JPS5934295B2 - Photosensitive material for pattern formation having a photosensitive chalcogenide layer and method for producing the same; optical mask for pattern formation using the photosensitive chalcogenide layer and pattern forming method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photosensitive material for pattern formation having a photosensitive chalcogenide layer.

Conventionally, photosensitive materials for pattern formation having a photosensitive chalcogenide layer have been proposed.

One of the photosensitive materials for pattern formation having a photosensitive chalcogenide layer has a structure in which an amorphous chalcogenide layer and a metal layer are laminated on a substrate to form a photosensitive chalcogenide layer, and its photosensitivity When the chalcogenide layer is exposed to light in a desired pattern, a metal-doped region is formed in the exposed region of the amorphous chalcogenide layer, and the metal-doped region is formed in the exposed region of the amorphous chalcogenide layer. Although the area is not affected by the alkaline solution, the area where the metal is not doped is affected by the alkaline solution, so that after the above-mentioned exposure process, an etching process using an etchant that dissolves the metal of the metal layer and an etchant using an alkaline solution are performed. If the etching process is performed sequentially, a pattern is formed in which only the exposed area of the amorphous chalcogenide layer is left on the substrate soil, which can be used to form the desired pattern. It will be done.

Another type of photosensitive material for pattern formation having a photosensitive chalcogenide layer is one in which the photosensitive chalcogenide layer described above is formed on a substrate having a layered or plate-like body on which a pattern is to be formed. The photosensitive chalcogenide layer is sequentially subjected to the above-described exposure treatment and etching treatment, and only the exposed area of the amorphous chalcogenide layer is transformed into a layered or plate-like structure in which a pattern is to be formed. If the remaining pattern is formed as a mask and then etched using an etchant that dissolves the layered or plate-like material, the areas of the layered or plate-like material that are not masked by the mask can be removed. By forming a pattern in the form of etching, the pattern can be used to form a desired pattern. The pattern-forming photosensitive material having such a photosensitive chalcogenide layer and the pattern-forming method using the same are the same as the conventional pattern-forming photosensitive material having a photopolymerizable or photodegradable organic compound layer and the pattern-forming method using the same. This method has superior features compared to conventional pattern forming methods. That is, for the sake of simplicity, an embodiment in which the layered or plate-like material is etched using the photosensitive material for pattern formation having a photosensitive chalcogenide layer on the substrate having the layered or plate-like material on the substrate body described above. Using a pattern forming method for forming a pattern as a desired pattern and a photosensitive material for pattern formation having a photopolymerizable or photodegradable organic compound on a substrate having a layered or plate-like body on the substrate body, To compare this with a pattern forming method in which a pattern formed by etching a layered or plate-like material is formed as a desired pattern,
In the case of a pattern forming method using a pattern forming photosensitive material having a photopolymerizable or photodegradable organic compound layer,
A layer of a photopolymerizable or photodegradable organic compound is formed using the photosensitive material for pattern formation on a layered or plate-like substrate by applying the material using a spinner, and then a desired pattern is formed on this organic compound layer. The exposed areas of the organic compound layer (if the organic compound layer has photopolymerizability) or the other areas (if the organic compound layer is photodegradable) are sequentially exposed to light and developed using an appropriate developer. Form a pattern in which only the layered or plate-like material (if the material has the properties of
Next, an etching process is performed using an etchant that dissolves the layered or plate-like material, and the desired pattern is obtained by etching the area of the layered or plate-like material that is not masked by the above-mentioned mask. Therefore, in the case of a pattern forming method using a photosensitive material for pattern formation having an organic compound layer, the photosensitive material for pattern formation is applied to the layered or plate-like material of the substrate, and a thinning compound layer is applied. pattern formation using a photosensitive material for pattern formation having a photosensitive chalcogenide layer, although it requires coating the material with a spinner etc., and it is relatively difficult to uniformly apply the material. In the case of the method, the photosensitive material for pattern formation is obtained by sputtering or vacuum deposition of the photosensitive chalcogenide layer on the layered or plate-like substrate of the substrate. It is easier to form a uniform film using a pattern forming method using a photosensitive material for pattern forming that has an organic compound layer than a pattern forming method that uses a photosensitive material for pattern forming that has an organic compound layer. In the case of a pattern forming method using a photosensitive material, the organic compound layer swells during the development process and deforms due to heat treatment, resulting in deterioration of pattern accuracy. In the case of a pattern forming method, there is no such swelling deformation, and no heat treatment is required. The resolution limit is determined by the molecular size of the layer material, whereas amorphous chalcogenide materials do not have such a significant molecular structure, so the resolution limit is extremely high, and furthermore, they have a photodegradable organic compound layer. In the case of a pattern forming method using a photosensitive material for pattern formation, the adhesion of the photodegradable organic compound layer to the layered or plate-like substrate of the substrate is poor, and the photosensitive material for pattern formation having an organic compound layer is Depending on the pattern formation method used,
Since the mask based on the organic compound layer is attacked by the hot concentrated phosphoric acid solution, it cannot be used even if such a pattern forming method is not applied to the manufacturing method of semiconductor devices, which are often obtained in the form of layered or plate-like materials made of silicon nitride. However, when using a pattern forming method using a photosensitive material for pattern formation that has a photosensitive chalcogenide layer, the mask based on the photosensitive chalcogenide layer can withstand even hot concentrated phosphoric acid solution, so it is possible to use a layered or plated mask. It has excellent features such as the ability to immediately apply such a pattern forming method to the manufacturing method of semiconductor devices, which are often obtained by using silicon nitride as the material.

However, in the conventional photosensitive material for pattern formation having a photosensitive chalcogenide layer, the amorphous chalcogenide layer constituting the photosensitive chalcogenide layer is formed by vacuum deposition and contains at least arsenic as a main component. A metal layer having a thickness of at least 100 Å or more was formed on the amorphous chalcogenide layer exclusively by vacuum deposition.

For this reason, conventional photosensitive materials for pattern formation having a photosensitive chalcogenide layer had the following drawbacks. That is, when a pattern is formed by the method described above using a chalcogenide layer containing at least arsenic as a main component, the boundary between the region eluted by the etching process and the region not eluted is sufficiently clear. Therefore, it was difficult to obtain a desired pattern with high precision. Furthermore, since the amorphous chalcogenide layer is formed by vacuum deposition, the temperature of the substrate or layered or plate-like body on which it is formed is controlled, or additives are added to the material that will become the amorphous chalcogenide layer. If it is not formed, it has the limitation that it cannot be formed with desired properties on a substrate or a layered or plate-like body with good reproducibility and good adhesion. Furthermore, because the metal layer on the amorphous chalcogenide layer must also be formed by vapor deposition, there is a drawback that the photosensitive chalcogenide layer is exposed to light emitted from the evaporation source during vapor deposition. In addition, the metal layer has at least 100
Since the layer is thick, λ or more, light absorption by this layer is large, and therefore the photosensitive chalcogenide layer has to be exposed to light for a long time and with a large amount of light. Furthermore, due to the exposure treatment of the photosensitive chalcogenide layer, the exposed area is doped with an unnecessary large amount of metal from the metal layer, which is then diffused.
For this reason, the clarity of the boundary between the exposed area and the unexposed area of the photosensitive chalcogenide layer cannot be obtained sufficiently satisfactorily, and therefore certain limitations are imposed on obtaining the desired pattern with high precision. had. Furthermore, the amorphous chalcogenide layer contains toxic arsenic as one of the main components, which poses a danger. Therefore, the present invention aims to propose a photosensitive material for pattern formation having a novel photosensitive chalcogenide layer that does not have the above-mentioned conventional drawbacks.

In particular, the photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention has a thickness such that the photosensitive chalcogenide layer is formed by sputtering in a low-pressure inert gas. 4000λ or less, having a composition of 75 to 95 mol% selenium and 5 to 25 mol% germanium, and when the metal layer is a silver layer with a film thickness of 100A or less, a photosensitive material for pattern formation having a photosensitive chalcogenide layer. This was proposed based on the discovery that a remarkable effect can be obtained as a material, and is particularly described in the claims of the present specification.

When the photosensitive chalcogenide layer according to the present invention has a composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium, the above-mentioned remarkable effects can be obtained. The chalcogenide layer can have any of the compositions consisting of sulfur and germanium, which are elements in the same group as selenium, compositions consisting of selenium and germanium, compositions consisting of sulfur, selenium, and germanium,
When considering the amount of sulfur and/or selenium relative to germanium, if the amount of sulfur and/or selenium relative to germanium is as large as 75 to 95 mol% as in the amount of selenium of the present invention, which will become clear later, selenium is larger than sulfur. This is because it is easy to handle, and from this point of view, the following matters have become clear when the amorphous chalcogenide layer has a composition consisting of selenium and germanium.
One of the things that became clear when the amorphous chalcogenide layer has a composition consisting of selenium and germanium is that the photosensitive chalcogenide formed by laminating the amorphous chalcogenide layer and the silver layer. When a layer is obtained, the photosensitivity of selenium in the amorphous chalcogenide layer is 7.
When the amount is 5 mol% or more, it is more remarkable than when it is less than that, and this means that the "photosensitive chalcogenide layer" can fully exhibit the properties as a "photosensitive phase." In this method, an amorphous chalcogenide layer made of selenium and germanium and a silver layer are laminated on a substrate to form a photosensitive chalcogenide layer, and then this photosensitive chalcogenide layer is exposed to light in a desired pattern. The silver in the amorphous chalcogenide layer is removed by sequentially performing a first etching process using a first etchant that dissolves silver, and a second etching process using a second etchant using an alkaline solution. When only the doped region (the region exposed with the desired pattern) is left on the substrate, the thickness of the remaining amorphous chalcogenide layer (this is referred to as D1) and the above-mentioned exposure treatment and the thickness of the amorphous chalcogenide layer before the first and second etching treatments (this is referred to as DO).
As a result of measuring the residual film rate (expressed as x100%) with respect to the exposure time in the above-mentioned exposure process using the amounts of selenium and germanium (mol%) as parameters, a curve as shown in Figure 1 was obtained. It is quite obvious. In this case, the exposure process uses a 200W mercury lamp as the light source, and the amount of light on the exposed surface is 60mW/? It was hot. Another thing that became clear when the amorphous chalcogenide layer was composed of selenium and germanium was as follows.
In the case where a photosensitive chalcogenide layer is formed on a substrate as described above, and then an exposure treatment and a first and second etching treatment are performed to obtain an amorphous chalcogenide layer left on the substrate, If the pattern has selenium in the amorphous chalcogenide layer of 75 mol% or more, compared to less than 75 mol%,
Obtained with high precision and therefore "photosensitive chalcogenide layer"
This means that it can fully demonstrate its characteristics as "for pattern formation."

This can be seen from the curve showing the remaining film rate (D,/DO x 100%) with the amount of selenium and germanium (mol%) as a parameter with respect to the exposure time mentioned above shown in Figure 1. It is clear that the slope of the curve in the above case is larger than that in the case where selenium is 70 mol %, that is, the contrast as a photosensitive material is large. Furthermore, another matter that has become clear when the amorphous chalcogenide layer has a composition consisting of selenium and germanium is that a substrate or a photosensitive chalcogenide layer is formed as described above, and then a photosensitive chalcogenide layer is formed on it. The substrate is exposed to light in a desired pattern, first etched using a first etchant that dissolves silver, and second etched using a second etchant using an alkaline solution. Silver-doped areas of amorphous chalcogenide (areas exposed with desired pattern)
In the case where only selenium is left, the remaining amorphous chalcogenide layer has a selenium content of 95%.
If it is less than 95 mol%, it will reduce the distortion that occurs during the first etching process using the first etchant, such as aqua regia or concentrated nitric acid, which dissolves silver. The photosensitive chalcogenide layer is obtained without causing any pinholes or pattern collapse, i.e., the photosensitive chalcogenide layer is obtained after the exposure treatment and before the first etching treatment. This means that the "photosensitive chalcogenide layer" can fully exhibit its characteristics as a material for pattern formation. This fact has been confirmed through experiments. Furthermore, when the photosensitive chalcogenide layer according to the present invention is formed by sputtering the amorphous chalcogenide layer in a low-pressure inert gas, the remarkable effect mentioned above can be obtained. This is because the crystalline chalcogenide layer has good adhesion to the substrate.

That is, in conventional pattern-forming photosensitive materials having a photosensitive chalcogenide layer, the photosensitive chalcogenide layer is usually formed by vacuum deposition over the amorphous chalcogenide layer. However, the amorphous chalcogenide layer formed by vacuum evaporation does not have good adhesion to the substrate, and therefore, when forming a pattern as described above using an alkaline solution or various acid solutions, the amorphous chalcogenide layer does not adhere well to the substrate. It was easy to peel off from the substrate, and therefore it was difficult to substantially form a pattern as described above. On the other hand, in the present invention, the photosensitive chalcogenide layer is formed from the amorphous chalcogenide layer by sputtering in a low pressure inert gas, for example, by high frequency sputtering in Ar at 5 x 10-310 rr. It has extremely good adhesion to the substrate, and when a pattern is formed using an alkaline solution or various acid solutions as described above, the amorphous chalcogenide layer does not peel off from the substrate. A pattern can be formed reliably.
Further, when the metal layer of the photosensitive chalcogenide layer according to the present invention is a silver layer having a thickness of 100 Å or less, the above-mentioned remarkable effects can be obtained for the following reason. That is, in order for the photosensitive material for pattern formation according to the present invention to have photosensitivity as a photosensitive material, silver must be doped into the amorphous chalcogenide layer by exposure treatment, and for this purpose, light must be doped with silver. It is necessary to reach the interface between the silver layer and the amorphous chalcogenide layer, but if the silver layer is thick, the absorption of light in this silver layer is large and sufficient light is prevented from reaching the interface. Therefore, the sensitivity as a photosensitive material is extremely low. When the silver layer is sufficiently thin as 100λ or less as in the present invention, the sensitivity as a photosensitive material exhibits a practically effective sensitivity. Furthermore, when the photosensitive chalcogenide layer according to the present invention has a film thickness of 4000λ or less, the above-mentioned remarkable effects can be obtained. Regardless of whether it is doped with silver or not, its acid resistance is extremely high, and therefore, the photosensitive material for pattern formation allows a photosensitive chalcogenide layer to be formed on a substrate having a layered or plate-like body on the substrate body according to the present invention. When forming a pattern on a layered or plate-like material using an acidic material and an acidic liquid as described above, the amorphous chalcogenide layer serves as a mask with a film thickness of 4000 Å or less. The mask can sufficiently function as a mask applied when forming a layered or plate-like body using an acidic liquid, and as mentioned above, if the silver layer is as thin as 100λ or less, the exposure treatment for the silver layer is required. In this case, all of the silver constituting the silver layer is doped into the amorphous chalcogenide layer, but in that case, if the thickness of the amorphous chalcogenide layer is 4000λ or less, it becomes alkali-insoluble and therefore becomes insoluble in alkali. This is because the mask using the amorphous chalcogenide layer can sufficiently function as a mask applied when forming a layered or plate-like body using an alkaline solution.

Embodiments of the present invention will be described in detail with reference to the drawings. FIG. 2 shows an embodiment of a photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention, in which selenium 7
A structure in which an amorphous chalcogenide layer 2 and a silver layer 3 having a composition of 5 to 95 mol% and germanium and 5 to 25 mol% of germanium are laminated in that order to form a photosensitive chalcogenide layer 4. have

The substrate 1 in this case may be made of glass, for example.

The amorphous chalcogenide layer 2 on the substrate 1 is made of a glass material containing 75 to 95 mol% selenium and 5 to 25 mol% germanium obtained by heating selenium and germanium in a vacuum and then rapidly cooling them. 1, sputtering is carried out in a low pressure inert gas without the need for particular heating or heating, and then the amorphous chalcogenide is sputtered in air for a short period of time, for example about 5 minutes, at a temperature of about 210)°C. Heat treatment at a temperature below the glass transition temperature of the layer, e.g.
Formed to a thickness of ~4000 mm.

Further, the silver layer 3 on the amorphous chalcogenide layer 2 is formed by forming the amorphous chalcogenide layer 2 on the substrate 1 as described above, and then maintaining it at a temperature in the range of about 0°C to 90°C. For example, a silver nitrate aqueous solution of about 30% by weight kept at room temperature, or a silver free solution containing silver cyanide as a main component kept at a temperature of about 50°C for about several seconds to 10 minutes. It is immersed in an electrolytic plating solution for a short time, for example, about 1 to 2 minutes, and then washed and dried to form a thickness of 1008 or less, for example, about 70 to 80λ. In this case, additives such as ammonium may be added to the solution containing silver ions to control the deposition rate of the silver layer. The photosensitive material for pattern formation according to the present invention does not have the above-mentioned drawbacks of the conventional photosensitive material for pattern formation, and its photosensitivity is due to the fact that the amorphous chalcogenide layer of the photosensitive chalcogenide layer has a high resistance. Film thickness 4000 mm formed by sputtering in inert gas
Selenium 75-95 mol%, germanium 5-2 Å or less
It has a composition of 5 mol%. Furthermore, since the metal layer is a silver layer with a film thickness of 100λ or less, it is clear from the above description that a photosensitive material for pattern formation with high contrast can be obtained.

Next, an example of a method for manufacturing a photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention will be described. % of the amorphous chalcogenide layer is applied as described above for obtaining the photosensitive material for pattern formation shown in FIG. A film with a thickness of 400 mm was formed by sputtering in a low pressure inert gas on a substrate by immersing it in a solution containing silver ions.
08 or less selenium 75-95 mol%, germanium 5-
A photosensitive chalcogenide layer is formed by laminating an amorphous chalcogenide layer having a composition of 25 mol % and a silver layer having a thickness of 100λ or less, and the desired photosensitive chalcogenide layer as shown in FIG. 2 is formed. A photosensitive material for pattern formation is obtained.

The method for producing a photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention includes the step of simply immersing the silver layer of the photosensitive chalcogenide layer of the photosensitive material for pattern formation in a solution containing silver ions. The photosensitive material for pattern formation obtained by this manufacturing method has a photosensitive chalcogenide layer containing 75 to 95 mol% selenium and 5 to 25 mol% germanium in the amorphous chalcogenide layer.
mol%, and therefore, as mentioned at the beginning, pattern formation has excellent characteristics such as high photosensitivity, high pattern accuracy, and high resistance to many acid solutions. It can be obtained as a photosensitive material for use.

Next, an example in which an optical mask for pattern formation is obtained using the photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention will be described together with its manufacturing method.
As shown in Figure A, a transparent substrate 21 is prepared,
When the photosensitive material for pattern formation shown in FIG. 2 is obtained on this substrate 21, selenium 75-9 is prepared as described above.
A layer of amorphous chalcogenide having a composition of 5 mol % and germanium and 5 to 25 mol % of germanium is applied, and then immersed in a solution containing silver ions as described above is carried out to obtain the structure shown in FIG. 3B.
As shown in the figure, selenium 75 with a thickness of 4000λ or less was formed on the substrate 21 by sputtering in a low pressure inert gas.
Photosensitive chalcogenide layer 2 formed by laminating an amorphous chalcogenide layer 22 having a composition of ~95 mol% and germanium 5-25 mol% and a silver layer 23 having a thickness of 100λ or less
4 is obtained, and then an optical mask 2 having a desired pattern is applied to the photosensitive chalcogenide layer 24 from the silver layer 23 side as shown in FIG. 3C.
5 to form a silver doped region 22'' in the exposed region of the amorphous chalcogenide layer 22 with a silver layer 23, and then a first step of dissolving the silver. A first etching process is performed using an etchant to dissolve away the silver layer 23 remaining on areas other than the area 22' as shown in FIG. 3D, and then a second etchant is applied using an alkaline solution. A second etching process is performed to remove areas other than area 22' of the substrate 2, as shown in FIG. 3E.
A pattern is formed by dissolving the substrate 1 and leaving a region 22' on the substrate 21.

