JPS5928988B2 - Evaluation method for metal corrosion - Google Patents
Evaluation method for metal corrosionInfo
- Publication number
- JPS5928988B2 JPS5928988B2 JP56189077A JP18907781A JPS5928988B2 JP S5928988 B2 JPS5928988 B2 JP S5928988B2 JP 56189077 A JP56189077 A JP 56189077A JP 18907781 A JP18907781 A JP 18907781A JP S5928988 B2 JPS5928988 B2 JP S5928988B2
- Authority
- JP
- Japan
- Prior art keywords
- corrosion
- reflectance
- sample
- wavelength
- reflectance curve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
この発明は、ICにおけるメタルパターンの腐食評価に
用いられる金属腐食の評価方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a metal corrosion evaluation method used for evaluating corrosion of metal patterns in ICs.
ICにおける従来のAt腐食の評価方法を第1図により
説明する。A conventional method for evaluating At corrosion in an IC will be explained with reference to FIG.
まず、評価すべきサソプルをチップに分割し、組立てる
(第1図a)。次に、組立てたサンプルをプレツシヤー
クツカーテストにかける(第1図b)。その間、定期的
に電気的特性、たとえば回路機能、素子特性、メタル抵
抗などを測定する(第1図c)。最後に、測定データか
らMTTF(meantimetofailure)や
メデアンライフを算出し、At腐食に対する定量評価を
行う(第1図d)。しかるに、この方法では、サンプル
を組立てて評価するので、結果をだすのに非常に時間が
かかる欠点があつた。First, the sasopuru to be evaluated is divided into chips and assembled (Fig. 1a). Next, the assembled sample is subjected to the pressure-jerker test (FIG. 1b). During this period, electrical characteristics such as circuit function, element characteristics, metal resistance, etc. are periodically measured (FIG. 1c). Finally, MTTF (mean time failure) and median life are calculated from the measurement data, and quantitative evaluation of At corrosion is performed (Fig. 1d). However, this method has the disadvantage that it takes a very long time to produce results because samples are assembled and evaluated.
この発明は上記の点に鑑みなされたもので、ICKおけ
るメタルパターンの腐食評価を、ウェーハ状態で短時間
に行うことができる金属腐食の評価方法を提供すること
を目的とする。The present invention has been made in view of the above points, and an object of the present invention is to provide a metal corrosion evaluation method that can evaluate corrosion of a metal pattern in an ICK in a wafer state in a short time.
以下この発明の実施例を図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
第2図はこの発明の第1の実施例を示す図である。FIG. 2 is a diagram showing a first embodiment of the invention.
この図に示すように、第1の実施例では、まず、ウェー
ハ状態のサンプルをプレツシヤークツカーテストに、た
とえば120℃、2Ay/Cd、50Hの条件でかける
(第2図a、b)。その後、そのサンプルの反射率曲線
を測定する(第2図c)。反射率曲線の測定装置が第3
図に示されている。この装置について説明すると、1は
W(タングステン)または重水素ランプであり、このラ
ンプ1からの光はグレーテイング分光器2により単色化
された後、回転鏡3によりダブルビームVC2分割され
る。一方の光4は反射鏡61、62を経て検知器Tに直
接入射される。他方の光5は反射鏡60、ハーフミラー
8、対物レンズ9を経てサンプル10に入射される。そ
して、サソブル10で反射した光は再び対物レンズ9、
ハーフミラー8を透過して検知器7に入るようになつて
おり、検知器7は、光4と光5の強度の比を測定して、
その結果を表示装置11VC.表示させる。な}、この
ような反射率曲線測定装置には、サンブル10に対する
焦点合わせのための照明装置13が設けられている。ま
た、サンプル10を観察するための図示しない顕微鏡が
設けられている。以上の装置による測定を具体的に述べ
ると、まず、照明装置13によりサンブル10を照射し
、顕微鏡によりたとえばボンデイングパツドに焦点を合
わせる。As shown in this figure, in the first embodiment, a sample in a wafer state is first subjected to a pressure vacuum test under conditions of, for example, 120° C., 2Ay/Cd, and 50H (FIGS. 2a and 2b). Thereafter, the reflectance curve of the sample is measured (FIG. 2c). The third reflectance curve measurement device
As shown in the figure. To explain this device, 1 is a W (tungsten) or deuterium lamp, and the light from this lamp 1 is made monochromatic by a grating spectrometer 2, and then divided into double beams VC by a rotating mirror 3. One of the lights 4 passes through reflecting mirrors 61 and 62 and is directly incident on the detector T. The other light 5 is incident on the sample 10 via a reflecting mirror 60, a half mirror 8, and an objective lens 9. Then, the light reflected by the susable 10 is returned to the objective lens 9,
The light passes through a half mirror 8 and enters a detector 7, and the detector 7 measures the ratio of the intensities of the light 4 and the light 5.
