JPS5937616B2 - Semiconductor circuit breaker - Google Patents
Semiconductor circuit breakerInfo
- Publication number
- JPS5937616B2 JPS5937616B2 JP1802876A JP1802876A JPS5937616B2 JP S5937616 B2 JPS5937616 B2 JP S5937616B2 JP 1802876 A JP1802876 A JP 1802876A JP 1802876 A JP1802876 A JP 1802876A JP S5937616 B2 JPS5937616 B2 JP S5937616B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- current
- circuit
- section
- reverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
Landscapes
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Description
【発明の詳細な説明】
本発明は開閉素子に逆導通サイリスタを使用した限流し
ゃ新方式の半導体しゃ断器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a new type of current-limiting semiconductor breaker using a reverse conducting thyristor as a switching element.
第1図に示す従来の開閉素子として逆導通サイリスタ1
6−1−1を使用した半導体しゃ断器はサイリスタを使
用したものに比べ、大電流で高耐圧な高速スイッチング
サイリスタが得られやすい特長がある。Reverse conducting thyristor 1 as a conventional switching element shown in Fig. 1
A semiconductor breaker using 6-1-1 has the advantage that it is easier to obtain a high-speed switching thyristor with a large current and high withstand voltage, compared to one using a thyristor.
半導体しゃ断器は短絡事故等による故障電流が主回路に
流れるとこの故障電流を変流器2により検出し、この検
出値が設定値をこえると制御回路12に伝えられて逆導
通サイリスタ16−1−1のサイリスタ部のゲート信号
が停止されると共に補助サイリスタ17にゲート信号を
供給し、逆導通サイリスタ16−1iのサイリスタ部に
転流回路からの逆電流を供給することによって故障電流
をしゃ断する方式をとっていた。When a fault current due to a short circuit or the like flows through the main circuit, the semiconductor circuit breaker detects this fault current with a current transformer 2, and when this detected value exceeds a set value, it is transmitted to the control circuit 12 and reverse conducting thyristor 16-1 When the gate signal of the thyristor section -1 is stopped, the gate signal is supplied to the auxiliary thyristor 17, and the reverse current from the commutation circuit is supplied to the thyristor section of the reverse conduction thyristor 16-1i, thereby cutting off the fault current. He followed a method.
この方式にすると逆導通サイリスタ16−1−1の素子
内部ではサイリスクに逆並列に接続されたダイオード部
は逆電流を供給する転流回路の印加電圧極性に対して順
方向となるため、ダイオード部に他の相からの故障電流
が流れているダイオード部には更にサイリスタ部には逆
電流となる電流がダイオード部に対しては順方向の電流
となって重畳されるため大きな電流が流れる欠点があっ
た。If this method is used, inside the element of the reverse conduction thyristor 16-1-1, the diode section connected in antiparallel to the thyristor will be in the forward direction with respect to the applied voltage polarity of the commutation circuit that supplies reverse current. The defect is that a large current flows in the diode part, where the fault current from other phases flows, and in the thyristor part, because the reverse current is superimposed on the diode part as a forward current. there were.
然るに一般の逆導通サイリスタはサイリスタ部より、ダ
イオード部の1サイクル定格サージ電流は小さく、素子
の選定にはサージ電流耐量に充分な検討を要し複雑であ
った。However, in a general reverse conduction thyristor, the rated surge current per cycle of the diode section is smaller than that of the thyristor section, and the selection of elements is complicated because sufficient consideration must be given to the surge current withstand capacity.
更に転流回路のコンデンサの充電電荷がダイオード部を
通して逃げられてしまうため、この分を見込んで充電々
荷を大きくとっておくことを余儀なくされていた。Furthermore, since the charge in the capacitor of the commutation circuit escapes through the diode section, it is necessary to reserve a large charge to account for this amount.
