JPS5916407B2 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS5916407B2 JPS5916407B2 JP51092934A JP9293476A JPS5916407B2 JP S5916407 B2 JPS5916407 B2 JP S5916407B2 JP 51092934 A JP51092934 A JP 51092934A JP 9293476 A JP9293476 A JP 9293476A JP S5916407 B2 JPS5916407 B2 JP S5916407B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive sheet
- semiconductor pellet
- semiconductor
- main surface
- needle body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07173—Means for moving chips, wafers or other parts, e.g. conveyor belts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
- H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
- H10W72/07207—Temporary substrates, e.g. removable substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置の製造方法に係わり、更に詳しくは
接着シートに接着されている半導体ペレツトを使用して
半導体装置を製造する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device using semiconductor pellets adhered to an adhesive sheet.
一般に、トランジスタ、ダイオード、C等の半導体ペレ
ツトは多数の素子が格子状に形成された一枚の半導体ウ
エ・・を個々の素子に分割することによつて形成される
。Generally, semiconductor pellets such as transistors, diodes, C, etc. are formed by dividing a single semiconductor wafer in which a large number of elements are formed in a lattice shape into individual elements.
第1図及び第2図には伸縮性のある接着シートを利用し
て半導体ウエ・・を分割し、半導体ペレツトとする最も
一般的な分割方法が示されている。この方法に於いては
、まず第1図に示す如くマスキングシートあるいはエレ
クトロンテープと呼ばれる接着シート1に半導体ウエ・
・2を貼り付けて、スクニイブにより切溝3を形成し、
更にゴム製ローラで屈曲加圧することにより切溝3に沿
つて破断面4を形成して個々の半導体ペレツト5とする
。しかる後接着シートを適当な方法で四方に引き伸ばし
て第2図に示す如く間隔を有した状態に半導体ペレツト
5を配列させる。この状態に於いて半導体ペレツトは方
向が揃つた状態で整列されているので、保管、移送、及
び次の工程での取扱いが容易になる。第3図〜第5図は
例えば特公昭46−35215号公報に開示されている
もので、第2図に示す状態の半導体ペレツト5を利用し
て半導体装置を組立てる方法の一例を示すものであり、
この方法に於いては、まず第3図に示す如く半導体ペレ
ツトを装着する支持基板6上に未硬化または半硬化のエ
ポキシ樹脂7を塗布しておき、こXに接着シート1に貼
り付けられた半導体ペレツト5を対向させる。1 and 2 show the most common method of dividing a semiconductor wafer into semiconductor pellets by using a stretchable adhesive sheet. In this method, first, as shown in FIG. 1, a semiconductor wafer is placed on an adhesive sheet 1 called a masking sheet or electron tape.
・Paste 2 and form the cut groove 3 with a scniving,
Further, by bending and pressing with a rubber roller, fractured surfaces 4 are formed along the kerfs 3 to form individual semiconductor pellets 5. Thereafter, the adhesive sheet is stretched in all directions by an appropriate method, and the semiconductor pellets 5 are arranged at intervals as shown in FIG. In this state, the semiconductor pellets are aligned in the same direction, making them easy to store, transport, and handle in the next process. 3 to 5 are disclosed, for example, in Japanese Patent Publication No. 46-35215, and show an example of a method for assembling a semiconductor device using semiconductor pellets 5 in the state shown in FIG. ,
In this method, as shown in FIG. 3, an uncured or semi-cured epoxy resin 7 is first applied onto a support substrate 6 on which semiconductor pellets are to be attached, and then an adhesive sheet 1 is pasted onto this. The semiconductor pellets 5 are made to face each other.
次に第4図に示す如く押圧棒8で接着シート1の上から
半導体ペレツト5を押し下げ、基板6に半導体ペレツト
5をエポキシ樹脂7で接着する。これにより、接着シー
ト1と半導体ペレツト5との接着力よりも半導体ペレツ
ト5と基板6との接着力が大きくなり、第5図に示す如
く押圧棒8を接着シート1から離らかし更に必要に応じ
て接着シート1と基板6との間隔を広げれば、接着シー
ト1から半導体ペレツト5が剥離する。上述の如き方法
は、半導体ペレツトの方向及び表裏の判別、更に整列作
業等が不要であるので能率的に且つ正確に半導体ペレツ
トを装着することが出来るという長所を有している反面
、次のような欠点がある。(a)半導体ペレツト5と基
板6との接着力が半導体ペレツト5と接着シート1との
接着力より大きくなるように調整しなければならず、多
岐に渡る慎重な配慮が要求され、例え充分に配慮したと
しても接着力のバラツキは避けられず、半導体ペレツト
5が接着シート1から円滑に剥離せず、接着シートに接
着されたまま持ち上げられたり、所定位置からずれた基
板上に装着されることがある。Next, as shown in FIG. 4, the semiconductor pellet 5 is pressed down from above the adhesive sheet 1 with a pressing rod 8, and the semiconductor pellet 5 is bonded to the substrate 6 with the epoxy resin 7. As a result, the adhesive force between the semiconductor pellet 5 and the substrate 6 becomes greater than the adhesive force between the adhesive sheet 1 and the semiconductor pellet 5, and the pressing rod 8 is separated from the adhesive sheet 1 as shown in FIG. If the distance between the adhesive sheet 1 and the substrate 6 is widened accordingly, the semiconductor pellet 5 will be peeled off from the adhesive sheet 1. The method described above has the advantage of being able to efficiently and accurately mount semiconductor pellets because it does not require the orientation of the semiconductor pellets, the front or back of the semiconductor pellets, or the alignment work. There are some drawbacks. (a) The adhesive force between the semiconductor pellet 5 and the substrate 6 must be adjusted so that it is greater than the adhesive force between the semiconductor pellet 5 and the adhesive sheet 1, and a wide range of careful considerations are required. Even if this consideration is taken, variations in adhesive strength are unavoidable, and the semiconductor pellets 5 may not be peeled off smoothly from the adhesive sheet 1, and may be lifted while being adhered to the adhesive sheet, or may be mounted on a substrate shifted from a predetermined position. There is.
