JPS5948795B2 - Maskless ion implanter - Google Patents
Maskless ion implanterInfo
- Publication number
- JPS5948795B2 JPS5948795B2 JP10539882A JP10539882A JPS5948795B2 JP S5948795 B2 JPS5948795 B2 JP S5948795B2 JP 10539882 A JP10539882 A JP 10539882A JP 10539882 A JP10539882 A JP 10539882A JP S5948795 B2 JPS5948795 B2 JP S5948795B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ions
- conductivity type
- substrate
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000010884 ion-beam technique Methods 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 6
- 239000006023 eutectic alloy Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H01J37/3172—Maskless patterned ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】
この発明は加速エネルギーで半導体結晶基板へ直接イオ
ンを注入するマスクレスイオン注入装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a maskless ion implantation apparatus that directly implants ions into a semiconductor crystal substrate using accelerated energy.
ガリウム砒素等の半導体基板結晶にレーザ、発光ダイオ
ード、光検知器等の光デバイス、バイポーラトランジス
タ、電界効果型トランジスタを形成する場合、ｐ型、ｎ
型又は双方の不純物イオンの注入が必要であり、当然の
ことながらイオン注入工程ではイオン源の取り替え、マ
スクの位置合せ等煩雑な作業の繰返しが行われる。When forming optical devices such as lasers, light emitting diodes, photodetectors, bipolar transistors, and field effect transistors on semiconductor substrate crystals such as gallium arsenide, p-type, n-type
It is necessary to implant impurity ions into the mold or both, and as a matter of course, the ion implantation process requires repeated complicated operations such as replacing the ion source and aligning the mask.
一方、最近提案されているサブミクロンのオーダで収束
されたイオンビームを用いるマスクレスイオン注入方法
ではハードウェア上の変更を無くし、すべてソフトウェ
アでプロセスを制御することが可能と考えられる。しか
しいずれのイオン注入方法に於ても工程の途中でイオン
源を交換するような場合はイオン発生部とイオン加速収
束系、イオン偏向電極系の間に厳しい精度で軸合せを行
う必要がある。On the other hand, in the recently proposed maskless ion implantation method using an ion beam focused on the order of submicrons, it is considered possible to eliminate hardware changes and control the process entirely by software. However, in any of the ion implantation methods, if the ion source is replaced during the process, it is necessary to align the axes between the ion generation section, the ion acceleration and focusing system, and the ion deflection electrode system with strict accuracy.
更に、サブミクロン以上の精度にて既にイオン注入した
パターンの上に重ねて第２のイオン注入を行う場合、イ
オン源の交換でイオン発生部の位置が少しでも動くと、
位置の調整に大変手間を取ることになる。従つて、単一
のイオン発生部よりｐ型及びｎ型の不純物イオンが発生
できれば殆どの集積回路デバイス作成工程中でハードウ
ェアの変更、調整を行うことなく、ソフトウェアの制御
のみで同一基板に高集積化された信頼度の高い電子デバ
イスの製造が容易に可能となる。Furthermore, when performing a second ion implantation over a pattern that has already been implanted with an accuracy of submicron or higher, if the position of the ion generator moves even slightly due to replacing the ion source,
Adjusting the position will take a lot of time. Therefore, if p-type and n-type impurity ions can be generated from a single ion generator, high-density ions can be produced on the same substrate using only software control, without having to change or adjust the hardware during most integrated circuit device fabrication processes. It becomes possible to easily manufacture integrated and highly reliable electronic devices.
この発明の目的は単一のイオン発生部よりｐ型及びｎ型
の不純物イオンを発生させて、各種の集積回路デバイス
を半導体基板の所定の位置にミクロンのオーダで制御し
て形成させることのできるマスクレスイオン注入装置を
提供するものであつて、以下本発明を図示の実施例を参
照して説明する。An object of the present invention is to generate p-type and n-type impurity ions from a single ion generating section, and to form various integrated circuit devices at predetermined positions on a semiconductor substrate in a controlled manner on the order of microns. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a maskless ion implanter, and will be described below with reference to illustrated embodiments.