本発明は以上の欠点を除去するため逆導通サイリスタの
接続を逆にしてダイオード部に逆電流が流れるのを防ぎ
、サージ電流耐量が大きく素子の選定が容易で確実にし
ゃ断動作を行う半導体しゃ断器を提供することを目的と
する。In order to eliminate the above-mentioned drawbacks, the present invention reverses the connection of the reverse conduction thyristor to prevent reverse current from flowing into the diode section, and provides a semiconductor breaker that has a large surge current withstand capacity, facilitates the selection of elements, and performs reliable breaker operation. The purpose is to provide
以下本発明を図を参照して説明する。The present invention will be explained below with reference to the drawings.
図に於て
1は3相電源、2は変流器、2−1はR相変流器、2−
2はS相変流器、2−3はT相変流器、3はしゃ断部、
3−1はR相しゃ断部、3−1−1は逆導通サイリスタ
、3−1−2はりアクドル、3−2はS相しゃ断部、3
−3はT相しゃ断部、4は3相負荷、5は補助サイリス
タ、5−1はR相補助サイリスタ、5−2はS相補助サ
イリスタ、5−3はT相補助サイリスタ、6は補助ダイ
オード、6−1はR相補助ダイオード、6−2はS相補
助ダイオード、6−3はT相補助ダイオード、7は通電
々流離性検出回路、γ−1はR相通型々流極性検出回路
、7−2はS相通型々流極性検出回路、7−3はT相電
々流極性検出回路、8はサージ吸収回路、8−1はコン
デンサ、8−2は放電抵抗、9は充電抵抗、10は充電
回路、1〇−1は充電コンデンサ、10−2は放電抵抗
、11は短絡電流検出回路、12は制御回路、13は単
相全波整流器、13−1〜13−4はダイオード、14
は補助変圧器、14−1は補助変圧器1次巻線、14−
2は補助変圧器2次巻線、15は補助電源である。In the figure, 1 is a three-phase power supply, 2 is a current transformer, 2-1 is an R-phase current transformer, 2-
2 is an S-phase current transformer, 2-3 is a T-phase current transformer, 3 is a breaker,
3-1 is an R-phase breaker, 3-1-1 is a reverse conduction thyristor, 3-1-2 is a beam axle, 3-2 is an S-phase breaker, 3
-3 is T-phase breaker, 4 is 3-phase load, 5 is auxiliary thyristor, 5-1 is R-phase auxiliary thyristor, 5-2 is S-phase auxiliary thyristor, 5-3 is T-phase auxiliary thyristor, 6 is auxiliary diode , 6-1 is an R-phase auxiliary diode, 6-2 is an S-phase auxiliary diode, 6-3 is a T-phase auxiliary diode, 7 is a current-carrying current separation detection circuit, γ-1 is an R-phase conducting current polarity detection circuit, 7-2 is an S-phase current polarity detection circuit, 7-3 is a T-phase current polarity detection circuit, 8 is a surge absorption circuit, 8-1 is a capacitor, 8-2 is a discharging resistor, 9 is a charging resistor, 10 is a charging circuit, 10-1 is a charging capacitor, 10-2 is a discharging resistor, 11 is a short-circuit current detection circuit, 12 is a control circuit, 13 is a single-phase full-wave rectifier, 13-1 to 13-4 are diodes, 14
is the auxiliary transformer, 14-1 is the auxiliary transformer primary winding, 14-
2 is an auxiliary transformer secondary winding, and 15 is an auxiliary power supply.
次に上記構成の作用を説明する。Next, the operation of the above configuration will be explained.
補助電源15から充電抵抗9を通し、更に補助変圧器1
4により適当な値に変成し、単相全波の整流器13によ
り交流を直流に変換して充電コンデンサ10−1を充電
する。Pass the charging resistor 9 from the auxiliary power supply 15, and then the auxiliary transformer 1
4 to an appropriate value, and the single-phase full-wave rectifier 13 converts the alternating current to direct current to charge the charging capacitor 10-1.
主回路の電流を変流器2により検出し更にこれを通電各
派極性検出回路7で通電々流の極性を検出する。The current in the main circuit is detected by a current transformer 2, and the polarity of each energized current is detected by a polarity detection circuit 7 for each energized current.
通電極性は逆導通サイリスタのダイオード部の通電極性
を検出する回路である。The conducting polarity is a circuit that detects the conducting polarity of the diode portion of the reverse conducting thyristor.