(b)基板を加熱する必要があるとき、この熱によつて
接着シートが軟化し伸縮性を失つて不都合が生じること
がある。(b) When it is necessary to heat the substrate, the heat may cause the adhesive sheet to soften and lose its elasticity, causing problems.
故に接着シートが一定温度以上に加熱されないように加
熱温度、加熱方法、半導体ペレツトを押圧棒で押し下げ
ておく時間等に特別な配慮が要求される。今、エポキシ
樹脂7で基板6に半導体ペレツト5を接着して接着シー
ト1から半導体ペレツト5を剥離する場合に付いて述ぺ
たが、これに類似した方法例えば特開昭47−2427
1号公報に開示されているような7リツプチツプのバン
プを接続導体に密着させて接着シートからフリツプチツ
プを剥離する方法にも同様な欠点がある。Therefore, in order to prevent the adhesive sheet from being heated above a certain temperature, special considerations are required regarding the heating temperature, heating method, time for pressing down the semiconductor pellet with a pressing rod, etc. The case where the semiconductor pellet 5 is bonded to the substrate 6 with the epoxy resin 7 and then peeled off from the adhesive sheet 1 has been described above, but a similar method may be used, for example, in JP-A No. 47-2427.
The method disclosed in Japanese Patent Application No. 1, in which the bumps of a 7-lip chip are brought into close contact with a connecting conductor and the flip chip is peeled off from an adhesive sheet has similar drawbacks.
また特公昭45−4145号公報、特公昭48−361
10号公報、及び特開昭49−124970号公報等に
は押圧で接着シートを突上げて半導体ペレットを剥離し
易い状態とし、真空吸引チヤツク(ピンセツト)で半導
体ペレツトを吸着する方法が開示されているが、このよ
うな方法に於いては真空吸引チヤツクによる作業工程が
増えるという欠点、及び半導体ペレツトが7リツプチツ
プである場合には上下方向を反転させなければならない
という欠点がある。そこで、本発明は上述の如き欠点を
解決した半導体装置の製造方法を提供することを目的と
するものである。Also, Special Publication No. 45-4145, Special Publication No. 48-361
No. 10 and Japanese Unexamined Patent Publication No. 49-124970 disclose a method in which an adhesive sheet is pushed up by pressure to make the semiconductor pellet easier to peel off, and the semiconductor pellet is adsorbed with a vacuum suction chuck (tweezers). However, this method has the disadvantage that the number of work steps using a vacuum suction chuck is increased, and when the semiconductor pellet is a 7-lip chip, the semiconductor pellet must be turned upside down. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that solves the above-mentioned drawbacks.
即ち、本発明は、接着シートに半導体ペレツトを剥離可
能に接着する工程と、前記半導体ペレツトの接着シート
側主表面との反対側の主表面(本文に於いては電極部分
も主表面の一部とする)が前記半導体ペレツトを載置さ
せるための載置部に近接又は接触している状態とする工
程と、前記半導体ペレツトの前記接着シート側主表面に
対して略垂直となるように配された針体が前記接着シー
トを貫通した状態とし更に前記針体の先端で前記半導体
ベレツトの前記接着シート側主表面を押圧して前記接着
シートから前記半導体ペレツトを剥離する工程と、前記
剥離後に前記針体と前記半導体ペレツト及び前記接着シ
ートとを離間させる工程とを含んで半導体装置を製造す
ることを特徴とする半導体装置の製造方法に係わるもの
であり、半導体ペレツトの接着シートからの剥離及びペ
レツト載置部への半導体ペレツトの載置を容易且つ正確
に達成出来る方法に係わるものである。以下図面を参照
して本発明の実施例に係わる半導体装置の製造方法に付
いて述べる。That is, the present invention includes a step of releasably adhering a semiconductor pellet to an adhesive sheet, and a step of adhering a semiconductor pellet to the main surface of the semiconductor pellet on the side opposite to the main surface on the adhesive sheet side (in the main text, the electrode portion is also a part of the main surface). ) is in close proximity to or in contact with a placing portion for placing the semiconductor pellet, and the semiconductor pellet is arranged substantially perpendicular to the main surface of the adhesive sheet side of the semiconductor pellet. a step in which the needle body penetrates the adhesive sheet, and further presses the main surface of the semiconductor pellet on the adhesive sheet side with the tip of the needle body to peel the semiconductor pellet from the adhesive sheet; The present invention relates to a method for manufacturing a semiconductor device, which includes a step of separating a needle from the semiconductor pellet and the adhesive sheet, and includes peeling the semiconductor pellet from the adhesive sheet and separating the semiconductor pellet from the adhesive sheet. The present invention relates to a method for easily and accurately placing semiconductor pellets on a placing section. A method of manufacturing a semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings.