第１図は本発明によるマスクレスイオン注入装置の概略
構成を示し、１は電界放出型イオン発生部であつて、エ
ミッタチップ２の先端には直径１μｍ以下の放射面を備
えている。FIG. 1 shows a schematic configuration of a maskless ion implantation apparatus according to the present invention. Reference numeral 1 denotes a field emission type ion generating section, and the tip of an emitter tip 2 is provided with a radiation surface having a diameter of 1 μm or less.
イオン発生部１にはｎ型、ｐ型の不純物イオンを作るた
めの共晶合金をイオン源として装填する。本発明に於て
この共晶合金としては基板結晶にｐ型領域を形成する不
純物とｎ型領域を形成する不純物に母体金属として金（
Ａｕ）、白金（Ｐｔ）等を加えた三元合金を用いる。上
述の共晶合金を構成する不純物と母体金属の種類、混合
比率等は注入する半導体基板結晶の種類、基板に形成す
るデバイス、イオン発生部の構造等により決定され、基
板結晶がガリウム砒素の如き一族化合物半導体の場合は
Ａｕ−Ｂｅ−Ｓｉ合金を用いることができ、その混合比
率を９１：３：６とすると融点４００℃〜６００℃の共
晶合金が形成する。The ion generating section 1 is loaded with a eutectic alloy as an ion source for producing n-type and p-type impurity ions. In the present invention, this eutectic alloy contains impurities that form a p-type region in the substrate crystal, impurities that form an n-type region, and gold (as a base metal).
A ternary alloy containing Au), platinum (Pt), etc. is used. The type and mixing ratio of the impurity and base metal that constitute the above-mentioned eutectic alloy are determined by the type of semiconductor substrate crystal to be implanted, the device formed on the substrate, the structure of the ion generating part, etc. In the case of a family compound semiconductor, an Au-Be-Si alloy can be used, and when the mixing ratio is 91:3:6, a eutectic alloy with a melting point of 400°C to 600°C is formed.
また基板結晶がシリコン（Ｓｉ）、ゲルマニウム（Ｇｅ
）の如く族単体半導体の場合は母体金属として白金、ｐ
型不純物としてポロン、ｎ型不純物として砒素を用いた
Ｐｔ−Ｂ−Ａｓ共晶合金が用い得る。上述の如き、三元
の共晶合金をイオン源としてイオン発生部１に装填し、
制御回路３よりの指令信号により所定の電圧を印加する
と、合金は溶融し、液体金属イオンとなり、イオン発生
部１の放射面より複数元素の混合したイオンビーム１０
が発射され、前絞収束系４を通つて質量分離器５へ導か
れる。Also, the substrate crystal is silicon (Si), germanium (Ge)
), platinum, p as the base metal, etc.
A Pt-B-As eutectic alloy using poron as a type impurity and arsenic as an n-type impurity can be used. A ternary eutectic alloy as described above is loaded into the ion generating section 1 as an ion source,
When a predetermined voltage is applied according to a command signal from the control circuit 3, the alloy melts and becomes liquid metal ions, and an ion beam 10 containing a mixture of multiple elements is emitted from the radiation surface of the ion generating section 1.
is emitted and guided to the mass separator 5 through the pre-diaphragm focusing system 4.
