JPS5948787B2 - Vapor phase epitaxial growth equipment - Google Patents
Vapor phase epitaxial growth equipmentInfo
- Publication number
- JPS5948787B2 JPS5948787B2 JP3658982A JP3658982A JPS5948787B2 JP S5948787 B2 JPS5948787 B2 JP S5948787B2 JP 3658982 A JP3658982 A JP 3658982A JP 3658982 A JP3658982 A JP 3658982A JP S5948787 B2 JPS5948787 B2 JP S5948787B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- phase epitaxial
- vapor phase
- epitaxial growth
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は気相エピタキシャル成長装置、特に半導体レー
ザ、ＧａＡｓＩＣなどの基盤となる□−Ｖ族結晶を成長
させるための気相エピタキシャル成長装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor phase epitaxial growth apparatus, and particularly to a vapor phase epitaxial growth apparatus for growing □-V group crystals, which are the basis of semiconductor lasers, GaAs ICs, and the like.
有機金属化合物を原料とする気相エピタキシャル成長装
置は従来より広く各種研究されている。Vapor phase epitaxial growth devices using organometallic compounds as raw materials have been extensively studied.
従来の装置を、ＩｎＰを成長させる場合を例として、第
１図に基づき説明する。第１図は従来のＩｎＰを気相エ
ピタキシャル成長装置（横型炉）の断面概略図であり、
図中、１ａ、ｌｂ） ｌｃは流量コントローラ、２はバ
プラ、３は有機金属化合物（液体）、４は反応管、５は
高周波加熱用ワークコイル、６は結晶成長用基板、７は
高周波加熱用カーボンサセプタ、８は排気ポンプ（油回
転ポンプ）、９はニードルバルブである。この装置にお
いて、Ｉｎ源としてトリエチレンインジウムＩｎ（Ｃ２
Ｈ５）３、Ｐ源としてホスフィンＰＨ３を用い、ＩｎＰ
を成長させる場合、典型的には水素をキャリアガスとし
てＰＨ３を流量コントローラ１ａで適度に調整し反応管
４に導入する。A conventional apparatus will be explained based on FIG. 1, taking as an example the case of growing InP. FIG. 1 is a schematic cross-sectional view of a conventional InP vapor phase epitaxial growth apparatus (horizontal furnace).
In the figure, 1a, lb) lc is a flow rate controller, 2 is a bubbler, 3 is an organometallic compound (liquid), 4 is a reaction tube, 5 is a work coil for high frequency heating, 6 is a substrate for crystal growth, 7 is for high frequency heating A carbon susceptor, 8 an exhaust pump (oil rotary pump), and 9 a needle valve. In this device, triethylene indium In (C2
H5)3, using phosphine PH3 as the P source, InP
When growing, typically hydrogen is used as a carrier gas and PH3 is adjusted appropriately using the flow controller 1a and introduced into the reaction tube 4.
一方、Ｉｎ（Ｃ２Ｈ５）３３は室温で液体で一定の蒸気
圧を有するため、バブラ２中に主として液体状態で保持
され、流量コントローラＩｂで流量制御されたキャリア
−ガスのＨ２により、反応管４に導入される。他に、希
釈用のＨ２を流量コントローラＩｃを介し、反応管４に
送入する。反応管４において、ワークコイル５によりサ
セプタ７は加熱され、結晶成長用基板６もやはり加熱さ
れている。On the other hand, since In(C2H5)33 is a liquid at room temperature and has a constant vapor pressure, it is mainly held in a liquid state in the bubbler 2, and is supplied to the reaction tube 4 by carrier gas H2 whose flow rate is controlled by the flow rate controller Ib. be introduced. In addition, H2 for dilution is fed into the reaction tube 4 via the flow rate controller Ic. In the reaction tube 4, the susceptor 7 is heated by the work coil 5, and the crystal growth substrate 6 is also heated.