The results are displayed on the display device 11VC. Display. Such a reflectance curve measuring device is provided with an illumination device 13 for focusing the sample 10. Further, a microscope (not shown) for observing the sample 10 is provided. To describe the measurement using the above device in detail, first, the sample 10 is irradiated by the illumination device 13, and the focus is focused on, for example, a bonding pad using a microscope.
次に、照明装置13を切り、少なくとも波長400〜5
00nmの分光した光5をサンブル10に照射し、その
反射率曲線を測定する。このようにして反射率曲線を測
定したならば、次に、その反射率曲線から、波長400
nmでの反射率R4OOと波長500nmでの反射率R
,OOによりΔR=(R4OO−R,OO)/R5OO
を算出し、ΔRの大小関係により腐食度の定量評価をす
る(第2図d)。ΔRにより腐食度を評価する理由を以
下に述べる。Next, the illumination device 13 is turned off, and the wavelength of at least 400 to 5
The sample 10 is irradiated with light 5 having a wavelength of 00 nm, and its reflectance curve is measured. Once the reflectance curve has been measured in this way, next, from the reflectance curve, the wavelength 400
Reflectance R4OO at nm and reflectance R at wavelength 500 nm
,OO, ΔR=(R4OO−R,OO)/R5OO
is calculated, and the degree of corrosion is quantitatively evaluated based on the magnitude relationship of ΔR (Fig. 2 d). The reason for evaluating the degree of corrosion using ΔR will be described below.
第4図は種々のサンプルの反射率曲線である。曲線aは
、腐食していないAtの反射率曲線で、波長が短くなる
につれて単調に減少していく特性をもつ。一方、これを
、プレツシヤークツカーテストPCTで腐食させると、
腐食程度に応じて反射率曲線B,c,dとなる。これは
、次のように説明できる。第5図は、第4図の反射率曲
線A,b,c,dのサンプル上での反射光の挙動を模式
的に示した図である。FIG. 4 shows reflectance curves for various samples. Curve a is a reflectance curve of uncorroded At, which has a characteristic that it decreases monotonically as the wavelength becomes shorter. On the other hand, if this is corroded using the pressure tester test PCT,
Reflectance curves B, c, and d are obtained depending on the degree of corrosion. This can be explained as follows. FIG. 5 is a diagram schematically showing the behavior of reflected light on the sample of reflectance curves A, b, c, and d in FIG. 4.
