JPS586287B2 - Manufacturing method of thick film varistor - Google Patents
Manufacturing method of thick film varistorInfo
- Publication number
- JPS586287B2 JPS586287B2 JP54053102A JP5310279A JPS586287B2 JP S586287 B2 JPS586287 B2 JP S586287B2 JP 54053102 A JP54053102 A JP 54053102A JP 5310279 A JP5310279 A JP 5310279A JP S586287 B2 JPS586287 B2 JP S586287B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- powder
- thick film
- film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000843 powder Substances 0.000 claims description 20
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000002562 thickening agent Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 5
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 241001134453 Lista Species 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Motor Or Generator Current Collectors (AREA)
Description
【発明の詳細な説明】
本発明は主として小型電動機の整流子と刷子との間に発
生する火花放電を消去するのに適した厚膜バリスタの製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention mainly relates to a method of manufacturing a thick film varistor suitable for eliminating spark discharge generated between a commutator and a brush of a small electric motor.
一般に電気接点は回路を遮断するときに急激な電流変化
を生じ、それに伴なう自己誘導によってサージ電圧を誘
起し、接点間に火花放電を生じる。Generally, when an electric contact breaks a circuit, a sudden change in current occurs, and the accompanying self-induction induces a surge voltage, causing a spark discharge between the contacts.
この火花放電は接点または整流子や刷子の摩耗を促進し
、それによって電動機の寿命が縮められるだけでなく、
雑音源として各種機器に対して種々の障害を与える。This spark discharge not only accelerates the wear of contacts or commutators and brushes, thereby shortening the life of the motor;
As a noise source, it causes various disturbances to various devices.
そのために整流子セグメント間に抵抗体やコンデンサを
接続したり、あるいはSiCバリスタや酸化物半導体を
リング状に焼結させて作ったバリスタが使用されるよう
になってきた。For this purpose, a resistor or a capacitor is connected between commutator segments, or a varistor made by sintering a SiC varistor or an oxide semiconductor into a ring shape has come to be used.
しかし、抵抗体等では火花消去や雑音抑制に顕著な効果
がなく、またSiCバリスタ等は抵抗体等に比して有効
ではあるが、その形状から取付け方法や取付け空間にお
いて問題を残すものである。However, resistors do not have a significant effect on eliminating sparks or suppressing noise, and SiC varistors, etc. are more effective than resistors, but their shape leaves problems in the installation method and installation space. .
今、バリスタに要求される性能の一つに非直線係数が大
きいことが挙げられる。One of the performances required of varistors these days is a large nonlinear coefficient.
特に小型電動機への適用に関しては、火花電圧を抑制し
て電気雑音を吸収し、整流子や刷子の摩耗を軽減すると
ともに、反面整流子の火花によるクリーニング効果も必
要なのである。In particular, when applied to small electric motors, it is necessary to suppress spark voltage, absorb electrical noise, and reduce wear on commutators and brushes, and on the other hand, it is necessary to have a cleaning effect using commutator sparks.
つまり適度な非直線係数αを有するバリスタが最適であ
り、量産するに当ってはこの非直線係数αがばらつかな
いことが必要である。In other words, a varistor having an appropriate nonlinear coefficient α is optimal, and for mass production, it is necessary that this nonlinear coefficient α does not vary.
本発明は火花放電を適切なレベルで抑制し、非直線係数
αのバラツキを小さくするとともに負荷耐量の向上を図
ることを目的とする。An object of the present invention is to suppress spark discharge to an appropriate level, reduce variations in the nonlinear coefficient α, and improve load withstand capacity.
すなわち、従来にあってはバリスタ粉体とこれを結合す
るガラスフリットからなる厚膜バリスタにおいて、適切
な非直線係数αを得るためにバリスタ粉体として、酸化
亜鉛に酸化ビスマス、酸化コバルト、酸化マンガン等を
添加して混合・成型・焼成する。In other words, in conventional thick-film varistors made of varistor powder and glass frit that binds it together, zinc oxide, bismuth oxide, cobalt oxide, and manganese oxide are used as varistor powder to obtain an appropriate nonlinear coefficient α. etc. are added, mixed, molded, and fired.
焼成後、乳鉢によって粗粉砕し、その後ポットミルにて
微粉砕し、印刷に適正な粒径のバリスタ粉を得ていた。After firing, it was coarsely ground in a mortar and then finely ground in a pot mill to obtain barista powder with a particle size suitable for printing.
しかしながら、このように機械的に粉砕することによっ
て得られるバリスタ粉の粒子は、その形状もそれぞれ異
なり、またその粒径のバラツキも大きいものである。However, the particles of barista powder obtained by such mechanical pulverization have different shapes and large variations in particle size.
