Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS5918702B2 - Electrophotographic method - Google Patents
[go: Go Back, main page]

JPS5918702B2 - Electrophotographic method - Google Patents

Electrophotographic method

Info

Publication number
JPS5918702B2
JPS5918702B2 JP49073012A JP7301274A JPS5918702B2 JP S5918702 B2 JPS5918702 B2 JP S5918702B2 JP 49073012 A JP49073012 A JP 49073012A JP 7301274 A JP7301274 A JP 7301274A JP S5918702 B2 JPS5918702 B2 JP S5918702B2
Authority
JP
Japan
Prior art keywords
layer
photoconductive
photosensitive plate
injection blocking
image light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49073012A
Other languages
Japanese (ja)
Other versions
JPS512431A (en
Inventor
勝 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP49073012A priority Critical patent/JPS5918702B2/en
Publication of JPS512431A publication Critical patent/JPS512431A/en
Publication of JPS5918702B2 publication Critical patent/JPS5918702B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrophotography Using Other Than Carlson'S Method (AREA)
  • Photoreceptors In Electrophotography (AREA)

Description

【発明の詳細な説明】 この発明は、光導電性を有する注入阻止層を備えた電子
写真感光板及びその電子写真感光板を使用した新規な電
子写真方式に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrophotographic photosensitive plate provided with an injection blocking layer having photoconductivity and a novel electrophotographic method using the electrophotographic photosensitive plate.

第1図に従来の電子写真感光板4(以下感光板と称す)
の断面構造及び通常の使用法を示す。導電性電極1、光
導電体層2、表面絶縁体層3により感光板4が構成され
ている。コロナ帯電器5による感光板4の帯電及び記録
像光6の照射は、共に表面絶縁体層3側から行われてい
る。この様な構成では、帯電と露光を同時に行う必要の
ある従来の感光板4では帯電器5の存在のため記録像源
Tを感光板4に密着させることが出来ず、光学的な損失
を生じる原因となつていた。第2図はこの問題を解決す
るため従来の感光板4の導電性電極1だけを透明導電性
電極8に置き換えて帯電器5と反対側から感光板4に記
録像光6を照射するように構成した例を示したものであ
るが、このような構成例では透明導電性電極8と光導電
体層2とが直接々触しており、かつ感光板4には表面絶
縁体層3上に電荷像を形成する際に、コロナ帯電器5に
より1000〜2000(V)程度の高電圧が実効的に
印加されているので透明導電性電極8から光導電体層2
へ多数担体の注入が記録像光6の有無に関係なく暗部で
も生じる様になる。
FIG. 1 shows a conventional electrophotographic photosensitive plate 4 (hereinafter referred to as photosensitive plate).
The cross-sectional structure and normal usage are shown. A photosensitive plate 4 is composed of a conductive electrode 1, a photoconductor layer 2, and a surface insulator layer 3. Charging of the photosensitive plate 4 by the corona charger 5 and irradiation of the recording image light 6 are both performed from the surface insulator layer 3 side. In such a configuration, in the case of a conventional photosensitive plate 4 that requires simultaneous charging and exposure, the recording image source T cannot be brought into close contact with the photosensitive plate 4 due to the presence of the charger 5, resulting in optical loss. It was the cause. In order to solve this problem, FIG. 2 shows a structure in which only the conductive electrode 1 of the conventional photosensitive plate 4 is replaced with a transparent conductive electrode 8, and recording image light 6 is irradiated onto the photosensitive plate 4 from the side opposite to the charger 5. In this example, the transparent conductive electrode 8 and the photoconductor layer 2 are in direct contact with each other, and the photosensitive plate 4 has a surface insulator layer 3 on which it is exposed. When forming a charge image, since a high voltage of about 1000 to 2000 (V) is effectively applied by the corona charger 5, the photoconductor layer 2 is
Injection of majority carriers into the recording image light 6 occurs even in dark areas, regardless of the presence or absence of the recording image light 6.

