JPS5951157B2 - Manufacturing method of thin film pattern - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for more efficiently forming thin film patterns such as thin film resistors.

In general, for thin film patterns where the final pattern area is small and the etched area is large, the final required material is first formed on the substrate, and then a resist is applied. It is obtained by subsequent exposure, development, and etching.

However, in this case, the material finally required for etching is formed, a resist is applied, and then exposed and developed to perform etching. However, in this case, there is a drawback that during etching, the ends of the pattern that are finally required are also etched, resulting in an increase in the so-called side etch width. Furthermore, since the side etch width differs depending on the length direction, the dimensional accuracy of the resulting pattern deteriorates. This is due to the relatively long etching time. Lift-off is a thin film pattern manufacturing method that solves the drawbacks of direct etching.
) law is known. This method is carried out according to the following steps. (1) Form a thin film (for example, aluminum or silver) on a substrate.

(2) Apply a resist (photosensitive resin) on the thin film using an appropriate method.

(3) The resist is exposed to light through an original plate on which a predetermined pattern is formed, and then developed.

(4) The thin film is etched.

(5) On the substrate on which the negative pattern has been formed, a thin film of the material finally required is formed by vapor deposition or the like.

(6) The remaining part of the thin film formed in step (1) above is etched (corroded) with an etching solution (the thin film (negative pattern) in (1) above is etched (corroded), but the thin film (negative pattern) in above (5) is A thin film of material) is removed by etching with a non-etching liquid).

Through the above steps, the desired pattern appears on the substrate.

In such a lift-off method, if the area of the target pattern is small compared to the area other than the pattern on the substrate surface, the etching time in the step (4) above will be shortened; Since the time required to remove unnecessary substances in the step (6) above (the time required to remove the thin film formed in the step (1) above by etching) becomes longer, the area of the target pattern will eventually be larger than the pattern on the substrate surface. Regardless of whether the area is larger or smaller than the area, a predetermined etching time is required, resulting in poor production efficiency and increased costs, which is not preferable.
An object of the present invention is to provide a method for manufacturing a thin film pattern that can shorten the etching time in the lift-off method.

More specifically, the remaining part of the ultimately required pattern is formed by distributing the discarded patterns on one surface of the original plate.

The present invention will be explained in detail below.

FIG. 1 is a diagram showing the steps of a thin film pattern manufacturing method according to the present invention.

The explanation will be given below along the lines of FIG. 1a-i. (a) A substrate 1 made of glass or the like is prepared.

(b) Thin film 2 for forming a negative pattern on the substrate 1
form.

(c) A resist 3 is applied onto the thin film 2 by an appropriate method.

(d) Exposure is carried out using the original plate 4 on which the required pattern and the discarded pattern have been formed.

(e) Develop.

(f) Perform etching.

(ω Resist removal.

(h) Forming a thin film of the ultimately required substance by vapor deposition or the like.

(i) Remove the thin film 2.

The effect is described below: due to the exposure in (d). The resist portion irradiated with light dissolves as shown in (e).

Next, when it is immersed in an etching solution, the thin film 2 is dissolved in correspondence with the dissolved portions of the resist as shown in (f).
Furthermore, when the resist 3 is removed, a pattern of the thin film 2 as shown in 1g) is obtained. ．．゜In (i), 2a is the final required pattern, and the other pattern 2b
is a throwaway pattern. In the case of pattern 2a only, (h
) to (i), all other parts including the pattern 2b must be etched, but in the method shown in Fig. 1, the discarded pattern 2b, which has been subdivided by 1, is distributed over the entire surface, so the etching time is shortened. , less etching solution is required. FIG. 2 shows a thin film resistor as an example manufactured according to the above process. In the figure, 1' is a substrate made of glass or the like, 2' is a resistor such as cermet formed on the substrate 1', and 1" is a terminal formed on the resistor. 2" is a resistor. This is a discarded pattern formed in concentric circles made of the same material as body 2'.

In this case, since the sacrificial pattern 2'' is not in contact with the resistor 2', the resistor 2' will not lose its function in any way.In the above embodiment, the sacrificial pattern 2'' is arranged concentrically. However, it goes without saying that a plurality of linear patterns may be formed.

In the case of the lift-off method, if the discarded pattern is divided into smaller parts as described above, the contact area between the negative pattern and the removal liquid increases when removing the negative pattern (because the sides of the negative pattern also come into contact with the removal liquid). Pattern removal time is shortened and work efficiency is increased. Furthermore, if a large number of patterns similar to the predetermined pattern are formed at regular intervals as a discard pattern as shown in FIG. The line width T of the discarded pattern and the interval T between the patterns may be made equal), and it becomes easier to create a pattern on the original plate. Furthermore, since the intervals between the etched parts are equal, the etching condition in each part is the same. Therefore, during etching, the etching state can be observed in an easily visible area. Furthermore, since the pattern shape is simple and comparison with finished products is easy, inspections can be carried out quickly.
Naeru. The table below shows the results of using the method according to the invention in a lift-off method and comparing the results with conventional lift-off methods.

Incidentally, the numbers in the table indicate the proportions relative to the present invention. According to the present invention, the sacrificial pattern is divided into smaller parts and is distributed over one surface of the original plate, and the predetermined pattern and the sacrificial pattern are exposed at the same time, so that the etching time by the lift-off method is shortened. A method for manufacturing thin film patterns is provided.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the manufacturing process of the present invention. FIG. 2 is a diagram showing a thin film resistor manufactured according to the present invention, with FIG. 2a being a plan view and FIG. 2b being a sectional view. Explanation of the numbers of the main parts, 1... Board, 2...
...Thin film, 3...Resist, 4...
・Original plate, 2a, 2″...Finally required pattern, 2b, 2″″...Discarded pattern.

Claims (1)

[Claims] 1. A step of exposing through an original plate on which a predetermined pattern has been formed to form a negative pattern on the substrate, a step of forming a thin film of the final material on the substrate, and a step of etching the negative pattern. The method for manufacturing a thin film pattern by a lift-off method, which includes at least the step of removing, includes forming subdivided sacrificial patterns distributed over one surface of the original plate, and exposing the predetermined pattern and the sacrificial pattern at the same time. Characteristic method for manufacturing thin film patterns.