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JPS597182B2 - Rotating anode for X-ray tube - Google Patents
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JPS597182B2 - Rotating anode for X-ray tube - Google Patents

Rotating anode for X-ray tube

Info

Publication number
JPS597182B2
JPS597182B2 JP13675680A JP13675680A JPS597182B2 JP S597182 B2 JPS597182 B2 JP S597182B2 JP 13675680 A JP13675680 A JP 13675680A JP 13675680 A JP13675680 A JP 13675680A JP S597182 B2 JPS597182 B2 JP S597182B2
Authority
JP
Japan
Prior art keywords
rhenium
thickness
plate
rotating anode
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13675680A
Other languages
Japanese (ja)
Other versions
JPS5763754A (en
Inventor
英雄 小泉
由雄 福原
博幸 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP13675680A priority Critical patent/JPS597182B2/en
Publication of JPS5763754A publication Critical patent/JPS5763754A/en
Publication of JPS597182B2 publication Critical patent/JPS597182B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08Anodes; Anti cathodes
    • H01J35/10Rotary anodes; Arrangements for rotating anodes; Cooling rotary anodes
    • H01J35/108Substrates for and bonding of emissive target, e.g. composite structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/08Targets (anodes) and X-ray converters
    • H01J2235/083Bonding or fixing with the support or substrate
    • H01J2235/084Target-substrate interlayers or structures, e.g. to control or prevent diffusion or improve adhesion

Description

【発明の詳細な説明】 本発明は、X線管用回転陽極、更に詳しくは黒鉛基体か
らターゲット板へ炭素の拡散を防止するに有効なレニウ
ム層を備えたX線管用回転陽極に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a rotating anode for an X-ray tube, and more particularly to a rotating anode for an X-ray tube having a rhenium layer effective in preventing diffusion of carbon from a graphite substrate to a target plate.

熱容量が大きく、大きなX線出力の得られるX線管用回
転陽極は、医療分野において広く用いられている。
Rotating anodes for X-ray tubes, which have a large heat capacity and provide a large X-ray output, are widely used in the medical field.

従来、回転陽極は照射される電子ビームの熱衝撃に耐え
、かつX線発生効率のよい密度および融点が高く原子番
号の大きい金属、例えばタングステンあるいはタングス
テン合金などによって構成されてきた。
Conventionally, the rotating anode has been made of a metal such as tungsten or a tungsten alloy, which can withstand the thermal shock of the irradiated electron beam and has a high density, high melting point, and high atomic number, and is efficient in generating X-rays.

あるいは、他に、タングステン板の背面に熱吸収体とし
て比較的厚いモリブデンの板を一体的に接合した複合板
も仰られている。
Alternatively, there is also a composite plate in which a relatively thick molybdenum plate is integrally bonded to the back surface of a tungsten plate as a heat absorber.

しかしながら、近時X線技術の萬歩に伴い、連続負荷あ
るいは瞬間的な高負荷入力に耐え得るようなさらに熱容
量の大きい回転陽極が強く求められている。
However, with the recent advances in X-ray technology, there is a strong demand for a rotating anode with a larger heat capacity that can withstand continuous load or instantaneous high load input.

最近、この要求に応じて、比重が小さく熱放射能力にす
ぐれる黒鉛材を基体と賦 この上にターゲット板として
タングステン板あるいはタングステンとモリブデンの複
合板を一体的に接合した構造の回転陽極が開発されてい
る。
Recently, in response to this demand, a rotating anode has been developed that has a structure in which a graphite material with low specific gravity and excellent heat radiation ability is used as a base material, and a tungsten plate or a composite plate of tungsten and molybdenum is integrally bonded to this base as a target plate. has been done.

しかしながら、この回転陽極においては、照射される電
子ビームによって上記ターゲット板が、その表面で約2
500〜2600℃に発熱し、しだがって該ターゲット
板と黒鉛基体の接合部も高温となり、該接合部の温度が
1300℃以上になると、該黒鉛基体の炭素が上部のタ
ーゲット板へ拡散し、該接合部に例えばタングステンカ
ーバイドのようなカーバイド層が形成される。
However, in this rotating anode, the target plate is approximately 2
Heat is generated to 500 to 2,600°C, and therefore the joint between the target plate and the graphite base also becomes high temperature. When the temperature of the joint reaches 1,300°C or higher, carbon in the graphite base diffuses into the upper target plate. , a carbide layer, such as tungsten carbide, is formed at the junction.

該カーバイド層は機械的に脆く、回転陽極の高速回転時
の振動等の外的な力によって破損することがある。
The carbide layer is mechanically fragile and may be damaged by external forces such as vibrations during high speed rotation of the rotating anode.

その結果、ターゲット板と黒鉛基体の接合部の部分的な
剥離あるいはそれに基づく熱伝導の不均一化と部分的な
異常発熱などの不都合な事態をしばしば招く。
As a result, inconvenient situations such as partial separation of the joint between the target plate and the graphite substrate, uneven heat conduction, and local abnormal heat generation are often caused.

このため、従来、該黒鉛基体とターゲット板の間に、炭
素とはカーバイドを形成せずかつ炭素のターゲット板へ
の拡散を防止するレニウム層を、例えばレニウム金属の
粉末と水あるいは有機バインダとから成るスラリーを黒
鉛基体の表面に塗布したりあるいは黒鉛基体の表面にレ
ニウムをCVD法で沈着せしめたりして形成することが
行なわれている。
For this reason, conventionally, between the graphite substrate and the target plate, a rhenium layer, which does not form carbide with carbon and prevents carbon from diffusing into the target plate, is used, for example, in a slurry consisting of rhenium metal powder and water or an organic binder. Rhenium is formed by coating the surface of a graphite substrate or by depositing rhenium on the surface of a graphite substrate by a CVD method.