このためＰＨ３及びＩｎ（Ｃ２Ｈ５）３は反応し、Ｉｎ
Ｐが基板６上に育成される。Therefore, PH3 and In(C2H5)3 react, and In(C2H5)3 reacts.
P is grown on the substrate 6.
このような一連の工程において、ＩｎＰが基板６上に成
長するわけであるが、原料のＩｎ（Ｃ２Ｈ４）３とＰＨ
３は前記基板６上に致達する前に中間反応をおこしやす
い傾向がある。In such a series of steps, InP grows on the substrate 6, but the raw materials In(C2H4)3 and PH
3 tends to cause an intermediate reaction before reaching the substrate 6.
このため従来この種の気相エピタキシャル装置において
は、反応管４を減圧下におくことが行なわれている。す
なわち反応管４の排気側に排気ポンプ（油回転ポンプ）
８を設けると共に、ニードルバルブ９により反応管４内
の圧力を調整していた。しかしながら、このニードルバ
ルブ９による圧力調整は制御性が悪く、第２図に示すよ
うに、圧力の時間変動をおこすと言う欠点がある。For this reason, conventionally in this type of gas phase epitaxial apparatus, the reaction tube 4 has been placed under reduced pressure. In other words, an exhaust pump (oil rotary pump) is installed on the exhaust side of the reaction tube 4.
8 was provided, and the pressure inside the reaction tube 4 was adjusted by a needle valve 9. However, the pressure adjustment using the needle valve 9 has poor controllability, and has the disadvantage that the pressure changes over time, as shown in FIG.
さらに圧力の経時変化も大きく、結晶成長中は圧力計を
見ながら手動でニードルバルブ９の開閉をしなければな
らなかつた。これはハライド系原料を用いる場合も、減
圧法で行なうかぎり同様な欠点があつた。本発明はこの
ような欠点のない気相エピタキシャル成長装置、詳しく
は、反応管内の圧力が一定に保持され、安定した均一性
の高い結晶を製造しえる気相エピタキシヤル装置に関す
るものである。Furthermore, the pressure changes greatly over time, and the needle valve 9 had to be opened and closed manually while watching the pressure gauge during crystal growth. Similar drawbacks occurred when using halide raw materials as long as the method was carried out under reduced pressure. The present invention relates to a vapor phase epitaxial growth apparatus that does not have such drawbacks, and more particularly, to a vapor phase epitaxial growth apparatus that can maintain a constant pressure in a reaction tube and produce stable and highly uniform crystals.
したがつて、本発明による気相エピタキシヤル装置は、
反応管の排気側に排気ポンプを有する気相エピタキシヤ
ル装置において、前記反応管と排気ポンプ間に、螺旋状
のパイプを介在させたことを特徴とするものである。本
発明の実旋例を図面に基づき説明する。Therefore, the vapor phase epitaxial apparatus according to the present invention comprises:
A gas phase epitaxial apparatus having an exhaust pump on the exhaust side of a reaction tube is characterized in that a spiral pipe is interposed between the reaction tube and the exhaust pump. A practical example of the present invention will be explained based on the drawings.
第３図は本発明による一実施例の概略図であり、図中、
１〜９は第１図と同様のものを示し、１０は螺旋パイプ
を示す。FIG. 3 is a schematic diagram of an embodiment according to the present invention, and in the figure,
1 to 9 are similar to those shown in FIG. 1, and 10 is a spiral pipe.
この第３図より明かなように、原料供給系Ｓより供給さ
れた原料ガス等は反応管４に導入される。As is clear from FIG. 3, raw material gas and the like supplied from the raw material supply system S are introduced into the reaction tube 4.