質量分離器５は電磁界を用いた公知のものが用い得、制
御回路３よりの信号で複数元素の混合イオンより必要な
イオン、即ち、ｎ型イオンまたはｐ型イオンのみを選択
的に分離、放射する。このようにして分離、放射された
一方の導電型のイオンビーム１１はイオン収束系６で所
定の値に収束され、制御回路３より所定の信号を偏向電
極７へ加えると、通過するイオンビームはそれに従つて
半導体基板８の所定の位置にイオンを注入し、パターン
の描画を行う。本発明に於ては上述の如く、イオン発生
部として電界放出型構造のものを用い、イオン放射面の
径が１μｍ以下であるためサブミクロンの微細収束イオ
ンビームが半導体基板上に形成し、マスクを用いないで
直接自由なイオン注入描画を行う、いわゆるマスクレス
イオン注入が可能となる。The mass separator 5 can be a known one that uses an electromagnetic field, and selectively separates only necessary ions, that is, n-type ions or p-type ions, from mixed ions of multiple elements using a signal from the control circuit 3. radiate. The ion beam 11 of one conductivity type separated and emitted in this way is focused to a predetermined value by the ion focusing system 6, and when a predetermined signal is applied from the control circuit 3 to the deflection electrode 7, the ion beam passing through is Accordingly, ions are implanted into predetermined positions on the semiconductor substrate 8, and a pattern is drawn. As mentioned above, in the present invention, a field emission type structure is used as the ion generating section, and since the diameter of the ion emitting surface is 1 μm or less, a submicron finely focused ion beam is formed on the semiconductor substrate, and the mask This enables so-called maskless ion implantation, in which ion implantation and drawing can be performed directly and freely without using a mask.
上述の如く、第１導電型のイオンにて半導体基板に所定
のパターンの注入描画が完了したら、次に第２導電型の
イオンを注入して所定のパターンを描画するのであるが
、第１導電型イオンのパターンは直径が１μｍ或はそれ
以下のイオンビームで描かれているため、第１導電型イ
オンによるパターンと第２導電型イオンによつて描画さ
れるパターンの相対的な位置をサブミクロン以下の精度
で制御する必要がある。従つて第１導電型イオンの半導
体基板上のパターンの形成位置を認識、記録し、その情
報に基いて次の第２導電型イオンによるパターンを描け
ば上述の二つのパターンの位置合せはサブミクロン以下
の精度で行えることになる。このため、本発明に於ては
第１導電型イオンで所定のパターンを半導体基板に描画
した後、制御回路３より質量分離器５へ信号を送り、第
２導電型イオンのみを選択的に分離するように切換える
。As mentioned above, once the implantation and drawing of a predetermined pattern on the semiconductor substrate with ions of the first conductivity type is completed, ions of the second conductivity type are then implanted to draw the predetermined pattern. Since the type ion pattern is drawn with an ion beam with a diameter of 1 μm or less, the relative positions of the pattern drawn by the first conductivity type ions and the pattern drawn by the second conductivity type ions can be determined on a submicron basis. It is necessary to control with the following accuracy. Therefore, if the formation position of the pattern of the first conductivity type ions on the semiconductor substrate is recognized and recorded, and the next pattern of the second conductivity type ions is drawn based on that information, the alignment of the two patterns described above can be achieved with submicron precision. This can be done with the following accuracy. Therefore, in the present invention, after drawing a predetermined pattern on the semiconductor substrate using ions of the first conductivity type, a signal is sent from the control circuit 3 to the mass separator 5 to selectively separate only the ions of the second conductivity type. Switch to
しかる後、制御回路３よりの指令信号によりイオン発生
部１へ通常のイオンを注入する場合より可成り低いエネ
ルギーを放出し、スパツタリング効果を上げるような電
圧を印加する。その結果加速エネルギーが制御された複
数元素の混合イオンビームがイオン発生部１より発射さ
れ、質量分離器５で第２導電型イオンのみに分離、放射
され、この第２導電型のイオンビームはイオン収束系６
、偏向電極７を経て半導体基板８を照射するが、エネル
ギーが制御されているためイオンは半導体内部へは注入
されない。この時制御回路３より偏向電極７へは通過す
るイオンビームが半導体基板面を順次走査するような信
号を送る。従つて、第２図に示す如く、第２導電型のイ
オンビームは半導体表面を端より順次走査をはじめ、半
導体表面の第１導電型イオンによりパターンが形成され
ている領域１３では第１、第２導電型イオンが放出され
ることになり、第１導電型イオンが注入されていない領
域では第２導電型イオンと半導体結晶基板８を構成して
いる元素イオンが放出されることになり、従つて、放出
されるイオンをイオン検出器９にて検出し、イオンの種
類を判別することにより、その位置が第１イオンを注入
されたか否かを容易に判別でき、その時の半導体基板の
位置とを制御回路の記憶部で記憶することにより、半導
体基板表面に第１次導電型イオンが注入された部分のパ
ターン１３が正確に認識、記憶される。次に、制御回路
