JPS5929924B2 - transparent conductive electrode - Google Patents
transparent conductive electrodeInfo
- Publication number
- JPS5929924B2 JPS5929924B2 JP49050402A JP5040274A JPS5929924B2 JP S5929924 B2 JPS5929924 B2 JP S5929924B2 JP 49050402 A JP49050402 A JP 49050402A JP 5040274 A JP5040274 A JP 5040274A JP S5929924 B2 JPS5929924 B2 JP S5929924B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- thin film
- conductive electrode
- forming
- ion plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
本発明は可視光線に対して透明で電気伝導性のある薄膜
の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a thin film that is transparent to visible light and electrically conductive.
更に詳しくは不活性ガス、または反応性ガス雰囲気中で
被処理物体と対極の間にグロー放電を行ない、イオンブ
レーティングによつて被処理物体上に強固な透明電導性
薄膜を形成した電極であり、微密かつ強固な密着性を有
することを目的とするものである。従来、透明電導性薄
膜はＥＬや、螢光体薄膜を発光させたり、窓ガラスの防
曇やディジタルの表示体として応用される液晶表示パネ
ルの電極として広範に用いられている。ｓｎｏ２は最も
代表的な透明電導性薄膜であり、これは噴霧法によつて
製造される。ガラス基板を５００〜６００℃に加熱して
おき、大気中で噴霧器で吹きつけて以下の反応によつて
薄膜を形成する。More specifically, it is an electrode in which a glow discharge is performed between the object to be treated and a counter electrode in an inert gas or reactive gas atmosphere, and a strong transparent conductive thin film is formed on the object by ion blating. The purpose is to have fine and strong adhesion. Hitherto, transparent conductive thin films have been widely used as electrodes for liquid crystal display panels, which are used to make EL and phosphor thin films emit light, to defog window glass, and to serve as digital displays. sno2 is the most typical transparent conductive thin film, and is manufactured by a spraying method. A glass substrate is heated to 500 to 600°C and sprayed in the atmosphere with a sprayer to form a thin film by the following reaction.
ＳｎＣｌ４＋２Ｈ２０→ＳｎＯ２＋ ４ＨＣｌこの方式
はソーダガラス上では薄膜が厚くなると亀裂を生じたり
、ホウケイ酸ガラスの基板を使用するとコストアップと
なる。SnCl4+2H20→SnO2+ 4HCl In this method, cracks occur when the thin film becomes thick on soda glass, and costs increase when a borosilicate glass substrate is used.
また塩酸臭や酢酸臭あるいはＳｂの如き添加剤を使用し
、面積抵抗を下げたりするため作業環境が著しく悪く、
近年他の方法が提案されているが、いずれも量産方式が
確立されていない。蒸着、スパッタリング方式やグロー
放電中での酸化方式が考えられる。また同じ蒸着（また
はスパッタリング）よりの出発にプラスチック基板上の
ＡＵ−Ｂｉ２Ｏ３の多層膜が提案されているが機械的に
弱く、光線透過率も面積抵抗を考慮した場合、７５％以
下と低く実用化はされていない。本発明はかかる欠点を
解消し、基板への密着性を上昇し、さらにプラスチック
基板上においても９０％以上の光線透過率を有し、密着
性の優れた透明電導薄膜を形成せしめるものである。In addition, the use of hydrochloric acid, acetic acid, and additives such as Sb to lower the sheet resistance creates an extremely poor working environment.
Other methods have been proposed in recent years, but mass production methods have not been established for any of them. Possible methods include vapor deposition, sputtering, and oxidation during glow discharge. In addition, a multilayer film of AU-Bi2O3 on a plastic substrate has been proposed starting from the same vapor deposition (or sputtering), but it is mechanically weak and has a low light transmittance of 75% or less when taking sheet resistance into consideration. Not done. The present invention eliminates these drawbacks, improves adhesion to substrates, and furthermore forms a transparent conductive thin film with excellent adhesion and a light transmittance of 90% or more even on plastic substrates.
以下、実施例により説明する。Examples will be explained below.
実施例
アクレデグリユールカーボネート樹脂、アクリル樹脂透
明板を第１図に示すような高周波イオンブレーティング
装置により２μガラスをコーティングした。EXAMPLE A transparent plate made of Acre de Glyur carbonate resin and acrylic resin was coated with 2μ glass using a high frequency ion blating device as shown in FIG.