短絡電流検出回路11により短絡故障発生が制御回路1
2に伝えられ逆導通サイリスクへのゲート信号の供給を
ただちに停止し、更に制御回路12より通電々流離性検
出回路7に信号が送られる。Short circuit current detection circuit 11 indicates that a short circuit failure has occurred in control circuit 1.
2, the supply of the gate signal to the reverse conduction risk is immediately stopped, and furthermore, a signal is sent from the control circuit 12 to the current flow isolation detection circuit 7.
通電々流離性検出回路7はこの信号と逆導通サイリスタ
のダイオード部通電信号とのAND信号をとり、このA
ND信号が“1″レベルの相のもののみ、それに対応す
る補助サイリスタ5にゲート信号を供給する。The current separation property detection circuit 7 takes the AND signal of this signal and the diode part energization signal of the reverse conduction thyristor, and calculates this A
A gate signal is supplied to the corresponding auxiliary thyristor 5 only for the phase in which the ND signal is at the "1" level.
主回路電流は3相電源1から変流器2を通して更にしゃ
断部3を通して3相負荷4に供給される。The main circuit current is supplied from a three-phase power supply 1 to a three-phase load 4 through a current transformer 2 and a breaker 3 .
今短絡故障が発生したとすると逆導通サイリスタ3−1
−1.3−2−1.3−3−1のダイオード部の通電し
ている極性のみが通電々流離性検出回路7によりそれぞ
れ検出される。If a short circuit fault occurs now, reverse conducting thyristor 3-1
-1.3-2-1.3-3-1 Only the polarity of the energized diode portion is detected by the energization current separation detection circuit 7, respectively.
これに対応した補助サイリスタ5−1,5−2.5−3
のいづれかにゲート信号が供給されオンし、充電コンデ
ンサ10−1の充電々荷が通電している逆導通サイリス
タのダイオード部に逆電流を供給する。Auxiliary thyristor 5-1, 5-2.5-3 corresponding to this
A gate signal is supplied to one of them to turn it on, and the charged charge of the charging capacitor 10-1 supplies a reverse current to the diode section of the reverse conduction thyristor which is energized.
逆導通サイリスタの通電しているサイリスタ部の補助サ
イリスタはオフであるので逆電流は供給されない。Since the auxiliary thyristor of the energized thyristor section of the reverse conduction thyristor is off, no reverse current is supplied.
然るに通電しているダイオード部には全て逆電流が供給
されるので故障電流はしゃ断され、通電している逆導通
サイリスタのサイリスタ部の電流も保持電流以下となっ
てターンオフする。However, since a reverse current is supplied to all of the energized diode sections, the fault current is cut off, and the current in the thyristor section of the energized reverse conduction thyristor becomes less than the holding current and is turned off.
以上のように本発明は通電しているダイオード部に逆電
流を供給し故障電流をしゃ断し通電しているサイリスタ
部の電流をサイリスタの保持電流以下として故障電流を
除去するようにしたものである。As described above, the present invention supplies a reverse current to the energized diode section to cut off the fault current, thereby reducing the current in the energized thyristor section to less than the holding current of the thyristor, thereby eliminating the fault current. .
本発明の場合は従来方式のものと異なり通電側ダイオー
ド部順方向に転流回路側からの逆電流が重畳されること
がな(サージ電流耐量の小さいダイオード部を持った逆
導通サイリスタでも使用可である。In the case of the present invention, unlike the conventional method, the reverse current from the commutation circuit side is not superimposed in the forward direction of the current-carrying side diode section (it can also be used with a reverse conduction thyristor having a diode section with a small surge current capacity). It is.
故障電流の大きさとその限流開始値だけを考えて逆導通
サイリスタを選定することができ選定が容易となる。A reverse conduction thyristor can be selected by considering only the magnitude of the fault current and its current limiting start value, making selection easy.
更にダイオード部には逆方向電流しか流さないので第1
図のように順方向電流を流すことがなく極めて逆電流は
有効に使用される利点がある。Furthermore, since only reverse current flows through the diode section, the first
As shown in the figure, there is an advantage that the reverse current can be used very effectively without flowing a forward current.
