JPS588576B2 - Method for developing electron beam resist using gas plasma - Google Patents
Method for developing electron beam resist using gas plasmaInfo
- Publication number
- JPS588576B2 JPS588576B2 JP51026728A JP2672876A JPS588576B2 JP S588576 B2 JPS588576 B2 JP S588576B2 JP 51026728 A JP51026728 A JP 51026728A JP 2672876 A JP2672876 A JP 2672876A JP S588576 B2 JPS588576 B2 JP S588576B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- gas plasma
- beam resist
- developing
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】
この発明は、プラズマ特にアルコール系のガスプラズマ
の化学反応を利用して電子ビームで露光された電子ビー
ムレジストを現像する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for developing an electron beam resist exposed to an electron beam using a chemical reaction of a plasma, particularly an alcohol-based gas plasma.
従来知られているＰＭＭＡ（電子ビームレジストの一例
）の現像方法は、メチルエチルケトン（ＭＥＫ）：イソ
プロピルアルコール（ＩＰＡ）＝７：３、あるいはメチ
ルイソブチルケトン（ＭＩＢＫ）：イソプロピルアルコ
ール（ＩＰＡ）＝１：３等のいわゆるウエット・ケミカ
ルな方法で現像されていた。Conventionally known developing methods for PMMA (an example of electron beam resist) include methyl ethyl ketone (MEK): isopropyl alcohol (IPA) = 7:3, or methyl isobutyl ketone (MIBK): isopropyl alcohol (IPA) = 1:3. It was developed using a so-called wet chemical method.
このような従来のウエット方法による現像方法では、現
像液の温度を管理する必要があり、しかも使用回数によ
る差があるばかりでなく、一回の処理枚数にも制限があ
った。In such a conventional wet developing method, it is necessary to control the temperature of the developer, and not only does it vary depending on the number of times it is used, but there is also a limit to the number of sheets that can be processed at one time.
この発明は、上記従来のウエット方法による現像方法の
欠点を除去し、処理された半導体基板も非常に清浄で、
大量に精度よく、かつ容易に現像することが可能な現像
方法を提供するものである。This invention eliminates the drawbacks of the conventional wet developing method, and the processed semiconductor substrate is also very clean.
It is an object of the present invention to provide a developing method that enables accurate and easy development in large quantities.
以下この発明について説明する。This invention will be explained below.
第１図に示すように半導体基板１上にＰＭＭＡ２を約２
０００Åの厚さに塗布し、そのＰＭＭＡ２を約１０−４
クローン／ｃｍ３の電子ビーム３で露光し、試料Ａを作
る。As shown in FIG.
000 Å thick, and the PMMA2 was coated to a thickness of about 10-4
Sample A is prepared by exposing to electron beam 3 of clones/cm3.
次に第２図に示すような高周波対電極４間に置かれた石
英放電管５中に、上記試料Ａを石英支持台６にのせた状
態で挿入し、石英放電管５の内部を約０． １Ｔｏｒｒ
の真空に保ち、一方、エチルアルコール７中をアルゴン
ガス８をバブルせしめて、エチルアルコールをある割合
に含んだアルゴンガス９を石英放電管５中に導き、上記
高周波対電極４間に高周波電圧１０を印加し、石英放電
管５中にエチルアルコール７とアルゴンガス８のプラズ
マを発生させる。Next, the sample A was placed on a quartz support 6 and inserted into the quartz discharge tube 5 placed between the high-frequency counter electrodes 4 as shown in FIG. ．． 1 Torr
On the other hand, argon gas 8 is bubbled in ethyl alcohol 7 to introduce argon gas 9 containing a certain proportion of ethyl alcohol into the quartz discharge tube 5, and a high frequency voltage 10 is applied between the high frequency counter electrode 4. is applied to generate plasma of ethyl alcohol 7 and argon gas 8 in the quartz discharge tube 5.
この時の高周波電力は約１００Ｗ、真空度は約０．７Ｔ
ｏｒｒである。The high frequency power at this time is approximately 100W, and the degree of vacuum is approximately 0.7T.
It is orr.
この条件のもとでは電子ビーム照射された２０００Å厚
のＰＭＭＡ２は約３分で完全に除去できる。Under these conditions, the 2000 Å thick PMMA2 irradiated with the electron beam can be completely removed in about 3 minutes.
一方、ＰＭＭＡ２の未照射部は、殆んど除去されず５分
間上記プラズマ中にさらしても変化しない。On the other hand, the unirradiated portion of PMMA2 is hardly removed and does not change even after being exposed to the plasma for 5 minutes.