第6図〜第11図は7リツプチツプの基板上へのフエス
ダウンボンデイングに本発明を適用した実施例を工程順
に示すものである。FIGS. 6 to 11 show, in order of process, an embodiment in which the present invention is applied to face-down bonding on a substrate of a 7-lip chip.
この方法に於いては、まず第6図に示す接着シート11
に半導体ペレツト即ちフリツプチツプ12が接続されて
いるものを用意する。これは第1図及び第2図で説明し
た方法と同様な方法で形成することが出来る。接着シー
ト11には透明で片面接着性の塩化ビニール樹脂薄膜例
えばツカサ商会から販売されているマスキングシートあ
るいはエレクトロンテープ(商品名)と呼ばれるものが
適する。この接着シート11は環状枠体13に止具14
で固定されている。フリツプチツブ12はバンプ電極1
5を有し、バンプ電極15を含む主表面16が下側とな
るように接着されている。接着シート11に接着されて
いる別の主表面17はフリツプチツプがブレーナ構造と
なつているため、不活性面となつている。尚このフリツ
ブチツブ12は1×1X0.3m即ち1wm角で且つバ
ンプ電極15を含む全厚みが0.3!mになるように形
成されている。バンプ電極15は銅などの金属層を土台
としてその上に半田を盛上げた構造のものである。製造
装置が概略的に示されている第6図に於いて、接着シー
ト11を保持する枠体13は移動機構(図示せず)によ
つて上下方向に移動自在である。In this method, first, an adhesive sheet 11 shown in FIG.
A semiconductor pellet, ie, a flip chip 12, is connected to the semiconductor pellet. This can be formed by a method similar to that described in FIGS. 1 and 2. As the adhesive sheet 11, a transparent, single-sided adhesive vinyl chloride resin thin film, such as a masking sheet sold by Tsukasa Shokai Co., Ltd., or one called Electron Tape (trade name) is suitable. This adhesive sheet 11 is attached to the annular frame 13 with a stopper 14.
is fixed. The flip chip 12 is the bump electrode 1
5, and is bonded so that the main surface 16 including the bump electrode 15 is on the lower side. The other main surface 17, which is adhered to the adhesive sheet 11, is an inert surface because the flip chip has a brainer structure. Furthermore, this fringe tip 12 has a size of 1×1×0.3 m, that is, 1 wm square, and has a total thickness of 0.3 including the bump electrode 15! It is formed to be m. The bump electrode 15 has a structure in which a metal layer such as copper is used as a base and solder is applied thereon. In FIG. 6, which schematically shows the manufacturing apparatus, the frame 13 holding the adhesive sheet 11 is vertically movable by a moving mechanism (not shown).
尚この枠体13の下方向への移動はストツパ18で制限
され、上方向への移動範囲は針体19との関係で決定さ
れている。針体19は接着シート11を貫通させて7リ
ツブチツプ12の一方の主表面17を直接押圧するもの
であつて、その先端径が20〜100μm先端角が10
〜30先、根本径0.3〜1−のものが適する。Note that the downward movement of the frame 13 is restricted by a stopper 18, and the upward movement range is determined by the relationship with the needle body 19. The needle body 19 penetrates the adhesive sheet 11 and directly presses one main surface 17 of the seven-ribbon chip 12, and has a tip diameter of 20 to 100 μm and a tip angle of 10 μm.
~30 points and a root diameter of 0.3~1- are suitable.
この針体19はバ不26を介して支持体27に取付け
られており、また図示されていない移動機構によつて上
下方向に移動自在である。バネ26は針体19に下方向
の偏倚力を常に付与しているが、支持体27に設けられ
ているストツパ27aによつて下方向への移動が制限さ
れている。20は保持台であつて、フリツプチツプ12
を装置するための基板21を保持するものである。This needle body 19 is attached to a support body 27 via a lever 26, and is movable vertically by a moving mechanism (not shown). The spring 26 always applies a downward biasing force to the needle body 19, but its downward movement is restricted by a stopper 27a provided on the support body 27. 20 is a holding stand, and flip chip 12
It holds a substrate 21 for mounting the device.
この保持台20は実例に於いては上下動しないように構
成されているが、上下動するように構成しても差支えな
い。基板21は混成集積回路装置を形成するためのもの
であつて、セラミツク板21a上に配線導体22が所定
のパターンに形成されたものである。この実施例では配
線導体22が第7図に詳細に示す如くAg−Pd系厚膜
導体23と半田層24と半田用フラツクス25とから成
る。第6図に示すような準備が終了したら、次に第8図
に示す如く枠体13をストツパ18に衝合するまで下降
させ、接着シート11と配線導体22との間隔を約1r
mとする。この間隔はフリツプチツブ12の厚みの約2
倍以上であることが望ましい。これは既に基板21に装
着されたフリツプチツプ(図示せず)と接着シート11
にまだ接着されているフリツプチツブ12とを接触させ
ない状態で作業を進めるために都合が良いからである。
しかし、この間隔があまり大きいと顕微鏡等によるフリ
ツプチツプ12の配線導体22に対する位置合せ作業が
困難となるので、最大2rm位に制限することが望まし
い。配線導体22に対するフリツブチツブ12の位置合
せは、第8図の状態で枠体13とストツパ18を水平方
向に移動することによつて行う。位置合せが終了したら
、針体19を下降させて装着すべきフリツプチツプ12
の主表面1rの略中央に対応した接着シート11上に針
体19の先端19aを当て、更に針体19を下降させる
ことにより接着シート11を第9図に示す如く弾性的に
伸張させてフリツプチツプ12を押し下げる。Although this holding stand 20 is configured not to move up and down in the example, it may be configured to move up and down. The substrate 21 is for forming a hybrid integrated circuit device, and has wiring conductors 22 formed in a predetermined pattern on a ceramic board 21a. In this embodiment, the wiring conductor 22 is composed of an Ag--Pd thick film conductor 23, a solder layer 24, and a solder flux 25, as shown in detail in FIG. When the preparations shown in FIG. 6 are completed, the frame body 13 is lowered until it abuts against the stopper 18 as shown in FIG.