これに対して本発明によれば、バリスタ粉体として酸化
亜鉛に酸化コバルト、酸化マンガン、酸化ニッケルそし
て炭酸バリウムを加えて混合・成型・焼成し、焼成後焼
結体を水中に投入し加水分解によって印刷に適正な粒径
のバリスタ粉を得るものである。In contrast, according to the present invention, cobalt oxide, manganese oxide, nickel oxide, and barium carbonate are added to zinc oxide as varistor powder, mixed, molded, and fired, and after firing, the sintered body is placed in water and hydrolyzed. By this process, varistor powder with a particle size suitable for printing can be obtained.
このように化学的な方法で得られる?リスタ粉体は、従
来機械的に粉砕していたバリスタ粉体に比べて粒子の形
状もそろっており、また粒径のバラツキも小さいもので
ある。Can it be obtained by chemical methods like this? Compared to varistor powder, which has conventionally been mechanically pulverized, Lista powder has more uniform particle shapes and smaller variations in particle size.
したがって、このバリスタ粉体を用いた厚膜バリスタに
おいては、その非直線係数αのバラツキも小さく、合せ
て負荷耐量も向上するものである。Therefore, in a thick film varistor using this varistor powder, the variation in the nonlinear coefficient α is small, and the load withstand capacity is also improved.
以下、実施例に基づいて第1図とともに説明する。Hereinafter, an explanation will be given based on an example with reference to FIG. 1.
バリスタ粉体の組成として、ZnO,CO03+Mn0
2 , Ni O , Ba C 03を秤量し、これ
をポットミルに移して純水を加えて20時間湿式混合す
る混合した後、スラリーを取り出して乾燥させる。The composition of the varistor powder is ZnO, CO03+Mn0
2, NiO, and BaC03 were weighed, transferred to a pot mill, added pure water, and wet-mixed for 20 hours. After mixing, the slurry was taken out and dried.
乾燥した粉体を32メッシュをパスさせ、パスした粉体
を圧力3 0 0kg/cm’,直径20mm、厚み約
1mmのディスク状に成型する。The dried powder is passed through a 32 mesh, and the passed powder is molded into a disc shape with a pressure of 300 kg/cm', a diameter of 20 mm, and a thickness of about 1 mm.
この成型品を1050℃〜1350℃の温度で焼成する
。This molded product is fired at a temperature of 1050°C to 1350°C.
焼結体を水中に投入し、2〜3日放置する。The sintered body is placed in water and left for 2 to 3 days.
2〜3日後にはBaCO3が水に溶融して、焼結体が粉
体となる。After 2 to 3 days, BaCO3 is dissolved in water and the sintered body becomes powder.
こうして得られたバリスタ粉体と、ガラストフリットの
量がバリスタ粉体とガラスフリットの総量に対して2〜
50wt%である固形分に、ビヒクルを加えてペースト
とする。The amount of the varistor powder and glass frit obtained in this way is 2 to 2 to the total amount of the varistor powder and glass frit.
A vehicle is added to the solid content of 50 wt% to form a paste.
ビヒクルはペーストを作るために必要なものであり、バ
リスタ膜の焼成中に飛散するものであれば特にその種類
に制限はないが、エチルセルローズをカルビトールアセ
テートに溶解したものを用いた。The vehicle is necessary for making the paste, and there is no particular restriction on the type as long as it is dispersed during firing of the varistor film, but a vehicle prepared by dissolving ethyl cellulose in carbitol acetate was used.
こうして得られたバリスタペーストを電気絶縁性基板1
上に印刷された下部電極2上に印刷・焼成することによ
ってバリスタ膜3が形成される。The varistor paste thus obtained was applied to the electrically insulating substrate 1.
The varistor film 3 is formed by printing and baking the lower electrode 2 printed thereon.
さらに、バリスタ膜3の上に上部電極4を印刷・焼成す
ることによって厚膜バリスタが得られる。Further, by printing and firing the upper electrode 4 on the varistor film 3, a thick film varistor can be obtained.
今、バリスタ膜厚30μ、バリスタ面積5−のバリスタ
について、10mAの電流を流した時の端子間電圧(バ
リスタ電圧) V1o1電流1mAと10mAを流した
ときの電圧非直線係数1α1o及び第2図に示すパルス
試験回路で100mJのエネルギを有するパルスを5秒
間隔で10回印加した時のVIOの変化率を調べ、下記
の表に示す。Now, for a varistor with a varistor film thickness of 30μ and a varistor area of 5-, the voltage between the terminals (varistor voltage) when a current of 10mA is applied, V1o1, the voltage nonlinear coefficient 1α1o when currents of 1mA and 10mA are applied, and Figure 2. The rate of change in VIO when pulses having an energy of 100 mJ were applied 10 times at 5 second intervals using the pulse test circuit shown was investigated and is shown in the table below.
表から明らかなように本発明の厚膜バリスタは、電流1
mA及び1 0 mAにおける電圧非直線係数1α1o
のバラツキは従来に比べて小さく、またパルス負荷耐量
においても効果がある。As is clear from the table, the thick film varistor of the present invention has a current of 1
Voltage nonlinear coefficient 1α1o at mA and 10 mA
The variation in is smaller than that of the conventional method, and it is also effective in terms of pulse load withstand capacity.