以上説明したように、この発明による現像方法は処理能
力も一回に数１０枚以上と非常に大きい。As explained above, the developing method according to the present invention has a very large processing capacity of several tens of sheets or more at one time.
またアルゴンガス中にエチルアルコールを含有させるこ
とにより現像時のコントラストを強めることができ、し
かも酸素系のプラズマのように未露光のＰＭＭＡも同時
に反応することが少ないため薄いＰＭＭＡを用いること
ができ、その結果、微細なパターンニングも可能となる
。In addition, the contrast during development can be strengthened by including ethyl alcohol in the argon gas, and since unexposed PMMA is unlikely to react at the same time as in oxygen-based plasma, thin PMMA can be used. As a result, fine patterning is also possible.
さらにクロムのようなハードマスクを電子ビームで製作
する場合には、この発明による現像に続いて同じ反応石
英放電管中で導入ガスを塩素系に変えクロムをプラズマ
エッチングすることも可能となり、一工程でＰＭＭＡの
現像とその下地薄膜のエッチングが可能となる。Furthermore, when producing a hard mask such as chromium using an electron beam, it becomes possible to plasma-etch the chromium by changing the introduced gas to a chlorine-based gas in the same reactive quartz discharge tube following the development according to the present invention, and thereby performing plasma etching of the chromium in one step. This enables development of PMMA and etching of the underlying thin film.
かようにこの発明は種々の利点を有する。This invention thus has various advantages.
第１図はこの発明の加工対象物の一例を説明するための
部分断面図、第２図はこの発明の実施例を説明するため
の装置の一例を示す構成略図である。
図中、１は半導体基板、２はＰＭＭＡ，３は電子ビーム
、４は高周波対電極、５は石英放電管、６は石英支持台
、７はエチルアルコール、８はアルゴンガス、９はエチ
ルアルコールである割合含んだアルゴンガス、１０は高
周波電圧である。FIG. 1 is a partial cross-sectional view for explaining an example of a workpiece according to the present invention, and FIG. 2 is a schematic structural diagram showing an example of an apparatus for explaining an embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2 is PMMA, 3 is an electron beam, 4 is a high-frequency counter electrode, 5 is a quartz discharge tube, 6 is a quartz support, 7 is ethyl alcohol, 8 is argon gas, and 9 is ethyl alcohol. Argon gas containing a certain proportion, 10 is a high frequency voltage.
Claims (1)
に電子ビームを照射し、これをアルゴンをベースにした
アルコール系ガスプラズマ中に浸して前記電子ビームが
照射された部分の電子ビーム露光用レジストのみを分解
反応して除去することを特徴とするガスプラズマによる
電子ビームレジストの現像方法。1. A polymeric electron beam exposure resist is irradiated with an electron beam in a desired pattern, and then immersed in an argon-based alcohol gas plasma to remove only the portions of the electron beam exposure resist that have been irradiated with the electron beam. A method for developing an electron beam resist using gas plasma, which is characterized by removal by decomposition reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51026728A JPS588576B2 (en) | 1976-03-12 | 1976-03-12 | Method for developing electron beam resist using gas plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51026728A JPS588576B2 (en) | 1976-03-12 | 1976-03-12 | Method for developing electron beam resist using gas plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52113163A JPS52113163A (en) | 1977-09-22 |
| JPS588576B2 true JPS588576B2 (en) | 1983-02-16 |
Family
ID=12201371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51026728A Expired JPS588576B2 (en) | 1976-03-12 | 1976-03-12 | Method for developing electron beam resist using gas plasma |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS588576B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60165159U (en) * | 1984-04-06 | 1985-11-01 | 株式会社 東洋空機製作所 | Impact wrench tightening torque control device |
| JPS62203776A (en) * | 1986-02-28 | 1987-09-08 | トヨタ車体株式会社 | Controller for service condition of impact wrench |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5427369A (en) * | 1977-08-01 | 1979-03-01 | Hitachi Ltd | Pattern formation method |
| JPS56137347A (en) * | 1980-03-29 | 1981-10-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive composition for dry development |
-
1976
- 1976-03-12 JP JP51026728A patent/JPS588576B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60165159U (en) * | 1984-04-06 | 1985-11-01 | 株式会社 東洋空機製作所 | Impact wrench tightening torque control device |
| JPS62203776A (en) * | 1986-02-28 | 1987-09-08 | トヨタ車体株式会社 | Controller for service condition of impact wrench |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52113163A (en) | 1977-09-22 |
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