JPS595883B2 - Manufacturing method of liquid crystal cell - Google Patents
Manufacturing method of liquid crystal cellInfo
- Publication number
- JPS595883B2 JPS595883B2 JP1034582A JP1034582A JPS595883B2 JP S595883 B2 JPS595883 B2 JP S595883B2 JP 1034582 A JP1034582 A JP 1034582A JP 1034582 A JP1034582 A JP 1034582A JP S595883 B2 JPS595883 B2 JP S595883B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal cell
- film
- manufacturing
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 10
- 210000002858 crystal cell Anatomy 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- -1 organosilane compound Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Natural products CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000009835 boiling Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- VIJYFGMFEVJQHU-UHFFFAOYSA-N aluminum oxosilicon(2+) oxygen(2-) Chemical compound [O-2].[Al+3].[Si+2]=O VIJYFGMFEVJQHU-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 1
- 229960001826 dimethylphthalate Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- DWCFFYWHRSPCAT-UHFFFAOYSA-N ethenyl-tris(ethoxymethoxy)silane Chemical compound CCOCO[Si](OCOCC)(OCOCC)C=C DWCFFYWHRSPCAT-UHFFFAOYSA-N 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
本発明は、液晶セルの製造方法に係り、特に絶縁基板の
表面に形成する酸化アルミニウム−酸化シリコン（Ａｌ
２Ｏ３−ＳｉＯ２）からなる透明絶縁被膜に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a liquid crystal cell, and in particular to an aluminum oxide-silicon oxide (Al
2O3-SiO2).
一般にＡｌ２０３−ＳｉＯ２透明被膜の形成方法は真空
蒸着法、化学スプレー法、浸漬法が主である。Generally, the main methods for forming an Al203-SiO2 transparent film are vacuum evaporation, chemical spraying, and dipping.
真空蒸着法は形成される被膜特性は優れているが量産性
に問題がある。化学スプレー法、浸漬法は量産性はある
が、表示パターンを作る場合にエッチングする必要があ
り、工程が増える。従来例のこうした欠点をなくす為、
本発明はスクリーン印刷が可能で印刷後の焼成によつて
Ａｌ２Ｏ３−ＳｉＯ２となる印刷ペーストを用い透明電
極上に所望の形状のＡｌ２０３−ＳｉＯ２の透明金属酸
化物被膜を形成する液晶セルの製造方法を提供するにあ
る。Although the vacuum evaporation method has excellent coating properties, it has problems in mass production. Chemical spraying and dipping methods are suitable for mass production, but require etching to create display patterns, which increases the number of steps. In order to eliminate these drawbacks of the conventional example,
The present invention provides a method for manufacturing a liquid crystal cell in which a transparent metal oxide film of Al203-SiO2 in a desired shape is formed on a transparent electrode using a printing paste that can be screen printed and becomes Al2O3-SiO2 by firing after printing. It is on offer.
この目的を達成するため、本発明は、有機溶剤に可溶で
焼成によつてＡｌ２Ｏ３−ＳｉＯ２の被膜を形成する各
々の有機金属化合物と、有機溶剤と、粘性剤とを混合し
てスクリーン印刷に適合した性状のペーストをつくり、
このペーストをスクリーン印刷によつて絶縁基板上に所
定のパターン形状に印刷せしめ、その後に焼成して前記
有機溶剤ならびに粘性剤を除去せしめるとともにＡｌ２
Ｏ３−ＳｌＯ２の透明絶縁被膜を形成することを特徴と
する。In order to achieve this object, the present invention involves screen printing by mixing each organometallic compound that is soluble in an organic solvent and forms an Al2O3-SiO2 film upon firing, an organic solvent, and a viscous agent. Create a paste with suitable properties,
This paste is printed in a predetermined pattern shape on an insulating substrate by screen printing, and then fired to remove the organic solvent and viscous agent, and to remove the Al2
It is characterized by forming a transparent insulating film of O3-SlO2.
前記有機アルミニウム化合物としては化学的に安定なア
ルミニウム錯体、例えばアセチルアセトン（Ｈａｃａｃ
）に配位したトリスアセチルアセトナートアルミニウム
Ｅ）〔記号Ａｌ（ａｃａｃ）３〕、シリコン化合物とし
てはビニルトリス（２−メトキシエトキシ）シランの如
き有機シラン化合物が好適である。The organoaluminum compound may be a chemically stable aluminum complex, such as acetylacetone (Hacac
) Trisacetylacetonatoaluminum E) [symbol Al(acac)3] coordinated to ), and as the silicon compound, an organic silane compound such as vinyltris(2-methoxyethoxy)silane is suitable.
