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JPS5933559B2 - Single crystal manufacturing method - Google Patents
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JPS5933559B2 - Single crystal manufacturing method - Google Patents

Single crystal manufacturing method

Info

Publication number
JPS5933559B2
JPS5933559B2 JP56190590A JP19059081A JPS5933559B2 JP S5933559 B2 JPS5933559 B2 JP S5933559B2 JP 56190590 A JP56190590 A JP 56190590A JP 19059081 A JP19059081 A JP 19059081A JP S5933559 B2 JPS5933559 B2 JP S5933559B2
Authority
JP
Japan
Prior art keywords
single crystal
temperature
pulling
producing
polarization treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56190590A
Other languages
Japanese (ja)
Other versions
JPS5895690A (en
Inventor
忠雄 小見
義憲 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56190590A priority Critical patent/JPS5933559B2/en
Publication of JPS5895690A publication Critical patent/JPS5895690A/en
Publication of JPS5933559B2 publication Critical patent/JPS5933559B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Description

【発明の詳細な説明】 (1)発明の技術分野 この発明はリチウニオベート(LiNbO3)単結晶、
リチウムタンタレート(LiTa03)等の単結晶の製
造方法の改良に関する。
Detailed Description of the Invention (1) Technical field of the invention This invention relates to lithium niobate (LiNbO3) single crystal,
This invention relates to improvements in the manufacturing method of single crystals such as lithium tantalate (LiTa03).

(2)発明の技術的背景 圧電性の単結晶は単結晶材料を貴金属のるつぼに入れ、
間接又は直接加熱により結晶材料を溶解し溶融物とし、
溶融物中に種結晶を浸して引上げる過程で結晶化するこ
とにより単結晶として育成される。
(2) Technical background of the invention A piezoelectric single crystal is produced by placing a single crystal material in a noble metal crucible.
Melt the crystalline material by indirect or direct heating to form a molten material,
It is grown as a single crystal by dipping a seed crystal into the melt and crystallizing it during the pulling process.

この溶融物から引上げられた単結晶を加工してPIF用
表面波フィルターの素子、振動子、各種の圧電素子とし
て使用するためには単結晶を分極化しなければならない
。分極処理は単結晶をそのキュリー温度近傍またはそれ
以上の温度に加熱した状態で、単結晶の表面に被着した
電極に電圧を印加することにより行われる。分極処理の
ための電極は単結晶に切削加工した表面につけることも
ある。分極処理が終了した単結晶は冷却後、炉外に取り
出され、用途に応じて必要な大きさに切断され加工され
て製品化していく。
In order to process the single crystal pulled from this melt and use it as an element of a PIF surface wave filter, a vibrator, or various piezoelectric elements, the single crystal must be polarized. The polarization treatment is performed by heating the single crystal to a temperature near or above its Curie temperature and applying a voltage to an electrode attached to the surface of the single crystal. Electrodes for polarization are sometimes attached to the surface of a single crystal. After the polarization process has been completed, the single crystal is cooled and taken out of the furnace, where it is cut and processed into the required size according to the intended use and manufactured into products.

(3)背景技術の問題点 溶融物から引上げられた単結晶は概略以上のような過程
を経て分極化されるが、その過程中に単結晶がクラック
することが多い。
(3) Problems with the Background Art A single crystal pulled from a melt is polarized through the process outlined above, but the single crystal often cracks during this process.

そのクラックは、引上げた単結晶を徐冷後次の工程、即
ち電極付のための切削加工に入る前、或は切削加工中、
電極付作業中さらには工程待の放置中等あらゆる過程で
発生する。クラツクの程度は一様でなく縦に割れるもの
横割れ等種々あり、わずかでもあればその単結晶は使用
できない。又その発生率は引上げた単結晶の数を基準に
するとリチウムニオベートでおよそ90%、リチウムタ
ンタレートでおよそ60%である。
The cracks occur after the pulled single crystal is slowly cooled and before or during the next process, that is, the cutting process for attaching electrodes.
It can occur during any process such as during electrode attachment work or when left unattended while waiting for the process. The degree of cracking is not uniform and varies from vertical cracking to horizontal cracking, and if it is even slight, the single crystal cannot be used. Moreover, the occurrence rate is approximately 90% for lithium niobate and approximately 60% for lithium tantalate, based on the number of single crystals pulled.