第5図aに示すように、Si基板15上のAtが腐食し
ていない場合は、そのSkindepthが小さいので
Atl4の極く表面で入射光16が反射し、Atl4表
面の反射光17だけが第3図装置の検知器7に入り、A
tの反射率曲線(第4図の曲線a)となる。一方、腐食
されると、j第5図B,cに示すようにAt表面にAt
(0H)3などの腐食層19が形成されるので、反射光
は、腐食層19表面からの反射光18と残留Atl4′
表面からの反射光17′,1rの両方となり、干渉を起
す。しかし、残留Atl4′表面からのz反射光17′
,17Iは腐食層19の厚さに応じて吸収効果のための
減衰される。よつて、第5図cのように腐食層19が厚
いと、残留Atl4′表面からの反射光17Iの強度は
、第5図bの腐食層19が薄い場合の反射光17′に比
べて弱くなる.また、勿論、反射光17′は、腐食がな
い時のAtl4からの反射光17に比べて弱い。以上か
ら、腐食が生じた場合の反射特性は、腐食層表面の反射
特性と残留Al表面の反射特性の合わさつた特性となる
。この場合、腐食層が厚ければ、両方の成分のうち、腐
食層表面の反射特性がより支配的になる。したがつて、
腐食が生じた場合でも、第5図bと第5図cとでは反射
率曲線は異なり、第5図bの場合は第4図の曲線b1第
5図cの場合は第4図の曲線cとなる。次に、腐食が進
んで、第5図dに示すようにAtが全て腐食層19に変
つてしまつた場合は、腐食層19表面からの反射光18
だけとなり、反射率曲線は、Atの反射率曲線(第4図
の曲線a)と異なつた第4図の曲線dとなる。な訃、A
t(0H)3からなる腐食層の反射特性は、波長450
nm付近から増加していく。以上のようVCAt腐食の
程度に応じて反射率曲線が変化していく点を利用するた
めに、干渉効果がみられなくなる波長500nmでの反
射率R,OOと、At腐食の程度により反射率が最も変
化する波長400nmでの反射率R4OOより、ΔR=
(R4OO−R5OO)/R,OOを腐食度評価のパラ
メータとした。As shown in FIG. 5a, when At on the Si substrate 15 is not corroded, its skin depth is small, so the incident light 16 is reflected at the very surface of Atl4, and only the reflected light 17 from the surface of Atl4 is reflected at the surface of Atl4. Enter the detector 7 of the device in Figure 3, A
t (curve a in FIG. 4). On the other hand, when corroded, At
Since the corrosion layer 19 such as (0H)3 is formed, the reflected light is divided into the reflected light 18 from the surface of the corrosion layer 19 and the residual Atl4'
Both of the reflected lights 17' and 1r from the surface cause interference. However, the z reflected light 17' from the surface of the residual Atl4'
, 17I are attenuated depending on the thickness of the corrosion layer 19 due to absorption effects. Therefore, when the corrosion layer 19 is thick as shown in FIG. 5c, the intensity of the reflected light 17I from the surface of the residual Atl 4' is weaker than that of the reflected light 17' when the corrosion layer 19 is thin as shown in FIG. 5b. Become. Also, of course, the reflected light 17' is weaker than the reflected light 17 from Atl4 when there is no corrosion. From the above, the reflection characteristics when corrosion occurs are a combination of the reflection characteristics of the corroded layer surface and the reflection characteristics of the residual Al surface. In this case, if the corroded layer is thick, the reflective properties of the corroded layer surface become more dominant of both components. Therefore,
Even if corrosion occurs, the reflectance curves in Figures 5b and 5c are different; in the case of Figure 5b, the curve b in Figure 4 is the same, and in the case of Figure 5c, the curve c in Figure 4 is different. becomes. Next, when the corrosion progresses and all At turns into a corrosion layer 19 as shown in FIG. 5d, the reflected light 18 from the surface of the corrosion layer 19
Therefore, the reflectance curve becomes curve d in FIG. 4, which is different from the reflectance curve of At (curve a in FIG. 4). A deceased person, A
The reflection characteristics of the corrosion layer consisting of t(0H)3 are at a wavelength of 450
It increases from around nm. In order to utilize the point that the reflectance curve changes according to the degree of VCAt corrosion as described above, the reflectance R, OO at a wavelength of 500 nm where no interference effect is observed, and the reflectance depending on the degree of At corrosion are determined. From the reflectance R4OO at the wavelength of 400 nm where it changes the most, ΔR=
(R4OO−R5OO)/R,OO was used as a parameter for corrosion degree evaluation.
