JPS5953699B2 - Resin sealing method - Google Patents
Resin sealing methodInfo
- Publication number
- JPS5953699B2 JPS5953699B2 JP55001690A JP169080A JPS5953699B2 JP S5953699 B2 JPS5953699 B2 JP S5953699B2 JP 55001690 A JP55001690 A JP 55001690A JP 169080 A JP169080 A JP 169080A JP S5953699 B2 JPS5953699 B2 JP S5953699B2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor element
- resin
- curvature
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
本発明は樹脂封止型半導体装置の樹脂封止方法に関し、
特に樹脂封止後の反りを防止する樹脂封止方法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for resin-sealing a resin-sealed semiconductor device.
In particular, the present invention relates to a resin sealing method for preventing warpage after resin sealing.
一般に電力用半導体素子はヒートシンクに固着され樹脂
封止されるが、加熱して溶解した樹脂で封止するため冷
却すると封止樹脂とヒートシンクの熱膨脹率の差により
、熱収縮した時反りが発生する。Generally, power semiconductor devices are fixed to a heat sink and sealed with resin, but since they are sealed with heated and melted resin, when cooled, warping occurs when the heat shrinks due to the difference in thermal expansion coefficient between the sealing resin and the heat sink. .
従来は第１図ａの如くヒートシンク１に銅板を用い、ヒ
ートシンク１上に半導体素子２を半田等で固着した後エ
ポキシ等で封止樹脂層３を形成していた。しかし熱膨脹
率の差のために第１図ｂの如く半導体素子２の方向に反
りが発生し、このため放熱板等に半導体装置をビスで個
定する場合に無理な荷重が加わり、封止樹脂層３のクラ
ック、リード線の断線、半導体素子２のクラックの原因
となり、信頼性の低下をもたらす欠点があつた。本発明
は上述した欠点に鑑みて為されたものであり、反りの発
生を完全に防止した樹脂封止方法を提供するものである
。Conventionally, a copper plate was used as the heat sink 1 as shown in FIG. 1A, and after the semiconductor element 2 was fixed on the heat sink 1 with solder or the like, a sealing resin layer 3 was formed with epoxy or the like. However, due to the difference in the coefficient of thermal expansion, warpage occurs in the direction of the semiconductor element 2 as shown in Figure 1b, and as a result, an excessive load is applied when attaching the semiconductor device to a heat sink or the like with screws, and the sealing resin This has the disadvantage of causing cracks in the layer 3, breakage of the lead wires, and cracks in the semiconductor element 2, resulting in a decrease in reliability. The present invention has been made in view of the above-mentioned drawbacks, and it is an object of the present invention to provide a resin sealing method that completely prevents the occurrence of warpage.
以下図面を参照して本発明を詳細に説明する。第２図ａ
、ｂ、ｃは本発明の実施例を示す断面図であり、４は銅
で作られた板状のヒートシンク、５はヒートシンク４上
に固着される消費電力の大きい半導体素子、６はエポキ
シから成る封止樹脂層である。The present invention will be described in detail below with reference to the drawings. Figure 2a
, b, and c are cross-sectional views showing embodiments of the present invention, in which 4 is a plate-shaped heat sink made of copper, 5 is a semiconductor element with high power consumption fixed on the heat sink 4, and 6 is made of epoxy. This is a sealing resin layer.
第２図ａに於いて、ヒートシンク４は半導体素子５を固
着する前にプレス等に依り所定の形状に整形されると共
に、半導体素子５の固着面と反対方向に彎曲される。In FIG. 2a, before fixing the semiconductor element 5, the heat sink 4 is shaped into a predetermined shape using a press or the like, and is also bent in the opposite direction to the surface to which the semiconductor element 5 is fixed.
ここで温度と反りの曲率半径にとの関係は次式で表わせ
る。Here, the relationship between temperature and radius of curvature of warpage can be expressed by the following equation.
７■ｆ（ｔｌ、を２、Ｅ１、Ｅ２、１１、１２）× （
α１−α２）×ΔＴｔｌ、、を２・・・・・・封止樹脂
層６、ヒートシンク４の厚さＥ１、、Ｅ２・・・・・・
封止樹脂層６、ヒートシンク４のヤング率１１、１２・
・・・・・外形の大きさ （長さ、幅）α１、α２・・
・・・・封止樹脂層６、ヒートシンク４フの熱膨脹率Δ
Ｔ・・・・・・封止温度からの温度変化この式から１の
特性は第３図に示される直線となる。7 ■ f (tl, 2, E1, E2, 11, 12) × (
α1-α2)×ΔTtl, 2...The thickness of the sealing resin layer 6 and the heat sink 4 E1, E2...
