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JPS592089B2 - Tasoshijiki head - Google Patents
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JPS592089B2 - Tasoshijiki head - Google Patents

Tasoshijiki head

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Publication number
JPS592089B2
JPS592089B2 JP13535575A JP13535575A JPS592089B2 JP S592089 B2 JPS592089 B2 JP S592089B2 JP 13535575 A JP13535575 A JP 13535575A JP 13535575 A JP13535575 A JP 13535575A JP S592089 B2 JPS592089 B2 JP S592089B2
Authority
JP
Japan
Prior art keywords
magnetic
recording medium
groove
magnetoresistive
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13535575A
Other languages
Japanese (ja)
Other versions
JPS5258907A (en
Inventor
謙二 金井
伸征 紙中
紀台 能知
登 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13535575A priority Critical patent/JPS592089B2/en
Publication of JPS5258907A publication Critical patent/JPS5258907A/en
Publication of JPS592089B2 publication Critical patent/JPS592089B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は、フェライト等の強磁性体基板上に、パーマロ
イ等の強磁性薄板または薄膜を被着して複数個の磁気抵
抗効果素子を有する多素子磁気ヘッドにおいてバイアス
ラインあるいは共通電極を付加したときに磁気抵抗効果
素子が段差をもち断線しやすくなるのを防止する構成に
関する。
Detailed Description of the Invention The present invention provides a bias line in a multi-element magnetic head having a plurality of magnetoresistive elements by coating a ferromagnetic thin plate or thin film such as permalloy on a ferrite or other ferromagnetic substrate. Alternatively, the present invention relates to a structure that prevents a magnetoresistive element from having a step and being easily disconnected when a common electrode is added.

