JPS5948797B2 - Pretreatment method for semiconductor crystals - Google Patents
Pretreatment method for semiconductor crystalsInfo
- Publication number
- JPS5948797B2 JPS5948797B2 JP21086181A JP21086181A JPS5948797B2 JP S5948797 B2 JPS5948797 B2 JP S5948797B2 JP 21086181 A JP21086181 A JP 21086181A JP 21086181 A JP21086181 A JP 21086181A JP S5948797 B2 JPS5948797 B2 JP S5948797B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etching
- gasb
- methanol
- pretreatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
本発明は、ＧａＳｂ基板を用いる半導体結晶の前処理法
にかかわり、特にＧａＳｂ基板を鏡面エッチングする前
処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pretreatment method for a semiconductor crystal using a GaSb substrate, and particularly to a pretreatment method for mirror etching a GaSb substrate.
ＧａＳｂ結晶は、水分による表面の酸化が著しいため、
研磨後の表面はかなり酸化されている。Since the surface of GaSb crystal is significantly oxidized by moisture,
The surface after polishing is heavily oxidized.
このままの状態でＢｒ２メタノールによりエッチングを
行なうと、研磨キズピット、エッチングムラが生じて鏡
面状態にならない。従来のＧａＳｂ基板のエッチングに
は、（■）１０ＣＨ３ＣＯ０Ｈ＋５ＨＮＯ３＋ｌＨＦ系
エッチャント（１１）Ｂｒ２メタノール系エッチャント
が主に用いられていた。If etching is performed with Br2 methanol in this state, polishing scratch pits and etching unevenness will occur, and a mirror finish will not be obtained. In conventional etching of GaSb substrates, (■) 10CH3CO0H+5HNO3+1HF-based etchant and (11) Br2-methanol-based etchant have been mainly used.
前者の場合には、エッチング終了後の水洗いの工程で、
基板表面が酸化されやすいという欠点があり、後者は、
メタノールによる洗浄を行なうため酸化を防止すること
が可能であるが、エッチングの前処理工程で酸化膜を除
去しなければ、ピットやエッチングムラを生ずるという
欠点があつた。本発明は、上述の点に鑑みなされたもの
でＢｒ２メタノール系エッチャントを用いてＧａＳｂ基
板のエッチングを行なう場合、前処理工程として濃硫酸
による脱脂処理、希硝酸による表面酸化膜の除去を行な
つて、表面にピットやエッチングムラが生じないように
する方法を提供することにある。In the former case, during the washing process after etching,
The disadvantage is that the substrate surface is easily oxidized, and the latter
Cleaning with methanol makes it possible to prevent oxidation; however, if the oxide film is not removed in the pre-etching process, pits and uneven etching may occur. The present invention was developed in view of the above points, and when etching a GaSb substrate using a Br2 methanol etchant, degreasing with concentrated sulfuric acid and removal of a surface oxide film with dilute nitric acid are performed as pretreatment steps. The object of the present invention is to provide a method for preventing pits and etching unevenness from occurring on the surface.
即ち、本発明はＧａＳｂの酸化膜が硝酸に溶解すること
、又、付着有機物は濃硫酸で分解されることを利用し、
Ｂに２メタノールエッチングに先たち濃硫酸による有機
物を除去した上で希硝酸で酸化膜を除去することにより
、鏡面エッチングすることを可能にしたものである。以
下本発明を実施例で説明する。That is, the present invention takes advantage of the fact that the GaSb oxide film dissolves in nitric acid and that attached organic matter is decomposed with concentrated sulfuric acid.
In B, prior to methanol etching, organic substances are removed using concentrated sulfuric acid, and then the oxide film is removed using dilute nitric acid, thereby making it possible to perform mirror etching. The present invention will be explained below with reference to Examples.
鏡面研磨されたアンドープ（００１）ＧａＳｂ基板をエ
ッチングした場合について説明する。A case will be described in which a mirror-polished undoped (001) GaSb substrate is etched.