Let it be m. This interval is approximately 2 times the thickness of the flip tip 12.
It is desirable that it be at least twice as large. This includes the flip chip (not shown) already attached to the substrate 21 and the adhesive sheet 11.
This is because it is convenient to proceed with the work without contacting the flip chip 12 which is still adhered to the flip chip 12.
However, if this distance is too large, it becomes difficult to align the flip chip 12 with the wiring conductor 22 using a microscope or the like, so it is desirable to limit the distance to about 2 rm at maximum. The positioning of the flip-tip 12 with respect to the wiring conductor 22 is performed by moving the frame 13 and the stopper 18 in the horizontal direction in the state shown in FIG. When the alignment is completed, the needle body 19 is lowered to attach the flip chip 12.
The tip 19a of the needle body 19 is placed on the adhesive sheet 11 corresponding to the approximate center of the main surface 1r of the main surface 1r, and by further lowering the needle body 19, the adhesive sheet 11 is elastically stretched as shown in FIG. Press down on 12.
通常はこの針体19の下降によりフリツプチツブのバン
ブ電極15が配線導体22に接触出来るように枠体13
の位置が設定されているが、もしバンプ電極15が接触
出来ない場合にはストツパ18の微調整又は保持台20
を微調整してバンプ電極15が配線導体22に接触した
状態にする。針体09による7リツプチツプ12の押圧
はバンプ電極15が配線導体22に軽く押し付けられる
程度でよい。接着シート11を介して7リツプチツプ1
2を針体19で押圧した状態に於いてはバネ26が圧縮
され、このバネ26によつて押圧力が付与される。上述
のバンプ電極15を配線導体22に接触させた第9図の
状態では第7図に示す如く配線導体の最上層がフラツク
ス25であるので、このフラツクス25の接着力によつ
てフリツブチツプ12が軽く保持されている。Normally, the frame body 13 is moved so that the bump electrode 15 of the flip-chip can come into contact with the wiring conductor 22 by lowering the needle body 19.
However, if the bump electrode 15 cannot be contacted, fine adjustment of the stopper 18 or holding base 20 is required.
is finely adjusted so that the bump electrode 15 is in contact with the wiring conductor 22. The pressure on the seven-lip chip 12 by the needle body 09 may be such that the bump electrode 15 is lightly pressed against the wiring conductor 22. 7 lip chips 1 via adhesive sheet 11
2 is pressed by the needle body 19, the spring 26 is compressed, and a pressing force is applied by the spring 26. In the state shown in FIG. 9 in which the bump electrode 15 mentioned above is in contact with the wiring conductor 22, the top layer of the wiring conductor is the flux 25 as shown in FIG. Retained.
またこの状態では針体19が接着シート11を貫通する
までには至つていない。勿論この状態で貫通していても
差支えないフリツプチツプ12の配線導体22上への載
置が終了したら次に第10図に示す如く枠体13及び接
着シート11を上昇させる。Further, in this state, the needle body 19 has not yet penetrated the adhesive sheet 11. After the flip chip 12, which may penetrate through the wiring conductor 22 in this state, has been placed on the wiring conductor 22, the frame 13 and the adhesive sheet 11 are raised as shown in FIG.
即ち、針体19と基板21とは実質的に固定した状態換
言すれば針体19ど基板21との間隔を実質上固定した
状態で、基板21と接着シート11との間隔を約0.3
調から3〜15rvnに広げるように枠体13を上昇さ
せる。上述の如く針体19を固定して接着シート11を
針体の先端19aから根本の方に向つて移動すれば、針
体19が接着シート11を貫通した状態となる。また接
着シート11を上方向に移動すれば、これに接着されて
いる7リツプチツブ12も上方向に移動しようとする。
しかし、接着シート11を貫通した針体の先端19aに
よつて7リツプチツプ12の上方向への移動に制限され
、針体の先端19aで主表面17が押圧された状態とな
り、主表面1rから接着シート11が剥離し、接着シー
ト11のみが枠体13と共に上昇する。この時接着シー
ト11の上昇に伴なつて針体19にも上方向の力が作用
するが、バネ26はこれに打ち勝つ強さになつているの
で、針体19は上方向に殆んど移動しない。第10図に
示す如く針体19が接着シート11を貫通すれば、第9
図と同様に再びバネ26の偏倚力によつて針体19が下
方に押され、これによりフリツプチツブ12が針体19
で押圧される。7リツブチツプ12の剥離及び基板上へ
の載置が終了したら次に、針体19を第11図に示す如
く上方向に移動し、フリツプチツプ12から離間させる
と共に接着シート11から抜き取る。That is, the needle body 19 and the substrate 21 are substantially fixed. In other words, the distance between the needle body 19 and the substrate 21 is substantially fixed, and the distance between the substrate 21 and the adhesive sheet 11 is approximately 0.3.
