JPS596512B2 - Resin package method - Google Patents
Resin package methodInfo
- Publication number
- JPS596512B2 JPS596512B2 JP15026777A JP15026777A JPS596512B2 JP S596512 B2 JPS596512 B2 JP S596512B2 JP 15026777 A JP15026777 A JP 15026777A JP 15026777 A JP15026777 A JP 15026777A JP S596512 B2 JPS596512 B2 JP S596512B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- protective layer
- inorganic filler
- filler
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
【発明の詳細な説明】
この発明は、例えば電子部品類などの樹脂パッケージ方
式に関し、さらに詳しくは流動浸せき塗装などによりパ
ッケージをする前にあらかじめ電子部品などの被パッケ
ージ物に液状の熱硬化性樹脂とこの液状樹脂に対して沈
でん可能な無機質の充填剤よりなる第1の保護層を形成
させた後従来法により樹脂パッケージして第2の保護層
を設けるようにした特に電子部品類のパッケージに好適
の信頼性の高い樹脂パッケージ方式に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resin packaging method for, for example, electronic components, and more specifically, the present invention relates to a resin packaging method for electronic components, and more specifically, a liquid thermosetting resin is applied to the packaged object such as the electronic component in advance before packaging by fluidized dip coating or the like. A first protective layer made of a precipitable inorganic filler is formed on the liquid resin, and then the resin is packaged using a conventional method to provide a second protective layer.This method is particularly suitable for packaging electronic components. The present invention relates to a preferred and highly reliable resin packaging system.
電子部品には薄膜抵抗、IC、ハイブリッドIC)トラ
ンジスター、ダイオードなどがあり、種々の環境条件で
の信頼性向上をはかるため、パッケージが施される。Electronic components include thin film resistors, ICs, hybrid ICs) transistors, diodes, etc., and are packaged to improve reliability under various environmental conditions.
一般に当業界では、低コストが可能な樹脂パッケージに
移行しているのが現状である。この樹脂パッケージには
トランスファーモールド、キヤステング、デイツピング
、ドロツピング、タブレット、ポツテングなどの方法が
あるが、量産性がよく材料ロスのない無公害省資源型の
粉体塗装の一種である流動浸せき塗装法を適用すること
は有益なことである。In general, the current situation in this industry is that there is a shift to resin packages that can be produced at lower costs. There are various methods for producing this resin package, such as transfer molding, casting, dipping, dropping, tableting, and potting, but fluid-dip coating is a type of powder coating that is easy to mass produce and is pollution-free and resource-saving, with no material loss. It is beneficial to apply it.
上記流動浸せき塗装とは多孔板を介して流動槽に粉体塗
料を入れ、多孔板の下部より気体を導入することにより
粉体塗料を流動させ、この流動粉体中にあらかじめ該粉
体塗料の隅点以上に加熱した被塗装物を浸せきすること
により表面に塗膜を形成させ、後加熱することにより性
質のすぐれた塗膜を形成するものである。この工程をく
り返し行なうことにより膜厚は0.2〜3mmまでの範
囲の広い塗膜が得られる。このような流動浸せき塗装に
より電子部品類を樹脂パッケージする方法も知られてい
るが、−40℃〜150℃のヒートサイクルで200サ
イクル以上の性能を保持し、耐水性のすぐれた樹脂パッ
ケージを行なうことは不可能であつた。一方、樹脂パッ
ケージを行なう前に予め被パッケージ物の表面にシリコ
ンゴムを塗布して回路素子などを保護する方法も知られ
ているが、上記シリコンゴムはエポキシ樹脂などパッケ
ージ用樹脂との接着性が悪いために上記したような厳し
いヒートサイクルテストでしばしばワレが発生するこい
う欠点があつた。The above-mentioned fluidized dip coating refers to the powder coating that is placed in a fluidized tank through a perforated plate, and the powder coating is made to flow by introducing gas from the bottom of the perforated plate. A coating film is formed on the surface by dipping the object heated above the corner point, and a coating film with excellent properties is formed by post-heating. By repeating this step, a coating film with a wide range of thickness from 0.2 to 3 mm can be obtained. It is also known to package electronic components in resin using fluidized dip coating, but this resin package maintains performance for more than 200 heat cycles from -40℃ to 150℃ and has excellent water resistance. That was impossible. On the other hand, it is also known to protect circuit elements by applying silicone rubber to the surface of the packaged object before resin packaging, but the silicone rubber has poor adhesion with packaging resins such as epoxy resin. As a result, cracks often occur during the severe heat cycle tests mentioned above.