従つて暗部での注入担体は暗部のバックグランド電荷と
して表面絶縁体層3に誘起されるので、記録像のS/N
を著しく低下させる。この不都合は、透明導電性電極8
と光導電体層2とが直接々触しているために生じるもの
である。この発明はこのような欠点を除去し、記録像光
によらない表面絶縁体層3に形成される電荷像のバック
グランドを著しく減少させS/Nの良い記録像を得るこ
とを可能にした電子写真感光板及びそれを利用した電子
写真方式を提供するものである。第3図は、この発明に
よる電子写真方式において使用する感光板の基本構造図
を示したものである。
Therefore, the injected carriers in the dark area are induced in the surface insulating layer 3 as background charges in the dark area, so that the S/N of the recorded image decreases.
significantly decreases This disadvantage is caused by the transparent conductive electrode 8
This occurs because the photoconductor layer 2 and the photoconductor layer 2 are in direct contact with each other. This invention eliminates these drawbacks, significantly reduces the background of the charge image formed on the surface insulator layer 3 that is not affected by recording image light, and makes it possible to obtain a recorded image with a good S/N ratio. The present invention provides a photographic photosensitive plate and an electrophotographic method using the same. FIG. 3 shows a basic structural diagram of a photosensitive plate used in the electrophotographic method according to the present invention.

すなわち、この発明の感光体11は透明支持体9、透明
導電性電極8、光導電性注入阻止層10、光導電体層2
および、表面絶縁体層3との5層構造から成つている。
説明の便宜上、以下では表面層としてポリエチレン・テ
レフタレートから成る表面絶縁体層3を用いた場合につ
いてのみ、詳細に説明する。又、感光体11の他の各要
素についても多くの変化が可能であるが、透明支持体9
としてポリエチレンテレフタレートを、透明導電性電極
8として、ヨウ化銅、或は酸化インジウム層を、光導電
性注入阻止層10としてポリビニルカルバゾール(PV
K)を、光導電体層2としてセレンテルル合金蒸着層を
各々用いた場合について詳細に説明する。第3図の構成
を有するこの発明の電子写真感光板で最も重要な構成要
素は透明導電性電極8と光導電体層2との間に設けた光
導電性注入阻止層10である。この光導電性注入阻止層
10を設けた感光板11を用いた電子写真方式を第4図
の基本工程図により説明する。先ず第4図aにおいてコ
ロナ細線13とガード電極12とから成るマイナスコロ
ナ帯電器14を感光板11の表面絶縁体層3側に配置す
る。一方、透明支持体9側からは記録像光6が照射され
ている。ここでも、光導電性注入阻止層10は光導電体
層2Vc比して充分、多数担体濃度が少なく、暗中での
透明導電性電極8から、光導電体層2への多数担体の注
入を阻止出来る様な性質を持つ材料で作られており、こ
の実施例に使用したPVKはこの様な材料の代表例であ
る。この光導電性注入阻止層10の厚みは、トンネル効
果による透明導電性電極8から光導電体層2への多数担
体(セレン、テルル合金の場合には正孔)の注入を阻止
出来る程度の厚みである必要があり、ここでは0.1ミ
クロン以上に選んでいる。
That is, the photoreceptor 11 of the present invention includes a transparent support 9, a transparent conductive electrode 8, a photoconductive injection blocking layer 10, and a photoconductor layer 2.
It has a five-layer structure including a surface insulating layer 3 and a surface insulating layer 3.
For convenience of explanation, only the case where the surface insulating layer 3 made of polyethylene terephthalate is used as the surface layer will be described in detail below. Further, although many changes are possible for each of the other elements of the photoreceptor 11, the transparent support 9
Polyethylene terephthalate is used as the transparent conductive electrode 8, copper iodide or indium oxide layer is used as the transparent conductive electrode 8, and polyvinyl carbazole (PV) is used as the photoconductive injection blocking layer 10.
K) will be explained in detail with respect to the case where a selenium-tellurium alloy vapor deposited layer is used as the photoconductor layer 2. The most important component of the electrophotographic photosensitive plate of the present invention having the structure shown in FIG. 3 is the photoconductive injection blocking layer 10 provided between the transparent conductive electrode 8 and the photoconductor layer 2. An electrophotographic method using a photosensitive plate 11 provided with this photoconductive injection blocking layer 10 will be explained with reference to the basic process diagram of FIG. First, in FIG. 4A, a negative corona charger 14 consisting of a thin corona wire 13 and a guard electrode 12 is placed on the side of the surface insulating layer 3 of the photosensitive plate 11. On the other hand, recording image light 6 is irradiated from the transparent support 9 side. Here again, the photoconductive injection blocking layer 10 has a sufficiently low concentration of majority carriers compared to the photoconductor layer 2Vc, and prevents injection of majority carriers from the transparent conductive electrode 8 into the photoconductor layer 2 in the dark. The PVK used in this example is a typical example of such a material. The thickness of the photoconductive injection blocking layer 10 is such that it can prevent the injection of majority carriers (holes in the case of selenium and tellurium alloys) from the transparent conductive electrode 8 to the photoconductor layer 2 due to the tunnel effect. Here, it is selected to be 0.1 micron or more.

