JPS591239B2 - Boat for liquid phase epitaxial growth - Google Patents
Boat for liquid phase epitaxial growthInfo
- Publication number
- JPS591239B2 JPS591239B2 JP16103879A JP16103879A JPS591239B2 JP S591239 B2 JPS591239 B2 JP S591239B2 JP 16103879 A JP16103879 A JP 16103879A JP 16103879 A JP16103879 A JP 16103879A JP S591239 B2 JPS591239 B2 JP S591239B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- raw material
- boat
- material solution
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
本発明は液相エピタキシャル相長用ボートの改良に関す
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in liquid phase epitaxial phase length boats.
半導体レーザ、LEDなどの化合物半導体装置の製造に
は液相エピタキシャル成長法が盛んに使用されている。Liquid phase epitaxial growth is widely used in the manufacture of compound semiconductor devices such as semiconductor lasers and LEDs.
例えば1〔μm〕波長帯光通信用InGaAsP化合物
半導体装置の製造に用いられる化合物半導体基板は、I
nP基板上にInGaAsP等の結晶層を液相エピタキ
シャル成長法により積層して成長せしめることにより製
作される。For example, a compound semiconductor substrate used for manufacturing an InGaAsP compound semiconductor device for optical communication in the 1 [μm] wavelength band is an I
It is manufactured by laminating and growing a crystal layer of InGaAsP or the like on an nP substrate by liquid phase epitaxial growth.
即ち第1図に示すごとく、ボート基板1上面に設けられ
た被処理基板載置部2内に被処理基板であるInP基板
3を載置し、前記ボート基板1上をスライドするスライ
ダ4に設けられた溶液溜め5内にIn、InP、GaA
s、InAsなどの固体を秤量して入れ、これを加熱溶
融した原料溶液6を錘りTで下方に押圧し、次いで第2
図に示すようにスライダ4をスライドせしめて前記原料
溶液6をInP基板3上に移動させ、液相エピタキシャ
ル成長を行なつた後、再びスライダ4をスライドせしめ
て原料溶液6をInP基板3上から除去するという方法
により、InGaAsP等よりなるエピタキシャル成長
層を形成する。That is, as shown in FIG. 1, an InP substrate 3, which is a substrate to be processed, is placed in a substrate placement section 2 provided on the top surface of a boat substrate 1, and an InP substrate 3, which is a substrate to be processed, is placed on a slider 4 that slides on the boat substrate 1. In, InP, and GaA are contained in the solution reservoir 5.
A raw material solution 6 made by weighing and melting a solid such as S, InAs, etc. is pressed downward with a weight T, and then a second
As shown in the figure, slide the slider 4 to move the raw material solution 6 onto the InP substrate 3 and perform liquid phase epitaxial growth, then slide the slider 4 again to remove the raw material solution 6 from the InP substrate 3. By this method, an epitaxial growth layer made of InGaAsP or the like is formed.
ここで錘りはエピタキシャル層周辺部で異常に厚く成長
するのを防止するために用いている。ところが上述のス
ライダ4をスライドせしめて原料溶液6をInP基板3
上から除去する際に原料溶液6は常に錘り1で下方に押
圧されているため、原料溶液の一部がInP基板上に残
存するという問題がある。本発明の目的は被処理基板上
から原料溶液を除去するに際し、原料溶液を押圧する力
を取り除くことにより原料溶液が被処理基板上に残留す
ることを防止し得る液相エピタキシャル成長用ボートを
提供することにある。本発明の特徴は、被処理基板搭載
部を有するボート基板と、原料溶液を収容する溶液溜め
を有し前記ボート基板上をスライドして原料溶液を移動
せしめるスライダと、前記溶液溜め内に嵌挿するその自
重により原料溶液を押す錘りとからなり、該錘りが前記
溶液溜め内において所定の位置より下に下がることを防
止する停止手段と、前記ポート基板に不要の原料溶液を
収容する凹部とを具備せしめた液相エピタキシヤル成長
用ボートにある。Here, the weight is used to prevent the epitaxial layer from growing abnormally thick around the periphery. However, by sliding the slider 4 mentioned above, the raw material solution 6 is transferred to the InP substrate 3.