このようなクラツクは生産コストを高めるだけでなく品
質特性低下、信頼性低下の原因となり、極力減少させな
ければならない。(4)発明の目的 この発明は単結晶引上げの後に発生するクラツクを極力
減少させ、品質良好で信頼性の高い単結晶の製造方法を
提供することを目的とする。
Such cracks not only increase production costs but also cause deterioration in quality characteristics and reliability, and must be reduced as much as possible. (4) Purpose of the Invention The object of the present invention is to provide a method for producing a single crystal of good quality and high reliability by minimizing cracks that occur after pulling the single crystal.

(5)発明の概要発明者等はリチウムニオベート単結晶
のクラツクを減少させるため種々の実験調査を行なつた
(5) Summary of the Invention The inventors conducted various experimental investigations in order to reduce cracks in lithium niobate single crystals.

まず引上げ後の単結晶を歪取りのための熱処理を行つて
みた。引上げの後、徐冷してほK室温(25℃)近くま
で冷却された単結晶を再び徐熱し、約1200℃10時
間維持した後再び徐冷を行う。このとき徐熱速度は0.
5℃/分〜5℃/分、徐冷速度も0.5℃/分〜5℃/
分まで種々の組合せで試験評価したが、熱処理をしない
ものよりも2〜3%のクラツク減少をみたものの大幅な
改善は出来なかつた。そこでさらにクラツクの発生過程
を克明に調査した結果、引上げして徐冷後単結晶の温度
を40℃未満にしたまX放置や加工を行うとクラツクが
多発し、40℃以上に維持するとクラツクは減少し特に
50℃では大幅に減少することが判明した。
First, we performed heat treatment on the pulled single crystal to remove strain. After pulling, the single crystal is slowly cooled to near room temperature (25° C.), and then the single crystal is slowly cooled again, maintained at about 1200° C. for 10 hours, and then slowly cooled again. At this time, the heating rate is 0.
5℃/min ~ 5℃/min, slow cooling rate 0.5℃/min ~ 5℃/min
Tests and evaluations were carried out using various combinations up to 10 minutes, but although the cracks were reduced by 2 to 3% compared to those without heat treatment, no significant improvement could be achieved. As a result of further detailed investigation into the crack generation process, we found that if the temperature of the single crystal was pulled and slowly cooled to less than 40°C and then left or processed, many cracks would occur, but if the single crystal was kept at a temperature above 40°C, cracks would occur. It was found that the temperature decreases significantly, especially at 50°C.

さらに単結晶のクラツク発生率は分極化前と後では大幅
に異なつており、分極化終了したものは室温放置しても
ほとんどクラツクしないことがわかつた。引上げして徐
冷後単結晶を7日間放置したときのリチウムニオベート
単結晶維持温度とクラツク発生率との関係を第1図実線
に示す。同様に評価したリチウムタンタレートの例を第
1図破線に示す。本発明は以上の試験、調査により得ら
れた結果に基きなされたもので、リチウムニオベート単
結晶又はリチウムタンタレート単結晶を引上げ法により
引上げた後、徐冷する工程、必要に応じて所定の加工工
程を経て単結晶をほ寸その単結晶のキユリ一温度又はそ
れ以上の温度に加熱し、所定の電圧を印加することによ
り分極処理を行う工程とを少なくとも備えた単結晶の製
造方法において、前記引上げ終了から前記所定の加工工
程を経て分極処理を終了するまでの単結晶の温度を40
℃以上に維持することを特徴とする単結晶の製造方法で
ある。
Furthermore, it was found that the rate of cracking in single crystals was significantly different before and after polarization, and that once polarized crystals hardly cracked even when left at room temperature. The solid line in Figure 1 shows the relationship between the lithium niobate single crystal maintenance temperature and the crack occurrence rate when the single crystal was pulled and allowed to stand for 7 days after being slowly cooled. An example of lithium tantalate evaluated in the same manner is shown by the broken line in FIG. The present invention was made based on the results obtained from the above tests and investigations, and includes a step of pulling a lithium niobate single crystal or a lithium tantalate single crystal by a pulling method, and then slowly cooling it, if necessary. A method for producing a single crystal comprising at least a step of heating the single crystal through a processing step to a temperature equal to or higher than the temperature of the single crystal, and performing a polarization treatment by applying a predetermined voltage, The temperature of the single crystal from the end of the pulling to the end of the polarization treatment through the predetermined processing step was set at 40°C.
This is a method for producing a single crystal characterized by maintaining the temperature at or above ℃.