The frame body 13 is raised so as to expand from the key to 3 to 15 rvn. If the needle body 19 is fixed as described above and the adhesive sheet 11 is moved from the tip 19a of the needle body toward the base, the needle body 19 will be in a state where it penetrates the adhesive sheet 11. Furthermore, if the adhesive sheet 11 is moved upward, the 7-lip chip 12 bonded thereto also tends to move upward.
However, the upward movement of the 7 lip chip 12 is restricted by the tip 19a of the needle that penetrates the adhesive sheet 11, and the main surface 17 is pressed by the tip 19a of the needle. The sheet 11 is peeled off, and only the adhesive sheet 11 rises together with the frame 13. At this time, an upward force is applied to the needle body 19 as the adhesive sheet 11 rises, but since the spring 26 is strong enough to overcome this force, the needle body 19 hardly moves upward. do not. If the needle body 19 penetrates the adhesive sheet 11 as shown in FIG.
As shown in the figure, the needle body 19 is again pushed downward by the biasing force of the spring 26, thereby causing the flip-tip 12 to move against the needle body 19.
Pressed by After peeling off the seven-rib chip 12 and placing it on the substrate, the needle body 19 is moved upward as shown in FIG.
これにより、接着シート11に空28が生じるが残りの
フリツプチツプを装着するときの障害にはならない。フ
リツブチツプ12は針体19で押圧されていなくともフ
ラツクス25の粘着力によつて仮りの固定がされた状態
に保たれる。針体19を接着シート11から抜き取ると
、接着シート11はその伸縮性によつて第6図に示すよ
うに枠体に張り詰められた平面的な状態に復帰する。第
10図で上昇させた枠体13は次のフリツプチツブ装着
のためにストツパ18で制限されるまで下降させる。勿
論、枠体13を第11図に示す如く下降させた後に針体
19を接着シート11から抜き取つてもよい。一枚の基
板21に複数のフリツプチツプ12をボンデイングする
ときには、以上のような操作を繰り返して必要数の7リ
ツプチツプを基板上に載置した後に基板をリフロー炉と
呼ばれる電気炉の中を通過させて、バンブ電極15及び
配線導体22の半田をリフロー(再容融)させて7リツ
プチツプ12を基板21に接着する。Although this creates a void 28 in the adhesive sheet 11, it does not become an obstacle when attaching the remaining flip chips. Even if the flip tip 12 is not pressed by the needle body 19, it is maintained in a temporarily fixed state by the adhesive force of the flux 25. When the needle body 19 is removed from the adhesive sheet 11, the adhesive sheet 11 returns to its flat state in which it is stretched around the frame as shown in FIG. 6 due to its elasticity. The frame 13 raised in FIG. 10 is lowered until it is limited by the stopper 18 for the next flip chip installation. Of course, the needle body 19 may be removed from the adhesive sheet 11 after the frame body 13 is lowered as shown in FIG. When bonding a plurality of flip chips 12 to a single board 21, the above operations are repeated to place the required number of 7 flip chips on the board, and then the board is passed through an electric furnace called a reflow oven. , the solder of the bump electrodes 15 and the wiring conductors 22 is reflowed (remelted) to bond the 7-lip chip 12 to the substrate 21.
上述の実施例の方法には次のような利点がある。The method of the embodiment described above has the following advantages.
(a)ペレツト即ちフリツプチツプ12を針体19によ
り接着シート11から強制的に剥離させるので、7リツ
ブチツプ12と接着シート11及びフリツプチツプ12
と基板21との接着力の大小関係を配慮する必要がない
。即ち、7リップチツプ12と基板21との接着力は非
常に小さくてもかまわないし、フリツブチツプを基板上
に載置するだけでこれらの間に接着力が働かないときで
も実施可能である。また7リツプチツプと接着シートと
の接着力のバラツキに対しても許容範囲が大きいので、
接着シートの粘着剤の選択などが楽である。(5)基板
21の平面度、及び基板21と接着シート11又はチツ
プ12との平行度に対する制約が少ない。(a) Since the pellet, that is, the flip chip 12 is forcibly peeled off from the adhesive sheet 11 by the needle body 19, the 7-rib chip 12, the adhesive sheet 11, and the flip chip 12 are separated from each other.
There is no need to consider the magnitude of the adhesive force between the substrate 21 and the substrate 21. That is, the adhesive force between the 7-lip chip 12 and the substrate 21 may be very small, and it is also possible to carry out the method even when the flip chip is simply placed on the substrate and no adhesive force acts between them. In addition, there is a large tolerance for variations in the adhesive strength between the 7-lip chip and the adhesive sheet, so
It is easy to select the adhesive for the adhesive sheet. (5) There are fewer restrictions on the flatness of the substrate 21 and the parallelism between the substrate 21 and the adhesive sheet 11 or chip 12.