以上のように、第1の実施例では、プレッシャークツカ
ーテストにかけた後のサンプルの反射率曲線を測定し、
その反射率曲線から、波長400nmでの反射率R4O
Oと波長500nmでの反射率R5OOによりΔRO(
R4OO−R5OO)/R,OOの算出を行つて、ΔR
の大小関係により腐食度の定量評価を行うようにしたの
で、ICに卦けるメタルパターンの腐食評価を、ウエー
ハ状態で短時間に行うことができる。As described above, in the first example, the reflectance curve of the sample after being subjected to the pressure Kutzker test was measured,
From the reflectance curve, the reflectance R4O at a wavelength of 400 nm
ΔRO(
By calculating R4OO-R5OO)/R,OO, ΔR
Since the degree of corrosion is quantitatively evaluated based on the magnitude relationship of , it is possible to evaluate the corrosion of metal patterns on ICs in a short time on a wafer.
第1の実施例はΔR値により腐食度の評価ができること
を説明したが、第4図の反射率曲線cで示される長波長
側の干渉波を使つても腐食層の厚みの大小関係から腐食
度の定量評価ができる。In the first embodiment, it was explained that the degree of corrosion can be evaluated using the ΔR value, but even if interference waves on the long wavelength side shown by the reflectance curve c in Fig. 4 are used, corrosion can be evaluated based on the relationship between the thickness of the corroded layer. It is possible to quantitatively evaluate the degree of
そのようにしたのが第2の実施例であり、この場合は、
サンブルをプレツシヤークツカーテストにかけた後、サ
ンブルの反射率曲線を第3図の装′
1置で測定し、そ
の反射率曲線からd=?2nΔK
(ただし、n:腐食層の屈折率、ΔK;干渉ピ一ク間の
波数差)を算出し、腐食層の厚みdの大小関係から腐食
度の定量評価を行う。This is the second embodiment, and in this case,
After subjecting the sample to the Pressure-Jakutsker test, the reflectance curve of the sample was determined using the equipment shown in Figure 3.
Measured at one position, and from the reflectance curve, d=? 2nΔK (where n: refractive index of the corroded layer, ΔK: wave number difference between interference peaks) is calculated, and the degree of corrosion is quantitatively evaluated based on the magnitude relationship of the thickness d of the corroded layer.
この第2の実施例によつても、前記第1の実施例と同様
の効果を得ることができる。以上詳述したように、この
発明にお・いては、サンプルをブレツシヤークツカーテ
ストにかけた後、そのサンプルの反射率曲線を測定し、
その反射率曲線から、波長λ,での反射率Rλ,と波長
λ2Rλ,−Rλ2での反射率Rλ2よりΔR=?の算
Rλ一
屈折率、ΔK;干渉ピーク間の波数差)の算出を行い、
ΔRまたは腐食層の厚みdの大小関係により腐食度の定
量評価を行うようにしたので、Cにおけるメタルパター
ンの腐食評価を、ウエーハ状態で短時間に行うことがで
きる。This second embodiment also provides the same effects as the first embodiment. As detailed above, in the present invention, after subjecting a sample to the Brassier Kutzker test, the reflectance curve of the sample is measured,
From the reflectance curve, ΔR=? Calculate Rλ - refractive index, ΔK: wave number difference between interference peaks),
Since the degree of corrosion is quantitatively evaluated based on the magnitude relationship of ΔR or the thickness d of the corrosion layer, the corrosion evaluation of the metal pattern at C can be performed in a short time in the wafer state.
したがつて、この発明は、メタル腐食に及ぼす種々の要
因や解析や、メタルドライエツチの際に一般に吸着する
腐食物を除去するための後処理の効果の評価に利用する
ことができる。Therefore, the present invention can be used to analyze various factors affecting metal corrosion, and to evaluate the effectiveness of post-treatment for removing corrosive substances that are generally adsorbed during metal dry etching.