Since the raw material solution 6 is always pressed downward by the weight 1 when it is removed from above, there is a problem that a part of the raw material solution remains on the InP substrate. An object of the present invention is to provide a boat for liquid phase epitaxial growth that can prevent the raw material solution from remaining on the substrate to be processed by removing the force that presses the raw material solution when removing the raw material solution from the substrate to be processed. There is a particular thing. The present invention is characterized by a boat substrate having a processing target substrate mounting section, a slider having a solution reservoir for storing a raw material solution and sliding on the boat substrate to move the raw material solution, and a slider that is inserted into the solution reservoir. a stop means for preventing the weight from falling below a predetermined position in the solution reservoir; and a recess for accommodating unnecessary raw material solution in the port substrate. A boat for liquid phase epitaxial growth is provided.
以下本発明の実施例を図面により説明する。第3図及び
第4図は本発明の一実施例を示す要部断面図である。第
3図において1はボート基板、2は被処理基板載置部、
3は被処理基板、4はスライダ、5は溶液溜め、6は原
料溶液であつて、これらは従来の液相エピタキシヤル製
造装置と何ら異なる所はない。Embodiments of the present invention will be described below with reference to the drawings. 3 and 4 are sectional views of essential parts showing one embodiment of the present invention. In FIG. 3, 1 is a boat substrate, 2 is a processing substrate mounting section,
Reference numeral 3 denotes a substrate to be processed, 4 a slider, 5 a solution reservoir, and 6 a raw material solution, which are no different from conventional liquid phase epitaxial manufacturing equipment.
7は錘りで上部に鍔8を設けてある。7 is a weight, and a tsuba 8 is provided at the top.
錘り7底面から鍔8下面までの長さは原料溶液6上面か
らスライダ4土面までの長さより僅かに長くしておく。
9は不要となつた原料溶液を収容する凹部で、前記被処
理基板載置部2に対してスライダ4の移動する方向(図
の矢印Aの方向)に設けられる。The length from the bottom surface of the weight 7 to the lower surface of the collar 8 is made slightly longer than the length from the upper surface of the raw material solution 6 to the soil surface of the slider 4.
Reference numeral 9 denotes a recessed portion for accommodating the raw material solution that is no longer needed, and is provided in the direction in which the slider 4 moves with respect to the processing target substrate mounting portion 2 (the direction of arrow A in the figure).
両者の間隔Dは前記溶液溜めの一辺の長さLより小さく
選んでおく。次に上記液相エピタキシヤル成長用ボート
を用いてエピタキシヤル基板を製作する方法について説
明する。The distance D between the two is selected to be smaller than the length L of one side of the solution reservoir. Next, a method for manufacturing an epitaxial substrate using the liquid phase epitaxial growth boat will be described.
第3図に示すごとく被処理基板載置部2内に載置された
被処理基板3表面に、所定の成分組成を有し加熱溶融さ
れ錘り7により押圧された原料溶液6を接触せしめ、所
定の温度に保持することにより所望の厚さに液相エピタ
キシヤル成長を行なう。As shown in FIG. 3, a raw material solution 6 having a predetermined composition, heated and melted, and pressed by a weight 7 is brought into contact with the surface of a substrate to be processed 3 placed in a substrate to be processed mounting section 2, By maintaining the temperature at a predetermined temperature, liquid phase epitaxial growth is performed to a desired thickness.
ここまでは通常の液相エピタキシヤル成長方法と何ら変
るところはない。次いで第4図に示すごとくスライダ4
を図の矢印Aの方向にスライドさせて不要となつた原料
溶液6を被処理基板3土より除去する。Up to this point, there is no difference from the usual liquid phase epitaxial growth method. Next, slider 4 as shown in FIG.
The unnecessary raw material solution 6 is removed from the substrate 3 to be processed by sliding it in the direction of arrow A in the figure.
その過程において図示のように溶液溜め5の端部が凹部
9の端部土に来ると原料溶液6の底が開放され原料溶液
6は凹部9に向かつて流出を始め、原料溶液6の液面は
下降し、それに伴ない錘り7も下降するが鍔8の下面が
すぐにスライダ4の上面に当つて停止する。そのため原
料溶液6に対する錘り7の押圧力はここで消滅するので
、スライダ4を更にスライドさせて原料溶液6を被処理
基板3上より移動せしめれば原料溶液6は被処理基板3
上に残留することなく、すべてが凹部9に収容される。
被処理基板3土に多層エピタキシヤル成長を行なうには
、上述の溶液溜め5と錘り7を前記スライダに所望の数
だけ設け、各溶液溜めに所定の原料溶液を入れ、前述の
操作を順次繰り返すことにより実施できる。なお錘りの
下降を所定の位置で停止せしめる手段は前記実施例に限
定されるものではなく、例えば第5図に示すごとく、溶
液溜め5の側壁を下部が溶液溜め5の内側に突出した階
段状として、錘り7をこの段の所で停止せしめる構造等
種々変形して実施できる。In this process, as shown in the figure, when the end of the solution reservoir 5 reaches the edge soil of the recess 9, the bottom of the raw material solution 6 is opened and the raw material solution 6 begins to flow toward the recess 9, and the liquid level of the raw material solution 6 is lowered, and the weight 7 is also lowered accordingly, but the lower surface of the collar 8 immediately hits the upper surface of the slider 4 and stops. Therefore, the pressing force of the weight 7 against the raw material solution 6 disappears at this point, so if the slider 4 is further slid to move the raw material solution 6 from above the target substrate 3, the raw material solution 6 will be transferred to the target substrate 3.
