JPS5934224B2 - Reversible hydrogen absorption/release material - Google Patents
Reversible hydrogen absorption/release materialInfo
- Publication number
- JPS5934224B2 JPS5934224B2 JP56114732A JP11473281A JPS5934224B2 JP S5934224 B2 JPS5934224 B2 JP S5934224B2 JP 56114732 A JP56114732 A JP 56114732A JP 11473281 A JP11473281 A JP 11473281A JP S5934224 B2 JPS5934224 B2 JP S5934224B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- alloy
- temperature
- release material
- hydrogen absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/133—Renewable energy sources, e.g. sunlight
Landscapes
- Hydrogen, Water And Hydrids (AREA)
Description
【発明の詳細な説明】
本発明は、可逆性水素吸収・放出材料に関するものであ
り、特に、熱電子管、テレビジョン受像管や真空管式太
陽熱集熱器などの水素圧力制御用として使用されうる材
料に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a reversible hydrogen absorption/release material, and in particular to a material that can be used for hydrogen pressure control in thermionic tubes, television picture tubes, vacuum tube solar collectors, etc. It is related to.
従来よ択ガス吸収のため様々な物質が使用されている。Conventionally, various materials have been used for selective gas absorption.
例えば、非金属ガス吸着剤としては、活性炭やゼオライ
トなどがある。For example, examples of nonmetallic gas adsorbents include activated carbon and zeolite.
また、バリウムなどの金属型ガス吸収剤も広く使用され
Cいる。Metal type gas absorbents such as barium are also widely used.
一般に、バリウムなどの蒸発型材料は、その合金を加熱
することによって放出され、蒸発Uて際して使用されて
いる機器の内壁面に凝縮付着し、効果を示す。Generally, an evaporative material such as barium is released by heating its alloy, and during evaporation, it condenses and adheres to the inner wall surface of the equipment being used, thereby exhibiting its effect.
ところが、この種の蒸発性ガス吸収剤は必然的に内壁面
を汚すため、ある種の状況においては望ましくないこと
も多い。However, this type of evaporative gas absorbent inevitably stains the inner wall surface and is therefore often undesirable in certain situations.
そこで、最近、非蒸発型ガス吸収剤、例れば、Zr
A1合金、Zr Ti合金などが提案されている。Therefore, recently, non-evaporable gas absorbents such as Zr
A1 alloy, ZrTi alloy, etc. have been proposed.
しかし、これらの合金は、通常、酸化物や窒化物などの
不活性被膜層で覆われているため、ガス吸収を行なう前
には、予め約450℃以上の高温で熱処理したり、ある
いけ活性化処理しなければならない。However, since these alloys are usually covered with an inert coating layer such as an oxide or nitride, they must be heat treated at a high temperature of about 450°C or higher or activated before gas absorption. It must be treated as a chemical.
また、熱電子管や真空管式太陽熱などの用途においては
、前記水素吸着剤の水素吸収効果だけによる超高真空は
、必ずしも有効ではなく、ある温度、例えば250℃で
、一定の水素圧力、例えば約10−3mmHgを有する
方が真空機器は長寿命であることが判明してきた。Furthermore, in applications such as thermionic tubes and vacuum tube solar thermal systems, ultra-high vacuum created solely by the hydrogen absorption effect of the hydrogen adsorbent is not necessarily effective; It has been found that vacuum equipment has a longer lifespan when the temperature is −3 mmHg.
本発明の目的は、前記これらの問題点に鑑み、特に40
0℃以下の比較的低温度領域において、何らの活性化処
理なしに、数百mmHg以下程度の比較的低い水素圧力
のもとで、大量の水素ガスを迅速に、かつ容易に吸収し
て高真空となし、しかも、周囲温度を高めるか、周囲の
水素圧力を下げることによって、逆に任意の所望の量だ
けの水素を可逆的に放出することができるような水素吸
収・放出材料を提供することである。In view of these problems, it is an object of the present invention to
In a relatively low temperature region below 0℃, without any activation treatment, and under a relatively low hydrogen pressure of several hundred mmHg or less, a large amount of hydrogen gas can be quickly and easily absorbed to generate a high To provide a hydrogen absorbing/releasing material capable of reversibly releasing any desired amount of hydrogen without creating a vacuum and by increasing the ambient temperature or lowering the ambient hydrogen pressure. That's true.
換言すれば、真空系機器の内部の水素圧力を周囲温度と
残存水素含有量によって任意に制御し保持しうる可逆性
水素吸収・放出材料を提供することである。In other words, the object of the present invention is to provide a reversible hydrogen absorbing/releasing material that can arbitrarily control and maintain the hydrogen pressure inside a vacuum system device depending on the ambient temperature and residual hydrogen content.