また、これらの有機金属化合物を溶解させる有機溶剤と
しては、ターピネオール、２−エチルエキサノール、ベ
ンジルアルコール等の高沸点アルコール類、ベンジルア
セテート、ジメチルフタレート等の高沸点エステル類、
カルビトール、ブチルカルビトール、ブチルセロソルブ
等の高沸点アルコールエーテル類等の高沸点有機溶剤が
用いられ、粘性剤としてニトロセルローズ、エチルセル
ローズ等のセルローズ化合物が使用される。このように
して作られたペーストを使用し、所望の形状にパターン
化されたスクリーン版を用いてスクリーン印刷し、予備
乾燥後４００℃以上の温度で焼成するとＡｌ２Ｏ３−Ｓ
ｌＯ２透明被膜が所望の形状に形成される。この被膜は
透明であることは勿論、膜強度が大で、比較的高い絶縁
性を有する。又、ペースト中に含有するＡｌ−Ｓｉの量
を適当にコントロールすることで５０００λ以下の被膜
を自由に形成することができる。次に本発明の実施例に
ついて説明する。実施例 １
透明な２枚のガラス製絶縁基板上に、Ｉｎ２Ｏ３の透明
電極をスパツタリングによつて形成する。In addition, examples of organic solvents for dissolving these organometallic compounds include high-boiling alcohols such as terpineol, 2-ethylexanol, and benzyl alcohol; high-boiling esters such as benzyl acetate and dimethyl phthalate;
High boiling point organic solvents such as high boiling point alcohol ethers such as carbitol, butyl carbitol and butyl cellosolve are used, and cellulose compounds such as nitrocellulose and ethyl cellulose are used as viscosity agents. Using the paste made in this way, screen printing using a screen plate patterned into the desired shape, pre-drying and baking at a temperature of 400°C or higher results in Al2O3-S
A 102 transparent coating is formed into the desired shape. This film is not only transparent, but also has high film strength and relatively high insulation properties. Further, by appropriately controlling the amount of Al--Si contained in the paste, a film having a thickness of 5000λ or less can be freely formed. Next, examples of the present invention will be described. Example 1 Transparent electrodes of In2O3 are formed on two transparent glass insulating substrates by sputtering.
一方、トリスアセチルアセトナートアルミニウム（）と
、ビニルトリス（２−エトキシメトキシ）シランとの総
計５ｗｔ？に、有機溶剤として２−エチルヘキサノール
６０ｗｔ％、ベンジルアルコール２５ｗｔ％、更に粘性
剤としてニトロセルローズ１０ｗｔ％を添加してペース
ト粘度８０，０００ｃｐとした印刷用ペーストを調整す
る。このペーストを用いてステンレスネツト２５０メツ
シユのスクリーン板で、前記透明電極を形成した基板上
に所定のパターン形状にスクリーン印刷し、１５０℃で
２０分間予備乾燥後、５０００Ｃで３０分間焼成してＡ
ｌ２Ｏ３−ＳｌＯ２被膜を形成する。On the other hand, the total weight of trisacetylacetonatoaluminum () and vinyltris(2-ethoxymethoxy)silane is 5wt? To this, 60 wt% of 2-ethylhexanol, 25 wt% of benzyl alcohol as an organic solvent, and 10 wt% of nitrocellulose as a viscosity agent were added to prepare a printing paste with a paste viscosity of 80,000 cp. Using this paste, a predetermined pattern was screen printed on the substrate on which the transparent electrode was formed using a stainless steel net 250 mesh screen plate, and after preliminary drying at 150°C for 20 minutes, it was baked at 5000°C for 30 minutes.
Form a l2O3-SlO2 film.
更にＡｌ２Ｏ３−ＳｉＯ２被膜上に水平配向剤（東レシ
リコーン社製 製品名ＳＨ６４Ｏ４Ｏ）により配向処理
層を形成した後、上下の基板において互に直交するよう
にラピングし、しかるのち２枚の基板をエポキシ系接着
剤を用いてギヤツプが１０μｍになるように貼り合わせ
る。Furthermore, after forming an alignment treatment layer on the Al2O3-SiO2 film using a horizontal alignment agent (manufactured by Toray Silicone Co., Ltd., product name: SH64O4O), the upper and lower substrates are lapped so that they are perpendicular to each other, and then the two substrates are coated with an epoxy-based Attach them using adhesive so that the gap is 10 μm.