第1図は従来のAt腐食の評価方法の手順を示す図、第
2図はこの発明の金属腐食の評価方法の第1の実施例の
手順を示す図、第3図は反射率曲線測定装置を示す構成
図、第4図は第3図の装置を用いて測定した反射率曲線
の代表例を示す図、第5図は第4図の反射率曲線のサン
プル上での反射光の挙動を模式的に示す図である。
1・・・ランプ、4,5・・恍、7・・検知器、10・
・・サンプル。Fig. 1 is a diagram showing the procedure of the conventional At corrosion evaluation method, Fig. 2 is a diagram showing the procedure of the first embodiment of the metal corrosion evaluation method of the present invention, and Fig. 3 is a reflectance curve measuring device. Fig. 4 is a diagram showing a typical example of a reflectance curve measured using the apparatus shown in Fig. 3, and Fig. 5 shows the behavior of reflected light on a sample of the reflectance curve in Fig. 4. It is a figure shown typically. 1... Lamp, 4, 5... Shu, 7... Detector, 10...
··sample.
Claims (1)
評価したいサンプルを先ずプレツシヤークツカーテスト
PCTにかけ、次にそのサンプルの反射率曲線を測定し
、その反射率曲線から、波長λ_1での反射率Rλ_1
と波長λ_2での反射率Rλ_2によりΔR=(Rλ_
1−Rλ_2)(Rλ_2)を算出し、そのΔRの大き
さにより腐食度を評価することを特徴とする金属腐食の
評価方法。 2 波長λ_1が400nm、波長λ_2が500nm
であることを特徴とする特許請求の範囲第1項記載の金
属腐食の評価方法。 3 ICにおけるメタルパターンの腐食評価において、
評価したいサンプルを先ずプレツシヤークツカーテスト
PCTにかけ、次にそのサンプルの反射率曲線を測定し
、その反射率曲線からd=(1)/(2nΔK)(ただ
し、n;腐食層の屈折率、ΔK=干渉ピーク間の波数差
)を算出し、腐食層の厚みdの大小関係から腐食度を評
価することを特徴とする金属腐食の評価方法。[Claims] 1. In metal evaluation of metal patterns in IC,
First, the sample to be evaluated is subjected to the Pressure Schucker Test PCT, then the reflectance curve of the sample is measured, and from the reflectance curve, the reflectance Rλ_1 at the wavelength λ_1 is calculated.
and reflectance Rλ_2 at wavelength λ_2, ΔR=(Rλ_
1-Rλ_2) (Rλ_2) and evaluating the degree of corrosion based on the magnitude of ΔR. 2 Wavelength λ_1 is 400 nm, wavelength λ_2 is 500 nm
A method for evaluating metal corrosion according to claim 1, characterized in that: 3 In evaluating corrosion of metal patterns in ICs,
First, the sample to be evaluated is subjected to the Pressure Schucker Test PCT, and then the reflectance curve of the sample is measured. From the reflectance curve, d = (1) / (2nΔK) (where n: the refractive index of the corroded layer) , ΔK=wave number difference between interference peaks), and evaluates the degree of corrosion based on the relationship between the thickness d of the corrosion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56189077A JPS5928988B2 (en) | 1981-11-27 | 1981-11-27 | Evaluation method for metal corrosion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56189077A JPS5928988B2 (en) | 1981-11-27 | 1981-11-27 | Evaluation method for metal corrosion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5891655A JPS5891655A (en) | 1983-05-31 |
| JPS5928988B2 true JPS5928988B2 (en) | 1984-07-17 |
Family
ID=16234917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56189077A Expired JPS5928988B2 (en) | 1981-11-27 | 1981-11-27 | Evaluation method for metal corrosion |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928988B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332900A (en) * | 1993-02-16 | 1994-07-26 | Exxon Research & Engineering Co. | On-line corrosivity monitor for petroleum products |
| US10107686B1 (en) | 2014-03-03 | 2018-10-23 | Ayalytical Instruments, Inc. | Vision strip analyzer |
| CN111710618B (en) * | 2020-07-15 | 2021-10-12 | 广芯微电子(广州)股份有限公司 | Method for detecting defects of passivation layer of wafer |
-
1981
- 1981-11-27 JP JP56189077A patent/JPS5928988B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5891655A (en) | 1983-05-31 |
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