本発明の水素吸収・放出材料は、一般式ZrVxで示さ
れ、VのZrに対する原子比Xが、x=0.01〜0,
28である二元系合金である。The hydrogen absorbing/releasing material of the present invention is represented by the general formula ZrVx, and the atomic ratio X of V to Zr is x=0.01 to 0,
28, which is a binary alloy.
この合金は、幾分粘性を有し、水素吸収、および水素放
出を繰シ返した後でも、空気中で発火することはない。This alloy is somewhat viscous and will not ignite in air even after repeated hydrogen absorption and hydrogen release.
また、使用の際には従来のZr系合金ゲッター材の如く
、粉末処理は不要であシ、塊状のままでも、充分期待す
る性能を発揮する。Moreover, unlike conventional Zr-based alloy getter materials, powder treatment is not required during use, and even in the form of lumps, it fully exhibits the expected performance.
Zr−V系合金は、1860℃以上の温度に加熱すれば
、均質に固溶し、例えば、アルゴンアーク溶解法や、プ
ラズマアーク溶解法などによって、所望の組成の合金を
容易に製造することができる。Zr-V alloys form a homogeneous solid solution when heated to a temperature of 1860°C or higher, and alloys with desired compositions can be easily manufactured by, for example, argon arc melting or plasma arc melting. can.
本発明の組成範囲のうノち、■が約16.5原子係(Z
rV□、 2o)以下では、はとんどβ−Zr相で占め
られている。In the composition range of the present invention, ■ is about 16.5 atoms (Z
rV□, 2o) and below, is mostly occupied by the β-Zr phase.
一方、Z r V□ 、20−Z r V□ 、28の
範囲では、1230℃以下で共晶組織が形成されるもの
の、全合金相の90モル係以上は、前記β−Z r相で
ある。On the other hand, in the range of ZrV□, 20-ZrV□, 28, although a eutectic structure is formed at 1230°C or lower, 90 molar proportion or more of the entire alloy phase is the β-Zr phase. .
即ち、前記効果を有する本発明の目的に合致したZr−
V合金は、90モル係以上がβ−Zr相を有することが
必要であり、この組成範囲がZrV□、。That is, Zr-
The V alloy must have a β-Zr phase with a molar ratio of 90 or more, and this composition range is ZrV□.
1〜Zrvo、28に対応する。1E21.9原子%
(ZrVo、23 )以上にV75E含有されれば、金
属間化合物Z r V 2相の存在量が増大して、その
結果、よシ一層低水素圧と低温度域で水素を吸収するも
のの、比較的高い圧力域(常温でけ、数百mmHg以上
)で水素を放出してしまうため、熱電子管や真空管式太
陽熱集熱器などの低圧力を有する機器の管内での圧力制
御が困難である。1 to Zrvo, corresponding to 28. 1E21.9 atomic%
(ZrVo, 23) If V75E is contained above (ZrVo, 23), the amount of the intermetallic compound Z r V 2 phase will increase, and as a result, hydrogen will be absorbed even more at lower hydrogen pressures and lower temperatures. Since hydrogen is released in a high pressure range (several hundred mmHg or more at room temperature), it is difficult to control the pressure inside the tubes of low-pressure devices such as thermionic tubes and vacuum tube solar collectors.
逆に、ZrV□、。On the contrary, ZrV□.
1よりv含有量が少なければ、400℃以下の低温領域
では、はとんど水素を吸収せず、よシ高温での熱処理や
活性化などの前処理を必要とする。If the v content is less than 1, hydrogen will hardly be absorbed in the low temperature region below 400° C., and pretreatment such as heat treatment or activation at a high temperature is required.
なお、本発明の合金は、水素ガス以外の酸素、二酸化炭
素、一酸化炭素、メタン、窒素、水蒸気などの不純物ガ
スを極めて容易1(吸収し、しかも加熱や周囲圧力の減
少によってもこれら不純物ガスを遊離させないという不
純物除去効果を有しており、ゲッター材として利用する
こともできる。The alloy of the present invention can absorb impurity gases other than hydrogen gas, such as oxygen, carbon dioxide, carbon monoxide, methane, nitrogen, and water vapor, with great ease (1), and even by heating or reducing the ambient pressure, these impurity gases can be removed. It has an impurity removal effect that prevents the release of impurities, and can also be used as a getter material.
次表は、本発明の合金の最大(飽和)水素吸収量を示す
。The following table shows the maximum (saturated) hydrogen uptake of the alloys of the invention.
表の如く、本発明の合金は比較的低温度で、1g当たシ
約200m1の水素を極めて容易に吸蔵した。As shown in the table, the alloy of the present invention very easily absorbed about 200 ml of hydrogen per gram at relatively low temperatures.
また図は、本発明の一実施例であるZ r V o、1
5水素化物の水素圧カ一温度特性を示す。The figure also shows Z r V o,1 which is an embodiment of the present invention.
The hydrogen pressure and temperature characteristics of pentahydride are shown.