最大厚さについては特に明確な制限はなく、光導電体層
2及び表面絶縁体層3などの周囲の系との関係で決定さ
れるものであるが、製造上適当な厚みは1〜20ミクロ
ンであり、最大でも50ミクロン以下が望ましい。又、
光導電性注入阻止層10の厚みは、表面絶縁体層3の厚
みより薄くすることにより電荷保持能力のすぐれた表面
絶縁体層3の電位を大きくすることが出来、記録濃度を
主に表面絶縁体層3電位が決定する様に設計することが
出来る。この発明の実施例は全て光導電性注入阻止層1
0の厚みを表面絶縁体層3のそれより小さくした場合に
ついて示してある。説明の便宜上、図では右半分にのみ
記録像光6が照射された場合について説明する。
There is no clear limit on the maximum thickness, and it is determined in relation to the surrounding systems such as the photoconductor layer 2 and the surface insulator layer 3, but an appropriate thickness for manufacturing is 1 to 20 microns. The maximum thickness is preferably 50 microns or less. or,
By making the thickness of the photoconductive injection blocking layer 10 thinner than the thickness of the surface insulating layer 3, the potential of the surface insulating layer 3, which has excellent charge retention ability, can be increased, and the recording density is mainly controlled by the surface insulating layer. It can be designed so that the body layer 3 potential is determined. All embodiments of this invention include a photoconductive injection blocking layer 1
The case where the thickness of the surface insulating layer 3 is made smaller than that of the surface insulating layer 3 is shown. For convenience of explanation, a case will be described in which only the right half of the figure is irradiated with the recording image light 6.

今、左半分の暗部ではマイナスコロナ帯電器14からの
コロナ電界により、正孔が透明導電性電極8から光導電
体層2へ注入されるのを、光導電性注入阻止層10を介
在させることにより、完全に除去することを可能として
いる。そこで暗部は主に誘電分極成分による弱いマイナ
ス帯電を受ける一方、右半分の記録像光6の照射部では
、記録像光6により光導電体層2中に発生した自由正孔
が、表面絶縁体層3側にコロナ電界により移動し、暗部
と同じ誘電分極に加えて表面絶縁体層3上に光発生した
正孔の移動による誘導分極成分による電荷像を形成する
。コロナ電界による分極は表面絶縁体層3だけでなく、
光導電体層2及び光導電性注入阻止層10にも各々発生
している。光導電体層2の分極電荷ぱ、第4図bの様に
露光ランプ15による全面露光により除去する。
Now, in the dark area on the left half, the photoconductive injection blocking layer 10 is used to prevent holes from being injected from the transparent conductive electrode 8 into the photoconductor layer 2 due to the corona electric field from the negative corona charger 14. This makes it possible to completely remove it. Therefore, the dark area is mainly subjected to a weak negative charge due to the dielectric polarization component, while in the irradiated area of the recording image light 6 in the right half, free holes generated in the photoconductor layer 2 by the recording image light 6 are transferred to the surface insulator. It moves to the layer 3 side by the corona electric field, and in addition to the same dielectric polarization as the dark part, a charge image is formed by an induced polarization component due to the movement of photo-generated holes on the surface insulator layer 3. Polarization due to the corona electric field occurs not only in the surface insulator layer 3, but also in
They also occur in the photoconductor layer 2 and the photoconductive injection blocking layer 10, respectively. The polarized charges on the photoconductor layer 2 are removed by exposing the entire surface of the photoconductor layer 2 to light using an exposure lamp 15 as shown in FIG. 4B.