ＧａＳｂ基板をトリクレンで超音波脱脂洗浄した後に、
濃硫酸に２分間浸しこのあと十分に水洗いして希硝酸（
ＨＮＯ３：Ｈ２０＝１：２ ）中で約１分間浸して、酸
化膜の除去を行なつた。次に水洗いは再び表面が酸化さ
れないように３〜５秒ですませた。このあと、２％Ｂｒ
２メタノールでｌ分間エッチングを行なつた結果、ピッ
トやムラのない鏡面エッチングが行なわれた。なお濃硫
酸処理は、付着している有機物による汚染を除去する効
果がある。このような前処理をした場合としない場合の
表面状態の相違を図に示す。After ultrasonic degreasing and cleaning of the GaSb substrate with Triclean,
Soak in concentrated sulfuric acid for 2 minutes, then rinse thoroughly with water and soak in dilute nitric acid (
The oxide film was removed by immersing it in HNO3:H20=1:2 for about 1 minute. Next, washing with water was carried out for 3 to 5 seconds to prevent the surface from being oxidized again. After this, 2%Br
As a result of etching with 2 methanol for 1 minute, mirror etching without pits or unevenness was achieved. Note that concentrated sulfuric acid treatment has the effect of removing contamination caused by adhering organic matter. The figure shows the difference in surface condition with and without such pretreatment.
図のＡ部は従来の前処理なしによるＢｒ２メタノール系
エッチャントにご−よりエツチングを行つた場合であり
、図のＢ部は本発明の方法を用いて前処理エツチングを
行つた場合である。Part A of the figure shows the case where etching was performed using a Br2 methanol-based etchant without conventional pretreatment, and part B of the figure shows the case where pretreatment etching was performed using the method of the present invention.
本発明方法によれば、なめらかな鏡面が得られ従来方法
では複雑なしま状の模様が生ずる。According to the method of the present invention, a smooth mirror surface is obtained, whereas the conventional method produces a complicated striped pattern.
本発明の半導体結晶の前処理方法によれば、清浄な鏡面
を再現性よく得ることができるので、この上に良好なエ
ピタキシヤル結晶を成長させることができるという利点
がある。According to the semiconductor crystal pretreatment method of the present invention, a clean mirror surface can be obtained with good reproducibility, so there is an advantage that a good epitaxial crystal can be grown thereon.
図は、従来の方法と本発明の方法とでそれぞれＧａＳｂ
基板をエツチング前処理した表面状態を示す図面に代る
顕微鏡写真である。The figure shows the conventional method and the method of the present invention, respectively.
3 is a micrograph, in place of a drawing, showing the surface state of a substrate subjected to etching pretreatment.
Claims (1)
いて、濃硫酸を用いてＧａＳｂ基板表面に付着している
有機物を除去し、該基板表面を水洗いした後、希硝酸を
用いて前記基板表面の酸化膜を除去し、次いで前記基板
表面をＢｒ＿２−メタノールエッチング液でエッチング
処理することを特徴とする半導体結晶の前処理方法。1. In the growth of semiconductor crystals using GaSb as a substrate, organic matter adhering to the surface of the GaSb substrate is removed using concentrated sulfuric acid, and after washing the substrate surface with water, the oxide film on the surface of the substrate is removed using dilute nitric acid. 1. A method for preprocessing a semiconductor crystal, comprising removing the substrate, and then etching the surface of the substrate with a Br_2-methanol etching solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21086181A JPS5948797B2 (en) | 1981-12-28 | 1981-12-28 | Pretreatment method for semiconductor crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21086181A JPS5948797B2 (en) | 1981-12-28 | 1981-12-28 | Pretreatment method for semiconductor crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58115098A JPS58115098A (en) | 1983-07-08 |
| JPS5948797B2 true JPS5948797B2 (en) | 1984-11-28 |
Family
ID=16596310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21086181A Expired JPS5948797B2 (en) | 1981-12-28 | 1981-12-28 | Pretreatment method for semiconductor crystals |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5948797B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0261077A (en) * | 1988-08-24 | 1990-03-01 | Mitsubishi Metal Corp | Specular etching solution for gaas wafer and specular etching method |
-
1981
- 1981-12-28 JP JP21086181A patent/JPS5948797B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58115098A (en) | 1983-07-08 |
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