第１図中、１がΘ極、２がΘ極兼蒸発源、３が被蒸着物
の前記透明板、４がガス導入口、５が高周波コイル、６
が静電遮蔽板である。In FIG. 1, 1 is a Θ pole, 2 is a Θ pole and evaporation source, 3 is the transparent plate of the object to be deposited, 4 is a gas inlet, 5 is a high frequency coil, 6
is an electrostatic shielding plate.
この装置内の真空度は２×１０−５Ｔｏｒｒである。本
コーティングガラスは従来の蒸着方式では得られない密
着性を有している。さらにその基板上に感光性樹脂（レ
ジスト）膜により電極パターンを構成し、再度高周波イ
オンブレーティングによりアルゴンと酸素の混合ガスを
導入し、ペンシャー内の真空度を１×１０−５Ｔ０ｒｒ
とし、ＳｎＯ２を被着せしめ、こうして前記ブラスチツ
ク基板上に酸化スズ膜による透明電導性薄膜を形成し、
有機物質上に透明電導電極を製造した。この電極をパタ
ーニングするのは周知の如く前記レジストを剥離するこ
とによる。従来法では有機物質上の密着性は温度を上昇
できないことから実用に耐える密着強度を得ることがで
きなかつたが、本発明では充分に実用できる電極が得ら
れた。以上、実施例に示した如く、プラスチツク基板上
に強固な透明電極が形成でき、実施例以外のイオンブレ
ーテイング例えば多陰極方式やクラスタイオンビームイ
オンプレーテイングなども全く同様の効果が得られるも
のである。The degree of vacuum within this apparatus is 2 x 10-5 Torr. This coated glass has adhesion that cannot be obtained with conventional vapor deposition methods. Furthermore, an electrode pattern is formed on the substrate using a photosensitive resin (resist) film, and a mixed gas of argon and oxygen is introduced again by high-frequency ion blasting, and the degree of vacuum in the penciler is reduced to 1 x 10-5T0rr.
and depositing SnO2, thus forming a transparent conductive thin film of tin oxide on the plastic substrate,
Transparent conductive electrodes were fabricated on organic materials. This electrode is patterned by peeling off the resist, as is well known. In the conventional method, it was not possible to obtain adhesion strength on an organic material because the temperature could not be increased, but in the present invention, an electrode that could be used sufficiently for practical use was obtained. As shown in the examples above, a strong transparent electrode can be formed on a plastic substrate, and ion plating other than the examples, such as multi-cathode method or cluster ion beam ion plating, can also achieve exactly the same effect. be.
本発明は、新規なしかも作業環境の改善、コストダウン
など工業的に有用な発明である。INDUSTRIAL APPLICABILITY The present invention is not only novel but also industrially useful for improving the working environment and reducing costs.
第１図は高周波イオンプレーテイング装置を示す。
１・・・ｅ極、２・・・１極兼蒸発源、３・・・被蒸着
物、４・・・ガス導入口、５・・・高周波コイル、６・
・・静電遮蔽板。FIG. 1 shows a high frequency ion plating apparatus. DESCRIPTION OF SYMBOLS 1... e-pole, 2... single pole and evaporation source, 3... evaporation target, 4... gas inlet, 5... high frequency coil, 6...
...Electrostatic shielding plate.
Claims (1)
グによりガラスの薄膜を形成し、前記薄膜の表面に所定
パターンのレジスト膜を形成した後高周波イオンプレー
ティングにより透明電導性膜を形成することを特徴とす
る透明電導性電極の製造方法。1. A transparent conductive film characterized by forming a glass thin film on the surface of a plastic substrate by high-frequency ion plating, forming a resist film with a predetermined pattern on the surface of the thin film, and then forming a transparent conductive film by high-frequency ion plating. Method for manufacturing sex electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49050402A JPS5929924B2 (en) | 1974-05-07 | 1974-05-07 | transparent conductive electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49050402A JPS5929924B2 (en) | 1974-05-07 | 1974-05-07 | transparent conductive electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS50143098A JPS50143098A (en) | 1975-11-18 |
| JPS5929924B2 true JPS5929924B2 (en) | 1984-07-24 |
Family
ID=12857860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49050402A Expired JPS5929924B2 (en) | 1974-05-07 | 1974-05-07 | transparent conductive electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929924B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5179296A (en) * | 1974-12-28 | 1976-07-10 | Citizen Watch Co Ltd | Tomeidodenmakuno seizohoho |
-
1974
- 1974-05-07 JP JP49050402A patent/JPS5929924B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS50143098A (en) | 1975-11-18 |
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