次に、c図の様に誘電記録紙18に転写ローラ19を使
つて電荷像を転写する。誘電記録紙18は低抵抗基紙1
7と誘電体層16とから成るものを代表例として示して
ある。次にd図の様に、電荷像を転写した誘電記録紙1
8は現像部20で液体トナー現像され、加熱定着工程を
経てハードコピー化が完了する。一方、感光板11には
残留電荷像が存在しており、再記録の妨げとなる。そこ
で、残留電荷像を消去するため、光導電性注入阻止層1
0側からPVKが光導電性を示す。例えば水銀放電ラン
プ21で均一照射しながら、プラスコロナ帯電器22に
より感光板11を均一帯電する。この工程により、光導
電性注入阻止10の残留電荷は完全に消去され、表面絶
縁体層3がプラスコロナ帯電器22での帯電条件により
決まる一定のプラス電位に保たれる。この際、同時に第
2露光ランプ23により表面絶縁体層3側より均一照射
を行うことにより表面絶縁体層3の一定のブラス電位へ
の平衡を促進することが出来る。この様にして、一定の
プラス電位に保たれた感光板11は、再び第4図aの工
程にもどり再記録が行われる。第3図にその断面構造を
示したこの発明の感光板11の特長を生かすためには、
記録像光6の照射方向と帯電器の極性及び光導電体層2
の伝導型との間には、一定の関係が成立していることが
必要である。
Next, as shown in Fig. c, the charge image is transferred onto the dielectric recording paper 18 using the transfer roller 19. The dielectric recording paper 18 is the low resistance base paper 1
7 and a dielectric layer 16 are shown as a representative example. Next, as shown in figure d, the dielectric recording paper 1 to which the charge image has been transferred is
8 is developed with liquid toner in the developing section 20, and completed as a hard copy through a heating and fixing process. On the other hand, a residual charge image exists on the photosensitive plate 11, which hinders re-recording. Therefore, in order to erase the residual charge image, the photoconductive injection blocking layer 1
PVK shows photoconductivity from the 0 side. For example, while uniformly irradiating the photosensitive plate 11 with a mercury discharge lamp 21, the photosensitive plate 11 is uniformly charged with a positive corona charger 22. Through this step, the residual charge on the photoconductive injection blocker 10 is completely erased, and the surface insulator layer 3 is kept at a constant positive potential determined by the charging conditions in the positive corona charger 22. At this time, by uniformly irradiating the surface insulating layer 3 from the side of the surface insulating layer 3 with the second exposure lamp 23, equilibrium of the surface insulating layer 3 to a constant brass potential can be promoted. In this way, the photosensitive plate 11 maintained at a constant positive potential returns to the process shown in FIG. 4a again to perform rerecording. In order to take advantage of the features of the photosensitive plate 11 of the present invention whose cross-sectional structure is shown in FIG.
Irradiation direction of recording image light 6, polarity of charger, and photoconductor layer 2
It is necessary that a certain relationship be established between the conduction type of

例えば、記録像光6を第4図aのように透明導電性電極
8側から照射する場合は、光導電体層2がN型の時には
透明導電性電極8がマイナスに、又光導電体層2がP型
の時には透明導電性電極2がプラスになるように各々帯
電器の極性を選定する。このような関係に選んだ時、記
録像光により発生した多数担体を能率よく利用すること
が出来る。なお光導電性注入阻止層10は実施例で示し
たPVKだけでなく、暗時に電極8から光導電体層2へ
の多数担体の注入を阻止する性質を持ち、かつ輻射線の
照射により光導電性を示す全ての材料が使用可能である
For example, when the recording image light 6 is irradiated from the side of the transparent conductive electrode 8 as shown in FIG. When 2 is P type, the polarity of each charger is selected so that the transparent conductive electrode 2 becomes positive. When such a relationship is selected, the majority carriers generated by the recording image light can be efficiently utilized. Note that the photoconductive injection blocking layer 10 is not only made of PVK shown in the embodiment, but also has the property of blocking the injection of majority carriers from the electrode 8 into the photoconductor layer 2 in the dark, and also prevents photoconductive injection by irradiation with radiation. All materials exhibiting properties can be used.