又,引上げ終了から前記所定の加工工程を経て分極処理
を終了するまでの単結晶の温度を50℃以上に維持する
ことを特徴とする。(6)発明の実施例実施例 1 白金るつぼ内のリチウムニオベート材料を1300℃に
溶解して128ベY軸の種結晶を浸し、所定の速度で1
282Y軸方向に引上げLiNbO3単結晶を生長させ
る。
Further, the single crystal is characterized in that the temperature of the single crystal is maintained at 50° C. or higher from the end of pulling to the end of the polarization treatment through the predetermined processing steps. (6) Embodiments of the invention Example 1 Lithium niobate material in a platinum crucible is melted at 1300°C, a 128-beam Y-axis seed crystal is immersed, and the lithium niobate material is melted at a predetermined speed.
282 A LiNbO3 single crystal is grown by pulling in the Y-axis direction.

引上げた単結晶を1℃/分の割合で徐冷し、約60℃に
なつたときX線により単結晶のz軸方向を素早く確認す
る。次に電極をつけやすいようにするため単結晶表面を
切削加工するが、このとき切削油や工具の温度はほ〜6
0℃である。次に単結晶のz軸方向の両側に白金電極板
を設ける。電極板はあらかじめ60℃に予熱したものを
用い、手際よくつける。工程の待ち時間が長いときは小
型電気炉で6『Cに保温しておく。その後60℃に予熱
された電気炉に入れる。前記X線測定から電気炉に投入
前までの単結晶温度はほマ60℃、最底50゜Cに維持
された。
The pulled single crystal is slowly cooled at a rate of 1° C./min, and when the temperature reaches about 60° C., the z-axis direction of the single crystal is quickly confirmed using X-rays. Next, the surface of the single crystal is cut to make it easier to attach the electrodes, but at this time the temperature of the cutting oil and tools is around 6.
It is 0°C. Next, platinum electrode plates are provided on both sides of the single crystal in the z-axis direction. Use an electrode plate that has been preheated to 60°C and apply it quickly. If the waiting time for the process is long, keep the temperature at 6°C in a small electric furnace. Thereafter, it is placed in an electric furnace preheated to 60°C. The temperature of the single crystal from the X-ray measurement until before being placed in the electric furnace was maintained at approximately 60°C and at the lowest temperature of 50°C.

再び電気炉で加熱開始し6温度が1200℃近辺になる
まで昇温し電極板に接続したリード線に通電して約2V
/CTrLの電圧をかけたまX温度を1℃/分で下降さ
せて分極化せしめ、さらに100℃で電源電圧を切断し
たま匁にして室温まで冷却し分極化したLlNbO3単
結晶を得る。上記の方法で50個の単結晶を製作したと
ころクラツク発生率は2%であり、従来の90%に比べ
て大幅に改善されていることが確認された。
Start heating again in the electric furnace, raise the temperature until it reaches around 1200℃, and then apply electricity to the lead wire connected to the electrode plate to increase the voltage to about 2V.
While the voltage of /CTrL is applied, the X temperature is lowered at a rate of 1° C./min to polarize, and the power source voltage is cut off at 100° C., and the crystal is cooled to room temperature to obtain a polarized LlNbO3 single crystal. When 50 single crystals were manufactured using the above method, the crack occurrence rate was 2%, which was confirmed to be significantly improved compared to the conventional rate of 90%.

