JPS5941788B2 - Rotary coating device - Google Patents
Rotary coating deviceInfo
- Publication number
- JPS5941788B2 JPS5941788B2 JP50124094A JP12409475A JPS5941788B2 JP S5941788 B2 JPS5941788 B2 JP S5941788B2 JP 50124094 A JP50124094 A JP 50124094A JP 12409475 A JP12409475 A JP 12409475A JP S5941788 B2 JPS5941788 B2 JP S5941788B2
- Authority
- JP
- Japan
- Prior art keywords
- coating device
- disk
- photoresist
- rotary coating
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
【発明の詳細な説明】 本発明は、回転式塗布装置に関するものである。[Detailed description of the invention] The present invention relates to a rotary coating device.
従来よりー般に用いられている、試料基板としての半導
体基板に対するホチレジスト等の粘住流体物の塗布法は
、第1図の如く、回転テーブル1を軸2を介して回転駆
動用モータ3に、直結成は間接結合し、モータ3を高速
回転させることに依つて、回転テーブル1を回転、駆動
させることを基本構造とした、定軸芯形回転塗付装置を
用い、回転テーブル1上に半導体基板4を減圧吸着法等
で保持させ、適量のホトレジスト5を、半導体基板4上
に滴下した後、回転テーブル1を高速回転させる事によ
つて、半導体基板4上のホトレジスト5を、遠心力で放
射状に拡散させて、半導体基板4上にホトレジスト5の
薄層を形成する方式である。この時、半導体基板4表面
上のホトレジスト5は、回転テーブル1が左向回転の場
合、第2図の矢印6の如き概略放射状の軌跡を抽いて半
導体基板4面上を周辺に向つて拡散し、周辺部に到達し
た余剰ホトレジストは、半導体基板4より離脱放出され
ることによつて、半導体基板4面上にほぼ均一なホトレ
ジスト薄膜が形成される。The method of coating a viscous fluid such as hot resist on a semiconductor substrate as a sample substrate, which has been commonly used in the past, is as shown in FIG. , the direct and indirect connections are made, and a fixed axis type rotary coating device is used, the basic structure of which is to rotate and drive the rotary table 1 by rotating the motor 3 at high speed. After holding the semiconductor substrate 4 by vacuum adsorption or the like and dropping an appropriate amount of photoresist 5 onto the semiconductor substrate 4, the rotary table 1 is rotated at high speed to remove the photoresist 5 on the semiconductor substrate 4 by centrifugal force. This method forms a thin layer of photoresist 5 on semiconductor substrate 4 by diffusing it radially. At this time, when the rotary table 1 rotates counterclockwise, the photoresist 5 on the surface of the semiconductor substrate 4 diffuses toward the periphery on the surface of the semiconductor substrate 4 along roughly radial trajectories as indicated by arrows 6 in FIG. The excess photoresist that has reached the peripheral portion is released from the semiconductor substrate 4, thereby forming a substantially uniform photoresist thin film on the surface of the semiconductor substrate 4.
しかし、このような従来の方式では、ホトレジスト5を
中心部より周辺部に対して放射状に拡散させることで、
薄膜を形成する機構に依つている関係上、半導体基板4
表面上に凹凸部、特に凸部或は、塵埃などの障害物Tが
存在した場合、障害物1の存在地点より、周辺部に向つ
て扇状形の陰影部8が形成され、同陰影部8は必然的に
ホトレス膜厚が減少し、結果的には部分的に膜厚を異に
した(ピンホール)などを含む)、ホトレジスト薄膜が
半導体基板4上に形成されることになる。However, in such a conventional method, by diffusing the photoresist 5 radially from the center to the periphery,
Because it depends on the mechanism for forming a thin film, the semiconductor substrate 4
When an uneven part, especially a convex part, or an obstacle T such as dust exists on the surface, a fan-shaped shadow part 8 is formed from the point where the obstacle 1 exists toward the peripheral part, and the shadow part 8 In this case, the photoresist film thickness inevitably decreases, and as a result, a photoresist thin film with partially different film thicknesses (including pinholes, etc.) is formed on the semiconductor substrate 4.