の指令でイオン発生部１にイオン注入を行うような加速
エネルギーを発生する電圧を印加し、第２導電型イオン
を第１導電型イオンの注入パターンを基に半導体基板へ
打ち込み、所定のパターンを描画する。上記の説明で明
らかなように、本発明によるイオン注入装置では一つの
イオン発生部によつてイオン源を交換することなく、ｎ
型、ｐ型任意の不純物イオンを収束された状態で半導体
基板に注入することができ、更に先に注入したイオンに
よるパターンを正確に認識してから、その認識したパタ
ーンを基に次のイオンの注入を行うのであるから、第２
のイオンビームによるパターン描画が極めて迅速且つ高
精度に行え、高集積化された信頼度の高い集積回路デバ
イスが容易に製造される。Thereafter, in response to a command signal from the control circuit 3, a voltage is applied that emits considerably lower energy than when normally implanting ions into the ion generating section 1 and enhances the sputtering effect. As a result, a mixed ion beam of multiple elements with controlled acceleration energy is emitted from the ion generator 1, and the mass separator 5 separates and emits only ions of the second conductivity type. convergence system 6
, the semiconductor substrate 8 is irradiated via the deflection electrode 7, but since the energy is controlled, ions are not injected into the semiconductor. At this time, the control circuit 3 sends a signal to the deflection electrode 7 so that the passing ion beam sequentially scans the surface of the semiconductor substrate. Therefore, as shown in FIG. 2, the ion beam of the second conductivity type starts scanning the semiconductor surface sequentially from the edge, and in the region 13 where the pattern is formed by the first conductivity type ions on the semiconductor surface, the ion beam of the second conductivity type starts scanning the semiconductor surface sequentially. Ions of the second conductivity type will be emitted, and in regions where the ions of the first conductivity type have not been implanted, ions of the second conductivity type and elemental ions constituting the semiconductor crystal substrate 8 will be emitted. By detecting the emitted ions with the ion detector 9 and determining the type of ions, it is possible to easily determine whether or not the first ion has been implanted, and the position of the semiconductor substrate at that time can be easily determined. By storing this in the storage section of the control circuit, the pattern 13 of the portion where the first conductivity type ions are implanted into the surface of the semiconductor substrate can be accurately recognized and stored. Next, a voltage that generates acceleration energy for ion implantation is applied to the ion generating section 1 according to a command from the control circuit, and ions of the second conductivity type are implanted into the semiconductor substrate based on the implantation pattern of the ions of the first conductivity type. , draw a predetermined pattern. As is clear from the above description, in the ion implantation apparatus according to the present invention, n.
It is possible to implant arbitrary impurity ions into a semiconductor substrate in a focused state, and after accurately recognizing the pattern of the previously implanted ions, the next ion can be implanted based on the recognized pattern. Since the injection is performed, the second
Pattern writing using an ion beam can be performed extremely quickly and with high precision, and highly integrated and highly reliable integrated circuit devices can be easily manufactured.
第１図は本発明のイオン注入装置の一実施例を示す概略
構成図、第２図は半導体基板のイオン注入領域の検出状
態を示す説明図である。
図中、１はイオン発生部、３は制御回路、５は質量分離
器、８は半導体基板、９はイオン検出器を示す。FIG. 1 is a schematic configuration diagram showing an embodiment of an ion implantation apparatus of the present invention, and FIG. 2 is an explanatory diagram showing a detection state of an ion implantation region of a semiconductor substrate. In the figure, 1 is an ion generator, 3 is a control circuit, 5 is a mass separator, 8 is a semiconductor substrate, and 9 is an ion detector.
