JPS592373B2 - Manufacturing method of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and in particular, by cleaning with a surfactant after electrodeposition, glass particles adhering to an insulating film are removed, and photoetching is completely completed. The present invention relates to a method for manufacturing a semiconductor device that allows for.

Generally, an electrophoresis method is used to passivate the surface of a semiconductor with glass. In this electrophoresis method, unnecessary parts of the glass film are masked in advance with an insulating film such as SiO2, and a part of the surface of the semiconductor is masked. This is a technique used when selectively attaching glass to.

However, when a semiconductor wafer is immersed in a glass suspension, glass particles also adhere to the insulating film. Glass is generally much easier to etch than photoresist, so if you try to perform the next photoetching process while leaving glass particles on the insulating film, only the glass particles embedded in the photoresist will be etched, creating holes in the resist. This will cause holes or depressions to occur at the periphery of the resist, and the insulating film at these locations will be etched. Therefore, it becomes absolutely necessary to remove the glass particles on the insulating film. In order to remove these glass particles, conventionally, ultrasonic cleaning was carried out using a solution with a high dielectric constant such as acetone isopropanol after electrodeposition, but this method removes the originally necessary glass film adsorbed onto the surface of the semiconductor. It also had the disadvantage of being damaged.

In addition, there is a method of making the surface of the insulating film hydrophobic before electrodeposition, and this method can be expected to be quite effective if it is combined with acetone cleaning after electrodeposition, but it is slow in terms of process yield. Looking at it from above, it can't be said to be perfect. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to reliably remove unnecessary glass particles on an insulating film without damaging the glass film adsorbed on the semiconductor surface. An object of the present invention is to provide a method for manufacturing a semiconductor device in which photoetching can be completely performed.

Accordingly, a method for manufacturing a semiconductor device according to the present invention that achieves the above object includes forming an insulating protective film on the surface of a semiconductor substrate, and then subjecting the protective film to a photoetching process to expose a part of the semiconductor substrate. Next, glass is selectively deposited on the exposed surface of the semiconductor substrate by electrodeposition, and then the semiconductor substrate on which the glass particle layer is formed is soaked in a surfactant solution to remove the glass particles deposited on the insulating film. It is characterized by the fact that

A method for manufacturing a semiconductor device according to the present invention will be explained below with reference to the drawings.

(a) A silicon substrate 1 is prepared, and an insulating protective film 2 made of SlO2 or the like is deposited on the surface of the silicon substrate 1.

(b) Photoetching is performed on the protective film 2 on the surface of the silicon substrate 1 to partially remove the protective film 2.

(c) Glass 3 is then selectively deposited on silicon substrate 1 using electrodeposition technology.

At this time, glass particles 4 adhere to the protective film 2. (d)
The semiconductor substrate on which the glass particle layer is formed is soaked in a surfactant solution (an aqueous solution or an organic solvent solution such as acetone) to remove the glass particles on the insulating film 2.

(e) Dry in a drying oven.

In the present invention, the removal of unnecessary glass particles is difficult because unnecessary glass particles are also baked onto the surface of the insulating film after the glass is dried and subjected to a thermal history for firing. It becomes impossible to remove glass at all.

As is clear from the above description, according to the present invention, the semiconductor substrate on which the glass particle layer is formed is soaked in an aqueous surfactant solution or an organic solvent solution such as acetone immediately after electrodeposition. Only the glass particles adhering to the film can be removed, and as a result, it is possible to reduce photoetching defects after the glass film is formed, and the characteristics and yield of semiconductor devices can be improved.

[Brief explanation of drawings]

In the figure, a to d are process diagrams showing a method for manufacturing a semiconductor device according to the present invention. 1... Silicon substrate, 2... Protective film,
3...Glass, 4...Glass particles.

Claims (1)

[Claims] 1. After forming an insulating protective film on the surface of a semiconductor substrate, a photoetching process is performed on the protective film to expose a part of the semiconductor substrate, and then an electric current is applied to the exposed surface of the semiconductor substrate. In a method that includes a step of selectively adhering glass by adhesion to form a glass particle layer, after the step, the semiconductor substrate on which the glass particle layer is formed is infiltrated with a surfactant solution, and the glass adhered on the insulating film. A method for manufacturing a semiconductor device, characterized by removing particles. 2. The method according to claim 1, wherein the surfactant solution is an aqueous solution or an organic solvent solution.