これは、LSIなど微細パターンを用いるホトエッチン
グでは、パターン崩れなどを招来する原因ともなる。ま
た定軸芯型回転装置を用いる関係上、半導体基板4の回
転中心は静止状態であり、中心近傍のホトレジスト5に
働く遠心力が弱いなどの要因で、周辺部に比較して中心
部の膜厚が不均一となる欠陥も生じる。This may cause pattern collapse in photoetching using fine patterns such as LSI. Furthermore, due to the use of a fixed-axis rotation device, the center of rotation of the semiconductor substrate 4 is stationary, and due to factors such as weaker centrifugal force acting on the photoresist 5 near the center, the film in the center is weaker than in the periphery. Defects resulting in non-uniform thickness also occur.
本発明は従来の射住流体物の塗布法にみられた欠陥を解
消し、試料基板を自転させるとともに同試料基板を支持
する回転盤の回転軸を移動させることにより、均質な粘
住流体物の薄膜を試料基板表面上に形成させうる回転式
塗布装置を提供することを目的とする。The present invention eliminates the defects observed in the conventional coating method of viscous fluid, and by rotating the sample substrate and moving the axis of rotation of the rotary disk that supports the sample substrate, a homogeneous viscous fluid can be applied. An object of the present invention is to provide a rotary coating device capable of forming a thin film of 100% on the surface of a sample substrate.
以下図面に従がつて本発明の回転式塗布装置を実施例に
基づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The rotary coating device of the present invention will be described below based on embodiments with reference to the drawings.
第3図{]本発明の回転式塗布装置の基本的な平面略図
であり、第4図は同断面略図である。FIG. 3 is a basic plan schematic diagram of the rotary coating device of the present invention, and FIG. 4 is a schematic cross-sectional diagram thereof.
構造は所謂自公転磯構であり、1駆動モータ9の回転は
主軸10によつて主円盤11に伝達して居り、主円盤1
11こ(ま、主軸10より偏芯させた位置fこ回転軸受
12を設け、同軸受12には補助円盤13の軸14が嵌
合してあり、補助円盤13が自由に回転出来る構造とな
つている。補助円盤13の周壁15は、主軸10と同心
円を有する固定周壁16fこ圧接して居り、固定周壁1
6の補助円盤13の周壁15が接触する部分は、硬質ゴ
ム17など、若干の弾性と摩擦係数を有する素材で形成
すると良い。なお、これは、補助円盤13の周壁15面
に形成しても良い。上記の如き構成で、回転1駆動用モ
ータ9によつて主円盤11を回転させれば、主円盤11
上の補助円盤13(ま固定周壁16面fこ沿つて公転す
ると共(こ、補助円盤13自体も軸14を中心として、
固定周壁16の摩擦により逆回転の自転運動を行なうこ
とになる。The structure is a so-called rotation-revolution rock structure, and the rotation of the 1-drive motor 9 is transmitted to the main disk 11 through the main shaft 10.
A rotary bearing 12 is provided at a position f eccentric from the main shaft 10, and the shaft 14 of the auxiliary disc 13 is fitted into the bearing 12, so that the auxiliary disc 13 can rotate freely. The peripheral wall 15 of the auxiliary disk 13 is in pressure contact with the fixed peripheral wall 16f having a concentric circle with the main shaft 10.
The portion of the auxiliary disk 13 of No. 6 that is in contact with the peripheral wall 15 is preferably formed of a material having some elasticity and a coefficient of friction, such as hard rubber 17. Note that this may be formed on the peripheral wall 15 surface of the auxiliary disk 13. With the above configuration, if the main disk 11 is rotated by the rotation 1 drive motor 9, the main disk 11
The upper auxiliary disk 13 (also revolves along the fixed peripheral wall 16 surface f), and the auxiliary disk 13 itself also revolves around the axis 14,
Due to the friction of the fixed peripheral wall 16, a reverse rotational movement is performed.