Claims (1)
オンビームを発射するイオン発生部と、イオン発生部よ
り発射した混合イオンビームより任意の一方のイオンビ
ームに選択的に分離する質量分離器と、該質量分離器で
選択された一方のイオンビームの半導体基板への照射位
置を制御する偏向電極と、該半導体基板にイオンビーム
を照射して基板より放出されるイオンを検出するイオン
検出器と、該イオンビーム発生部、質量分離器、偏向電
極及びイオン検出器を駆動、制御する制御手段とから成
り、第１導電型イオンを半導体基板へ注入した後に第２
導電型イオンビームで基板を走査して第１導電型イオン
の注入パターンを認識しその認識パターンに基いて第２
導電型イオンを基板の所定の位置に注入することを特徴
とするマスクレスイオン注入装置。1. An ion generator that emits a focused mixed ion beam of first conductivity type ions and second conductivity type ions, and a mass separator that selectively separates the mixed ion beam emitted from the ion generator into any one of the ion beams. a deflection electrode that controls the irradiation position of one of the ion beams selected by the mass separator onto the semiconductor substrate; and an ion detector that irradiates the semiconductor substrate with the ion beam and detects ions emitted from the substrate. and a control means for driving and controlling the ion beam generator, the mass separator, the deflection electrode, and the ion detector.
The conductivity type ion beam scans the substrate to recognize the implantation pattern of the first conductivity type ions, and the second conductivity type ion is implanted based on the recognized pattern.
A maskless ion implantation apparatus characterized by implanting conductivity type ions into a predetermined position of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10539882A JPS5948795B2 (en) | 1982-06-21 | 1982-06-21 | Maskless ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10539882A JPS5948795B2 (en) | 1982-06-21 | 1982-06-21 | Maskless ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58223699A JPS58223699A (en) | 1983-12-26 |
| JPS5948795B2 true JPS5948795B2 (en) | 1984-11-28 |
Family
ID=14406522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10539882A Expired JPS5948795B2 (en) | 1982-06-21 | 1982-06-21 | Maskless ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5948795B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6148098U (en) * | 1984-09-04 | 1986-03-31 | 株式会社 サ−テイシツクス | water purifier |
| JPS61155096U (en) * | 1985-03-19 | 1986-09-26 | ||
| JPS61163099U (en) * | 1985-03-30 | 1986-10-09 | ||
| JPS61195391U (en) * | 1985-05-28 | 1986-12-05 | ||
| JPS62130795U (en) * | 1986-02-05 | 1987-08-18 | ||
| JPS63122699U (en) * | 1987-01-30 | 1988-08-09 | ||
| JPS63130110U (en) * | 1987-02-17 | 1988-08-25 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60141699A (en) * | 1983-12-27 | 1985-07-26 | Ulvac Corp | Ion source device for doping |
| JP2671983B2 (en) * | 1987-07-27 | 1997-11-05 | 電気化学工業株式会社 | Field emission type ion source |
| CN109920713B (en) * | 2019-03-08 | 2020-08-25 | 中国科学院半导体研究所 | Maskless doping-on-demand ion implantation equipment and method |
-
1982
- 1982-06-21 JP JP10539882A patent/JPS5948795B2/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6148098U (en) * | 1984-09-04 | 1986-03-31 | 株式会社 サ−テイシツクス | water purifier |
| JPS61155096U (en) * | 1985-03-19 | 1986-09-26 | ||
| JPS61163099U (en) * | 1985-03-30 | 1986-10-09 | ||
| JPS61195391U (en) * | 1985-05-28 | 1986-12-05 | ||
| JPS62130795U (en) * | 1986-02-05 | 1987-08-18 | ||
| JPS63122699U (en) * | 1987-01-30 | 1988-08-09 | ||
| JPS63130110U (en) * | 1987-02-17 | 1988-08-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58223699A (en) | 1983-12-26 |
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