従来、強磁性体に磁界を印加したとき電気的抵抗値が変
化する磁気抵抗効果を利用した磁気ヘッドの原理的構成
は第1図のようになつている。第1図では、記録媒体1
と垂直(y方向)に強磁性薄板からなる磁気抵抗効果素
子2を接触させ、記録媒体1と摺動可能にする。磁気抵
抗効果素子2の長手方向(2方向)の両端に電極3、4
を設け、電極3、4間に一定電流を流し、記録媒体1か
らのy方向の信号磁界により、z方向の抵抗値変化を電
極3、4の間の電圧変化により検出する。この方式を用
いて、多素子磁気ヘッドを構成すると、第2図に示した
構造になる。ガラス等の非磁性絶縁体基板5上に、パー
マロイ等の異方性をもつ強磁性導電体膜を形成し、磁化
容易軸を矢印aの方向になるようにする。磁気抵抗効果
素子2の両端に、電極3、4を設け、電極3、4間の電
圧を検出する。記録媒体とは基板5の摺動面6で接触摺
動する。この方式では、記録媒体1からの信号磁界強度
は指数関数的に減少し、特に記録媒体上の記録波長が短
い領域では、磁気抵抗効果素子2の幅方向の信号磁界の
減衰は非常に大きなものとなる。また、このヘッドの構
成では、ヘッドトラック幅に相当する幅Wを極端に小さ
くすると、出力電圧が低下し、また素子2の幅uを小さ
くし、電流密度を大きくして出力電圧を増加する事も考
えられるが、トラックピッチを稠密化してゆくと、製造
上問題点が多くなり、対磨耗性も悪く、実用上困難であ
つた。本発明は上記従来例に鑑み、多素子磁気ヘッドに
おいて、磁気抵抗効果素子(以下MR素子)を記録媒体
と直接接触摺動しないように、磁束収束コアにより磁気
抵抗効果素子に磁束を導き、磁気抵抗効果素子の効率を
あげ、摩耗特性を改善するとともに、強磁性体基板に溝
を設けることにより磁気抵抗効果素子を記録媒体に対し
て垂直になるように構成することを可能にし、従来例よ
りも稠密なヘツドピツチを得ることを可能にするととも
に強磁性体基板に設けられた溝中にバイアス磁界発生用
コイルを埋設し、全素子に共通にバイアス磁界を加え歪
みのない再生出力を得るとともに、溝上を僑絡するMR
素子に段差が生じないようにして、MR素子の断線の発
生を防止するものである。
Conventionally, the basic structure of a magnetic head that utilizes the magnetoresistive effect, in which the electrical resistance value changes when a magnetic field is applied to a ferromagnetic material, is as shown in FIG. In FIG. 1, recording medium 1
A magnetoresistive element 2 made of a ferromagnetic thin plate is brought into contact perpendicularly (in the y direction) to the recording medium 1 so as to be able to slide on the recording medium 1. Electrodes 3 and 4 are provided at both ends of the magnetoresistive element 2 in the longitudinal direction (two directions).
A constant current is passed between the electrodes 3 and 4, and a change in resistance value in the z direction is detected by a change in voltage between the electrodes 3 and 4 using a signal magnetic field in the y direction from the recording medium 1. When a multi-element magnetic head is constructed using this method, the structure shown in FIG. 2 is obtained. A ferromagnetic conductive film having anisotropy such as permalloy is formed on a non-magnetic insulating substrate 5 such as glass so that the axis of easy magnetization is in the direction of arrow a. Electrodes 3 and 4 are provided at both ends of the magnetoresistive element 2, and the voltage between the electrodes 3 and 4 is detected. The recording medium contacts and slides on the sliding surface 6 of the substrate 5. In this method, the signal magnetic field strength from the recording medium 1 decreases exponentially, and especially in the region where the recording wavelength on the recording medium is short, the attenuation of the signal magnetic field in the width direction of the magnetoresistive element 2 is extremely large. becomes. In addition, in this head configuration, if the width W corresponding to the head track width is made extremely small, the output voltage will decrease, and it is also possible to reduce the width U of the element 2 and increase the current density to increase the output voltage. However, as the track pitch becomes denser, there are many problems in manufacturing, and the wear resistance is also poor, making it difficult in practice. In view of the above-mentioned conventional example, the present invention has been developed in a multi-element magnetic head by guiding magnetic flux to the magnetoresistive element using a magnetic flux convergence core so as to prevent the magnetoresistive element (hereinafter referred to as MR element) from sliding in direct contact with the recording medium. In addition to increasing the efficiency of the resistance effect element and improving its wear characteristics, by providing grooves in the ferromagnetic substrate, it is possible to configure the magnetoresistive effect element perpendicular to the recording medium, which is more effective than conventional methods. In addition to making it possible to obtain a dense head pitch, a coil for generating a bias magnetic field is buried in a groove provided in the ferromagnetic substrate, and a bias magnetic field is applied to all elements in common to obtain a reproduction output without distortion. MR who seduces Mizogami
This prevents the occurrence of disconnection of the MR element by preventing a step from forming in the element.

第3図に本発明による多素子磁気ヘツドの平面図を示し
、第4図にそのA−N断面図、第5図B′断面図を示し
た。
FIG. 3 shows a plan view of a multi-element magnetic head according to the present invention, FIG. 4 shows a sectional view taken along line AN, and FIG. 5 shows a sectional view taken along line B'.