この発明は上記欠点を排除するためになされたものであ
り、ヒートサイクルに強いパツケージ方式を提供するも
のである。This invention was made to eliminate the above-mentioned drawbacks, and provides a package system that is resistant to heat cycles.
本発明の特徴は、被パツケージ物の表面に、該表面に接
近するほど無機質充填剤濃度を高くして熱膨脹率を低く
した第1の樹脂保護層を形成し、この第1の保護層を囲
繞する如く形成した第2の樹脂保護層を設けたことにあ
る。The present invention is characterized in that a first resin protective layer is formed on the surface of the packaged object, and the first resin protective layer has a higher inorganic filler concentration and a lower coefficient of thermal expansion as it gets closer to the surface, and the first resin protective layer is formed to surround the first protective layer. The second resin protective layer is provided in such a manner that the second resin protective layer is formed as shown in FIG.
上記第1の保護層を形成するには、例えば沈でん可能な
無機質充填剤を含む熱硬化性樹脂を被パツケージ物の所
望の表面に塗布して上記充填剤を沈でんさせる第1の方
法、または熱硬化性樹脂を被パツケージ物の表面に塗布
した後、上記樹脂に対し沈でん可能な充填剤を上記塗膜
上にふりかけ塗膜中に沈降させる第2の方法などが好適
に用いられる。The first protective layer can be formed, for example, by applying a thermosetting resin containing a precipitable inorganic filler to the desired surface of the packaged object and precipitating the filler, or by heating. A second method is preferably used, in which a curable resin is applied to the surface of the packaged object, and then a filler that can be precipitated by the resin is sprinkled onto the coating film and allowed to precipitate into the coating film.
上記第1の保護層に用いられる液状の熱硬化性樹脂とし
ては、特に制限はなく例えばエポキシ樹脂、ポリエステ
ル樹脂、ポリウレタン樹脂などをあげることができる。The liquid thermosetting resin used for the first protective layer is not particularly limited, and examples thereof include epoxy resin, polyester resin, polyurethane resin, and the like.
これらは室温硬化型または加熱硬化型のどちらでもよい
。これらは硬化時に粘度が低いものほど上記無機質充填
剤の沈でんを促進させるので好都合であり、また上記熱
硬化性樹脂は、耐湿性を重視すればガラス転移温度(以
下T,と略す)の高いほど有利であり、素子の保護を重
視すれば、Tgの低いものほど有利である。These may be either room temperature curing type or heat curing type. The lower the viscosity of these resins during curing, the more favorable the precipitation of the inorganic filler, and the higher the glass transition temperature (hereinafter abbreviated as T) of the thermosetting resin, the higher the moisture resistance If protection of the element is important, the lower the Tg, the more advantageous it is.
またこの発明に用いられる無機質充填剤としては、例え
ばアルミナ、ガラスシリカ、石英、炭酸カルシウム、マ
イカなどが好適なものとしてあげられる。Suitable examples of the inorganic filler used in the present invention include alumina, glass silica, quartz, calcium carbonate, and mica.
なお上記以外にも一般的に充填剤として用いられている
ものはいずれも使用可能である。なお上記第1の保護層
に用いる熱硬化性樹脂および充填剤は吸水、吸湿による
電食を防ぐことが要求される場合にはイオン性の不純物
の少ないものを用いることが好ましい。上記第1の方法
により第1の保護層を形成する場合には、無機質充填剤
の粒子径は、30〜400メツシユの粒度範囲のものが
好ましく、熱硬化性樹脂に充填してよく脱胞混合するこ
とが重要である。In addition to the above, any fillers commonly used as fillers can be used. Note that the thermosetting resin and filler used in the first protective layer preferably contain less ionic impurities when it is required to prevent electrolytic corrosion due to water absorption and moisture absorption. When forming the first protective layer by the above first method, the particle size of the inorganic filler is preferably in the particle size range of 30 to 400 mesh, and the inorganic filler is preferably filled into the thermosetting resin and mixed with defossulation. It is important to.