反応管４内にはサセプタ７により保持されている基板６
が設けられ、また、ワークコイル６により加熱されてい
るため、導入された原料ガスは反応し、基板６上に結晶
を成長させる。一方減圧を行なう真空ポンプ（排気ポン
プ）８はこの反応管４の排気側に設けられ、ニードルバ
ルブ９及び螺旋パイプ１０を介して反応管４と接続して
いる。Inside the reaction tube 4 is a substrate 6 held by a susceptor 7.
is provided and heated by the work coil 6, the introduced raw material gas reacts and grows crystals on the substrate 6. On the other hand, a vacuum pump (exhaust pump) 8 for reducing pressure is provided on the exhaust side of the reaction tube 4 and is connected to the reaction tube 4 via a needle valve 9 and a spiral pipe 10.
この第３図より明かなように、本発明においては、排気
ポンプ８と反応管４との間に螺旋パイプ１０を介在せし
めていることを特徴としている。As is clear from FIG. 3, the present invention is characterized in that a spiral pipe 10 is interposed between the exhaust pump 8 and the reaction tube 4.
螺旋状コイル１０の形状と、圧力変動の低減の関係を図
示すると第４図のようになる。動作圧力に対する圧力の
微少変動を（Ｓ／Ｎ）を用いて表わす〔Ｓ：Ｓｉｇｒｌ
ａｌ（動作圧力）、Ｎ：ＮＯｉｓｅ（微少変動）〕と、
Ｓ／Ｎはコイルの形状因子（ｎｌへ）にほぼ比例する。
ここにｎはコイルのターン数、ｌはコイルの全長、Ｓは
コイルの断面積である。圧力変動は１％以下が望ましい
ので、この形状因子は１×１０３（ターン／ｃ！ＲＬ）
以上が好ましい。また、ｌ／Ｓが大きくなると抵抗が上
がるので、実用的な最適範囲は１×１０３≦ｎｌ／Ｓ≦
１×１０５（ターン／ＣｒｌＬ）である。このような装
置を用いて結晶を成長させた。The relationship between the shape of the helical coil 10 and the reduction in pressure fluctuation is illustrated in FIG. 4. The minute fluctuation in pressure with respect to the operating pressure is expressed using (S/N) [S: Sigrl
al (operating pressure), N: NOise (minor fluctuation)],
The S/N is approximately proportional to the coil form factor (to nl).
Here, n is the number of turns of the coil, l is the total length of the coil, and S is the cross-sectional area of the coil. Since the pressure fluctuation is preferably 1% or less, this form factor is 1 x 103 (turns/c!RL)
The above is preferable. Also, as l/S increases, resistance increases, so the practical optimum range is 1×103≦nl/S≦
It is 1×105 (turn/CrlL). Crystals were grown using such an apparatus.
このとき螺旋パイプ１０は、パイプ径１／４インチのス
テンレス製全長４ｍで、螺旋の内径は７０ｍ１１Ｌであ
つた。真空ポンプ８の排気量６００１／Ｍｉ！ｔを使用
した。反応管４内を流すガス量を常圧換算で、１〜５１
／Ｍｉ！ｔ流した。反応管４と排気ポンプ８の間をこの
螺旋パイプで結んだとき、反応管内の圧力の時間変化は
第５図に示すように全く観測されなかつた。このときの
ｎｌ／Ｓは４Ｘ１０４（ターン／Ｃｆｎ）であつた。螺
旋状コイル１０は、電流に対するコンダクタンス（コイ
ル）と同じような働きを示し、流速の微小変動を消去し
てしまう。At this time, the spiral pipe 10 was made of stainless steel with a pipe diameter of 1/4 inch, had a total length of 4 m, and had an inner diameter of 70 m11L. Displacement volume of vacuum pump 8 6001/Mi! t was used. The amount of gas flowing through the reaction tube 4 is 1 to 51 in terms of normal pressure.
/Mi! t flowed. When the reaction tube 4 and the exhaust pump 8 were connected with this spiral pipe, no change in pressure within the reaction tube over time was observed at all, as shown in FIG. At this time, nl/S was 4×104 (turn/Cfn). The helical coil 10 exhibits a function similar to a conductance (coil) for electric current, and eliminates minute fluctuations in flow velocity.
