JPS5947254B2 - Single crystal cutting plane deviation angle measurement method - Google Patents
Single crystal cutting plane deviation angle measurement methodInfo
- Publication number
- JPS5947254B2 JPS5947254B2 JP9453976A JP9453976A JPS5947254B2 JP S5947254 B2 JPS5947254 B2 JP S5947254B2 JP 9453976 A JP9453976 A JP 9453976A JP 9453976 A JP9453976 A JP 9453976A JP S5947254 B2 JPS5947254 B2 JP S5947254B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- plane
- deviation angle
- single crystal
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 21
- 238000000691 measurement method Methods 0.000 title claims 2
- 238000005259 measurement Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
【発明の詳細な説明】
例えば通信機あるいは時間基準を得るための基準発振器
等に用いられる水晶共振子あるいは半導体電気素子を得
るための水晶その他の単結晶板は、これを所定の面指数
の結晶格子面に対して一定の方位をもつて一定の角度で
切断する必要がある。Detailed Description of the Invention For example, a crystal resonator used in a communication device or a reference oscillator for obtaining a time reference, or a crystal or other single crystal plate for obtaining a semiconductor electric device, is made of a crystal with a predetermined surface index. It is necessary to cut at a certain angle with a certain orientation to the lattice plane.
このような単結晶体の切断面と結晶格子面との間の角度
を測定するためにX線の回折現象が利用される。しカル
従来は、切断面に対する結晶格子面の傾斜方向を測定に
より決定してその方向から試料の切断面にX線を入射さ
せると同時に上記入射角を変化して回折の生ずる角度を
求めていた。従つて上記測定に誤差があると良品が不良
品にあるいは不良品が良品として処理されるおそれがあ
り、かつ測定による傾斜の方向を示すためにこれと並行
な辺を有する正方形または矩形に試料を切断して更に方
向を示すために1つまたは2つの角を斜めに切落してお
く必要があつた。このため板状の試料を更に所定の形状
に切抜いて共振子等を製作する場合における試料の利用
率が悪い等の欠点があつた。本発明は上述のような欠点
がなく、しかも測定装置の機構を簡単にすることのでき
る測定法を提供するものである。第1図は矩形板状に切
断された単結晶試料の一例で、結晶格子面1と切断面2
とは、該試料の相隣接する2辺をそれぞれ含ゝで切断面
2と直交する平面内において、偏差角εおよびηを有す
る。An X-ray diffraction phenomenon is used to measure the angle between a cut plane of a single crystal and a crystal lattice plane. Conventionally, the direction of inclination of the crystal lattice plane with respect to the cut surface was determined by measurement, and the angle at which diffraction occurred was determined by making X-rays incident on the cut surface of the sample from that direction and simultaneously changing the incident angle. . Therefore, if there is an error in the above measurements, there is a risk that a good product may be treated as a defective product or a defective product may be treated as a non-defective product, and in order to indicate the direction of inclination during measurement, the sample should be shaped into a square or rectangle with parallel sides. It was necessary to cut one or two corners diagonally to provide further direction. For this reason, there have been drawbacks such as a poor utilization rate of the sample when manufacturing a resonator or the like by cutting out a plate-like sample into a predetermined shape. The present invention provides a measuring method that does not have the above-mentioned drawbacks and can simplify the mechanism of the measuring device. Figure 1 shows an example of a single crystal sample cut into a rectangular plate, with crystal lattice plane 1 and cut plane 2.
have deviation angles ε and η in a plane that includes two adjacent sides of the sample and is orthogonal to the cut surface 2, respectively.
すなわち試料のほぼ中心を通る切断面の法線を3とする
とき、結晶格子面1はこの法線3と切断面上の直線4と
を含む平面内において傾斜しているが、本発明はその傾
斜角、従つて結晶格子面1と折断面2との間の偏差角δ
を測定するものである。例えばATカットの水晶振動子
においては仮りにηが正確に所定の角度2058’であ
つてもεが0でない限り傾斜角δはηより大となる。ε
は15’とするとδはηより3を大きくなる。第2図は
上述のような試料5について、本発明の方法による測定
系の構成を示した縦断面の略図、また第3図はその平面
図である。In other words, when the normal line to the cut plane passing through approximately the center of the sample is 3, the crystal lattice plane 1 is inclined in a plane including this normal line 3 and the straight line 4 on the cut plane. The inclination angle and therefore the deviation angle δ between the crystal lattice plane 1 and the fold plane 2
It is used to measure. For example, in an AT-cut crystal resonator, even if η is exactly the predetermined angle 2058', the inclination angle δ will be larger than η unless ε is 0. ε
is 15', δ becomes 3 larger than η. FIG. 2 is a schematic vertical cross-sectional view showing the configuration of a measurement system according to the method of the present invention for the sample 5 as described above, and FIG. 3 is a plan view thereof.