また無機質充填剤の配合量は10〜80wt70、望ま
しくは30〜60wt%が好適でこれより少ないとこの
発明の効果が減少し、多いと充填不可能になる。上記第
1の方法を行なうには上記熱硬化性樹脂と無機質粉末を
常法により混合した後、熱硬化性樹脂中の充填剤が沈で
んしないようによく撹拌し、電子部品類などの被パツケ
ージ物の所定部に塗布する必要がある。塗布された樹脂
中の沈でん可能な充填剤は、被パツケージ物上に、電子
部品であれば素子の上に沈でんし、素子の近傍は充填剤
濃度が高く熱膨脹係数の小さな樹脂層が形成され、塗布
膜の表層部は樹脂分の多い層ができる。なお、充填剤が
よく沈でんした状態で硬化または半硬化することが好ま
しい。なお、上記塗布を行なう場合には厚さが0.2m
m以上となるようにすることが好ましく、これよりも薄
いと本発明の効果が少ないものとなる。Further, the amount of the inorganic filler blended is preferably 10 to 80 wt%, preferably 30 to 60 wt%; if it is less than this, the effect of the present invention will be reduced, and if it is more than this, it will become impossible to fill it. To carry out the first method, the thermosetting resin and the inorganic powder are mixed in a conventional manner, and then thoroughly stirred to prevent the filler in the thermosetting resin from settling. It is necessary to apply it to the designated area. The precipitable filler in the applied resin settles on the packaged object, on the element in the case of an electronic component, and a resin layer with a high filler concentration and a small coefficient of thermal expansion is formed near the element. A layer with a high resin content is formed on the surface layer of the coating film. Note that it is preferable that the filler is cured or semi-cured in a well-precipitated state. In addition, when performing the above coating, the thickness is 0.2 m.
It is preferable that the thickness be at least m, and if it is thinner than this, the effect of the present invention will be reduced.
さらに、上記充填剤の沈でんは、硬化中に行なわれるよ
うにすることも容易である。一方、上記第2の方法によ
つて第1の保護層を形成するには、熱硬化性樹脂の塗布
厚さは、被パツケージ物が電子部品であれば素子がかく
れる程度で0.2〜1mTLが良好である。Furthermore, the precipitation of the filler can easily be carried out during curing. On the other hand, in order to form the first protective layer by the second method, the coating thickness of the thermosetting resin should be 0.2 to 0.2 to 0.2 to 0.2 to cover the electronic component if the object to be packaged is an electronic component. 1 mTL is good.
なお、塗布方法は特に限定されず、要は樹脂膜が形成さ
れれば良い。また、無機質充填剤の粒子径は10〜15
0メツシユのものが好適に用いられる。粒子径は上記範
囲よりも大きいと電子部品類の仕上り形状が不均一にな
り、耐ヒートサイクル性が向上しない。またこれより小
さいと液状の熱硬化性樹脂中に沈でんしないため、高充
填化が不可能である。無機質充填剤の充填量は液状の熱
硬化性樹脂膜の上に無機質充填剤が露出する程度に充填
する。無機質充填剤はあらかじめ加熱したものを用いれ
ば熱硬化性樹脂中にすみやかに沈でんするため作業性が
よい。上記のようにして熱硬化性樹脂の塗膜中に無機質
充填剤を入れて沈でんさせ、樹脂を硬化または半硬化す
ることにより第1の保護膜を形成される。以上のように
して第1の保護層を形成した後は、該第1の保護膜を囲
繞する如く第2の保護膜を公知の従来技術により形成す
ることにより容易に本発明の樹脂パツケージ方式を得る
ことができる。Note that the coating method is not particularly limited, as long as a resin film is formed. In addition, the particle size of the inorganic filler is 10 to 15
One with 0 mesh is preferably used. If the particle size is larger than the above range, the finished shape of electronic components will become non-uniform and the heat cycle resistance will not improve. Moreover, if it is smaller than this, it will not settle in the liquid thermosetting resin, making it impossible to achieve high filling. The inorganic filler is filled in an amount such that the inorganic filler is exposed on the liquid thermosetting resin film. If the inorganic filler is heated in advance, it will quickly settle into the thermosetting resin, resulting in good workability. The first protective film is formed by introducing the inorganic filler into the thermosetting resin coating as described above, allowing it to settle, and then curing or semi-curing the resin. After forming the first protective layer as described above, the resin package method of the present invention can be easily implemented by forming a second protective layer using a known conventional technique so as to surround the first protective layer. Obtainable.
