JPS5919447B2 - Sandwich type thick film varistor - Google Patents
Sandwich type thick film varistorInfo
- Publication number
- JPS5919447B2 JPS5919447B2 JP54130562A JP13056279A JPS5919447B2 JP S5919447 B2 JPS5919447 B2 JP S5919447B2 JP 54130562 A JP54130562 A JP 54130562A JP 13056279 A JP13056279 A JP 13056279A JP S5919447 B2 JPS5919447 B2 JP S5919447B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- thick film
- zinc oxide
- type thick
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 23
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明はサンドイッチ型厚膜バリスタに関し、詳しくは
きわめて低いバリスタ電圧を有する酸化亜鉛系ブレース
バリスタの構成を開示する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to sandwich-type thick film varistors, and specifically discloses a zinc oxide-based brace varistor construction having a very low varistor voltage.
従来、ブレースバリスフとして、酸化亜鉛粉末とこれを
結合する酸化硼素、酸化バリウム、酸化鉛、酸化亜鉛等
からなるガラスによって構成されるバリスタ膜に、銀電
極を付与したものが発明され、小型電動機の整流子と刷
子との間に発生する火花電圧を消去する目的等の実用に
供されている。Conventionally, a brace varistor film was invented in which a silver electrode was added to a varistor film made of zinc oxide powder and glass made of boron oxide, barium oxide, lead oxide, zinc oxide, etc., which was bonded to zinc oxide powder, and it was used for small electric motors. It is used for practical purposes such as eliminating spark voltage generated between a commutator and a brush.
これらのバリスタ電圧は概ねＩＯＶ以上のものが適用さ
れている。These varistor voltages are generally higher than IOV.
このバリスタ電圧を変化させる手段としては、膜厚が一
定の場合は酸化亜鉛の粒径が大きいものを使うか、酸化
亜鉛の粒径が一定の場合は膜厚を薄くするかである。As a means for changing the varistor voltage, if the film thickness is constant, use zinc oxide with a large particle size, or if the zinc oxide particle size is constant, make the film thickness thinner.
しかし、膜厚を極端に薄くしたり、粒径の大きい酸化亜
鉛を適用した場合はいずれも性能の安定性を欠き、特性
値のバラツキが大きくなる等の問題がある。However, when the film thickness is made extremely thin or when zinc oxide with a large particle size is used, there are problems such as lack of performance stability and increased variation in characteristic values.
従って、電源電圧の低い回路に有効に適用しうる、バリ
スタ電圧の低いグレーズバリスタを作るのが困難であっ
た。Therefore, it has been difficult to produce a glaze varistor with a low varistor voltage that can be effectively applied to circuits with a low power supply voltage.
本発明は、電極材料に起因する低電圧化の制約を排除す
るもので、更に低いバリスタ電圧を得ることが可能なサ
ンドインチ型厚膜バリスタ（グレーズバリスタ）を提供
するものである。The present invention eliminates restrictions on lowering voltage due to electrode materials, and provides a sandwich-type thick film varistor (glaze varistor) that can obtain an even lower varistor voltage.
グレーズバリスタのバリスタ電圧は、酸化亜鉛−ガラス
層−酸化亜鉛の関係で生じるバリスタ電圧の直列数と、
酸化亜鉛と電極材料である金属の仕事関数のちがいによ
る接触電位差によって生じる障壁のバリスタ電圧が合成
されたものと考えられる。The varistor voltage of the glaze varistor is determined by the number of varistor voltages in series that occur due to the relationship between zinc oxide, glass layer, and zinc oxide, and
It is thought that the varistor voltage of the barrier is synthesized due to the contact potential difference due to the difference in work function between zinc oxide and the metal that is the electrode material.
従来のグレーズバリスタの構成、即ち酸化亜鉛と銀電極
の構成において、前記障壁によるバリスタ電圧は約３．
９Ｖを占めることを確認した。In the conventional glaze varistor configuration, ie, the zinc oxide and silver electrode configuration, the varistor voltage due to the barrier is about 3.
It was confirmed that the voltage was 9V.
この障壁によるバリスタを生成せしめないようにするこ
とによって、バリスタ電圧を３．９Ｖ下げることが可能
である。By preventing the formation of a varistor due to this barrier, it is possible to lower the varistor voltage by 3.9V.
その手段として、種々実験したところ適用する電極材料
の金属が仕事関数が４．１以下のものであれば、障壁に
よるバリスタが生成しないことが分った。As a means for this, various experiments were conducted and it was found that if the metal used as the electrode material has a work function of 4.1 or less, no varistor is generated due to the barrier.