強磁性体基板7に溝8を設け、この溝8中に、銅や金等
の比較的融点の高い非磁性導電体層9を蒸着等の方法を
用いて形成するか、又は、針金状の非磁性導電体9を溝
8中に埋設して、ガラス等の非磁性体絶縁材料10で充
填する。この場合、コ字状に非磁性体絶縁材料10を形
成し、第5図に示すように、非磁性導電体9が外部回路
と接合するための露呈部分をコの字の両端部に設ける。
溝8の形状は、第4図には円弧で表わしてあるが、磁気
抵抗効果素子に直接対向する強磁性体がないように構成
できれば、その他の形状でもよい。この溝8を持つ基板
7の表面を研磨して、非磁性体絶縁材料10と基板7と
の界面で凹凸かないようにする。強磁性体基板7はフエ
ライト等のセラミツクで構成すると比較的抵抗が高く、
基板7上に直接、アルミニウムやパーマロイ等の導電体
を蒸着等の手段で形成しても問題はない。また、パーラ
ロイ等の導電性強磁性体で基板7上に直接、導体層を設
ける事はできず、基板7と非磁性体絶縁材料10との表
面の上に電気的絶縁を必要とする。電気的絶縁膜は、S
lOやSlO2を蒸着等の手段を用いて形成することが
できる。次に各素子に、信号検出用コイル13を該溝に
対して垂直に、また、各MR素子と平行にアルミニウム
、銅等の導電性物質の膜を蒸着等の方法を用いて被着し
、フオトエツチングや電子ビーム加工技術等を利用して
、第3図に示したように、MR素子を包含するような形
状に形成する。このコイル13の記録媒体との当接面1
6に接近した一部分と、当接而から一番遠いコイル9お
よび13の一部分を除いた部分は、SiOやSiO2等
の電気的絶縁体層14を、蒸着やスパツタリング技術を
利用して設ける。次にこの絶縁体層14の上に強磁性体
膜を蒸着やスパツタリノグ技術を利用して設け、磁化容
易軸が、MR素子11の幅方向、すなわら、溝8に対し
て平行な方向になるように形成する。MR素子11の長
さは、溝8の幅S全体に渡るようにするのが効果がよい
。MR素子11と同時に高透磁率の磁束収束コア12を
溝8と記録媒体との当接面16との間と、溝8に対して
記録媒体から遠ざかる方向に磁束収束コア12を設ける
。磁束収束コア12は基板7の記録媒体当接面16側に
て基板7とギヤツプを形成している。磁束収束コア12
の記録媒体との当接面16から遠い部分では、全素子に
共通に設けられた共通電極15と導通している。共通電
極15は新に、アルミニウム、銅等の導電体層を設ける
か、または磁束収束コア12自身の形状を共通電極を持
つたように形成する。本発明による磁気ヘツドは、特に
記録された信号を再生するために作られたマルチチヤン
ネルヘツドであり、MR素子11の両端に誘起される電
圧を検出して動作する。
A groove 8 is provided in the ferromagnetic substrate 7, and a non-magnetic conductive layer 9 of relatively high melting point, such as copper or gold, is formed in the groove 8 using a method such as vapor deposition, or a wire-like conductive layer 9 is formed using a method such as vapor deposition. A non-magnetic conductor 9 is buried in the groove 8 and filled with a non-magnetic insulating material 10 such as glass. In this case, the non-magnetic insulating material 10 is formed in a U-shape, and as shown in FIG. 5, exposed portions for the non-magnetic conductor 9 to be connected to an external circuit are provided at both ends of the U-shape.
Although the shape of the groove 8 is shown as a circular arc in FIG. 4, it may have any other shape as long as it can be constructed so that no ferromagnetic material directly opposes the magnetoresistive element. The surface of the substrate 7 having the grooves 8 is polished so that there are no irregularities at the interface between the non-magnetic insulating material 10 and the substrate 7. When the ferromagnetic substrate 7 is made of ceramic such as ferrite, it has a relatively high resistance.
There is no problem even if a conductor such as aluminum or permalloy is directly formed on the substrate 7 by means such as vapor deposition. Further, it is not possible to directly provide a conductive layer on the substrate 7 using a conductive ferromagnetic material such as Perlloy, and electrical insulation is required on the surfaces of the substrate 7 and the non-magnetic insulating material 10. The electrical insulating film is S
IO or SlO2 can be formed using means such as vapor deposition. Next, a signal detection coil 13 is deposited on each element perpendicularly to the groove, and a film of a conductive material such as aluminum or copper is deposited in parallel to each MR element using a method such as vapor deposition. Using photo-etching, electron beam processing technology, etc., it is formed into a shape that encompasses the MR element, as shown in FIG. Contact surface 1 of this coil 13 with the recording medium
An electrical insulating layer 14 of SiO, SiO2 or the like is provided on the parts other than the part closest to coil 6 and the parts of coils 9 and 13 farthest from the contact point using vapor deposition or sputtering technology. Next, a ferromagnetic film is provided on this insulating layer 14 using vapor deposition or sputtering technology, so that the axis of easy magnetization is aligned in the width direction of the MR element 11, that is, in a direction parallel to the groove 8. Form it so that it becomes. It is effective that the length of the MR element 11 spans the entire width S of the groove 8. At the same time as the MR element 11, magnetic flux converging cores 12 with high magnetic permeability are provided between the groove 8 and the abutting surface 16 of the recording medium, and in the direction away from the recording medium with respect to the groove 8. The magnetic flux converging core 12 forms a gap with the substrate 7 on the side of the recording medium abutting surface 16 of the substrate 7. Magnetic flux convergence core 12
A portion far from the contact surface 16 with the recording medium is electrically connected to a common electrode 15 provided commonly to all elements. For the common electrode 15, a new conductive layer of aluminum, copper, etc. is provided, or the shape of the magnetic flux converging core 12 itself is formed so as to have a common electrode. The magnetic head according to the present invention is a multi-channel head made especially for reproducing recorded signals, and operates by detecting the voltage induced across the MR element 11.

記録媒体との当接面16付近(こある記録媒体から発生
する信号磁界を、強磁性基板7と磁束収束コア12とに
磁気的な空隙部13をはさんで誘導し、MR素子の両端
に、磁気的なポテンシヤルをかける。一方、各素子に一
つづつ設けられたコイル13からMR素子11を通し、
収束コア12の上に電気的に接触する共通電極15の間
に一定電流を流し、]イル13と電極15との間の″市
位差を信号として取り出す。信号磁界が変化するとMR
素子の両端に誘起される磁気的なポテノシヤルが変化し
MR素子の抵抗値が変化し、コイル13と電極15との
間に発生する電位差が変化し、記録された信号を読み出
すことができる。第6図にパーマロイの磁場Hに対する
抵抗率変化△ρ/ρの特性を示し、入力信号磁界111
1とそれによつて得られる抵抗変化を電圧として取出し
た場合の出力電圧1010とを示した。
The signal magnetic field generated from the recording medium is guided through the magnetic gap 13 between the ferromagnetic substrate 7 and the magnetic flux convergence core 12, and is applied to both ends of the MR element near the contact surface 16 with the recording medium. , a magnetic potential is applied.On the other hand, the MR element 11 is passed through the coil 13 provided for each element,
A constant current is passed between the common electrodes 15 that are in electrical contact with the convergent core 12, and the difference in level between the coil 13 and the electrodes 15 is taken out as a signal.When the signal magnetic field changes, the MR
The magnetic potentials induced at both ends of the element change, the resistance value of the MR element changes, the potential difference generated between the coil 13 and the electrode 15 changes, and the recorded signal can be read out. Figure 6 shows the characteristics of resistivity change △ρ/ρ with respect to the magnetic field H of permalloy, and the input signal magnetic field 111
1 and an output voltage 1010 when the resulting resistance change is extracted as a voltage.