以下実施例について本発明をさらに具体的に説明する。
実施例 1
エピコート815(シエル社、商品名)1009とエポ
メートBOO2(昧の素社、商品名)509との混合物
に粒度40−150メツシユの石英粉末を1509添加
してライカイ機にて脱胞混合し、第1の保護層に用いる
樹脂液を用意した。The present invention will be described in more detail with reference to Examples below.
Example 1 Quartz powder 1509 with a particle size of 40-150 mesh was added to a mixture of Epicote 815 (Ciel Co., Ltd., trade name) 1009 and Epomate BOO2 (Mai no Motosha Co., Ltd., trade name) 509, and the mixture was devacuolated using a Raikai machine. Then, a resin liquid used for the first protective layer was prepared.
次にアルミナ基板上に形成された膜抵抗、半導体チツプ
、コンデンサーチツプなどの素子からなるハイブリツド
ICを水平に置き、上記素子表面に上記樹脂液をハケで
0.6mm厚に塗布し、室温で2時間放置したところ樹
脂は硬化しており、硬化樹脂中の石英粉末の密度は素子
表面に近いほど高いものであつた。次にこの基板にエポ
キシ粉鉢下256(ソーマル工業社製)を用いて公知の
従来技術により流動浸漬塗装し、厚さ約1mmの塗膜(
第2の保護層)を形成させた。比較のため第1の保護層
を設けないハイブリツドICを同様に流動浸せき塗装し
た。Next, a hybrid IC consisting of elements such as a film resistor, a semiconductor chip, and a capacitor chip formed on an alumina substrate is placed horizontally, and the resin liquid is applied to the surface of the element with a brush to a thickness of 0.6 mm. When the resin was left to stand for a while, the resin was cured, and the density of the quartz powder in the cured resin was higher as it was closer to the element surface. Next, fluid dip coating was applied to this substrate using an epoxy powder bowl 256 (manufactured by Somar Kogyo Co., Ltd.) using a known conventional technique to form a coating film with a thickness of about 1 mm (
A second protective layer) was formed. For comparison, a hybrid IC without the first protective layer was similarly fluid-dip coated.
このようにして得られた2種類のハイブリツドICの樹
脂パツケージ品、各10コについて−40℃〜150℃
のヒートサイクルテストを行つた結果、第1の保護層を
設けないものは10コ中7コが1サイクル以下でワレが
発生し、ワレのない3コも素子の特性変化による致命不
良であつた。-40°C to 150°C for each of the 10 resin packaged hybrid ICs thus obtained.
As a result of a heat cycle test, 7 out of 10 devices without the first protective layer developed cracks within one cycle, and the 3 devices without cracks were fatally defective due to changes in the characteristics of the element. .
これに対しこの発明によるハイブリツドICは、200
サイクル後も、ワレや素子の特性変化がなく良好なもの
であつた。実施例 2
アルミナ磁器の表面に形成されたコンデンサーIC、ダ
イオード、薄膜抵抗、導体よりなるハイブリツドICの
素子上にポリシン/ボライト(日本ゼオンK.K)より
なる二液性ポリウレタン樹脂を約0.4mmの厚さに塗
布し、あらかじめ8『Cに加熱しておいた30〜60メ
ツシユの石英粉末をふりかけポリウレタン樹脂膜上に石
英が出る程度にした。On the other hand, the hybrid IC according to this invention has 200
Even after cycling, the device remained in good condition with no cracks or changes in device characteristics. Example 2 Two-component polyurethane resin made of Polysyn/Borite (Nippon Zeon K.K.) was applied to a thickness of about 0.4 mm on the elements of a hybrid IC consisting of a capacitor IC, diode, thin film resistor, and conductor formed on the surface of alumina porcelain. 30 to 60 mesh of quartz powder, which had been previously heated to 8°C, was sprinkled on the polyurethane resin film to a thickness such that quartz was exposed on the polyurethane resin film.