バリスタ組成において、炭酸バリウムを0.1mol%
から5.0mol%としたのは、0、1mol%以下の
場合には加水分解が困難となるからであり、また5.0
mol%以上の場合にはZnOが過大に粒成長するとと
もに加水分解後の炭酸バリウムの除去が困難となるため
である。In the barista composition, barium carbonate is 0.1 mol%
The reason for setting it to 5.0 mol% is because hydrolysis becomes difficult if it is less than 0.1 mol%, and 5.0 mol% or less is difficult.
This is because if the amount exceeds mol %, grains of ZnO will grow excessively and it will be difficult to remove barium carbonate after hydrolysis.
なお、本発明はバリスタ粉の粒子の形状をそろえ、また
粒径のバラツキを小さくすることによってバリスタ電圧
、非直線係数αのバラツキを小さくシ、かつパルス耐量
を向上させるものである。The present invention is intended to reduce variations in the varistor voltage and nonlinear coefficient α and to improve pulse withstand capacity by aligning the shape of the particles of varistor powder and reducing variations in particle size.
したがって、バリスタ組成としてZnOに添加する金属
酸化物は上記の表に示す金属酸化物に限定されるもので
はなく、非直線係数αを向上させるものであればよい。Therefore, the metal oxide added to ZnO as a varistor composition is not limited to the metal oxides shown in the above table, but may be any metal oxide that improves the nonlinear coefficient α.
また、バリスタ粉体とガラスフリットの総量に対するガ
ラスフリットの量も表に示すように限定されたものでは
なく、2〜50wt%の範囲であればよい。Furthermore, the amount of glass frit relative to the total amount of varistor powder and glass frit is not limited as shown in the table, but may be in the range of 2 to 50 wt%.
以上、本発明による厚膜バリスタの製造方法においては
電圧非直線係数αのバラツキが小さく、パルス負荷耐量
の大きいものが得られ、また小型電動機への適用に当っ
ては電気雑音を吸収し、整流子や刷子を保護するもので
ある。As described above, the thick film varistor manufacturing method according to the present invention has a small variation in the voltage nonlinear coefficient α and a large pulse load capacity. It protects the children and brushes.
第1図は本発明方法により得られる厚膜バリスタの正面
断面図、第2図はバリスタのパルス試験回路である。
1・・・・・・電気絶縁性基板、2・・・・・・下部電
極、3・・・・・・バリスタ膜、4・・・・・・上部電
極。FIG. 1 is a front sectional view of a thick film varistor obtained by the method of the present invention, and FIG. 2 is a pulse test circuit for the varistor. DESCRIPTION OF SYMBOLS 1... Electric insulating substrate, 2... Lower electrode, 3... Varistor film, 4... Upper electrode.
Claims (1)
なる厚膜バリスタにおいて、ZnOに数種の金属酸化物
とBaCO3を0. 1 〜5. 0 mol %添加
し、混合・成型・焼成後、加水分解によって焼結体から
上記バリスタ粉体を得、このバリスタ粉体とガラスフリ
ットに増粘剤を含む溶剤を加えたペーストを電気絶縁性
基板の上に直接あるいは電極を介して塗布し、バリスタ
膜を形成したことを特徴とする厚膜バリスタの製造方法
。1. In a thick film varistor consisting of varistor powder and glass frit bonding it together, several metal oxides and BaCO3 are added to ZnO at 0.00%. 1 to 5. After mixing, molding and firing, the above varistor powder is obtained from the sintered body by hydrolysis, and a paste made by adding a solvent containing a thickener to this varistor powder and glass frit is applied to an electrically insulating substrate. A method for manufacturing a thick film varistor, characterized in that a varistor film is formed by applying the film directly or via an electrode on the thick film varistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54053102A JPS586287B2 (en) | 1979-04-27 | 1979-04-27 | Manufacturing method of thick film varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54053102A JPS586287B2 (en) | 1979-04-27 | 1979-04-27 | Manufacturing method of thick film varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55145302A JPS55145302A (en) | 1980-11-12 |
| JPS586287B2 true JPS586287B2 (en) | 1983-02-03 |
Family
ID=12933418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54053102A Expired JPS586287B2 (en) | 1979-04-27 | 1979-04-27 | Manufacturing method of thick film varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586287B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6412282A (en) * | 1987-07-06 | 1989-01-17 | Japan Tech Res & Dev Inst | Laser detecting and detecting gunnery apparatus |
-
1979
- 1979-04-27 JP JP54053102A patent/JPS586287B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6412282A (en) * | 1987-07-06 | 1989-01-17 | Japan Tech Res & Dev Inst | Laser detecting and detecting gunnery apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55145302A (en) | 1980-11-12 |
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