パーマロイの磁気抵抗効果は、回転磁化が現われ始める
磁場付近で顕著になり、磁化の回転が完了して飽和に達
すると、抵抗変化率も飽和する。この磁気抵抗効果素子
に無バイアスのまま信号磁界11を入れると磁気抵抗効
果の曲線が縦軸に対して対称になつていることから容易
に理解されるように、出力電圧10は倍周波になり、ま
た、非線型部分の特性を用いているので出力波形の歪み
が大きい。一方、バイアスを、本発明によるバイアスコ
イル9によつて磁気抵抗効果素子に与え、無バイアス状
態のB点からC点に移し、信号磁界11を加えると、磁
気抵抗効果の曲線の直線性のよい部分を利用することが
でき、出力波形は、入力信号と同一の周波数でかつ、歪
みが少なくなり、良好な再生が可能である。このコイル
がギヤツプを有する磁気回路中に設けられていることに
より、消磁用のコイルとしても用いることができる。以
上のように本発明の磁気ヘツドにおいては、磁気ヘツド
は、MR素子11が形成される平面が平滑になるように
考慮されている。
The magnetoresistive effect of permalloy becomes noticeable near the magnetic field where rotating magnetization begins to appear, and when the rotation of magnetization is completed and saturation is reached, the rate of change in resistance also becomes saturated. When a signal magnetic field 11 is applied to this magnetoresistive element with no bias, the output voltage 10 becomes frequency doubled, as can be easily understood from the fact that the curve of the magnetoresistive effect becomes symmetrical with respect to the vertical axis. Also, since the characteristics of the nonlinear part are used, the distortion of the output waveform is large. On the other hand, if a bias is applied to the magnetoresistive element by the bias coil 9 according to the present invention, and the bias is moved from point B to point C in an unbiased state, and a signal magnetic field 11 is applied, the magnetoresistive effect curve has good linearity. The output waveform has the same frequency as the input signal and has less distortion, allowing good reproduction. Since this coil is provided in a magnetic circuit having a gap, it can also be used as a demagnetizing coil. As described above, the magnetic head of the present invention is designed so that the plane on which the MR element 11 is formed is smooth.

すなわち、MR素子11の膜厚は一般に500オングス
トロームから2ミクロン程度と考えられ、バイアス用コ
イル9の膜厚が1ミクロン程度であり、MR素子11と
バイアス用コイル9との交錯部に1ミクロンの段差が生
じれば、MR素子は容易に断線する。すなわちバイアス
用]イルが基板上に形成されると、必ずMR素子の断線
が製造上の大きな問題となる。よつて、本実施例のよう
にバイアス用コイル9を埋設した面一の基板7上に、電
流供給用のコイル13を均一に蒸着等の手段によつて形
成し、MR素子11および磁束収束コア12の形状より
も大ぎく包含するような形状にフオトエツチングすれば
、MR素子11の部分での段差がなく、断線が生じない
。この他に本発明による多素子磁気ヘツドにおいては次
のような効果がある。
That is, the film thickness of the MR element 11 is generally considered to be about 500 angstroms to 2 microns, the film thickness of the bias coil 9 is about 1 micron, and the film thickness of the MR element 11 and the bias coil 9 is about 1 micron. If a step occurs, the MR element is easily disconnected. That is, when a bias filter is formed on a substrate, disconnection of the MR element always becomes a major manufacturing problem. Therefore, as in this embodiment, the current supply coil 13 is uniformly formed on the flush substrate 7 in which the bias coil 9 is embedded by means such as vapor deposition, and the MR element 11 and the magnetic flux convergence core are If photoetching is carried out to a shape that encompasses the MR element 12 to a greater extent, there will be no step difference at the MR element 11 and no disconnection will occur. In addition, the multi-element magnetic head according to the present invention has the following effects.