ふりかけられた石英は素子の上に沈でんし、ポリウレタ
ンと石英の樹脂層ができた。厚さは約0.8mmであつ
た。これを室温で2時間放置するとポリウレタンが硬化
した。このハイブリツドICを上記実施例1と同様にエ
ポキシ粉末F256(ソーマル工業社製)により流動浸
せき塗装し約0.5mmの厚さの塗膜を形成させた。比
較のために無処理の同一のハイブリツドICをエポキシ
粉末F256で約0.5mm厚さと1.3m!厚さの流
動浸せき塗装したハイブリツドICを製作した。上記の
ようにして作成された各々10コの樹脂パツケージ品を
準備し、−4『C〜150℃のヒートサイクルテストを
実施した結果、本発明のハイブリツドICは200サイ
クル後もワレおよび電気特性の不良発生がなかつたが、
本発明の処理の施してない約0.5龍パツケージ品およ
び1.3mmパツケージ品ともにすべて10サイクル以
下でワレまたは、電気特性不良を起した。以上の結果よ
り明らかなように本発明の方式によるパツケージ品は特
にヒートサイクルに強い良好な性能のものであつた。The sprinkled quartz settled on top of the element, creating a resin layer of polyurethane and quartz. The thickness was approximately 0.8 mm. When this was left at room temperature for 2 hours, the polyurethane was cured. This hybrid IC was fluid-dip coated with epoxy powder F256 (manufactured by Somar Kogyo Co., Ltd.) in the same manner as in Example 1 to form a coating film with a thickness of about 0.5 mm. For comparison, the same untreated hybrid IC was made with epoxy powder F256 to a thickness of about 0.5 mm and 1.3 m! A hybrid IC coated with thick fluidized dip coating was manufactured. As a result of preparing 10 resin package products each made as described above and conducting a heat cycle test from -4'C to 150°C, the hybrid IC of the present invention exhibited no cracking and no electrical characteristics even after 200 cycles. Although there were no defects,
Both the approximately 0.5 mm package product and the 1.3 mm package product that were not subjected to the treatment of the present invention cracked or had poor electrical characteristics after 10 cycles or less. As is clear from the above results, the package product according to the method of the present invention was particularly resistant to heat cycles and had good performance.
なお、第1及び第2の方法に限定されるものでないこと
は勿論であるが、これらの方法はいずれも簡単であるか
ら量産・自動化に適し、また安価でもある。Note that, of course, the method is not limited to the first and second methods, but all of these methods are simple and suitable for mass production and automation, and are also inexpensive.
また、第1の保護層は、ハイブリツドICなどの電子部
品類の場合には基板上に形成された素子の部品をカバー
していれば十分であるが、勿論裏面を含めた全面に設け
ても差支えない。Furthermore, in the case of electronic components such as hybrid ICs, it is sufficient for the first protective layer to cover the parts of the elements formed on the substrate, but it is of course possible to provide the first protective layer over the entire surface including the back surface. No problem.
ところで上記説明では本発明を主に電子部品類の樹脂パ
ツケージに利用する場合について述べたがこれに限定さ
れないことは勿論であり例えば精密機械部品など他の物
品のパツケージにも利用できることはいうまでもない。By the way, in the above explanation, the present invention was mainly applied to resin packages for electronic parts, but it goes without saying that the present invention is not limited to this, and can also be used for packages for other articles such as precision machine parts. do not have.