The Young's modulus of the sealing resin layer 6 and the heat sink 4 is 11, 12.
...External size (length, width) α1, α2...
...Thermal expansion coefficient Δ of the sealing resin layer 6 and the heat sink 4
T...Temperature change from sealing temperature From this equation, the characteristic of 1 becomes the straight line shown in FIG.
半導体装置を放熱板等に取り付けて動作状態に丁ある時
に反りが無くなるためには、動作状態に於ける温度で生
じる反りの曲率半径と等しい曲率半径で第２図ａの如く
半導体素子５の固着面と反対方向にヒートシンク４を予
じめ彎曲させておけば良い。In order to eliminate warping when the semiconductor device is attached to a heat sink or the like and is in the operating state, the semiconductor element 5 must be fixed with a radius of curvature equal to the radius of curvature of the warp that occurs at the temperature in the operating state, as shown in Figure 2a. The heat sink 4 may be bent in advance in the direction opposite to the surface.
ここで動作状態の温度をＴＯｐｇとすると前述した式及
び第３図より予じめ彎曲させる曲率はＴＭ−ＴＯｐｇ（
ＴＭは樹脂封止する温度）をΔＴとして１／ＲＯｐｇが
得られる。この様に彎曲したヒートシンク４に半導体素
子５を固着し、エポキシの溶解した樹脂を型に流して封
止樹脂層６を形成する。Here, if the temperature in the operating state is TOpg, the curvature to be curved in advance is TM-TOpg (
TM is the resin sealing temperature) and ΔT is 1/ROpg. A semiconductor element 5 is fixed to the heat sink 4 curved in this manner, and a sealing resin layer 6 is formed by pouring melted epoxy resin into a mold.
その後冷却すると封止樹脂層６の収縮に依つてヒートシ
ンク４は半導体素子５の固着方向に力が加わるが、ヒー
トシンク４は予じめ逆方向に彎曲しているためにその彎
曲の曲率半径は大きくなり、徐々に彎曲が弱められる。
動作状態に於ける温度と略等しくなると第２図ｂに示す
如くほとんど彎曲のない平面となり、放熱板等にビス止
めした場合に内部に力が加わらず封止樹脂層６及び半導
体素子４のクラツタやリード線の断線が防止できる。ま
た非動作状態になり室温と同じになつた場合、室温をＴ
Ｒとすると前述した式及び第３図から曲率はＴＭ−ＴＲ
に対応する１／ＲＲと求められるが、予じめ１／ＲＯｐ
ｇの分だけ逆方向に彎曲されているから、室温と同じに
なつたことに依り生じる反りは第２図Ｃの如く半導体素
子５の固着方向に曲率１／ＲＲ−１／ＲＯｐｇ：１／ｒ
′Ｒ分だけとなる。When it is then cooled, the shrinkage of the sealing resin layer 6 applies force to the heat sink 4 in the direction in which the semiconductor element 5 is fixed, but since the heat sink 4 is curved in the opposite direction in advance, the radius of curvature of the curve is large. The curvature gradually weakens.
When the temperature is approximately equal to the temperature in the operating state, it becomes a flat surface with almost no curvature as shown in FIG. This prevents lead wire breakage. Also, if the room temperature becomes the same as the room temperature due to non-operation, the room temperature is set to T.
If R, the curvature is TM-TR from the above formula and Figure 3.
is calculated as 1/RR corresponding to 1/ROp in advance.
Since it is curved in the opposite direction by an amount of g, the warp that occurs due to the room temperature being the same as that of the room temperature has a curvature of 1/RR-1/ROpg: 1/r in the fixing direction of the semiconductor element 5, as shown in FIG. 2C.
'R' is the only amount.