このように試料5のほぼ中央を通る法線3を含む平面内
にX線源6からスリットTを通して発散X線を投射し、
その発散X線を試料の切断面2に入射させてある。X線
源6は上記法線3に直交した短かい線分状をなすもので
あり、またスリットTも法線3に直交している。従つて
試料の切断面2に入射するX線の最大入射角がctl、
最小入射角がα2となるが、この状態において法線3を
軸とし試料5を矢印φのように回転させる。かつ上記法
線3および試料面に入射するX線を含む平面内にX線検
出器8を設けて、試料の切断面で回折したX線を検出す
るようにしてある。すなわち結晶格子面1によるX線の
回折角を2θ0とするとき、試料の切断面の中心とX線
源6並びに検出器8を結ぶ2直線のなす角が2θoとな
るように上記X線源6および検出器8を配置してある。
このような測定系において、試料の切断面2に対するX
線の入射角をα、切断面2と結晶格子面1との間の偏差
角をδ、切断面2の法線3を軸とする回転角をψとする
と、ブラックの回折条件はであるが、偏差角δが数度以
内の場合は極めてよい近似をもつて、と表わすことがで
きる。In this way, divergent X-rays are projected from the X-ray source 6 through the slit T in a plane including the normal line 3 passing through approximately the center of the sample 5,
The divergent X-rays are made incident on the cut surface 2 of the sample. The X-ray source 6 is in the form of a short line segment perpendicular to the normal line 3, and the slit T is also perpendicular to the normal line 3. Therefore, the maximum incident angle of X-rays incident on the cut surface 2 of the sample is ctl,
The minimum incident angle is α2, and in this state, the sample 5 is rotated about the normal line 3 as indicated by the arrow φ. In addition, an X-ray detector 8 is provided within a plane including the normal line 3 and the X-rays incident on the sample surface to detect X-rays diffracted by the cut surface of the sample. That is, when the diffraction angle of X-rays by the crystal lattice plane 1 is 2θ0, the X-ray source 6 is arranged so that the angle formed by two straight lines connecting the center of the cut surface of the sample, the X-ray source 6, and the detector 8 is 2θo. and a detector 8 are arranged.
In such a measurement system, X with respect to the cut surface 2 of the sample
If the incident angle of the line is α, the deviation angle between the cut plane 2 and the crystal lattice plane 1 is δ, and the rotation angle about the normal 3 of the cut plane 2 is ψ, Black's diffraction conditions are as follows. , if the deviation angle δ is within a few degrees, it can be expressed as with very good approximation.
従つて前記最小入射角α2が充分小さいものとすると、
試料5の回転中の条件が満される範囲では、切断面にα
2から(:tlの範囲の各入射角をもつて入射するX線
の一部が(2)式の回折条件を満足して検出器8で検出
される。第4図aの曲線Aは前記第(2)式の関係を示
した曲線で、切断面2と結晶格子面1との偏差角δが変
化すると曲線は、破線B,Cのようになる。すなわち上
記曲線がX線の最大および最小入射角D,とD2の間に
入る回転角範囲−φ1から+ψ1までの回転角範囲にお
いて回折X線が検出される。かつ検出されるX線の強度
は試料の回転角に殆んど関係しないから、そめ強度sと
回転角ψの関係は第4図bで表わされる。従つて偏差角
δの変化により第4図aの曲線Aが、B,Cのように変
化すると、回折X線の検出される回転角範月Wが、w’
,W’のようになる。第5図は実際に観測される第4図
bの波形を示したものであるが、上述のようにその幅W
が偏差角δによつて変化するから、この幅によつて偏差
角δを知ることができる。なお幅Wを求めるためには、
例えば試料を定速度で回転して、検出器が出力を送出し
始めてから、その出力が消滅するまでの時間を測定する
方法、あるいは上記時間中における検出器の全出力パル
ス数またはこれをコンデンサに蓄積して電荷重、従つて
第5図の曲線と横軸とで囲まれる面積を求める方法等種
々の手段がある。以上説明したように本発明は、試料の
切断面に対する結晶格子面の傾斜方向を予め知ることな
く、それらの間の偏差角を求め得るものである。Therefore, assuming that the minimum incident angle α2 is sufficiently small,
In the range where the conditions during rotation of sample 5 are satisfied, α is applied to the cut surface.