即ち、針体19で伸縮性のある接着シート11の上から
チツプ12を押圧するので、基板21が多少傾斜してい
てもチツプ12はその傾斜に適合して傾くことが出来る
。(c)基板21を加熱する必要があるときでも、加熱
温度、加熱方法などに対する制約が少ない。That is, since the needle body 19 presses the tip 12 from above the stretchable adhesive sheet 11, even if the substrate 21 is slightly inclined, the tip 12 can be inclined to match the inclination. (c) Even when it is necessary to heat the substrate 21, there are fewer restrictions on the heating temperature, heating method, etc.
即ちチツブ12が接着シート11から剥離して針体19
によつてチツブが基板に接触させられている状態(第1
0図の状態)で基板を加熱したとしても、接着シート1
1に接着したまX針体によつて基板に接触させられてい
る状態即ち第9図の接着シートが基板の熱の影響をもつ
とも受け易い状態の時間を長くする必要がまつたくない
ので、熱の悪影響を最小限に抑えることが出来る。勿論
チツプと基板との接着力が小さくてもよいことから、基
板を加熱するにしても従来より低温の加熱でよいことが
多い。またチツプを基板にクランプする工程と、このチ
ツブを基板に強固にポンデイングするための加熱工程と
を分離して行なうことが可能であり、この方法をとれば
加熱に対する制約は実質上解除される。(6)以上のこ
とから、接着シートに接着されたチツブを確実且つ容易
に基板に装着することができる。That is, the tip 12 is peeled off from the adhesive sheet 11 and the needle body 19
state in which the tip is brought into contact with the substrate (first
Even if the substrate is heated in the state shown in Figure 0), the adhesive sheet 1
Since it is unnecessary to prolong the period in which the adhesive sheet is in contact with the substrate by the X needle while being adhered to the substrate 1, that is, in a state where the adhesive sheet shown in FIG. 9 is easily affected by the heat of the substrate, The negative effects of this can be minimized. Of course, since the adhesive force between the chip and the substrate may be small, it is often sufficient to heat the substrate at a lower temperature than in the past. Furthermore, the step of clamping the chip to the substrate and the heating step of firmly bonding the chip to the substrate can be performed separately, and by using this method, restrictions on heating are substantially lifted. (6) From the above, the chip adhered to the adhesive sheet can be reliably and easily attached to the substrate.
(6) またこの実施例では針体19にバネ26で偏倚
力を付与しているので、移動機構による針体19の下降
量が所望値より大きくなつた場合にはバネ26によつて
これが吸収されフリツプチツブ12を破壊から防ぐ。(6) In addition, in this embodiment, the biasing force is applied to the needle body 19 by the spring 26, so if the amount of descent of the needle body 19 by the moving mechanism becomes larger than the desired value, this is absorbed by the spring 26. This prevents the flip tip 12 from being destroyed.
以上本発明の1実施例に付いて述ぺたが、本発明はこの
実施例に限定されるものではなく、更に変形可能なもの
である。Although one embodiment of the present invention has been described above, the present invention is not limited to this embodiment and can be further modified.
例えば、第9図に示す工程に於いて、針体19を下降さ
せる代りに基板21を保持台20で上昇させてフリツプ
チツブ12を基板21に接触させると共に、針体19が
接着シート11を介してフリツプチツプ12を押圧する
ようにしてもよい。また第10図の工程に於いて、接着
シート11を上昇させる代りに針体19と基板21とを
下降させるようにしてもよい。For example, in the step shown in FIG. 9, instead of lowering the needle body 19, the substrate 21 is raised on the holding table 20 to bring the flip chip 12 into contact with the substrate 21, and the needle body 19 is moved through the adhesive sheet 11. Alternatively, the flip chip 12 may be pressed. Further, in the step shown in FIG. 10, the needle body 19 and the substrate 21 may be lowered instead of raising the adhesive sheet 11.
また針体19にバ不26による偏倚力を付与せずに、移
動機構のみによつて移動するようにしてもよい。Further, the needle body 19 may be moved only by the moving mechanism without applying the biasing force by the bar 26.
このような場合、接着シート11からチツブ12が剥離
した後針体19がチツプ12に追従して下降しないが、
チツプ12の下降量は接着シート11の厚み以下である
ので、実際上問題が生じない。また第10図の工程に於
いて針体19の上方向への移動を阻止するストツパを設
け、接着シート11を第10図に示す如く上昇させると
きのみこのストツパを働かして接着シート11の上方向
への移動によつて針体19が上方向に追従して移動しよ
うとすることを阻止してもよい。In such a case, after the tip 12 is peeled off from the adhesive sheet 11, the needle body 19 will not follow the tip 12 and descend;
Since the amount of descent of the chip 12 is less than the thickness of the adhesive sheet 11, no problem arises in practice. Further, in the process shown in FIG. 10, a stopper is provided to prevent the needle body 19 from moving upward, and this stopper is activated only when the adhesive sheet 11 is raised as shown in FIG. It may be possible to prevent the needle body 19 from following the upward movement by moving to .
また7リツプチツブ12を接着シート11に接着したも
のを第1図及び第2図に示すような方法で得ることなく
、即ち伸張工程を設けずに接着シート11にフリツプチ
ツプ12を単に接着するのみで得てもよい。Furthermore, it is possible to obtain a product by simply bonding the flip chips 12 to the adhesive sheet 11 without using the method shown in FIGS. It's okay.
また接着シートに対するペレツトの接着は接着剤による
接着に限ることなく、静電的接着又はその他の接着であ
つてもよい。Further, the adhesion of the pellets to the adhesive sheet is not limited to adhesion using an adhesive, and may be electrostatic adhesion or other adhesion.
