JPS5922375B2 - Kinzokuhimakunokeiseihouhou - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a metal film, and more particularly, to a method for forming a metal film in which a predetermined metal pattern is selectively formed on a substrate such as glass or metal.

Conventionally, as a method for producing a predetermined metal pattern on a substrate such as glass or metal, a metal film is grown in a vapor phase over the entire surface of the substrate according to a conventional method, and a film such as KPR, KTFR, etc. is deposited on this metal film. A photosensitive resin is applied, and then, for example, a 7-otomask patterned with chromium is closely attached to a glass substrate, ultraviolet rays are irradiated through the 7-otomask, and a window is opened in the photoresist through development treatment. A common method is to perform etching using a mask as a mask to generate a predetermined metal pattern on a substrate.

The inventor did not use photoresist.

We are conducting intensive research on methods of forming metal films that create predetermined metal patterns on substrates such as glass or metal.
The present invention has been successfully developed. The method for forming a metal film according to the present invention includes vapor-phase growing a titanium oxide insulating film on a substrate, irradiating the insulating film with ultraviolet rays in a predetermined pattern to alter the quality of the irradiated portion of the insulating film, and Next, this insulating film is treated with a hydrofluoric acid etching solution to remove the non-irradiated parts of the insulating film, and then a metal film is applied, and then the irradiated parts of the insulation film are removed and the exposed parts are placed on the substrate. It consists of forming a metal film in a predetermined pattern.

Hereinafter, the method for treating a metal film of the present invention will be explained in detail with reference to the accompanying drawings.

As shown in FIG. 1, an insulating film 11 of titanium oxide (TiO2) is grown in a low temperature vapor phase on a substrate 10 made of glass or metal.

This insulating film 11 can be grown on the substrate 10 in a vapor phase with little damage at 150° C. or less, for example, by a vapor phase growth reaction shown by the following formula. 100℃ TIOI4+.

21-→TiO2... (1) The insulating film grown in such a low amount in vapor phase is porous, and the etching rate accelerates faster than that grown at high temperatures.However, this When a film is irradiated with extra-vocal radiation, the film quality of the irradiated area changes and the etching rate becomes slower than that of a non-irradiated film.

In the present invention, taking advantage of such properties, a predetermined pattern of radiation (ultraviolet) 12 is applied onto the insulating film 11, and the irradiation portion 13
(Figure 2). This irradiation can be easily carried out, for example, by passing through a photomask on which a metal is patterned in a predetermined pattern on a glass substrate.
An irradiated portion Sl3 and a non-irradiated portion 14 are generated (FIG. 1).
However, as mentioned above. The irradiated area 13 and the non-irradiated area 1
Since the film quality of No. 4 has a difference in etching speed, this difference is used to remove the non-irradiated portion 14 by etching (W
, 3. This etching process is... This can be carried out using a hydrofluoric acid etching solution, and the concentration of hydrofluoric acid (HP), treatment time, etc. can be appropriately selected by those skilled in the art.
Next, silicon (S1) is applied to the substrate 10 on which the insulating film 13 of the irradiated portion has been patterned. Chromium (Cr), lead (Pb)
A metal film 15 such as the following is grown in a low temperature vapor phase (FIG. 4).

The low-temperature vapor phase growth of this metal is... For example, the following formula <<5}-(7
) The substrate 10 and the insulating film 1 are formed by a gas phase chemical reaction shown in
It is possible to perform vapor phase growth on 3. In addition, metal film 1
5 is K, tin (8nχ tungsten (W),
Gold (Au), molybdenum (MO), and the like can also be grown in a vapor phase.

The vapor phase growth reaction of these metal films is generally performed using hydrogen (H2), nitrogen (
It is carried out in a gas atmosphere such as N2). Next, this is used as an etching solution that etches the insulating film 13 but does not etch the metal film 15. Said SlO,,TlO! ,F●
, 03, Ta, 0, for example, ammonium fluoride (NH4F) 200Cf] + 11! (HF) Jusui 30
The insulating film 13 (and the metal film 15 attached on the insulating film 13) is etched with an etching solution having a ratio of 0 (CC).
A predetermined pattern of metal film 15 is formed on the substrate 10.
A patterned version is generated (Fig. 5).

In this way, the substrate 103. A pattern corresponding to the pattern of the non-irradiated portion 14 of the insulating film can be patterned. By following the method of the present invention. For example, it is possible to suitably manufacture a mask for manufacturing a semiconductor device (photomask) in which metal is patterned on a glass substrate.

especially. According to the present invention. It does not require the use of large-scale equipment such as electron beam exposure equipment in addition to the electron beam,
It has the advantage that a desired pattern can be drawn extremely easily by light irradiation.

below. The present invention will be further explained with reference to Examples.

Example 80 [°C] TiCι, -I-O, ---→TIO! on a glass substrate.
Due to the reaction of. An insulating film (thickness: 0.2 μm) consisting of a titanium oxide film with irregular drops was grown in a vapor phase.

Next, on top of this insulating film, a photo film made by patterning chrome in a predetermined pattern on glass was placed. 20 to 3 UV rays with an intensity of 2 to 4 [W/1] from above. It is irradiated for minutes to change the quality of the insulating film in the unmasked areas. Add this to an etching solution (composition: 1 part hydrofluoric acid to 100 parts water)
0 solution) for 1 to 2 minutes to remove only the non-irradiated parts of the extremely dense film. On the selectively left insulating film and the exposed substrate, monosilane (S1H4) was excited with a Takaoka wave under reduced pressure of about 0.5 lHg to form a plasma state, and silicon was grown in a vapor phase.

The thickness of the silicon film obtained was 0.1 μm. Next, add this to an etching solution (composition: etherediamine 2.
oCcc] + Pyrocatechol 10ct] Jusui IOCC
C] for 2 minutes. Remove the irradiated part of the insulating film and the silicone film attached to it. A predetermined silicon film pattern was formed on the Guts substrate.

[Brief explanation of drawings]

Figures 1 to 5 show each process and process of the metal coating treatment method of the present invention.
FIG. 10...duplicate, 11...quantum sickle film,,
2...Light, 1 3...Irradiated area of Zettai Kama membrane, 14...Non-irradiated area of Grape membrane, 1 5.
...Metal film.

Claims (1)

[Claims] 1 A titanium oxide insulating film is grown in a vapor phase on a substrate, this insulating film is irradiated with ultraviolet rays in a predetermined pattern to change the quality of the irradiated part of the insulating film, and then this insulating film is exposed to a hydrofluoric acid etching solution. to remove the non-irradiated parts of the insulating film, depositing a metal film, and then removing the irradiated parts of the insulating film to form a metal film in a predetermined pattern on the substrate. A method for forming a metal film characterized by: