JPS5936419B2 - Semiconductor device mounting equipment - Google Patents
Semiconductor device mounting equipmentInfo
- Publication number
- JPS5936419B2 JPS5936419B2 JP54154358A JP15435879A JPS5936419B2 JP S5936419 B2 JPS5936419 B2 JP S5936419B2 JP 54154358 A JP54154358 A JP 54154358A JP 15435879 A JP15435879 A JP 15435879A JP S5936419 B2 JPS5936419 B2 JP S5936419B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solder
- semiconductor element
- nozzle
- preheating plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07188—Apparatus chuck
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
本発明は、導体の端末に電極を形成した基板に、はんだ
で形成された接合用の突起によつて半導体20素子、抵
抗素子、コンデンサ素子(以下半導体素子もしくは単に
素子という)を接合した集積回路から、半導体素子を取
外したのち、その後に新たな半導体素子を取付ける半導
体素子の取付方法および装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for forming 20 semiconductor elements, resistance elements, and capacitor elements (hereinafter referred to as semiconductor elements or simply elements) by connecting protrusions formed with solder on a substrate on which electrodes are formed at the terminals of conductors. The present invention relates to a method and apparatus for attaching a semiconductor element, in which a new semiconductor element is attached after a semiconductor element is removed from an integrated circuit to which a semiconductor element is bonded.
25半導体素子の電極上に、はんだで形成された接合用
の突起を溶融させ、基板上に形成された電極に接合し、
1枚の基板に複数個の半導体素子を搭載した集積回路は
、その製造工程あるいはエージング工程中に素子の性能
が低下し、あるいは半導30体素子の誤搭載により所定
の特性が得られないことがある。25 Melting a bonding protrusion formed with solder on the electrode of the semiconductor element and bonding it to the electrode formed on the substrate,
Integrated circuits with multiple semiconductor devices mounted on a single substrate may experience a decline in device performance during the manufacturing process or aging process, or failure to obtain desired characteristics due to incorrect mounting of semiconductor devices. There is.
このような場合には、性能が低下した素子、あるいは誤
搭載の素子を取外し、新しい所要の素子を取付けている
。この素子の交換作業においては、素子を取外したのち
、基板の電極側に35残存するはんだを十分除去し、そ
こへ新しい素子を整合定置させたのち、基板全体をはん
だの溶融温度以上に加熱された雰囲気中に置いて、はん
だを溶融させ素子の接合を行なつていた。このため、交
換を要しない素子およびその接合部が同時に加熱される
ことになり、交換を要しない素子の特性、あるいはその
接合部の信頼性を低下させるなどの欠点がある。本発明
の目的は、上記した従来技術の欠点をなくし、集積回路
の素子の交換時に、取付けるべき素子やその周囲にある
素子の特性の劣下や、接合部の信頼性を低下させること
なく新しい素子を取付けられるようにした半導体素子の
取付方法および装置を提供するにある。In such a case, the element whose performance has deteriorated or the incorrectly mounted element is removed, and a new required element is installed. To replace this element, after removing the element, remove enough solder remaining on the electrode side of the board, align and place the new element there, and heat the entire board above the melting temperature of the solder. The devices were placed in a cool atmosphere to melt the solder and join the devices. For this reason, the elements that do not require replacement and their joints are heated at the same time, resulting in drawbacks such as deterioration of the characteristics of the elements that do not require replacement or the reliability of their joints. An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art, and to replace the elements of an integrated circuit without deteriorating the characteristics of the elements to be attached or the elements surrounding them, or reducing the reliability of the joints. An object of the present invention is to provide a method and apparatus for mounting a semiconductor device, which allows the device to be mounted.
上記目的を達成するため、本発明においては、半導体素
子の接合用の突起を、基板上の電極に整合させ半導体素
子を基板上に定置し、半導体素子にその上方から気体を
吹付けると共に、半導体素子を搭載した基板をその裏面
および素子上面から加熱して、前記突起を溶融させ、半
導体素子を基板に取付けることを特徴とする。In order to achieve the above object, in the present invention, the protrusions for bonding the semiconductor element are aligned with the electrodes on the substrate, the semiconductor element is placed on the substrate, and a gas is blown onto the semiconductor element from above. The method is characterized in that the semiconductor element is mounted on the substrate by heating the substrate on which the element is mounted from the back surface and the upper surface of the element to melt the projections.
以下、本発明の実施例を図面にしたがつて説明する。Embodiments of the present invention will be described below with reference to the drawings.
第1図は本発明の第1の実施例を示すもので、同図にお
いて、11は基板にして、その表面には導体12が設け
られ、その端末に電極Al,a2,a,,a,が形成さ
れている。FIG. 1 shows a first embodiment of the present invention, in which reference numeral 11 is a substrate, a conductor 12 is provided on the surface of the substrate, and electrodes Al, a2, a, , a, is formed.
Al,a2,a3,a4の上には、半導体素子を取外し
たのち、余剰のはんだ −が除去され、新しい半導体素
子を取付ける際に許容される量のはんだ13が付着して
いる。14は素子にして、前記電極al〜A4に対応す
る電極B,,b2,b3,b4が形成され、この電極b
l〜B,上には各々はんだで形成された接続用の突起S
l5が形成されている。After removing the semiconductor element, excess solder is removed on Al, a2, a3, and a4, and a permissible amount of solder 13 is adhered when attaching a new semiconductor element. 14 is an element, and electrodes B, , b2, b3, b4 corresponding to the electrodes al to A4 are formed, and this electrode b
l to B, each has a connection protrusion S formed with solder on the top.
l5 is formed.
16はノズルにして、気体供給源(図示せず)に接続さ
れ、素子14に向けて気体を吹付けるようになつている
。A nozzle 16 is connected to a gas supply source (not shown) and is configured to spray gas toward the element 14.
ITは赤外線ヒータにして、赤外線を発生するランプ1
8と、反射鏡19で構成され、基板11をはさんで 3
ノズル16と対向するように配置されている。上記の構
成において、基板11上に素子14を定置したのち、ノ
ズル16から気体を素子14に吹付けつつ、ランプ18
を点灯して、基板11を裏面から加熱する。基板11が
はんだ13および突起 415の溶融温度以上に加熱さ
れ、その熱が基板11、導体12を通してはんだ13と
突起15に伝えられると、はんだ13と突起15は溶融
し、基板11と素子14は接合される。そして、ランプ
18を消灯し、はんだ13と突起15が凝固すれば素子
14の取付けが終る。なお、上記実施例において、基板
11と素子14の間の相対位置は、はんだ13と突起1
5に塗布されたフラツクスの粘度によつて、その位置ず
れを防止するようにしてもよい。IT is an infrared heater and lamp 1 generates infrared light.
8 and a reflecting mirror 19, with a substrate 11 in between.
It is arranged to face the nozzle 16. In the above configuration, after the element 14 is placed on the substrate 11, the lamp 18 is
is turned on to heat the substrate 11 from the back side. When the substrate 11 is heated to a temperature higher than the melting temperature of the solder 13 and the protrusion 415, and the heat is transmitted to the solder 13 and the protrusion 15 through the substrate 11 and the conductor 12, the solder 13 and the protrusion 15 melt, and the substrate 11 and the element 14 are Joined. Then, when the lamp 18 is turned off and the solder 13 and the protrusion 15 solidify, the attachment of the element 14 is completed. In the above embodiment, the relative position between the substrate 11 and the element 14 is such that the solder 13 and the protrusion 1
The viscosity of the flux applied to 5 may be used to prevent its displacement.
また、ノズル16から吹出される気体は、素子取付作業
の条件、たとえば、加熱によるフラツクスの炭化に対す
る許容量によつて、空気あるいは、アルゴン、ヘリウム
、窒素等の不活性ガス等を適宜選択して用いる。The gas blown out from the nozzle 16 may be air or an inert gas such as argon, helium, nitrogen, etc., as appropriate, depending on the conditions of the element installation work, for example, the tolerance for carbonization of flux due to heating. use
また、素子14に吹付ける気体の温度を室温にすれば、
素子14が冷却されるため、加熱による素子14の特性
の劣下を防止することができる。また、加熱手段として
、赤外線ヒータITの代りに熱風吹付装置を用い、はん
だ13および突起15の溶融温度以上に加熱された熱風
を基板11の裏面に吹付けるように構成してもよい。Furthermore, if the temperature of the gas blown onto the element 14 is set to room temperature,
Since the element 14 is cooled, deterioration of the characteristics of the element 14 due to heating can be prevented. Further, as the heating means, a hot air blowing device may be used instead of the infrared heater IT, and hot air heated to a temperature higher than the melting temperature of the solder 13 and the protrusions 15 may be sprayed onto the back surface of the substrate 11.
第2図ないし第4図は本発明の第2の実施例を示すもの
で、同図において、第1図と同じものは同じ符号を付け
て示してある。2 to 4 show a second embodiment of the present invention, in which the same parts as in FIG. 1 are designated by the same reference numerals.
1γは赤外線スボツトヒータにして、赤外線を発生する
ランプ18と、赤外線を所定の範囲に集光するための反
射鏡1,とから成つている。1γ is an infrared spot heater, and consists of a lamp 18 that generates infrared rays, and a reflector 1 that focuses the infrared rays in a predetermined range.
15はノズルにして、その開口部の近くにノズル15内
の圧力を検出する圧力検出器20が取付けらている。15 is a nozzle, and a pressure detector 20 for detecting the pressure inside the nozzle 15 is attached near the opening of the nozzle.
21は予熱盤にして、素子14を取付ける基板11の搭
載部の裏面が露出する穴22が形成されている。Reference numeral 21 denotes a preheating plate, and a hole 22 is formed through which the back surface of the mounting portion of the substrate 11 on which the element 14 is mounted is exposed.
予熱盤21は図示していない匍脚装置に接続され、基板
11上のはんだ13と素子14の突起15の溶融温度よ
り低い所定の温度になるように加熱制御されている。上
記の構成において、第2図に示すように素子14を定置
した基板11をその搭載部の離面が穴22から露出する
ように予熱盤21上に載置し、所定の温度に加熱されて
いる予熱盤21によつて基板11全体を予熱すると共に
、素子14と所定の間隔D,で対向するノズル15から
所定の圧力で素子14に気体を吹付けつつランプ18を
点灯して加熱を行なう。The preheating plate 21 is connected to a pedestal device (not shown), and is heated to a predetermined temperature lower than the melting temperature of the solder 13 on the substrate 11 and the protrusion 15 of the element 14. In the above configuration, as shown in FIG. 2, the substrate 11 on which the element 14 is fixed is placed on the preheating plate 21 so that the outer surface of the mounting part is exposed through the hole 22, and is heated to a predetermined temperature. The entire substrate 11 is preheated by a preheating plate 21, and the lamp 18 is turned on while blowing gas onto the element 14 at a predetermined pressure from a nozzle 15 facing the element 14 at a predetermined distance D to perform heating. .
そして、はんだ13と突起15がその溶融温度に加熱さ
れると、第3図に示すように、突起15とはんだ13が
融合し、基板11と素子14の取付けが完了する。この
とき、はんだ13と突起15の融合が始まると、第4図
に示す如く、基板11に対し素子14が下降するため、
素子14とノズル16’の間隔dlがD2に拡大される
。このため、ノズル15内の圧力が下り検出器20によ
つてはんだ13ど突起15の溶融開始が検出される。こ
の検出器20の信号を制御手段(図示せず)に入力し、
所定の時間経過後、ランプ18を消灯する。そしてはん
だ1テが凝固すれば素子14の取付けは完了する。この
ようにして、素子14の取付けを行なうことによつて、
加熱を必要最小限に制御し、基板11の過熱を防止する
ことができる。Then, when the solder 13 and the protrusion 15 are heated to their melting temperature, the protrusion 15 and the solder 13 are fused, as shown in FIG. 3, and the attachment of the substrate 11 and the element 14 is completed. At this time, when the solder 13 and the protrusion 15 begin to fuse, the element 14 descends relative to the substrate 11 as shown in FIG.
The distance dl between the element 14 and the nozzle 16' is increased to D2. Therefore, the pressure inside the nozzle 15 decreases and the detector 20 detects the start of melting of the solder 13 and the protrusion 15. The signal of this detector 20 is inputted to a control means (not shown),
After a predetermined period of time has elapsed, the lamp 18 is turned off. When the solder 1 is solidified, the attachment of the element 14 is completed. By attaching the element 14 in this way,
Heating can be controlled to the minimum necessary and overheating of the substrate 11 can be prevented.
また、予熱盤21を用いることによつて、予じめ設定さ
れた温度以上になると、基板11を冷却する働きをする
ため、基板11の過熱による変形や割れを防止すると共
に、一点を集中加熱した場合に発生する基板の割れを防
止することができる。In addition, by using the preheating plate 21, it works to cool the board 11 when the temperature exceeds a preset temperature, so it prevents the board 11 from deforming or cracking due to overheating, and heats one point centrally. This can prevent cracks in the substrate that would otherwise occur.
なお、上記実施例においても、赤外線スポツトヒータI
Vの代りに熱風吹付装置を用いてもよいことはいうまで
もない。この場合には、検出器20の出力によつて熱風
を送るフアンを止めるようにすればよい。第5図は本発
明の第3図の実施例を示すもので、同図において、第1
図なιル第4図と同じものは同じ符号を付けて示してあ
る。Note that in the above embodiment as well, the infrared spot heater I
Needless to say, a hot air blowing device may be used instead of the V. In this case, the fan that sends hot air may be stopped based on the output of the detector 20. FIG. 5 shows an embodiment of the present invention shown in FIG.
Components that are the same as those in FIG. 4 are designated by the same reference numerals.
25はベースにして、一対の支柱26,26’と、枠2
Tが配置されている。25 is a base, a pair of supports 26, 26', and a frame 2.
T is placed.
枠2Tの内部には赤外線スポツトヒータIT’が収納さ
れ、かつその上端には断熱材28を介して予熱盤21を
載置している。29はXYテーブルにして、支柱26に
支えられ、その上端に固定した保持具30を、前記予熱
盤上でXY方向に移動させ、保持具30に保持した基板
11の素子取付位置を予熱盤21の穴22上に位置決め
する。An infrared spot heater IT' is housed inside the frame 2T, and a preheating plate 21 is placed on the upper end thereof via a heat insulating material 28. Reference numeral 29 is an XY table, and a holder 30 supported by a column 26 and fixed to the upper end thereof is moved in the XY direction on the preheating plate, and the element mounting position of the substrate 11 held on the holder 30 is set on the preheating plate 21. position on the hole 22 of.
31はXYテーブルにして、支柱26’上に固定され、
かつ、その上端に固定したガイド部材32に昇降可能に
支持された支持部材33を介し、ノズルIWをその軸心
を中心として回転可能に支持している。31 is an XY table fixed on the support 26',
Further, the nozzle IW is rotatably supported around its axis via a support member 33 that is movably supported up and down by a guide member 32 fixed to the upper end thereof.
ノズル16’の回転は、ツマミ34を回して行なうよう
にしてある。前記ノズル15の上端は、電磁式の切替バ
ルブ35を介して気体供給源36と真空供給源3Tに接
続されている。前記ベース25に固定された支柱38に
は、中央部にアーム39を介して半透明鏡40が支持さ
れ、かつ上端部には観察光学系41が固定されている。
そして、観察光学系41でノズル1ffの下端に吸着保
持された素子14の突起15と基板11上の電極13の
像が重なるように見えたとき、基板11と素子14の整
合が完了するようになつている。上記の構成において、
交換すべき素子を取外し、基板の電極上に残存するはん
だを許容量以下になるように十分に除去したのち、ペー
ストを塗布した基板11を予熱盤21上に載置し、保持
具30で保持し、XYテーブル29により素子取付け位
置が予熱盤21の穴22上に位置するように調整する′
。The nozzle 16' is rotated by turning a knob 34. The upper end of the nozzle 15 is connected to a gas supply source 36 and a vacuum supply source 3T via an electromagnetic switching valve 35. A semi-transparent mirror 40 is supported at the center of the support column 38 fixed to the base 25 via an arm 39, and an observation optical system 41 is fixed to the upper end.
Then, when the image of the protrusion 15 of the element 14 suctioned and held at the lower end of the nozzle 1ff and the image of the electrode 13 on the substrate 11 appear to overlap in the observation optical system 41, the alignment between the substrate 11 and the element 14 is completed. It's summery. In the above configuration,
After removing the element to be replaced and sufficiently removing the solder remaining on the electrodes of the board so that it is below the allowable amount, the board 11 coated with paste is placed on the preheating plate 21 and held by the holder 30. Then, adjust the element mounting position using the XY table 29 so that it is located above the hole 22 of the preheating plate 21.
.
このとき、予熱盤21は、接合用のはんだの溶融温度よ
り30〜60℃位低い温度に予熱されている。一方ノズ
ル15の下端には、突起15にフラツクスが塗布された
新しく取付けるべき素子14が保持されている。この状
態で、観察光学系41をのぞきながら、XYテーブル3
1およびつまみ34を動かして、基板11の電極と、素
子14の突起15が重なつて見えるようにノズル15を
移動させ素子14の整合を行なう。整合が終つたのち、
ノズル16’を下降させ、素子14を基板11上に定置
する。そして、切替バルブ35を切替えて、ノズル15
による保持を解放すると共に、素子14に向けて所定の
圧力の空気を吹付けつつ、ノズル16’を上昇させ、素
子14とノズル16’の間に所定のギヤツプを形成する
。このとき、素子14は、前記フラツクスの粘着力によ
つて基板11上に定置された状態を保つている。この状
態で、ノズル15より素子14に空気を吹付けつつ、ラ
ンプ18を点灯する。すると、穴22から露出する基板
11の裏面が加熱され、その熱が基板11を通り、電極
を経て突起15に伝えられ、突起15を溶融させて基板
11と素子14を接合する。このとき、赤外線が照射さ
れる基板11の周囲は、予熱盤21によつて突起15の
溶融温度以下に冷却される。また取付ける素子14も、
ノズル15から吹付けられる空気によつて冷却されるた
め、特性の劣下を防止することができる。さらに、取付
けるべき素子14の周囲の素子14もノズル16’から
吹出される空気によつて冷却されるので、熱の影響を受
けることが少ない。そして、突起15が溶融して素子1
4が下ると、ノズル1ff内の圧力が低下し、検出器2
0によつて突起の溶融、すなわち、素子14と基板11
の接合が検出される。この検出器20の検出信号を受け
た制御装置42は、所定時間経過後ランプ18を消灯す
る。このようにして、突起15が溶融したはんだが凝固
すれば、素子14の取付けが完了する。第6図は本発明
の第4の実施例を示すもので、同図において、第5図と
同じものは同じ符号を付けて示してある。At this time, the preheating plate 21 is preheated to a temperature approximately 30 to 60° C. lower than the melting temperature of the joining solder. On the other hand, the lower end of the nozzle 15 holds an element 14 to be newly installed, the protrusion 15 of which has been coated with flux. In this state, while looking through the observation optical system 41,
1 and knob 34 to move the nozzle 15 and align the element 14 so that the electrode on the substrate 11 and the protrusion 15 on the element 14 appear to overlap. After the alignment is complete,
The nozzle 16' is lowered and the element 14 is placed on the substrate 11. Then, by switching the switching valve 35, the nozzle 15
At the same time, while blowing air at a predetermined pressure toward the element 14, the nozzle 16' is raised to form a predetermined gap between the element 14 and the nozzle 16'. At this time, the element 14 remains fixedly placed on the substrate 11 due to the adhesive force of the flux. In this state, the lamp 18 is turned on while blowing air onto the element 14 from the nozzle 15. Then, the back surface of the substrate 11 exposed through the hole 22 is heated, and the heat passes through the substrate 11 and is transmitted to the protrusion 15 via the electrode, melting the protrusion 15 and joining the substrate 11 and the element 14. At this time, the area around the substrate 11 to which the infrared rays are irradiated is cooled down to a temperature below the melting temperature of the protrusion 15 by the preheating plate 21. In addition, the element 14 to be attached is also
Since it is cooled by the air blown from the nozzle 15, deterioration of characteristics can be prevented. Furthermore, since the elements 14 surrounding the element 14 to be attached are also cooled by the air blown out from the nozzle 16', they are less affected by heat. Then, the protrusion 15 melts and the element 1
4 decreases, the pressure inside the nozzle 1ff decreases, and the detector 2
0 melts the protrusion, that is, the element 14 and the substrate 11
The junction of is detected. Upon receiving the detection signal from the detector 20, the control device 42 turns off the lamp 18 after a predetermined period of time has elapsed. In this way, when the solder melted on the protrusion 15 solidifies, the attachment of the element 14 is completed. FIG. 6 shows a fourth embodiment of the present invention, in which the same parts as in FIG. 5 are designated by the same reference numerals.
支柱2ffには、矢印B方向に回転自在な鍔45が支持
され、この鍔45に軸46を介して矢印C方向に回転可
能な遮へい板47が支持されている。遮へい板4Tには
、予熱盤21の穴22と対向する穴48が形成され、そ
の周縁に筒状の突起49が形成されている。50は温度
検出器にして、ノズル16’の吹出口の近くに取付けら
れている。A collar 45 rotatable in the direction of arrow B is supported on the support column 2ff, and a shielding plate 47 rotatable in the direction of arrow C is supported on the collar 45 via a shaft 46. A hole 48 facing the hole 22 of the preheating plate 21 is formed in the shielding plate 4T, and a cylindrical projection 49 is formed on the periphery of the hole 48. A temperature sensor 50 is installed near the outlet of the nozzle 16'.
ノズル16’の上端は、可撓管51を介して加熱タンク
52に接続されている。この加熱タンク52には、ヒー
タ53とバルブ54が設けられ、タンク51内に送り込
まれるたとえば窒素ガス等の不活性ガスを所定の温度に
加熱すると共に、バルブ54を開閉し、ノズルIWへの
供給、遮断を行なうようになつている。また、ノズル1
ffは、バルブ55および可撓管56を介して真空供給
源に接続されている。前記各ランプ18、検出器20、
温度検出器50、ヒータ53、バルブ54およびバルブ
55は、各々図示していない制御装置に接続され、制御
装置によつてノズル15による素子14の吸着と窒素ガ
スの吹付の切替え、ノズルIflから吹出される窒素ガ
スの温度の制御、ランプ18の点灯と消灯および窒素ガ
スの吹出しと遮断の制御が行なわれる。上記の構成にお
いて、前記実施例と同様にして、基板11を所定の温度
に加熱された予熱盤21上に位置決め保持し、かつ、バ
ルブ54を閉めると共にバルブ55を開き、ノズル1ぎ
を真空供給源に接続して、ノズルIWの下端に素子14
を保持し、基板11の電極に対し素子14を整合したの
ち、遮へい板4Tを回動させ、突起49の開口端を基板
11と接触するように基板11上に定置させる。The upper end of the nozzle 16' is connected to a heating tank 52 via a flexible tube 51. This heating tank 52 is provided with a heater 53 and a valve 54, which heats an inert gas such as nitrogen gas fed into the tank 51 to a predetermined temperature, and opens and closes the valve 54 to supply the gas to the nozzle IW. , and are beginning to perform a cutoff. Also, nozzle 1
ff is connected to a vacuum source via valve 55 and flexible tube 56. Each of the lamps 18, the detector 20,
The temperature detector 50, the heater 53, the valve 54, and the valve 55 are each connected to a control device (not shown), and the control device switches between adsorption of the element 14 by the nozzle 15 and blowing of nitrogen gas, and blowing out from the nozzle Ifl. The temperature of the nitrogen gas is controlled, the lighting and extinguishing of the lamp 18, and the blowing and shutting off of the nitrogen gas are controlled. In the above configuration, the substrate 11 is positioned and held on the preheating plate 21 heated to a predetermined temperature, and the valve 54 is closed and the valve 55 is opened in the same manner as in the above embodiment, and the first nozzle is supplied with vacuum. element 14 at the lower end of the nozzle IW.
After holding the element 14 and aligning the element 14 with the electrodes of the substrate 11, the shielding plate 4T is rotated and placed on the substrate 11 so that the open end of the protrusion 49 comes into contact with the substrate 11.
ついで、ノズル15を下降させ、基板11の電極上に素
子14を定置させ、バルブ55を閉めると共に、バルブ
54を開き、素子14に、接合用の突起15の溶融温度
以上に加熱された窒素ガスを吹付けつつノズルIWを上
昇させ、素子14の土端面とノズルIWの開口部の間に
所定のギヤツプを形成する。同時に、ランプ18を点灯
し、基板11の下面を赤外線で加熱する。そして、素子
14の突起15が溶融し、基板11と素子14が接合さ
れると、素子14が下降するため、ノズル16内の圧力
が下り検出器20で検出される。この検出信号に基づい
て、ランプ18が消灯されると同時に、バルブ54が閉
じられる。そして、接合部が凝固すれば素子14の取付
けが完了する。上記において、ノズルIWから吹出され
る窒素ガスの温度は、温度検出器50で検出され、制御
装置を介してヒータ53に供給する電流を制御すること
により所定の範囲に制御される。また、取付ける素子1
4は、突起15を形成するはんだの溶融温度以上に加熱
された窒素ガスが吹付けられ、高温に加熱されるが、基
板11の下と素子14の上の両方から加熱するので、極
めて短時間で接合することができ、その熱の影響を極め
て小さくすることができる。また、取付けるべき素子1
4の周囲にある他の素子14は、遮へい板4Tの突起4
9で高温の窒素ガスが遮ぎられるため、窒素ガスを吹付
けられることはなく、予熱盤21の熱が伝えられるだけ
で特性の劣下は発生しない。なお、上記第3および第4
の実施例において、赤外線ヒータに変えて熱風を吹付け
るようにしてもよい。また、半透明鏡40は、その上面
がノズル15に吸着された素子14の突起15と基板1
1の電極との中間に位置するように配置すると共に、ア
ーム39に摺動可能に支持し、整合時のみ、所要の位置
まで突出するように構成することができるのはいうまで
もない。また、各実施例におけるXYテーブル31は、
省略してもよい。この場合、ノズルIffと予熱盤21
の穴22の中心を一致させておくことが望ましい。さら
に、検出器20は、ノズルIff内の圧力を検出するよ
うにしたが、ノズル16’から吹出される気体の流量の
変化を検出するようにしてもよい。以上述べた如く、本
発明によれば、素子の電極上にはんだ形成された接続用
の突起を基板上に形成された電極上に整合定置させると
共に、素子にその上方から気体を吹付け、かつ基板の裏
面から加熱し、前記突起を溶融させて、基板に素子を取
付けるようにしたので、取付けるべき素子および取付け
るべき素子に隣接する他の素子を必要以上に加熱するこ
となく、取付けを行なうことができ、素子の特性の劣下
、接合部の信頼性の低下を防止することができる。Next, the nozzle 15 is lowered, the element 14 is placed on the electrode of the substrate 11, the valve 55 is closed and the valve 54 is opened, and the element 14 is injected with nitrogen gas heated to a temperature higher than the melting temperature of the bonding protrusion 15. While spraying, the nozzle IW is raised to form a predetermined gap between the soil end surface of the element 14 and the opening of the nozzle IW. At the same time, the lamp 18 is turned on and the lower surface of the substrate 11 is heated with infrared rays. Then, when the protrusion 15 of the element 14 melts and the substrate 11 and the element 14 are bonded, the element 14 descends, so that the pressure inside the nozzle 16 decreases and is detected by the detector 20. Based on this detection signal, the lamp 18 is turned off and at the same time the valve 54 is closed. Then, when the bonded portion solidifies, the attachment of the element 14 is completed. In the above, the temperature of the nitrogen gas blown out from the nozzle IW is detected by the temperature detector 50, and is controlled within a predetermined range by controlling the current supplied to the heater 53 via the control device. Also, the element 1 to be installed
4 is heated to a high temperature by spraying nitrogen gas heated to a temperature higher than the melting temperature of the solder forming the protrusion 15, but it is heated from both below the substrate 11 and above the element 14, so it takes only a very short time. The effect of heat can be extremely minimized. Also, element 1 to be installed
The other elements 14 around the shielding plate 4T are the protrusions 4 of the shielding plate 4T.
Since the high-temperature nitrogen gas is blocked by the point 9, the nitrogen gas is not sprayed, and only the heat from the preheating plate 21 is transferred, and no deterioration of the characteristics occurs. In addition, the above third and fourth
In this embodiment, hot air may be blown instead of the infrared heater. Further, the semi-transparent mirror 40 has its upper surface connected to the protrusion 15 of the element 14 which is attracted to the nozzle 15 and the substrate 1.
Needless to say, it can be arranged so as to be located midway between the first and second electrodes, be slidably supported by the arm 39, and be configured to protrude to a desired position only during alignment. Furthermore, the XY table 31 in each embodiment is
May be omitted. In this case, the nozzle If and the preheating plate 21
It is desirable that the centers of the holes 22 are aligned. Further, although the detector 20 is configured to detect the pressure within the nozzle Iff, it may also be configured to detect a change in the flow rate of gas blown out from the nozzle 16'. As described above, according to the present invention, the connection protrusions soldered on the electrodes of the element are aligned and placed on the electrodes formed on the substrate, and gas is blown onto the element from above, and Since the element is attached to the substrate by heating from the back side of the substrate and melting the protrusions, the attachment can be carried out without unnecessarily heating the element to be attached and other elements adjacent to the element to be attached. This makes it possible to prevent deterioration of device characteristics and reliability of joints.
また、素子に吹付ける気体の圧力もしくは流量を検出し
、接合用の突起を形成するはんだの溶融開始時を検知す
るようにしたので、作業の正確な制御を行なうことがで
き、接合不良および素子の特性不良をなくし、素子の交
換作業の作業性を向上させることができるだけでなく、
歩留りを大巾に向上させることができる。さらに、素子
の上方から熱風を吹付けることにより、作業時間を大巾
に短縮し、素子の特性や接合部の信頼性を低下させるこ
となく、高速で素子の取付けを行なうことができるなど
、工業上極めて大きな効果がある。In addition, by detecting the pressure or flow rate of the gas blown onto the element, it is possible to detect when the solder that forms the bonding protrusions begins to melt, making it possible to accurately control the work and prevent defective joints and elements. It not only eliminates characteristic defects and improves the workability of element replacement work, but also
Yield can be greatly improved. Furthermore, by blowing hot air from above the element, the work time can be greatly shortened and the element can be mounted at high speed without deteriorating the characteristics of the element or the reliability of the joints. It has an extremely large effect.
第1図は本発明の基本原理を示す要部の構成図、第2図
は本発明の一実施例を示す装置の要部を示す正面図、第
3図は半導体素子を基板に取付けた状態を示す正面図、
第4図は半導体素子の取付け過程を示す拡大図、第5図
は本発明の第3の実施例を示す素子の取付け装置の正面
部分断面図、第6図は本発明の第4の実施例を示す素子
の取付装置の正面部分断面図である。
11・・・・・・基板、14・・・・・・素子、15・
・・・・・突起、al゛A4゜゜e゜゜゜電極、BlN
b4゜゜゜゜゜’電極、16,Iff・・・・・・ノズ
ル、1T・・・・・・赤外線ヒータ、17’・・・・・
・赤外線スポツトヒータ、20・・・・・・検出器、2
1・・・・・・予熱盤、22・・・・・・穴、29,3
1・・・・・・XYテーブル、30・・・・・・保持具
、36・・・・・・気体供給源、40・・・・・・半透
明鏡、41・・・・・・観察光学系、42・・・・・・
制御装置、4T・・・ ・・・遮へい板、48・・・・
・・穴、49・・・・・・突起、50・・・・・・温度
検出器、52・・・・・・加熱タンク、53・・・・・
化一タ、54・・・・・・バルブ。Fig. 1 is a configuration diagram of the main parts showing the basic principle of the present invention, Fig. 2 is a front view showing the main parts of the device showing an embodiment of the invention, and Fig. 3 is a state in which the semiconductor element is attached to the substrate. A front view showing
FIG. 4 is an enlarged view showing the mounting process of a semiconductor element, FIG. 5 is a partial front sectional view of a device mounting apparatus showing a third embodiment of the present invention, and FIG. 6 is a fourth embodiment of the present invention. FIG. 3 is a front partial sectional view of the device mounting device showing the device mounting device. 11...Substrate, 14...Element, 15.
...Protrusion, al゛A4゜゜e゜゜゜electrode, BIN
b4゜゜゜゜゜' Electrode, 16, Iff... Nozzle, 1T... Infrared heater, 17'...
・Infrared spot heater, 20...Detector, 2
1... Preheating plate, 22... Hole, 29, 3
1...XY table, 30...Holder, 36...Gas supply source, 40...Semi-transparent mirror, 41...Observation Optical system, 42...
Control device, 4T... Shielding plate, 48...
... Hole, 49 ... Protrusion, 50 ... Temperature detector, 52 ... Heating tank, 53 ...
Chemical, 54... Valve.
Claims (1)
突起を、基板の表面に形成された電極上に載置し、はん
だを溶融させて基板に半導体素子を取付ける半導体素子
の取付装置において、中央に基板の半導体素子の取付位
置に対応する穴が形成され、かつ全体が前記はんだの溶
融温度より低い所定の温度に加熱された予熱盤と、この
予熱盤の下方に配置され、予熱盤の穴を通して予熱盤上
に載置された基板の露出部をはんだの溶融温度以上の温
度に加熱する加熱手段と基板上に載置された半導体素子
に対向するように配置され、半導体素子に気体を吹付け
て半導体素子の接合用の突起を基板の電極に押付ける加
圧手段とを設けたことを特徴とする半導体素子の取付装
置。 2 半導体素子の電極上にはんだで形成された接合用の
突起を、基板の表面に形成された電極上に載置し、はん
だを溶融させて基板に半導体素子を取付ける半導体素子
の取付装置において、中央に基板の半導体素子の取付位
置に対応する穴が形成され、かつ全体が前記はんだの溶
融温度より低い所定の温度に加熱された予熱盤と、この
予熱盤の下方に配置され、予熱盤の穴を通して予熱盤上
に載置された基板の露出部をはんだの溶融温度以上の温
度に加熱する加熱手段と、基板上に載置された半導体素
子に対向するように配置され、半導体素子に気体を吹付
けて半導体素子の接合用の突起を基板の電極に押付ける
加圧手段と、この加圧手段に付設され、加圧手段内の気
体の圧力を検知して接合終了時を検出する検出手段とを
設けたことを特徴とする半導体素子の取付装置。[Claims] 1. A semiconductor device in which a bonding protrusion formed with solder on an electrode of a semiconductor element is placed on an electrode formed on a surface of a substrate, and the semiconductor element is attached to the substrate by melting the solder. The device mounting device includes a preheating plate, which has a hole formed in the center corresponding to the mounting position of the semiconductor element on the board, and is heated entirely to a predetermined temperature lower than the melting temperature of the solder, and a preheating plate below the preheating plate. A heating means for heating an exposed portion of the substrate placed on the preheating plate to a temperature higher than the melting temperature of the solder through a hole in the preheating plate and a semiconductor element placed on the substrate. 1. A mounting device for a semiconductor device, comprising a pressurizing means for blowing gas onto the semiconductor device to press a bonding protrusion of the semiconductor device against an electrode of a substrate. 2. In a semiconductor element mounting device for attaching a semiconductor element to a substrate by placing a bonding protrusion formed with solder on an electrode of a semiconductor element on an electrode formed on a surface of a substrate and melting the solder, A preheating plate has a hole formed in the center corresponding to the mounting position of the semiconductor element on the board, and the whole is heated to a predetermined temperature lower than the melting temperature of the solder. A heating means heats the exposed part of the board placed on the preheating plate through the hole to a temperature higher than the melting temperature of the solder, and a heating means is arranged to face the semiconductor element placed on the substrate, and the heating means heats the exposed part of the board placed on the preheating board to a temperature higher than the melting temperature of the solder. A pressurizing means for pressing the protrusions for bonding the semiconductor elements against the electrodes of the substrate by spraying the pressure, and a detection device attached to this pressurizing means for detecting the pressure of the gas in the pressurizing means to detect when bonding is completed. 1. A mounting device for a semiconductor element, comprising means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54154358A JPS5936419B2 (en) | 1979-11-30 | 1979-11-30 | Semiconductor device mounting equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54154358A JPS5936419B2 (en) | 1979-11-30 | 1979-11-30 | Semiconductor device mounting equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678133A JPS5678133A (en) | 1981-06-26 |
| JPS5936419B2 true JPS5936419B2 (en) | 1984-09-04 |
Family
ID=15582403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54154358A Expired JPS5936419B2 (en) | 1979-11-30 | 1979-11-30 | Semiconductor device mounting equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5936419B2 (en) |
-
1979
- 1979-11-30 JP JP54154358A patent/JPS5936419B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5678133A (en) | 1981-06-26 |
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