また針体19は一本に限らず、1つのペレツトに対して
複数本であつてもよい。Further, the number of needle bodies 19 is not limited to one, but may be a plurality of needles for one pellet.
針体を複数本にする場合は安定的押圧の点から3本が望
ましい。また針体19の先端形状は単に所定の曲率半径
を有する一般的な針の先端形状のもので差支えないが、
例えば十形の先端形状として複数本の針体による押圧と
同様な効果が得られるようにしてもよい。またフリツプ
チツブの装着のみならず、―般のダイオード、トランジ
スタ等の半導体ペレツトのダイボンデイングにも適用可
能である。When using a plurality of needle bodies, it is preferable to use three needle bodies from the viewpoint of stable pressing. Further, the tip shape of the needle body 19 may simply be a general needle tip shape having a predetermined radius of curvature;
For example, the tip may have a ten-shaped tip shape so that the same effect as pressing by a plurality of needle bodies can be obtained. Moreover, it is applicable not only to attaching flip chips but also to die bonding of semiconductor pellets such as general diodes and transistors.
また基板21の代りに配線導体22のない絶縁基板又は
金属基板、又はリード電極を兼ねた金属板等であつても
よい。Further, the substrate 21 may be replaced by an insulating substrate or a metal substrate without the wiring conductor 22, or a metal plate that also serves as a lead electrode.
要するに本発明に於ける載置部はどのようなものでもよ
い。従つてポンデイング工程に限らず、別の工程にも適
用出来る。例えば、接着シートから半導体ペレツトを剥
離して配列させるのみの工程にも適用出来る。このよう
な場合に於いては、実施例に於ける基板21の部分が半
導体ペレツトの載置板即ち配列板となる。また実施例で
は接着シート11からチツブ12を剥離する際にチツプ
12を基板20に接触させた状態で行つているが、チツ
プ12を基板21に近接させた状態即ち第9図に於いて
バンプ電極15が配線導体22から離間している状態で
接着シート11を上昇させるか針体19を下降させるか
して針体19が接着シートを貫通した状態とし、更に針
体19でチツプの主表面17を直接押圧してチツプ12
を接着シート11から剥離してもよい。この場合剥離後
、チツプ12が自重で落下するがその落下距離は微少で
あるので問題が生じない以上述べた幾つかの変形例に於
いても前述の実施例とほぼ同様な効果を得ることが出来
る。In short, any type of mounting section may be used in the present invention. Therefore, it can be applied not only to the ponding process but also to other processes. For example, it can be applied to a process where semiconductor pellets are simply peeled off and arranged from an adhesive sheet. In such a case, the substrate 21 in the embodiment serves as a mounting plate or arrangement plate for the semiconductor pellets. Further, in the embodiment, when peeling the chip 12 from the adhesive sheet 11, the chip 12 is peeled off with the chip 12 in contact with the substrate 20, but when the chip 12 is peeled off from the adhesive sheet 11, the bump electrode 15 is separated from the wiring conductor 22, the adhesive sheet 11 is raised or the needle body 19 is lowered so that the needle body 19 penetrates the adhesive sheet, and then the needle body 19 penetrates the main surface 17 of the chip. Press directly to insert tip 12.
may be peeled off from the adhesive sheet 11. In this case, after peeling, the chip 12 falls under its own weight, but the distance it falls is so small that no problem occurs.Also, in the several modifications described above, it is possible to obtain almost the same effect as the above-mentioned embodiment. I can do it.
第1図は半導体ウエ・゛を半導体ペレツトに分割した状
態を示す側面図、第2図は第1図の接着シートを伸張し
た状態を示す説明的側面図、第3図,第4図、及び第5
図は従来の半導体ペレツト装着法を工程順に示す側面図
、第6図,第r図,第8図,第9図,第10図及び第1
1図は本発明の1実施例に係わる7リツプチツプの装着
方法を工程順に示す一部縦断面図である。
尚図面に用いられている符号に於いて、11は接着シー
ト、12は7リツプチツプ、13は枠体、15はバンブ
電極、16,17は主表面、18はストツパ、19は針
体、20は保持台、21は基板、22は配線導体である
。FIG. 1 is a side view showing a state in which a semiconductor wafer is divided into semiconductor pellets, FIG. 2 is an explanatory side view showing a state in which the adhesive sheet shown in FIG. 1 is stretched, and FIGS. Fifth
The figures are side views showing the conventional semiconductor pellet mounting method in the order of steps;
FIG. 1 is a partial longitudinal cross-sectional view showing a method for installing a seven-lip chip according to an embodiment of the present invention in the order of steps. In the symbols used in the drawings, 11 is an adhesive sheet, 12 is a 7-lip chip, 13 is a frame, 15 is a bump electrode, 16 and 17 are main surfaces, 18 is a stopper, 19 is a needle body, and 20 is a A holding stand, 21 a substrate, and 22 a wiring conductor.