In this case, the exposure process uses light obtained from a mercury lamp at a light intensity of about 60 mw/CA, for example, for 5 to 2'
The process may take approximately 0 seconds.

The first etching process may be a process in which a liquid such as aqua regia or concentrated nitric acid is used as the first etchant, and the entire body is immersed for about 7 to 10 seconds in the liquid kept at room temperature. Furthermore, the second etching treatment was performed using 100 cc of 1N sodium hydroxide and 100 cc of acetone as the second etchant.
and 100 cc of water, and immersion in the solution kept at room temperature for about 30 seconds, or as a second etchant, 100 cc of 1N sodium hydroxide and 100 cc of ethyl alcohol.
The treatment may be performed by using an alkaline solution having a ratio of C to C and immersing it in the solution kept at room temperature for about 1 minute, for example. In this case, it was confirmed that by adding an organic solvent such as acetone, ethyl alcohol, or methyl alcohol to the second etchant using an alkaline solution, the elubility of the region other than region 222 of the amorphous chalcogenide layer was improved. Therefore, such an organic solvent can be added to the second etchant. In addition, the etching process using the second etchant is performed when the temperature of the second etchant is 0°C to
It was possible to obtain a sufficiently satisfactory result at any temperature within the range of 90°C. The above is an example in which an optical master for pattern formation is obtained using a photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention.
The configuration shown in Figure E is an example of an optical mask for pattern formation obtained by the manufacturing method. The amorphous chalcogenide layer 22 has an exposure pattern during the exposure process described above, and is doped with silver by the silver layer 23 described above and left on the substrate 21. It is clear that the layer (film thickness 4000 Å or less, 2000 Å or more) has a function as an optical mask for pattern formation, which is applied when obtaining a semiconductor device, etc., since it has substantially no light transmission. .

In this optical mask for pattern formation, the portion 22' left on the substrate 21 is made of selenium 7 with a thickness of 4,000 or less, which is formed by sputtering in a low-pressure inert gas.
Obtained based on a photosensitive material for pattern formation having a photosensitive chalcogenide layer formed of an amorphous chalcogenide layer having a composition of 5 to 95 mol% germanium and a silver layer having a film thickness of 100λ or less. Therefore, as is clear from the points mentioned above at the beginning, it has been obtained as an excellent optical mask for pattern formation. Next, an example of a pattern forming method using a photosensitive material for pattern forming having a photosensitive chalcogenide layer according to the present invention will be described.It is similar to the method for manufacturing an optical mask for pattern forming described with reference to FIG. Therefore, the area 22 left on the substrate 21 in the configuration shown in FIG. 3E! It was designed to obtain a pattern for the purpose.

However, the substrate 21 in this case does not need to be translucent at all. The pattern forming method according to the present invention can be said to be a pattern forming method that can obtain a desired pattern with high sensitivity and precision without the drawbacks of the conventional pattern forming methods described above.