したがつて、本発明による装置を用いることにより、き
わめて再現性よく、結晶が得られた。ここでは主として
有機金属化合物を用いたＩ−族結晶の成長において説明
したが、ＧａＣｌｓＩｎＣｌｓＡｓ４、Ｐ４等を用いた
ハライド系の気相エピタキシヤル成長でも、減圧法で成
長させる場合全く同じ効果が得られる。以上説明したよ
うに、反応管と排気ポンプの間に、螺旋状のパイプを入
れて両者を結ぶことにより、これまで、ポンプの排気の
不均一とか、ガス供給量の不安定により生じていた、反
応管内の微小な圧力変動がなくなる。したがつて、結晶
成長の際の再現状が良くなると言う利点がある。Therefore, by using the apparatus according to the present invention, crystals were obtained with extremely good reproducibility. Although the explanation has mainly been given regarding the growth of Group I crystals using organometallic compounds, the same effect can be obtained by vapor phase epitaxial growth of halide-based crystals using GaClsInClsAs4, P4, etc. when grown by a reduced pressure method. As explained above, by inserting a spiral pipe between the reaction tube and the exhaust pump to connect them, problems that were previously caused by uneven pump exhaust or unstable gas supply amount can be avoided. This eliminates minute pressure fluctuations within the reaction tube. Therefore, there is an advantage that the reconditioning during crystal growth is improved.
第１図は従来の気相エピタキシヤル装置の概略図、第２
図は従来の装置における反応管内の圧力の経時変化を示
すグラフ、第３図は本発明の一実施例の概略図、第４図
はコイルの形状と動作圧力の微小変動との関係を示すグ
ラフ、第５図は本発明による気相エピタキシヤル成長装
置における反応管内の圧力の経時変化を示すグラフであ
る。
１・・・・・・バルブ、２・・・・・・バルブ、３・・
・・・・原料、４・・・・・・反応管、５・・・・・・
ワークコイル、６・・・・・・基板、７・・・・・・サ
セプタ、８・・・・・・排気ポンプ、１０・・・・・・
螺旋パイプ。Figure 1 is a schematic diagram of a conventional vapor phase epitaxial device;
The figure is a graph showing the change over time in the pressure inside the reaction tube in a conventional device, Figure 3 is a schematic diagram of an embodiment of the present invention, and Figure 4 is a graph showing the relationship between the shape of the coil and minute fluctuations in operating pressure. , FIG. 5 is a graph showing the change over time in the pressure inside the reaction tube in the vapor phase epitaxial growth apparatus according to the present invention. 1...Valve, 2...Valve, 3...
...Raw material, 4...Reaction tube, 5...
Work coil, 6... Board, 7... Susceptor, 8... Exhaust pump, 10...
spiral pipe.
Claims (1)
シャル成長装置において、前記反応管と真空ポンプ間に
螺旋状のパイプを介在させたことを特徴とする気相エピ
タキシャル成長装置。1. A vapor phase epitaxial growth apparatus having a vacuum pump on the exhaust side of a reaction tube, characterized in that a spiral pipe is interposed between the reaction tube and the vacuum pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3658982A JPS5948787B2 (en) | 1982-03-10 | 1982-03-10 | Vapor phase epitaxial growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3658982A JPS5948787B2 (en) | 1982-03-10 | 1982-03-10 | Vapor phase epitaxial growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58156593A JPS58156593A (en) | 1983-09-17 |
| JPS5948787B2 true JPS5948787B2 (en) | 1984-11-28 |
Family
ID=12473958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3658982A Expired JPS5948787B2 (en) | 1982-03-10 | 1982-03-10 | Vapor phase epitaxial growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5948787B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106024U (en) * | 1984-12-19 | 1986-07-05 | ||
| US5993555A (en) | 1997-01-16 | 1999-11-30 | Seh America, Inc. | Apparatus and process for growing silicon epitaxial layer |
-
1982
- 1982-03-10 JP JP3658982A patent/JPS5948787B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58156593A (en) | 1983-09-17 |
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