Everything is accommodated in the recess 9 without any remaining on top.
To perform multilayer epitaxial growth on the substrate 3 to be processed, a desired number of the above-mentioned solution reservoirs 5 and weights 7 are provided on the slider, a predetermined raw material solution is poured into each solution reservoir, and the above-mentioned operations are performed sequentially. This can be done by repeating. Note that the means for stopping the descent of the weight at a predetermined position is not limited to the above embodiment, and for example, as shown in FIG. Various modifications can be made, such as a structure in which the weight 7 is stopped at this step.
以上説明したごとく本発明の液相エピタキシヤル成長用
ボートによれば、被処理基板上から原料溶液を除去する
際に、原料溶液を押圧する力が取り除かれるので原料溶
液が被処理基板上に残留することがない。As explained above, according to the liquid phase epitaxial growth boat of the present invention, when the raw material solution is removed from the substrate to be processed, the force that presses the raw material solution is removed, so that the raw solution remains on the substrate to be processed. There's nothing to do.
第1図及び第2図は従来の液相エピタキシヤル成長用ボ
ートを示す要部断面図、第3図及び第4図は本発明の一
実施例を示す要部断面図、第5図は本発明の他の実施例
を示す要部断面図である。
1・・・・・・ボート基板、2・・・・・・被処理基板
載置部、3・・・・・・被処理基板、4・・・・・・ス
ライダ、5・・・・・・溶液溜め、6・・・・・・原料
溶液、7・・・・・・錘り、8・・・・・・鍔、9・・
・・・・凹部。1 and 2 are sectional views of essential parts showing a conventional liquid phase epitaxial growth boat, FIGS. 3 and 4 are sectional views of essential parts showing an embodiment of the present invention, and FIG. FIG. 7 is a cross-sectional view of main parts showing another embodiment of the invention. DESCRIPTION OF SYMBOLS 1...Boat board, 2...Processed substrate mounting section, 3...Processed substrate, 4...Slider, 5...・Solution reservoir, 6... Raw material solution, 7... Weight, 8... Tsuba, 9...
・・・Concavity.
Claims (1)
を収容する溶液溜めを有し前記ボート基板上をスライド
して原料溶液を移動せしめるスライダと、前記溶液溜め
内に嵌挿するその自重により原料溶液を押す錘りとから
なり、該錘りが前記溶液溜め内において所定の位置より
下に下がることを防止する停止手段と、前記ボート基板
に不要の原料溶液を収容する凹部とを具備せしめたこと
を特徴とする液相エピタキシャル成長用ボート。1. A boat substrate having a substrate mounting section to be processed, a slider having a solution reservoir for storing a raw material solution and sliding on the boat substrate to move the raw material solution, and a slider that is inserted into the solution reservoir and moves the raw material by its own weight. A weight for pushing the solution, a stopping means for preventing the weight from falling below a predetermined position in the solution reservoir, and a recess for accommodating unnecessary raw material solution in the boat substrate. A boat for liquid phase epitaxial growth characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16103879A JPS591239B2 (en) | 1979-12-12 | 1979-12-12 | Boat for liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16103879A JPS591239B2 (en) | 1979-12-12 | 1979-12-12 | Boat for liquid phase epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5684398A JPS5684398A (en) | 1981-07-09 |
| JPS591239B2 true JPS591239B2 (en) | 1984-01-11 |
Family
ID=15727407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16103879A Expired JPS591239B2 (en) | 1979-12-12 | 1979-12-12 | Boat for liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS591239B2 (en) |
-
1979
- 1979-12-12 JP JP16103879A patent/JPS591239B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5684398A (en) | 1981-07-09 |
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