たとえば、補助円盤13の外径φ1と固定周壁16の内
径φ2の比8:10と設定し、1駆動モータ9の回転数
を3000RPMで1駆動した場合、補助円盤13{は
3000/3750RPMの高速公自転を行なう。For example, if the ratio of the outer diameter φ1 of the auxiliary disk 13 and the inner diameter φ2 of the fixed peripheral wall 16 is set to 8:10, and the rotation speed of the 1-drive motor 9 is driven once at 3000 RPM, the auxiliary disk 13 { will be driven at a high speed of 3000/3750 RPM. Performs orbital rotation.
また1公転自に於ける補助円盤13上の運動は、第5図
に示す如く、補助円盤13上の任意点Aの軌跡(ば点線
矢印で、他の任意点Bでは一点鎖線矢印で示した軌跡を
くなど、補助円盤13上では円運動を槍めた任意方向
の様々な軌跡を有する動きを示す。In addition, the motion on the auxiliary disk 13 during one revolution is as shown in FIG. 5, as shown in FIG. On the auxiliary disk 13, it shows movements having various trajectories in arbitrary directions other than circular motion, such as following a trajectory.
したがつて、第6図の如く補助円盤13土に半導体基板
4を設置し、減圧吸着孔17を減圧させて、半導体基板
4を補助円盤13上fこ吸着保持して、半導体基板4上
にホトレジスト5を滴下した後、,駆動用モータ9によ
つて補助円盤13を高速自公転させれば、ホトレジスト
5(ま第5図の軌跡の一例を示した如く、様々な軌跡で
半導体基板4上を拡散し、余剰分(ま周辺域より離脱放
出される。Therefore, the semiconductor substrate 4 is placed on the auxiliary disk 13 as shown in FIG. After dropping the photoresist 5, if the auxiliary disk 13 is rotated and revolved at high speed by the driving motor 9, the photoresist 5 (or the photoresist 5) is deposited on the semiconductor substrate 4 with various trajectories as shown in an example of the trajectories in FIG. The surplus is then released from the surrounding area.
よつて本方式の塗布法では、従来の定点からの放射状拡
散塗布法で発生する障害物に依る陰影部の発生はホトレ
ジストの全方向拡散によつて抑止され、半導体基板4全
面Fこ均質なホトレジスト薄層が形成される。以上説明
してきたように本発明の回転式塗布装置は、試料基板が
自転および公転をしているため、試料基板上の粘件流体
物の膜厚が均一なり、微細パターンのホトエツチング等
の半導体装置の製造工程が再現註良く得ることが可能と
なり、LSI等の製造の歩留の向上が計れ、非常に工業
的価値の大なるものである。Therefore, in this coating method, the generation of shadows due to obstacles that occur in the conventional radial diffusion coating method from a fixed point is suppressed by the omnidirectional diffusion of the photoresist, and the entire surface of the semiconductor substrate 4 is coated with a homogeneous photoresist. A thin layer is formed. As explained above, in the rotary coating apparatus of the present invention, since the sample substrate rotates and revolves, the film thickness of the viscous fluid on the sample substrate is uniform, and it is possible to coat semiconductor devices such as photoetching fine patterns. It becomes possible to obtain the manufacturing process with good reproducibility, and the yield of manufacturing LSI etc. can be improved, which is of great industrial value.
第1図は従来の回転式塗布装置の基本構造を示す側面略
図、第2図は第1図に示す回転式塗布装置による塗布時
の粘件流体物の運動軌跡を示す略図、第3図及び第4図
は本発明の回転式塗布装置の基本構造を示す平面略図及
び断面略図、第5図は本発明の回転式塗布装置の自公転
塗布時の軌跡を示す図、第6図は本発明の回転式塗布装
置の一実施例の断面略図である。
4・・・・・・試料基板、9・・・・・・回転1駆動用
モータ、10・・・・・・主軸、11・・・・・・主円
盤、12・・・・・・回転軸受、13・・・・・・補助
円盤、14・・・・・・軸、16・・・・・・固定周壁
。FIG. 1 is a schematic side view showing the basic structure of a conventional rotary coating device, FIG. 2 is a schematic diagram showing the locus of motion of a viscous fluid during coating by the rotary coating device shown in FIG. 1, and FIG. FIG. 4 is a schematic plan view and a schematic cross-sectional view showing the basic structure of the rotary coating device of the present invention, FIG. 5 is a diagram showing the locus of the rotary coating device of the present invention during rotation and revolution coating, and FIG. 6 is a schematic diagram of the present invention. 1 is a schematic cross-sectional view of an embodiment of a rotary coating device of FIG. 4...Sample substrate, 9...Rotation 1 drive motor, 10...Main shaft, 11...Main disk, 12...Rotation Bearing, 13...Auxiliary disk, 14...Shaft, 16...Fixed peripheral wall.