例えば、硫化亜鉛、酸化亜鉛、セレン化亜鉛等の無期材
料、アントラセン等の有機材料等が他の代表例である。
又、光導電体層2に関しても、多くの変化が可能であり
、セレン蒸着層の他にセレン−テルル合金蒸着層、セレ
ン化一砒素、酸化亜鉛、硫化カドミウム、セレン化カド
ミウム、酸化鉛等が、その代表例である。又、その製造
法についても蒸着だけでなく有機樹脂バインダーを作つ
た粉体塗布層、焼結層等も同様に使用出来る。又、透明
支持体9についても多くの変化が可能であり、この発明
の実施例のポリエチレンテレフタレートだけでなく、フ
ツ素樹脂、ポリエステル、ポリカーボネイト、アクリル
、ポリエチレン等の有機樹脂、或はガラス等の無期物が
支持体として各々使用可能である。又、透明支持体9の
厚みは特に制限するものではないが、第5図に示した様
にオプテイカルフアイバ一管25を記録像光源として使
う場合には、オプテイカルフアイバ一管25のオプテイ
カルフアイバ一部24が透明支持体9と近接する位置に
配置する。この際、オプテイカルフアイバ一部24から
の記録像光の解像度の低下を出来るだけ少くするために
は、透明基板9の厚みは出来るだけ薄い方がよい。例え
ば、10本/Mmの解像度を要求される用途に対しては
、100ミクロンのポリエチレンテレフタレートを透明
支持体9として使用した。又、透明導電性電極8につい
ても多くの変化が可能であり酸化インジウム、ヨウ化銅
、金属半透明蒸着膜等を用いた。
For example, other typical examples include indefinite materials such as zinc sulfide, zinc oxide, and zinc selenide, and organic materials such as anthracene.
Moreover, many changes are possible for the photoconductor layer 2, and in addition to the selenium vapor deposited layer, a selenium-tellurium alloy vapor deposited layer, monoarsenic selenide, zinc oxide, cadmium sulfide, cadmium selenide, lead oxide, etc. , is a typical example. Further, regarding the manufacturing method, not only vapor deposition but also a powder coating layer made of an organic resin binder, a sintered layer, etc. can be used. Furthermore, the transparent support 9 can be varied in many ways, including not only polyethylene terephthalate in the embodiment of this invention, but also organic resins such as fluororesin, polyester, polycarbonate, acrylic, and polyethylene, or permanent materials such as glass. can each be used as a support. Although the thickness of the transparent support 9 is not particularly limited, when the optical fiber tube 25 is used as a recording image light source as shown in FIG. The fiber section 24 is placed in close proximity to the transparent support 9. At this time, in order to minimize the decrease in resolution of the recording image light from the optical fiber portion 24, the thickness of the transparent substrate 9 is preferably as thin as possible. For example, for applications requiring a resolution of 10 lines/Mm, 100 micron polyethylene terephthalate was used as the transparent support 9. Moreover, many changes are possible for the transparent conductive electrode 8, and indium oxide, copper iodide, a metal semitransparent vapor deposited film, etc. were used.