このセルに誘電異方性が正のネマテイツク液晶（チツソ
社製製品名ＧＲ−６１）を封入し、セルの上下にそれぞ
れ基板のラピング方向と偏光軸が平行になるように偏光
板を貼りつけＴＮ液晶セルを完成する。実施例 ２少な
くともｌ枚が透明な２枚の絶縁基板上にＩｎ２Ｏ３の透
明電極をスパツタリングにより形成し、実施例１に示し
た印刷ペーストを所望の形状に印刷して予備乾燥後、５
００℃で３０分間焼成することによりＡｌ２Ｏ３−Ｓｌ
Ｏ２の絶縁膜を形成する。A nematic liquid crystal with positive dielectric anisotropy (product name: GR-61 manufactured by Chitsuso Corporation) is sealed in this cell, and polarizing plates are attached to the top and bottom of the cell so that the wrapping direction of the substrate and the polarization axis are parallel to each other. Complete the liquid crystal cell. Example 2 Transparent electrodes of In2O3 were formed by sputtering on two insulating substrates, at least one of which was transparent, the printing paste shown in Example 1 was printed in a desired shape, and after preliminary drying,
By baking at 00℃ for 30 minutes, Al2O3-Sl
An O2 insulating film is formed.
更に垂直配向剤のクロム錯体により垂直配向層を形成、
２枚の基板をエポキシ系接着剤により貼り合わせ、液晶
セルを組み立て青色染料を１ｗｔ７０と、コレステリツ
ク液晶であるコレステリツクエルケート１．３ｗｔ％と
を添加した誘電異方性が負のネマテイツク液晶を封入す
れば、ポジ表示相転移ゲストホスト形液晶セルを得る。
以上述べたようにこの絶縁膜を透明電極上に形成するこ
とによりＴＮ形、相転移形、ゲストホスト形、ＤＳ形、
その他各種のタイプの液晶セルを作り得る。Furthermore, a vertical alignment layer is formed using a chromium complex as a vertical alignment agent.
Two substrates are bonded together using epoxy adhesive, a liquid crystal cell is assembled, and a nematic liquid crystal with negative dielectric anisotropy containing 1wt70 of blue dye and 1.3wt% of cholesteric liquid crystal cholesteric liquid crystal is sealed. Then, a positive display phase change guest-host type liquid crystal cell is obtained.
As described above, by forming this insulating film on the transparent electrode, TN type, phase change type, guest host type, DS type, etc.
Various other types of liquid crystal cells can be made.
なお、この絶縁膜をガラス基板上に形成することによつ
て同時に防ナトリウム膜となるので、液晶物質の劣化を
防止する効果がある。Note that by forming this insulating film on a glass substrate, it also serves as an anti-sodium film, which has the effect of preventing deterioration of the liquid crystal material.
本発明は前述のような構成になつており、生産性よくし
かも微細なパターンの透明絶縁被膜が形成できる液晶セ
ルの製造方法を提供することができる。The present invention has the above-described configuration, and can provide a method for manufacturing a liquid crystal cell with high productivity and in which a transparent insulating film with a fine pattern can be formed.
Claims (1)
び酸化シリコンより成る被膜を形成するアルミニウムの
アセチルアセトン配位錯体有機シラン化合物と、有機溶
剤と、粘性剤とを混合してスクリーン印刷に適合した性
状のペーストをつくり、このペーストをスクリーン印刷
によつて絶縁基板上に所定のパターン形状に印刷せしめ
、その後に焼成して前記有機溶剤ならびに粘性剤を除去
せしめるとともに酸化アルミニウムと酸化シリコンから
成る透明な絶縁被膜を形成したことを特徴とする液晶セ
ルの製造方法。1 Properties suitable for screen printing by mixing an organosilane compound, an acetylacetone coordination complex of aluminum, which is soluble in an organic solvent and forms a film made of aluminum oxide and silicon oxide upon firing, an organic solvent, and a viscous agent. This paste is printed in a predetermined pattern on an insulating substrate by screen printing, and then baked to remove the organic solvent and viscous agent, and to form a transparent insulating material made of aluminum oxide and silicon oxide. A method for manufacturing a liquid crystal cell, characterized in that a film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034582A JPS595883B2 (en) | 1982-01-26 | 1982-01-26 | Manufacturing method of liquid crystal cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1034582A JPS595883B2 (en) | 1982-01-26 | 1982-01-26 | Manufacturing method of liquid crystal cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58127915A JPS58127915A (en) | 1983-07-30 |
| JPS595883B2 true JPS595883B2 (en) | 1984-02-07 |
Family
ID=11747593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1034582A Expired JPS595883B2 (en) | 1982-01-26 | 1982-01-26 | Manufacturing method of liquid crystal cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595883B2 (en) |
-
1982
- 1982-01-26 JP JP1034582A patent/JPS595883B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58127915A (en) | 1983-07-30 |
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