Next, to describe another embodiment of the pattern forming method using the photosensitive material for pattern forming having a photosensitive chalcogenide layer according to the present invention, a pattern is to be formed on the substrate body 31 as shown in FIG. 4A. A substrate 33 having a layered or plate-like body 32 is prepared, and the photosensitive chalcogenide layer 24 described above in FIG. 3B is formed on the layered or plate-like body 32 of the substrate 33 as shown in FIG. 4B. A photosensitive material for pattern formation having a photosensitive chalcogenide layer 24 formed in the same manner as shown in FIG. , an exposure process using an optical mask 25 similar to that described above in FIG. ' and then a first etchant as shown in FIG. 4D using a first etchant similar to that described above in FIG. 3D.
The silver layer 23 remaining in the area other than the area 22' is etched away by etching, and then, as shown in FIG. 4E, a second etchant similar to that described above in FIG. 3E is applied. A second etching process is performed using the master 3 to dissolve areas other than the area 22'' from the layered or plate-like body 32, leaving the area 22' on the layered or plate-like body 32.
4 and then dissolves away the layer 32 of the substrate 33.
A third etching process is carried out using an etchant of 300 to 500 nm, and as shown in FIG. Afterwards, the mask 34 is removed using a solution capable of dissolving the mask 34, as shown in FIG. 4G.

In this case, the substrate body 31 of the substrate 33 may be made of silicon,
The layer 32 is a silicon oxide layer having a thickness of, for example, about 3,000 to 4,000λ formed by a thermal oxidation method using water vapor and oxygen, or a so-called CVD method using a chemical reaction between silicon tetrahydride and ammonia. For example, it may be a silicon nitride layer or an aluminum layer with a thickness of about 1500 nm.

In addition, the third etching process is performed by using the layer 32 as a third etchant because the mask 34 can withstand liquids other than strongly oxidizing aqueous solutions such as hot concentrated sulfuric acid and a mixture of hydrogen peroxide and acid.
is a silicon oxide layer, for example, 48% hydrofluoric acid 10
CC, a solution kept at room temperature or an aqueous hydrofluoric acid solution in the ratio of 40 g of ammonium fluoride to 60 CC of water, and if the layer 32 is a silicon nitride layer or an aluminum layer, a third etchant such as a hot concentrated phosphoric acid solution. The entire body may be immersed in the liquid for about 5 to 10 minutes, for example.
Further, the master 34 can be eluted by using, for example, a concentrated sulfuric acid solution as a solution when the layer 32 is a silicon oxide layer, and by immersing the entire body in the solution maintained at, for example, 200° C. for about 2 minutes. In addition, when the layer 32 is a silicon nitride layer, it can be formed by using, for example, a 25% by weight aqueous ammonia solution and immersing the entire body in the solution maintained at, for example, 80° C. for about 8 minutes. The pattern forming method according to the present invention can be said to be a pattern forming method that can obtain a desired pattern with high accuracy and sensitivity without the drawbacks of the conventional pattern forming methods described above.

In the above description, a case has been described in which the substrate 33 has a structure in which a layered or plate-like body 32 is formed on the substrate body 31, and a desired pattern is formed by the layers. It is also possible to have a structure consisting of a layered or plate-like body, and to form a pattern of concavities and convexities on the main surface thereof.

[Brief explanation of the drawing]

FIG. 1 is a curve diagram showing the residual film rate versus exposure time of the photosensitive chalcogenide layer of a pattern-forming photosensitive material having a photosensitive chalcogenide layer applied to the present invention, which is used to explain the present invention, and FIG. A linear sectional view showing an example of a photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention, FIG. 3 shows a pattern using the photosensitive material for pattern formation having a photosensitive chalcogenide layer according to the present invention. Route sectional view showing the manufacturing method of the optical master for forming, No. 4
The figure is a cross-sectional view showing an example of a pattern forming method using a pattern forming photosensitive material having a photosensitive chalcogenide layer according to the present invention.

Claims (1)

[Claims] 1 An amorphous chalcogenide layer having a composition of 75 to 95 mol% selenium and 5 to 25 mol% germanium and having a thickness of 4000 Å or less formed on a substrate by sputtering in a low-pressure inert gas, and a layer of silver with a thickness of 100 Å or less 1. A photosensitive material for pattern formation, which has a photosensitive chalcogenide layer formed by laminating layers.