尚分極処理の電気炉に入れる前の単結晶を60℃に保温
したまX7日間放置したもの又放置後切削加工したもの
もクラツク発生率は同様に少なかつた。実施例 2 白金ロジユームるつぼ内のリチウムタンタレート材料を
1700℃に溶解してX軸の種結晶を浸し、所定の速度
で引上げ、リチウムタンタレート単結晶を生長させる。
Furthermore, the crack occurrence rate was similarly low when the single crystal was left at 60° C. for 7 days before being placed in the electric furnace for polarization treatment, and when it was cut after being left standing. Example 2 A lithium tantalate material in a platinum rhodium crucible is melted at 1700° C., the X-axis seed crystal is immersed therein, and the material is pulled up at a predetermined speed to grow a lithium tantalate single crystal.

引上げた単結晶を1℃/分の割合で徐冷し、約55℃に
なつたときX線により単結晶のz軸方向を素早く確認す
る。次に電極をつけやすいようにするため単結晶表面を
切削加工するが、このとき切削油や工具の温度はほ〜5
5℃である。次に単結晶のZ軸方向の両側に銀パラジウ
ムペーストを電極として塗る。電極ペーストはあらかじ
め55゜Cに予熱したものを用い、手際よくつける。そ
の後55℃に予熱された電気炉に入れる。前記X線測定
から電気炉に投入前までの単結晶温度はほマ55℃、最
低45℃に維持された。
The pulled single crystal is slowly cooled at a rate of 1° C./min, and when the temperature reaches about 55° C., the z-axis direction of the single crystal is quickly confirmed using X-rays. Next, the surface of the single crystal is cut to make it easier to attach the electrodes, but at this time the temperature of the cutting oil and tools is around 5-5.
The temperature is 5°C. Next, silver-palladium paste is applied as electrodes to both sides of the single crystal in the Z-axis direction. Use electrode paste that has been preheated to 55°C and apply it quickly. Thereafter, it is placed in an electric furnace preheated to 55°C. The temperature of the single crystal from the X-ray measurement to before being placed in the electric furnace was maintained at approximately 55°C and at least 45°C.

再び電気炉で加熱開始し、温度が640℃近辺になるま
で昇温し電極ペーストに接続したリード線に通電して約
10V/(V7lの電圧をかけたまX温度を1℃/分で
下降させて分極化せしめ、さらに500℃で電源電圧を
切断したまkにして室温まで冷却し分極化したLiTa
O3単結晶を得る。上記の方法で50個の単結晶を製作
したところクラツク発生率は1%であり、従来の60%
に比べて大幅に改善されていることが確認された。(7
)発明の効果以上の通り本発明によれば、引上げ法によ
り引上げたリチウムニオベートやリチウムタンタレート
等の強誘電体単結晶のクラツク発生率を大幅に減少する
ことが出来、その結果単結晶製品の歩留が飛躍的に向上
し、品質や信頼性が著しく向上するという格別の効果を
奏する。
Start heating again in the electric furnace, raise the temperature until it reaches around 640℃, apply electricity to the lead wire connected to the electrode paste, apply a voltage of about 10V/(V7l), and lower the X temperature at a rate of 1℃/min. LiTa was polarized at 500°C, then cooled to room temperature without turning off the power supply voltage, and polarized.
Obtain an O3 single crystal. When 50 single crystals were manufactured using the above method, the crack occurrence rate was 1%, which was 60% compared to the conventional method.
It was confirmed that it was significantly improved compared to . (7
) Effects of the Invention As described above, according to the present invention, the crack occurrence rate of ferroelectric single crystals such as lithium niobate and lithium tantalate pulled by the pulling method can be significantly reduced, and as a result, single crystal products can be improved. This has the remarkable effect of dramatically improving yields and significantly improving quality and reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は引上げたリチウムニオベート及びリチウムタン
タレート単結晶の放置温度とクラツク発生率との関係を
示す図である。
FIG. 1 is a diagram showing the relationship between the temperature at which pulled lithium niobate and lithium tantalate single crystals are left and the crack occurrence rate.