以下、実施例によって本発明を説明する。The present invention will be explained below with reference to Examples.
平均粒径８μの酸化亜鉛粉末とガラス粉末を６０：４０
の割合で混合し、得られた固形分５ｇにエチルセルロー
ズを１０重量％含むターピネオール０．３ｇを加えてよ
く混練し、ペースト状にした。Zinc oxide powder with an average particle size of 8μ and glass powder in a ratio of 60:40
0.3 g of terpineol containing 10% by weight of ethyl cellulose was added to 5 g of the resulting solid content and thoroughly kneaded to form a paste.
このペーストと、各種金属の電極材料で図面に示すよう
なサンドイッチ型の厚膜バリスタを作成した。A sandwich-type thick film varistor as shown in the drawing was created using this paste and various metal electrode materials.
図で１は絶縁基板、２は金属電極、３はバリスタ膜であ
る。In the figure, 1 is an insulating substrate, 2 is a metal electrode, and 3 is a varistor film.
このときのバリスタ膜の膜厚は３０μであった。The thickness of the varistor film at this time was 30μ.
これらの厚膜バリスタに電流１０ｍＡを流したときの端
子間電圧ｖ１ｏを調べた結果は以下の通りであった。The results of examining the inter-terminal voltage v1o when a current of 10 mA was passed through these thick film varistors were as follows.
※：比較例
上記から明らかなように、本発明によれば大巾なバリス
タ電圧の低圧化ができる。*: Comparative Example As is clear from the above, according to the present invention, the varistor voltage can be significantly reduced.
ところで、仕事関数が４．１以下の金属１ｒｉＡｄ。By the way, metal 1riAd has a work function of 4.1 or less.
Ｓｎ 、Ｚｎ 、Ｐｂ 、Ｔａ等があるが、これらを単
独で電極に適用しようとしても融点が低かったり、製品
にした場合に半田付けが困難だったりして不都合であり
、実施例では銀との合金において特性を確認した。There are Sn, Zn, Pb, Ta, etc., but if you try to apply these alone to electrodes, it is inconvenient because the melting point is low or it is difficult to solder when made into a product. The properties of the alloy were confirmed.
ブレースバリスタの結合ガラスの融点が低い場合ｆ、半
田付は等を考慮しない場合は上記金属単独でもよい。If the bonding glass of the brace varistor has a low melting point f, and if soldering etc. are not considered, the above metal alone may be used.
以上詳述したように本発明によれば、きわめて低いバリ
スタ電圧の厚膜バリスタを得ることができる。As detailed above, according to the present invention, a thick film varistor with extremely low varistor voltage can be obtained.
第１図、第２図は本発明に係るサンドインチ型厚膜バリ
スタの一実施例を示すＹ軸、Ｙ軸の断面図である。
１・・・・・・絶縁、２・・・・・・金属電極、３・・
・・・・バリスタ膜。FIGS. 1 and 2 are Y-axis and Y-axis cross-sectional views showing an embodiment of a sandwich type thick film varistor according to the present invention. 1...Insulation, 2...Metal electrode, 3...
...Ballista membrane.
Claims (1)
極で挾持して設けた構成を具備し、前記電極材料が仕事
関数が４．１以下の金属でなることを特徴とするサンド
インチ型厚膜バリスタ。1. A sandwich-type thick film varistor, comprising a structure in which a zinc oxide brace varistor is sandwiched between metal electrodes on an insulating substrate, and the electrode material is made of a metal with a work function of 4.1 or less. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54130562A JPS5919447B2 (en) | 1979-10-09 | 1979-10-09 | Sandwich type thick film varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54130562A JPS5919447B2 (en) | 1979-10-09 | 1979-10-09 | Sandwich type thick film varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5654007A JPS5654007A (en) | 1981-05-13 |
| JPS5919447B2 true JPS5919447B2 (en) | 1984-05-07 |
Family
ID=15037213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54130562A Expired JPS5919447B2 (en) | 1979-10-09 | 1979-10-09 | Sandwich type thick film varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5919447B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61218673A (en) * | 1985-03-25 | 1986-09-29 | Agency Of Ind Science & Technol | Hot-melt adhesive curable with ionizing radiation |
-
1979
- 1979-10-09 JP JP54130562A patent/JPS5919447B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5654007A (en) | 1981-05-13 |
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