この反りは非常に小さく従来の反りと比らべると、従来
１／ＲＲ＝ｆ （ｔ１、Ｔ２、Ｅｌ．Ｅ２、１１、１
２）×（α１−α２） （ＴＭ−ＴＲ）本発明 １／Ｆ
Ｒ＝ｆ （Ｔｌ．ｔ２、Ｅｌ．Ｅ２、１１、１２）×（
α１−α２） （ＴＯｐｇ−ＴＲ）となり、樹脂封止温
度ＴＭを１５０℃〜１８０℃とし、動作状態の温度ＴＯ
ｐｇを４０℃〜６０℃、室温ＴＲを２５℃とすると１／
ＲＲ：１／ビＲ
＝（ＴＭ−ＴＲ）： （ＴＯｐｇ−ＴＲ）＋６：１とな
り、従来の１／６となる。This warpage is very small and compared to the conventional warpage, the conventional warpage is 1/RR=f (t1, T2, El.E2, 11, 1
2)×(α1-α2) (TM-TR) Present invention 1/F
R=f (Tl.t2, El.E2, 11, 12)×(
α1-α2) (TOpg-TR), the resin sealing temperature TM is 150°C to 180°C, and the operating state temperature TO
When pg is 40°C to 60°C and room temperature TR is 25°C, 1/
RR:1/BiR=(TM-TR):(TOPg-TR)+6:1, which is 1/6 of the conventional value.
従つて従来第１図ｂの如く反りの最大幅がδであつた場
合に本発明では第２図Ｃの如く磨となり、放熱に取り付
けた場合に内部に加わる力は非常に小さくなり、封止樹
脂層６及び半導体素子５のクラツクやリード線の断線が
防止できる。上述の如く本発明に依れば樹脂封止する前
にヒートシンクを予じめ半導体素子の固着面と反対方向
に彎曲しておくことにより、動作状態に於ける反りを防
止でき、信頼性の大幅な向上が図れるものである。Therefore, if conventionally the maximum width of the warp was δ as shown in Figure 1B, in the present invention it is warped as shown in Figure 2C, and the force applied to the inside when attached to the heat dissipation becomes very small, making it difficult to seal. Cracks in the resin layer 6 and semiconductor element 5 and breakage of lead wires can be prevented. As described above, according to the present invention, by bending the heat sink in the opposite direction to the surface to which the semiconductor element is fixed before resin sealing, it is possible to prevent warping during operation, greatly improving reliability. This will lead to significant improvements.
第］図Ａ，ｂは従来例を示す断面図、第２図Ａ，ｂ，ｃ
は本発明の実施例を示す断面図、第３図は温度ΔＴと反
りの曲率半径との関係を示すグラフである。
４・・・・・・ヒートシンク、５・・・・・・半導体素
子、６・・・・・・封止樹脂層。] Figures A and b are sectional views showing the conventional example, and Figure 2 A, b, and c.
3 is a cross-sectional view showing an embodiment of the present invention, and FIG. 3 is a graph showing the relationship between temperature ΔT and radius of curvature of warpage. 4...Heat sink, 5...Semiconductor element, 6...Sealing resin layer.
Claims (1)
脂封止方法に於いて、前記ヒートシンクを半導体素子固
着面と反対方向に彎曲せしめ、その彎曲の曲率半径を使
用動作温度で生じる曲率半径と等しく形成し、その後半
導体素子を前記ヒートシンクに固着し樹脂封止すること
を特徴とする樹脂封止方法。1. In a resin sealing method in which a semiconductor element is fixed to a heat sink and sealed with resin, the heat sink is curved in the opposite direction to the surface on which the semiconductor element is fixed, and the radius of curvature of the curve is formed to be equal to the radius of curvature that occurs at the operating temperature. and then fixing the semiconductor element to the heat sink and sealing it with resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55001690A JPS5953699B2 (en) | 1980-01-09 | 1980-01-09 | Resin sealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55001690A JPS5953699B2 (en) | 1980-01-09 | 1980-01-09 | Resin sealing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698833A JPS5698833A (en) | 1981-08-08 |
| JPS5953699B2 true JPS5953699B2 (en) | 1984-12-26 |
Family
ID=11508508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55001690A Expired JPS5953699B2 (en) | 1980-01-09 | 1980-01-09 | Resin sealing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5953699B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5098239B2 (en) * | 2006-07-19 | 2012-12-12 | 株式会社デンソー | Mold package and manufacturing method thereof |
| JP6107197B2 (en) * | 2013-02-13 | 2017-04-05 | 富士電機株式会社 | Manufacturing method of semiconductor device |
-
1980
- 1980-01-09 JP JP55001690A patent/JPS5953699B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698833A (en) | 1981-08-08 |
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