Claims (1)

【特許請求の範囲】 1 リチウムニオベート(LiNbO_3)単結晶を引
上げ法により引上げた後、徐冷する工程、必要に応じて
所定の加工工程を経て単結晶をほゞそのキュリー温度又
はそれ以上の温度に加熱し、所定の電圧を印加すること
により分極処理を行う工程とを少なくとも備えた単結晶
製造方法において、前記引上げ終了から前記所定の加工
工程を経て分極処理を終了するまでの単結晶の温度を4
0℃以上に維持することを特徴とする単結晶の製造方法
。 2 引上げ終了から前記所定の加工工程を経て分極処理
を終了するまでの単結晶の温度を50℃以上に維持する
ことを特徴とする特許請求の範囲第1項記載の単結晶の
製造方法。 3 リチウムタンタレート(LiTaO_3)単結晶を
引上げ法により引上げた後、徐冷する工程、必要に応じ
て所定の加工工程を経て単結晶をほゞそのキュリー温度
又はそれ以上の温度に加熱し、所定の電圧を印加するこ
とにより分極処理を行う工程とを少なくとも備えた単結
晶製造方法において、前記引上げ終了から前記所定の加
工工程を経て分極処理を終了するまでの単結晶の温度を
40℃以上に維持することを特徴とする単結晶の製造方
法。 4 引上げ終了から前記所定の加工工程を経て分極処理
を終了するまでの単結晶の温度を50℃以上に維持する
ことを特徴とする特許請求の範囲第3項記載の単結晶の
製造方法。
[Claims] 1. After pulling a lithium niobate (LiNbO_3) single crystal by a pulling method, the single crystal is heated to approximately its Curie temperature or higher through a step of slow cooling and, if necessary, a predetermined processing step. In a single crystal production method comprising at least a step of performing polarization treatment by heating to a temperature and applying a predetermined voltage, the single crystal is temperature 4
A method for producing a single crystal, characterized by maintaining the temperature at 0°C or higher. 2. The method for producing a single crystal according to claim 1, characterized in that the temperature of the single crystal is maintained at 50° C. or higher from the end of pulling until the end of polarization treatment through the predetermined processing steps. 3 After pulling a lithium tantalate (LiTaO_3) single crystal by a pulling method, the single crystal is heated to approximately its Curie temperature or higher through a slow cooling process and, if necessary, a predetermined processing process, to a predetermined temperature. A single crystal manufacturing method comprising at least a step of performing polarization treatment by applying a voltage of A method for producing a single crystal characterized by maintaining. 4. The method for producing a single crystal according to claim 3, characterized in that the temperature of the single crystal is maintained at 50° C. or higher from the end of pulling to the end of the polarization treatment through the predetermined processing steps.
JP56190590A 1981-11-30 1981-11-30 Single crystal manufacturing method Expired JPS5933559B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56190590A JPS5933559B2 (en) 1981-11-30 1981-11-30 Single crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56190590A JPS5933559B2 (en) 1981-11-30 1981-11-30 Single crystal manufacturing method

Publications (2)

Publication Number Publication Date
JPS5895690A JPS5895690A (en) 1983-06-07
JPS5933559B2 true JPS5933559B2 (en) 1984-08-16

Family

ID=16260594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190590A Expired JPS5933559B2 (en) 1981-11-30 1981-11-30 Single crystal manufacturing method

Country Status (1)

Country Link
JP (1) JPS5933559B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
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JPH02111549A (en) * 1988-10-20 1990-04-24 Seiko Epson Corp Printing equipment that uses hot melt ink
JPH07120361A (en) * 1993-10-22 1995-05-12 Chichibu Onoda Cement Corp Device and method for extracting core

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US9369105B1 (en) * 2007-08-31 2016-06-14 Rf Micro Devices, Inc. Method for manufacturing a vibrating MEMS circuit
US9391588B2 (en) 2007-08-31 2016-07-12 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9385685B2 (en) 2007-08-31 2016-07-05 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9117593B2 (en) 2012-11-02 2015-08-25 Rf Micro Devices, Inc. Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs
US9991872B2 (en) 2014-04-04 2018-06-05 Qorvo Us, Inc. MEMS resonator with functional layers
US9998088B2 (en) 2014-05-02 2018-06-12 Qorvo Us, Inc. Enhanced MEMS vibrating device
JP7069886B2 (en) * 2018-03-15 2022-05-18 住友金属鉱山株式会社 Single crystal transport device and single crystal transport method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02111549A (en) * 1988-10-20 1990-04-24 Seiko Epson Corp Printing equipment that uses hot melt ink
JPH07120361A (en) * 1993-10-22 1995-05-12 Chichibu Onoda Cement Corp Device and method for extracting core

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