Claims (1)
に偏芯させて設置し、かつ前記補助円盤は前記主円盤上
で前記主円盤と異なる回転をさせることにより、前記基
板を自公転させ粘性流体物を前記基板上に均一に塗布さ
せることを特徴とした回転式塗布装置。1. An auxiliary disk on which a substrate to be coated is arranged is installed eccentrically to a rotating main disk, and the auxiliary disk rotates on the main disk in a different manner from the main disk, thereby causing the substrate to rotate around its axis and around its axis. A rotary coating device characterized by uniformly coating a viscous fluid onto the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50124094A JPS5941788B2 (en) | 1975-10-14 | 1975-10-14 | Rotary coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50124094A JPS5941788B2 (en) | 1975-10-14 | 1975-10-14 | Rotary coating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5247836A JPS5247836A (en) | 1977-04-16 |
| JPS5941788B2 true JPS5941788B2 (en) | 1984-10-09 |
Family
ID=14876763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50124094A Expired JPS5941788B2 (en) | 1975-10-14 | 1975-10-14 | Rotary coating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941788B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113869A (en) * | 1980-12-29 | 1982-07-15 | Fujitsu Ltd | Coating method for resin liquid and coating method used for this |
| JPS61156114U (en) * | 1985-03-19 | 1986-09-27 | ||
| JPH0666255B2 (en) * | 1989-05-02 | 1994-08-24 | 三菱電機株式会社 | Spin coating apparatus and method |
| US5264246A (en) * | 1989-05-02 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Spin coating method |
| US5032492A (en) * | 1989-08-21 | 1991-07-16 | At&T Bell Laboratories | Photolithographic masking process and apparatus |
-
1975
- 1975-10-14 JP JP50124094A patent/JPS5941788B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5247836A (en) | 1977-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5874128A (en) | Method and apparatus for uniformly spin-coating a photoresist material | |
| JPS5941788B2 (en) | Rotary coating device | |
| JP3437995B2 (en) | Double side coating device | |
| US3297475A (en) | Coating method and apparatus employing rotating workholder | |
| JPS62185322A (en) | Applicator for photo-resist | |
| JPH03271195A (en) | Device for rotating substrate | |
| JPH02219213A (en) | Resist applying apparatus | |
| JPS60130830A (en) | Film formation device | |
| JPH01111328A (en) | Method for coating thin film | |
| JPS584587B2 (en) | Rotary viscous agent application method and device | |
| JPH05136039A (en) | Resist coating apparatus and semiconductor device manufacturing method | |
| JPS60198818A (en) | Photoresist developing device | |
| JPH0632673Y2 (en) | Resist coating device | |
| JP2000150352A (en) | Method for manufacturing semiconductor device | |
| JP4317613B2 (en) | Substrate holding device | |
| JPS5855976Y2 (en) | spin coater | |
| JPWO2024262029A5 (en) | ||
| JP2840182B2 (en) | Rotary coating method for substrate and rotary coating apparatus for substrate | |
| JPS62160171A (en) | Method for coating resin | |
| JPH0688227A (en) | Film forming equipment | |
| JP2003093955A (en) | Thin film coating method and thin film coating apparatus | |
| JP2001143998A (en) | Resist coating method and apparatus | |
| JPS593430A (en) | Formation of photoresist film | |
| JPH02133917A (en) | Coating of resist and resist coating apparatus | |
| JPH02129912A (en) | Resist coater |