A part of the X-rays incident at each incident angle in the range from 2 to (: tl) satisfies the diffraction condition of equation (2) and is detected by the detector 8. This is a curve showing the relationship of equation (2). When the deviation angle δ between the cut plane 2 and the crystal lattice plane 1 changes, the curve becomes like the broken lines B and C. In other words, the above curve becomes the maximum and Diffracted X-rays are detected in the rotation angle range from -φ1 to +ψ1, which falls between the minimum incident angles D and D2.The intensity of the detected X-rays is almost related to the rotation angle of the sample. Therefore, the relationship between deflection intensity s and rotation angle ψ is expressed in Figure 4b. Therefore, if curve A in Figure 4a changes as shown in B and C due to a change in deviation angle δ, the diffracted X-ray The detected rotation angle range W is w'
, W'. Figure 5 shows the waveform of Figure 4b that is actually observed, but as mentioned above, its width W
changes depending on the deviation angle δ, so the deviation angle δ can be known from this width. In addition, in order to find the width W,
For example, you can rotate the sample at a constant speed and measure the time from when the detector starts sending output to when the output disappears, or you can calculate the total number of output pulses from the detector during the above period or convert it to a capacitor. There are various methods such as a method of accumulating the charges and calculating the area surrounded by the curve and the horizontal axis in FIG. 5. As explained above, the present invention allows the deviation angle between the crystal lattice plane and the cut plane of the sample to be determined without knowing in advance the inclination direction of the crystal lattice plane with respect to the cut plane of the sample.
従つて傾斜角を測定するために、まず傾斜の方向を求め
て、その試料を正確に所定の向きに設置する煩雑な操作
を必要としないと共にこの操作誤りによる誤測定を防止
し得る。かつ試料毎に傾斜方向を表示するために矩形板
の角を切落す等の必要がないから、試料の利用率が向上
する。しかも試料を1つの軸のまわりで回転するだけで
あるから簡単な機構の装置によつて測定を行い得る。Therefore, in order to measure the angle of inclination, it is not necessary to first determine the direction of inclination and then to precisely place the sample in a predetermined orientation, which is a complicated operation, and it is possible to prevent erroneous measurements due to errors in this operation. Moreover, since there is no need to cut off the corners of the rectangular plate in order to display the inclination direction for each sample, the utilization rate of the sample is improved. Moreover, since the sample is simply rotated around one axis, measurements can be performed using a device with a simple mechanism.
第1図は試料の一例を示した斜視図、第2図は本発明の
方法による測定系の縦断面略図、第3図はその平面図、
第4図は本発明の原理を説明する線図、第5図は観測さ
れる曲線の一例である。FIG. 1 is a perspective view showing an example of a sample, FIG. 2 is a schematic vertical cross-sectional view of a measurement system according to the method of the present invention, and FIG. 3 is a plan view thereof.
FIG. 4 is a diagram explaining the principle of the present invention, and FIG. 5 is an example of an observed curve.
Claims (1)
する単結晶試料を上記切断面の法線を軸として回転する
と共に上記切断面に発散X線を照射しかつ該切断面で回
折したX線の検出器を設けて、上記検出器により回折X
線が検出される試料の回転角範囲を観測することを特徴
とする単結晶の切断面偏差角測定法。1. Rotate the single crystal sample whose deviation angle between the crystal lattice plane and the cut plane is to be measured around the normal to the cut plane, irradiate the cut plane with divergent X-rays, and perform diffraction at the cut plane. A detector for diffracted X-rays is provided, and the detector detects diffracted X-rays.
A single crystal cutting plane deviation angle measurement method characterized by observing the rotation angle range of a sample in which a line is detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9453976A JPS5947254B2 (en) | 1976-08-10 | 1976-08-10 | Single crystal cutting plane deviation angle measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9453976A JPS5947254B2 (en) | 1976-08-10 | 1976-08-10 | Single crystal cutting plane deviation angle measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5320354A JPS5320354A (en) | 1978-02-24 |
| JPS5947254B2 true JPS5947254B2 (en) | 1984-11-17 |
Family
ID=14113114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9453976A Expired JPS5947254B2 (en) | 1976-08-10 | 1976-08-10 | Single crystal cutting plane deviation angle measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5947254B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2473776B1 (en) * | 1980-01-11 | 1985-07-05 | Cgr Mev | IRRADIATION APPARATUS USING RADIOACTIVE SOURCES |
| JPS59225339A (en) * | 1983-06-04 | 1984-12-18 | Horiba Ltd | Apparatus for measuring inclination angle of crystal surface |
| KR101360906B1 (en) | 2012-11-16 | 2014-02-11 | 한국표준과학연구원 | Accurate determination of surface orientation of single crystal wafers using high resolution x-ray rocking curve measurements |
-
1976
- 1976-08-10 JP JP9453976A patent/JPS5947254B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5320354A (en) | 1978-02-24 |
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