すなわち、全素子に共通に、また記録媒体に平行な溝を
設けた基板上に、溝に対して直行するMR素子を設ける
ことにより、従来からの問題点、すなわち、MR素子の
トラツク幅に相当する幅Wを極端に小さくすることがで
きないため、素子の稠密化が困難であり、記録密度を大
きくすることができなかつた点を改善している。また、
接触摺動面と垂直にMR素子を配置することにより、共
通電極を構成することを可能とし、従来例では各素子に
ついて必要であつた電極を、各素子について一個にする
ことができ、より稠密に素子を配置することができる。
また、磁束収束コアにより、磁束を誘導するため、MR
素子が直接記録媒体と接触摺動せず、1楚耗によるMR
特性の劣化はなくなつた。また、全素子に共通なバイア
スコイルにより、バイアス磁界を加え、歪みの少ない出
力信号を得る事ができる。
In other words, by providing an MR element perpendicular to the groove on a substrate having grooves common to all elements and parallel to the recording medium, the conventional problem, that is, the track width of the MR element, can be solved. This improves the problem that it was difficult to increase the density of the element and increase the recording density because the width W cannot be made extremely small. Also,
By arranging the MR elements perpendicular to the contact sliding surface, it is possible to configure a common electrode, and the electrode required for each element in the conventional example can be reduced to one for each element, making it possible to create a more densely packed structure. The elements can be placed in the
In addition, in order to induce magnetic flux by a magnetic flux convergence core, MR
MR due to wear and tear due to the element not sliding in direct contact with the recording medium
There was no longer any deterioration in characteristics. Additionally, a bias coil common to all elements applies a bias magnetic field, making it possible to obtain an output signal with less distortion.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の磁気抵抗効果素子を用いた磁気ヘツド
の斜視図、第2図は第1図の原理的磁気ヘツドを用いて
構成した多素子磁気ヘツドの構成図、第3図は本発明に
よる磁気ヘツドの一実施例の平面図、第4図は第3図の
A−N断面図、第5図は第3図のB−B″断面図、第6
図は磁気抵抗効果とバイアス効果の説明図である。 7・・・・・・強磁性体基板、8−・・・・・溝、9−
・・−・・非磁性導電体層、10・・・・・・非磁性体
絶縁材料、11・・・・・・MR素子、12・・・・・
・磁束収束コア、13・・・・・・コイル 14・・・
・・・絶縁体層、15・・・・・・共通電極、16・・
・・・・当接面。
Fig. 1 is a perspective view of a magnetic head using a conventional magnetoresistive element, Fig. 2 is a block diagram of a multi-element magnetic head constructed using the principle magnetic head of Fig. 1, and Fig. 3 is a diagram of the present invention. A plan view of one embodiment of the magnetic head according to the invention, FIG. 4 is a sectional view taken along the line A-N in FIG. 3, FIG.
The figure is an explanatory diagram of the magnetoresistive effect and the bias effect. 7...Ferromagnetic substrate, 8-...Groove, 9-
......Nonmagnetic conductor layer, 10...Nonmagnetic insulating material, 11...MR element, 12...
・Magnetic flux convergence core, 13... Coil 14...
...Insulator layer, 15...Common electrode, 16...
...Abutment surface.

Claims (1)

【特許請求の範囲】[Claims] 1 記録媒体当接面と直交する強磁性体基板の一面に、
記録媒体当接面と平行に溝を設け、前記溝中にバイアス
コイル用非磁性導電層を配設し、前記溝を非磁性体絶縁
材料で充填して平坦化し、前記溝を橋絡するように複数
の磁気抵抗効果素子を配し、少なくとも前記磁気抵抗効
果素子の記録媒体当接面側の一端に前記強磁性体基板と
の間にギャップを有する磁束収束コアを設け、かつ、前
記非磁性導電層が複数の磁気抵抗効果素子に共通である
ことを特徴とする多素子磁気ヘッド。
1 On one side of the ferromagnetic substrate perpendicular to the recording medium contact surface,
A groove is provided parallel to the recording medium contact surface, a nonmagnetic conductive layer for a bias coil is disposed in the groove, the groove is filled with a nonmagnetic insulating material to flatten it, and the groove is bridged. a plurality of magnetoresistive elements are disposed in the magnetoresistive element, a magnetic flux convergence core having a gap with the ferromagnetic substrate is provided at least at one end of the magnetoresistive element on the recording medium contacting surface side, and the non-magnetic A multi-element magnetic head characterized in that a conductive layer is common to a plurality of magnetoresistive elements.
JP13535575A 1975-11-10 1975-11-10 Tasoshijiki head Expired JPS592089B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13535575A JPS592089B2 (en) 1975-11-10 1975-11-10 Tasoshijiki head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13535575A JPS592089B2 (en) 1975-11-10 1975-11-10 Tasoshijiki head

Publications (2)

Publication Number Publication Date
JPS5258907A JPS5258907A (en) 1977-05-14
JPS592089B2 true JPS592089B2 (en) 1984-01-17

Family

ID=15149805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13535575A Expired JPS592089B2 (en) 1975-11-10 1975-11-10 Tasoshijiki head

Country Status (1)

Country Link
JP (1) JPS592089B2 (en)

Also Published As

Publication number Publication date
JPS5258907A (en) 1977-05-14

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