以上説明した通り、この発明によれば無公害で材料ロス
をなくし、特に冷熱のヒートサイクルに強いパツケージ
品を得ることができるという効果があり、とくに第1保
護層中の充填剤が単に該保護層中に平均的に分散されて
いるものとは異なり、被パツケージ表面側に近づくほど
充填剤濃度が高く、換言すれば熱膨張係数が低くなつて
いるため、上記ヒートサイクルによる上記第1保護層の
ワレ、とくに被パツケージ側でのワレをの発生をいつそ
う確実に防止できる利点がある。As explained above, according to the present invention, it is possible to obtain a package product that is pollution-free, eliminates material loss, and is particularly resistant to cold and heat heat cycles. Unlike the filler that is dispersed evenly in the layer, the closer it gets to the surface of the package, the higher the filler concentration, in other words, the lower the coefficient of thermal expansion. This has the advantage of being able to reliably prevent cracking, especially on the side of the packaged cage.
Claims (1)
するほど無機質充填剤濃度の高い第1の樹脂保護層およ
びこの第1の保護層を囲繞する如く形成された第2の樹
脂保護層を備えたことを特徴とする樹脂パッケージ方式
。 2 被パッケージ物が電子部品である特許請求の範囲第
1項記載の樹脂パッケージ方式。 3 電子部品が、基板とこの基板上に形成された回路素
子からなる特許請求の範囲第2項記載の樹脂パッケージ
方式。[Scope of Claims] 1. A first resin protective layer formed on the surface of the object to be packaged, the concentration of which is higher in inorganic filler as it approaches the surface, and a second resin protective layer formed to surround the first protective layer. A resin packaging method characterized by a resin protective layer. 2. The resin packaging method according to claim 1, wherein the object to be packaged is an electronic component. 3. The resin packaging method according to claim 2, wherein the electronic component comprises a substrate and a circuit element formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15026777A JPS596512B2 (en) | 1977-12-13 | 1977-12-13 | Resin package method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15026777A JPS596512B2 (en) | 1977-12-13 | 1977-12-13 | Resin package method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5481778A JPS5481778A (en) | 1979-06-29 |
| JPS596512B2 true JPS596512B2 (en) | 1984-02-13 |
Family
ID=15493196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15026777A Expired JPS596512B2 (en) | 1977-12-13 | 1977-12-13 | Resin package method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS596512B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5849935B2 (en) * | 2012-11-27 | 2016-02-03 | トヨタ自動車株式会社 | Semiconductor device and manufacturing method of semiconductor device |
-
1977
- 1977-12-13 JP JP15026777A patent/JPS596512B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5481778A (en) | 1979-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6234920A (en) | Epoxy resin composition and resin-encapsulated semiconductor device produced by using same | |
| JPH03177450A (en) | Epoxy resin composition for semiconductor and production of semiconductor device | |
| KR0157844B1 (en) | Resin-sealed semiconductor device and manufacturing method | |
| EP0119607B2 (en) | Zinc oxide in poly(arylene sulfide) composition | |
| DE2656139A1 (en) | COMPOSITION FOR THE PRODUCTION OF A HERMETICALLY SEALING COVER ON ELECTRONIC CIRCUITS | |
| RU2002120489A (en) | METHOD FOR PRODUCING INSULATION FOR ELECTRICAL CONDUCTORS BY APPLICATION OF POWDER COATING | |
| US3975757A (en) | Molded electrical device | |
| JPS596512B2 (en) | Resin package method | |
| US4740425A (en) | Zinc oxide in poly(arylene sulfide) compositions | |
| JPH0657740B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPS6036527A (en) | Sealing resin composition | |
| JPH01101363A (en) | Epoxy resin composition and semiconductor device using said resin composition | |
| JP3347228B2 (en) | Semiconductor device | |
| JPS5999748A (en) | Resin sealed type semiconductor device | |
| JPS63179920A (en) | Epoxy resin composition and resin-sealed type semiconductor device using said composition | |
| JPS603188A (en) | Method of producing hybrid integrated circuit board | |
| JPH02855B2 (en) | ||
| JPS6281446A (en) | Epoxy resin composition | |
| JPH0455483A (en) | Heat-resistant and insulating varnish composition and method for forming a film using the same | |
| JP3008981B2 (en) | Epoxy resin composition | |
| JPH0286648A (en) | Epoxy resin composition for semiconductor sealing | |
| JPH07118505A (en) | Epoxy resin composition | |
| JPS62115849A (en) | Resin-sealed semiconductor device | |
| JPH08245753A (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JPS60188418A (en) | Epoxy resin composition and semiconductor device sealed therewith |