第1図は従来の半導体しゃ断器を示す回路図、第2図は
本発明の半導体しゃ断器の一実施例を示す回路図である
。
1・・・・・・3相電源、2・・・・・・変流器、3・
・・・・・しゃ断部、3−1−1・・・・・・逆導通サ
イリスタ、4・・・・・・3相負荷、5・・・・・・補
助サイリスタ、6・・・・・・補助ダイオード、7・・
・・・・通電々流離性検出回路、9・・・・・・充電抵
抗、10%・・・・・・充電回路、11・・・・・・短
絡電流検出回路、12・・・・・・制御回路、14・・
・・・・補助変圧器、15・・・・・・補助電源。FIG. 1 is a circuit diagram showing a conventional semiconductor breaker, and FIG. 2 is a circuit diagram showing an embodiment of the semiconductor breaker of the present invention. 1... 3-phase power supply, 2... current transformer, 3...
..... Breaking section, 3-1-1 .... Reverse conduction thyristor, 4 .... 3-phase load, 5 ..... Auxiliary thyristor, 6 ....・Auxiliary diode, 7...
.... Current flow separation detection circuit, 9... Charging resistance, 10%... Charging circuit, 11... Short circuit current detection circuit, 12...・Control circuit, 14...
...Auxiliary transformer, 15...Auxiliary power supply.
Claims (1)
されたサイリスタ部とダイオード部からなり、常時は前
記サイリスク部にゲート信号が与えられてターンオンし
て負荷に電力を供給する逆導通サイリスタと、主回路に
故障電流が流れた場合にこの故障電流を検出する変流器
と、この変流器により故障電流の値が設定値以上になる
と出力信号を発する回路と、この出力信号により動作し
前記サイリスク部のゲート信号を停止してサイリスタ部
をターンオフさせ負荷への電力の供給を停止させるよう
にした制御回路とからなる半導体しゃ断器において、電
源に対して順方向となるように接続された前記逆導通サ
イリスタダイオード部を流れる故障電流の極性を検出し
、この検出値と逆導通サイリスタのダイオード部の通電
極性とが一致したとき出力信号を発する検出回路を設け
、かつこの出力信号により前記逆導通サイリスタダイオ
ード部に逆電流を供給すると共に前記逆導通サイリスタ
サイリスタ部のゲート信号を停止する回路を設けたこと
を特徴とする半導体しゃ断器。1 Connected between the power supply of the main circuit and the load, it consists of a thyristor part and a diode part connected in antiparallel, and normally a gate signal is applied to the thyristor part to turn it on and supply power to the load.Reverse conduction A thyristor, a current transformer that detects a fault current when it flows in the main circuit, a circuit that issues an output signal when the fault current value exceeds a set value by this current transformer, and a circuit that generates an output signal by this output signal. A semiconductor circuit breaker, which is connected in a forward direction with respect to a power source, and a control circuit that operates to stop the gate signal of the thyristor section, turn off the thyristor section, and stop supplying power to the load. a detection circuit that detects the polarity of the fault current flowing through the reverse conduction thyristor diode section and generates an output signal when the detected value matches the conduction polarity of the diode section of the reverse conduction thyristor; A semiconductor breaker comprising: a circuit that supplies a reverse current to the reverse conduction thyristor diode section and stops a gate signal of the reverse conduction thyristor thyristor section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1802876A JPS5937616B2 (en) | 1976-02-23 | 1976-02-23 | Semiconductor circuit breaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1802876A JPS5937616B2 (en) | 1976-02-23 | 1976-02-23 | Semiconductor circuit breaker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52101455A JPS52101455A (en) | 1977-08-25 |
| JPS5937616B2 true JPS5937616B2 (en) | 1984-09-11 |
Family
ID=11960202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1802876A Expired JPS5937616B2 (en) | 1976-02-23 | 1976-02-23 | Semiconductor circuit breaker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5937616B2 (en) |
-
1976
- 1976-02-23 JP JP1802876A patent/JPS5937616B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52101455A (en) | 1977-08-25 |
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