Claims (1)
工程と、前記半導体ペレットの接着シート側主表面との
反対側の主表面が前記半導体ペレットを載置させるため
の載置部に近接又は接触している状態とする工程と、前
記半導体ペレットの前記接着シート側主表面に対して略
垂直となるように配された針体が前記接着シートを貫通
した状態とし更に前記針体の先端で前記接着シート側主
表面を押圧して前記接着シートから前記半導体ペレット
を剥離する工程と、前記剥離後に前記針体と前記半導体
ペレット及び前記接着シートとを離間させる工程とを含
んで半導体装置を製造することを特徴とする半導体装置
の製造方法。 2 前記半導体ペレットが、フリップチップ形式の半導
体素子である特許請求の範囲第1項記載の半導体装置の
製造方法。 3 前記載置部が、前記半導体ペレットの接続導体であ
る特許請求の範囲第1項又は第2項記載の半導体装置の
製造方法。 4 前記接続導体が、半田接着用のフラックスがその上
に塗布された半田層を有する導体である特許請求の範囲
第3項記載の半導体装置の製造方法。 5 前記載置部が、金属基板又は絶縁基板から成る前記
半導体ペレットの固着部である特許請求の範囲第1項記
載の半導体装置の製造方法。 6 前記半導体ペレットを剥離する工程が、前記針体と
前記載置部との間隔を実質上一定に保つて前記接着シー
トを前記載置部から遠ざかる方向に移動することにより
前記針体が前記接着シートを貫通した状態とし更に前記
針体の先端で前記半導体ペレットの前記接着シート側主
表面を押圧して前記接着シートから前記半導体ペレット
を剥離する工程である特許請求の範囲第1項記載の半導
体装置の製造方法。 7 前記半導体ペレットを剥離する工程が、前記針体と
前記載置部との間隔を実質上一定に保つて前記載置部及
び前記針体の先端を前記接着シートから遠ざかる方向に
移動することにより前記針体が前記接着シートを貫通し
た状態とし更に前記針体の先端で前記半導体ペレットの
前記接着シート側主表面を押圧して前記接着シートから
前記半導体ペレットを剥離する工程である特許請求の範
囲第1項記載の半導体装置の製造方法。 8 前記半導体ペレットの接着シート側主表面との反対
側の主表面が前記半導体ペレットを載置させるための載
置部に近接又は接触している状態とする工程が、前記針
体で前記接着シートを介して前記半導体ペレットを押圧
して前記半導体ペレットの主表面を前記載置部に近接又
は接触させる工程である特許請求の範囲第1項記載の半
導体装置の製造方法。[Scope of Claims] 1. A step of releasably adhering a semiconductor pellet to an adhesive sheet, and a mounting portion on which the main surface of the semiconductor pellet on the side opposite to the main surface on the adhesive sheet side is on which the semiconductor pellet is placed. a state in which a needle body arranged substantially perpendicular to the main surface of the semiconductor pellet on the adhesive sheet side penetrates the adhesive sheet; a step of peeling the semiconductor pellet from the adhesive sheet by pressing the main surface on the side of the adhesive sheet with a tip of the semiconductor pellet, and a step of separating the needle from the semiconductor pellet and the adhesive sheet after the peeling. A method for manufacturing a semiconductor device, the method comprising manufacturing the device. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor pellet is a flip-chip type semiconductor element. 3. The method of manufacturing a semiconductor device according to claim 1 or 2, wherein the mounting portion is a connecting conductor for the semiconductor pellet. 4. The method of manufacturing a semiconductor device according to claim 3, wherein the connecting conductor is a conductor having a solder layer on which flux for solder bonding is applied. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the placing part is a part to which the semiconductor pellet is fixed, which is made of a metal substrate or an insulating substrate. 6. The step of peeling off the semiconductor pellet is performed by moving the adhesive sheet in a direction away from the placement portion while keeping the distance between the needle and the placement portion substantially constant, so that the needle is removed from the adhesion. The semiconductor according to claim 1, which is a step of penetrating the sheet and further pressing the main surface of the semiconductor pellet on the adhesive sheet side with the tip of the needle body to peel the semiconductor pellet from the adhesive sheet. Method of manufacturing the device. 7. The step of peeling off the semiconductor pellet is performed by keeping the distance between the needle body and the placement part substantially constant and moving the tip of the placement part and the needle body in a direction away from the adhesive sheet. The step of peeling off the semiconductor pellet from the adhesive sheet by putting the needle through the adhesive sheet and pressing the main surface of the semiconductor pellet on the adhesive sheet side with the tip of the needle 2. A method for manufacturing a semiconductor device according to item 1. 8. The step of bringing the main surface of the semiconductor pellet opposite to the main surface on the adhesive sheet side into a state in which the main surface of the semiconductor pellet is in proximity to or in contact with the placing part for placing the semiconductor pellet is the step of placing the adhesive sheet with the needle body. 2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of pressing the semiconductor pellet through a holder so that the main surface of the semiconductor pellet approaches or contacts the mounting portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51092934A JPS5916407B2 (en) | 1976-08-04 | 1976-08-04 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51092934A JPS5916407B2 (en) | 1976-08-04 | 1976-08-04 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5318386A JPS5318386A (en) | 1978-02-20 |
| JPS5916407B2 true JPS5916407B2 (en) | 1984-04-16 |
Family
ID=14068304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51092934A Expired JPS5916407B2 (en) | 1976-08-04 | 1976-08-04 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916407B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011222639A (en) * | 2010-04-07 | 2011-11-04 | Disco Abrasive Syst Ltd | Bonding method |
-
1976
- 1976-08-04 JP JP51092934A patent/JPS5916407B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5318386A (en) | 1978-02-20 |
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