL
同脱Si室に溶銑を50T/hr、の速度で供給し次の
条件で脱Siした。Oxygen width for Si removal: 0 GIrL Depth: 0 cm Length: 200 crrL Hot metal was supplied to the Si removal chamber at a rate of 50 T/hr, and Si was removed under the following conditions.
(滞留時間5分)生石灰原単位 5kg/T・溶銑
送酸速度 300 Nm”/ h r上記処理で
〔%Si)を0.61から0.29まで低減することが
でき、浴温は153℃の上昇を示した。(Residence time: 5 minutes) Quicklime consumption rate: 5 kg/T Hot metal acid feeding rate: 300 Nm”/hr The above treatment can reduce [%Si] from 0.61 to 0.29, and the bath temperature is 153°C. showed an increase in
(冷却材としてのスクラップの装入なし)上記の脱Si
を脱P反応室とは独立した取鍋型の炉(径3 m 、深
さ2m)で連続的に行ない、上記と同一条件下で脱Si
したのも耐火物製の樋を用いて脱P反応室に供給した。(Without charging of scrap as a coolant) The above-mentioned Si removal
The process was carried out continuously in a ladle-shaped furnace (diameter 3 m, depth 2 m) independent of the deP reaction chamber, and deSi was removed under the same conditions as above.
This was also supplied to the deP reaction chamber using a refractory gutter.
浴温は前記と同一の脱Si量のもとて130℃しか上昇
しておらず、輸送時に23℃の浴温損失(約15係に相
当)があることがあきらかとなり、本発明の有利性があ
きらかとなった。The bath temperature increased by only 130°C with the same amount of Si removed as above, and it became clear that there was a bath temperature loss of 23°C (corresponding to about 15 degrees Celsius) during transportation, demonstrating the advantages of the present invention. It became clear.
第1図a、bは本発明の精錬炉における脱ケイ室形状を
示し、aは平面断面図、bは正面断面図である。
第2図a、l)は本発明の精錬炉の具体例を示し、a(
」側面断面図、bは平面断面図である。
1・・・・・・脱ケイ室、2・・・・・・脱リン反応室
、3・・・・・・仕切壁、4・・・・・・脱ケイ室側壁
、5・・・・・・脱ケイ室炉底、6・・・・・・炉天井
、7・・・・・・浴面、8・・・・・・排滓孔。
9・・・・・・ランス用孔(脱Si室)、10・・・・
・・副材料、スクラップ装入用孔、11・・・・・・溶
銑装入孔、12・・・・・・ランス用孔(脱P反応室)
、13・・・・・・副材料装入孔(脱P反応室)、14
・・・・・・精錬後のメタル排出孔、15・・・・・・
仕切壁、16・・・・・・排気筒。Figures 1a and 1b show the shape of the desiliconization chamber in the refining furnace of the present invention, where a is a plan sectional view and b is a front sectional view. Figure 2 a, l) shows a specific example of the refining furnace of the present invention, and a (
''A side sectional view, b is a plan sectional view. 1...Desiliconization chamber, 2...Dephosphorization reaction chamber, 3...Partition wall, 4...Side wall of desiliconization chamber, 5... ... Desilicating chamber hearth bottom, 6 ... furnace ceiling, 7 ... bath surface, 8 ... slag drainage hole. 9...Lance hole (Si removal chamber), 10...
...Auxiliary material, scrap charging hole, 11...Hot metal charging hole, 12...Lance hole (DeP reaction chamber)
, 13...Auxiliary material charging hole (DeP reaction chamber), 14
...Metal discharge hole after refining, 15...
Partition wall, 16...Exhaust pipe.
Claims (1)
どの精錬を行なう反応室の溶融金属流の上流側に仕切壁
を介して隣接する脱ケイ反応専用の脱ケイ室をもつこと
を特徴とする脱ケイ専用の反応室をもつ連続的精錬炉。1. A furnace for continuously refining molten metal, characterized by having a desiliconization chamber exclusively for desiliconization reaction adjacent to the molten metal flow through a partition wall on the upstream side of the molten metal flow of the reaction chamber for refining such as dephosphorization. A continuous smelting furnace with a reaction chamber dedicated to desiliconization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4666676A JPS5856006B2 (en) | 1976-04-26 | 1976-04-26 | Continuous smelting furnace with a reaction chamber dedicated to desiliconization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4666676A JPS5856006B2 (en) | 1976-04-26 | 1976-04-26 | Continuous smelting furnace with a reaction chamber dedicated to desiliconization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52130414A JPS52130414A (en) | 1977-11-01 |
| JPS5856006B2 true JPS5856006B2 (en) | 1983-12-13 |
Family
ID=12753663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4666676A Expired JPS5856006B2 (en) | 1976-04-26 | 1976-04-26 | Continuous smelting furnace with a reaction chamber dedicated to desiliconization |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856006B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12378617B2 (en) * | 2019-05-24 | 2025-08-05 | Tata Steel Nederland Technology B.V. | Device and method for continuous desulphurisation of liquid hot metal |
-
1976
- 1976-04-26 JP JP4666676A patent/JPS5856006B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52130414A (en) | 1977-11-01 |
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