図におて、縦座標は水素を吸収した金属水素化物の平衡
水素圧力、即ち、水素吸収・放出材を収納した管内の水
素圧力であり、横座標は、その時の水素吸収・放出材の
温度である。In the figure, the ordinate is the equilibrium hydrogen pressure of the metal hydride that has absorbed hydrogen, that is, the hydrogen pressure in the pipe containing the hydrogen absorption/release material, and the abscissa is the temperature of the hydrogen absorption/release material at that time. It is.
図中、実線は水素吸収時、破線は水素放出時の特性を示
す。In the figure, the solid line shows the characteristics when hydrogen is absorbed, and the broken line shows the characteristics when hydrogen is released.
また測定は合金量1gを所定の容器に入れ、密閉管内に
収納した後、金体を温度400℃のもとで真空度lO−
6mmHgまで、約1時間排気脱ガスしその後、水素ガ
スを管内に導入して、200 mtnHgの水素圧下で
水素化後、各種温度まで冷却して行なったものである。In addition, the measurement was carried out by putting 1 g of the alloy into a predetermined container and storing it in a sealed tube.
The tube was degassed to 6 mmHg for about 1 hour, and then hydrogen gas was introduced into the tube to perform hydrogenation under a hydrogen pressure of 200 mtnHg, followed by cooling to various temperatures.
また図中、1ばZrV。In addition, in the figure, 1 indicates ZrV.
、15水素化物の含有水素量が飽和水素吸収量の20係
であるもの、2は同じく10係であるもの、311同じ
く5係であるものである。, 15 has a hydrogen content in the 20th factor of the saturated hydrogen absorption amount, 2 has the same 10th factor, and 311 has the same 5th factor.
各実施例ともに、200 iiHgの水素圧下で、何ら
前処理なしに、迅速に水素を吸収して、水素化物を形成
し、図の如く、管内の水素圧を著しく減少させた。In each of the examples, hydrogen was rapidly absorbed under a hydrogen pressure of 200 iiHg without any pretreatment to form a hydride, and the hydrogen pressure inside the tube was significantly reduced as shown in the figure.
そして、水素化物を形成した合金は、温度を下げること
によって、゛管内の水素圧力を急激に減少させ、逆に、
温度を上げることによって、管内水素圧を上昇させるこ
とができ、温度を制御することによって所望の水素圧力
を得ることができた。Then, by lowering the temperature of the alloy that has formed the hydride, the hydrogen pressure inside the tube is rapidly reduced, and conversely,
By increasing the temperature, the hydrogen pressure inside the tube could be increased, and by controlling the temperature, the desired hydrogen pressure could be obtained.
更に、図に示したように、水素含有量を調節すルコとに
よっても、平衡水素圧力を制御でき、その結果、温度が
一定であっても、任意の水素圧力を得ることができた。Furthermore, as shown in the figure, the equilibrium hydrogen pressure could be controlled by adjusting the hydrogen content, and as a result, any desired hydrogen pressure could be obtained even if the temperature was constant.
以上のように、本発明の合金は、広範囲の水素圧力域と
温度領域において、非常に優れた可逆性を有する水素吸
収・放出材料である。As described above, the alloy of the present invention is a hydrogen absorbing/releasing material that has excellent reversibility in a wide range of hydrogen pressure and temperature ranges.
図面は、本発明の一実施例であるZrVo、t5水素化
物の含有水素量を種々変えた場合の汚度−平衡水素圧力
を示す特性図である。The drawing is a characteristic diagram showing the pollution level-equilibrium hydrogen pressure when the amount of hydrogen contained in ZrVo, t5 hydride, which is an example of the present invention, is varied.
Claims (1)
合金よりなる可逆性水素吸収・放出材料。[Claims] 1 Represented by the general formula ZrVx. The atomic ratio X of V to Zr is 0. A reversible hydrogen absorption/release material made of an alloy that is O2N2.28.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114732A JPS5934224B2 (en) | 1981-07-22 | 1981-07-22 | Reversible hydrogen absorption/release material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114732A JPS5934224B2 (en) | 1981-07-22 | 1981-07-22 | Reversible hydrogen absorption/release material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5816046A JPS5816046A (en) | 1983-01-29 |
| JPS5934224B2 true JPS5934224B2 (en) | 1984-08-21 |
Family
ID=14645237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56114732A Expired JPS5934224B2 (en) | 1981-07-22 | 1981-07-22 | Reversible hydrogen absorption/release material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5934224B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4839085A (en) * | 1987-11-30 | 1989-06-13 | Ergenics, Inc. | Method of manufacturing tough and porous getters by means of hydrogen pulverization and getters produced thereby |
| JP2980425B2 (en) * | 1990-09-14 | 1999-11-22 | 日本パイオニクス株式会社 | Noble gas purification method |
-
1981
- 1981-07-22 JP JP56114732A patent/JPS5934224B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5816046A (en) | 1983-01-29 |
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