又、帯電器に印加する電圧はプラス、或はマイナスと直
流電圧として説明したが、実効的にプラス、或はマイナ
ス電圧として働くことを意味するものであり、光導電体
層2中で発生した多数担体を実質的に表面絶縁体層2の
方向に移動させることを可能とする全ての波形の電圧を
使用できる。例えば、半波、或は全波整流正弦波電圧、
短波形、三角波電圧がその代表例である。以上、詳述し
た様にこの発明によれば、透明支持体側から記録像光を
与えても、透明導電性電極からの多数担体の注入のない
、極めてS/Nのよい電子写真方式を提供するものであ
り、記録像光源としてオプテイカルフアイバ一管を使用
する場合には、光学的損失の少い電子写真装置を提供出
来る利点を有するものである。
In addition, although the voltage applied to the charger has been explained as a positive or negative DC voltage, this means that it effectively works as a positive or negative voltage, and the voltage applied to the charger is a DC voltage that is generated in the photoconductor layer 2. Any voltage waveform that allows the majority carriers to be moved substantially in the direction of the surface insulator layer 2 can be used. For example, half-wave or full-wave rectified sine wave voltage,
Typical examples are short waveform and triangular wave voltage. As described in detail above, according to the present invention, an electrophotographic method with extremely good S/N is provided without injection of majority carriers from a transparent conductive electrode even when recording image light is applied from the transparent support side. When a single optical fiber tube is used as a recording image light source, it has the advantage that an electrophotographic apparatus with less optical loss can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の電子写真感光板の断面構造及び通常の使
用法を示す図、第2図は透明導電性電極を設けた従来の
電子写真感光板の作像時の構成図、第3図はこの発明の
感光板の基本構造図、第4図はこの発明の感光板を用い
た電子写真方式を示す基本工程図、第5図は記録像光源
としてオプテイカルフアイバ一管を使用した場合のこの
発明の実施例である。 図中同一符号は同一又は相当部分を示している。
Fig. 1 is a diagram showing the cross-sectional structure and normal usage of a conventional electrophotographic photosensitive plate, Fig. 2 is a diagram showing the configuration of a conventional electrophotographic photosensitive plate provided with transparent conductive electrodes during image formation, and Fig. 3 4 is a basic structural diagram of the photosensitive plate of this invention, FIG. 4 is a basic process diagram showing an electrophotographic method using the photosensitive plate of this invention, and FIG. 5 is a diagram of the case where a single optical fiber tube is used as a recording image light source. This is an example of this invention. The same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 1 透明支持体、透明導電性電極層、光導電性注入阻止
層、光導電体、表面絶縁体層の順に積層してなる感光板
を使用し、前記感光板に表面絶縁体層側から実効的に正
あるいは負のコロナ帯電を行ないつつ、透明支持体側か
ら記録像光を照射し前記絶縁体層表面に電荷潜像を形成
する際光導性注入阻止層が透明電極から光導電体層への
担体の注入を阻止する工程と、記録像光の照射後の期間
に上記光導電性注入阻止層に光導電性を誘起する電磁波
を照射し、光導電性注入阻止層の分極電荷を放出させる
工程とを有する電子写真方式。
1. Using a photosensitive plate formed by laminating a transparent support, a transparent conductive electrode layer, a photoconductive injection blocking layer, a photoconductor, and a surface insulator layer in this order, the photosensitive plate is effectively coated from the surface insulator layer side. When a recording image light is irradiated from the transparent support side to form a charge latent image on the surface of the insulating layer while applying positive or negative corona charging to the transparent support, the photoconductive injection blocking layer acts as a carrier from the transparent electrode to the photoconductor layer. and a step of irradiating the photoconductive injection blocking layer with an electromagnetic wave that induces photoconductivity during a period after irradiation with the recording image light to release polarized charges in the photoconductive injection blocking layer. An electrophotographic method with
JP49073012A 1974-06-25 1974-06-25 Electrophotographic method Expired JPS5918702B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49073012A JPS5918702B2 (en) 1974-06-25 1974-06-25 Electrophotographic method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49073012A JPS5918702B2 (en) 1974-06-25 1974-06-25 Electrophotographic method

Publications (2)

Publication Number Publication Date
JPS512431A JPS512431A (en) 1976-01-10
JPS5918702B2 true JPS5918702B2 (en) 1984-04-28

Family

ID=13505988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49073012A Expired JPS5918702B2 (en) 1974-06-25 1974-06-25 Electrophotographic method

Country Status (1)

Country Link
JP (1) JPS5918702B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0175002U (en) * 1987-11-06 1989-05-22

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240581B2 (en) * 1972-04-24 1977-10-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0175002U (en) * 1987-11-06 1989-05-22

Also Published As

Publication number Publication date
JPS512431A (en) 1976-01-10

Similar Documents

Publication Publication Date Title
US2833648A (en) Transfer of electrostatic charge pattern
US3666363A (en) Electrophotographic process and apparatus
US4123269A (en) Electrostatographic photosensitive device comprising hole injecting and hole transport layers
US3776627A (en) Electrophotographic apparatus using photosensitive member with electrically high insulating layer
US4492745A (en) Photosensitive member for electrophotography with mirror finished support
US3653890A (en) Screen electrophotographic charge induction process
US3752572A (en) Apparatus for making electrographs
US3719481A (en) Electrostatographic imaging process
US3685989A (en) Ambipolar photoreceptor and method of imaging
US3734609A (en) Electrophotographic process and apparatus
US4063945A (en) Electrostatographic imaging method
US3712810A (en) Ambipolar photoreceptor and method
US4675261A (en) Electrophotographic process with a photoconductive screen
US3666364A (en) Electrophotographic apparatus
US3953206A (en) Induction imaging method utilizing an imaging member with an insulating layer over a photoconductive layer
US3655369A (en) Persistent internal polarization process in electrophotography
US3794418A (en) Imaging system
US3166420A (en) Simultaneous image formation
JPS5919335B2 (en) electrophotography
JPS5918702B2 (en) Electrophotographic method
JPH07120953A (en) Electrophotographic photoreceptor and image forming method using the same
US3666365A (en) Electrophotographic process and apparatus involving persistent internal polarization
US3645729A (en) Method of transferring electrostatic latent images using multiple photoconductive layers
US4010031A (en) Electrophotographic system
US4064514A (en) Portable camera