上記のような方法で形成されたレニウム層はそれなりの
効果を奏するものの組織構造的には緻密組織ではないの
で黒鉛基体からターゲット板への炭素の拡散を充分に防
止し得ない場合かある。
Although the rhenium layer formed by the above method has certain effects, it does not have a dense structure, so it may not be able to sufficiently prevent the diffusion of carbon from the graphite substrate to the target plate.

本発明者らは、このような難点を解消するために鋭意研
究を重ねた結果、レニウム層として加工されて緻密なレ
ニウム箔、特に加工率85%以上のレニウム箔を用いる
と炭素の拡散が充分に防止し得るという知見を得、本発
明を完成するに到った。
The inventors of the present invention have conducted extensive research in order to resolve these difficulties, and have found that carbon diffusion is sufficient when using dense rhenium foil processed as a rhenium layer, especially rhenium foil with a processing rate of 85% or more. The present invention was completed based on the knowledge that this can be prevented.

本発明は、ターゲット板にカーバイド層を形成すること
の少ない改良されたX線管用回転陽極を提供することを
目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide an improved rotating anode for an X-ray tube that is less likely to form a carbide layer on a target plate.

すなわち、本発明の回転陽極は、黒鉛基体とターゲット
板の間にレニウム層を介在させた一体的構造のX線管用
回転陽極において、該レニウム層が粉末焼結体を加工し
たもの特に加工率85%以上のレニウム箔であることを
特徴とするものである。
That is, the rotating anode of the present invention is a rotating anode for an X-ray tube having an integral structure in which a rhenium layer is interposed between a graphite base and a target plate, and the rhenium layer is formed by processing a powder sintered body, especially one with a processing rate of 85% or more. It is characterized by being made of rhenium foil.

本発明回転陽極には、加工率85係以上の緻密な組織構
造のレニウム箔が用いられる。
The rotating anode of the present invention uses a rhenium foil having a dense structure with a processing rate of 85 factors or higher.

ここでいう加工率とは、後述するレニウム焼結体を熱間
加工(鍛造及び圧延)しレニウムの金属箔を形成する際
に、焼結体の厚みをt1 レニウム箔の厚みをt′とす
ると、t−t’ /tX1 00で算出される値をいう
The processing rate here means that when forming a rhenium metal foil by hot working (forging and rolling) a rhenium sintered body, which will be described later, the thickness of the sintered body is t1 and the thickness of the rhenium foil is t'. , t-t'/tX1 00.

この加工率は、レニウムの結晶粒の扁平な組織構造化の
度合および組織構造の緻密化の度合を表示するものであ
る。
This processing rate indicates the degree of flat structure of rhenium crystal grains and the degree of densification of the structure.

該加工率が大きくなると、レニウム箔の組織構造が緻密
化するとともに、各結晶粒界が複雑にいり組みあうため
、例えばその厚み方向への炭素の拡散に対しては良好な
防壁の働きを示すようになるものと考えられる。
As the processing rate increases, the structure of the rhenium foil becomes denser, and the grain boundaries intertwine in a complicated manner, so it acts as a good barrier against the diffusion of carbon in the thickness direction, for example. It is thought that this will happen.

本発明においてレニウム箔の加工率が85チ未満の場合
には、炭素の拡散を充分に防止することが難しい。
In the present invention, if the processing rate of the rhenium foil is less than 85 inches, it is difficult to sufficiently prevent carbon diffusion.

また、加工率の上限は特にないが、実際に製造できるレ
ニウム箔の厚さは5μm程度に留まる。
Further, although there is no particular upper limit to the processing rate, the thickness of rhenium foil that can actually be manufactured remains at about 5 μm.

なお、レニウム箔の厚さを調整するには電解研摩等を用
いることもできる。
Note that electrolytic polishing or the like can also be used to adjust the thickness of the rhenium foil.

レニウム箔の加工率が炭化物生成状態に影響を及ぼす理
由は定かではないが、組織の緻密度合および結晶粒の状
態が効いてくるものと考えられる。
Although it is not clear why the processing rate of the rhenium foil affects the state of carbide formation, it is thought that the density of the structure and the state of the crystal grains have an effect.

用いるレニウム箔の厚みは、該レニウム箔の加工率との
関係で選定すればよいが、5〜400μmのものが好ま
しい。
The thickness of the rhenium foil used may be selected in relation to the processing rate of the rhenium foil, but is preferably 5 to 400 μm.

レニウム箔の厚みが5μm未満のものは製造が困難であ
る上にカーバイド層生成阻止の効果が小さく、また40
0μmを超えるとターゲット表面から黒鉛基体への速や
かな熱伝導を妨げる。
Rhenium foils with a thickness of less than 5 μm are difficult to manufacture and are less effective in preventing the formation of a carbide layer;
If it exceeds 0 μm, rapid heat conduction from the target surface to the graphite substrate will be hindered.

レニウム層の存在効果及び製造容易さとの関係から考え
るとその厚みは10〜200μmにあることがより好ま
しい。
Considering the effect of the presence of the rhenium layer and the relationship with ease of manufacture, it is more preferable that the thickness is 10 to 200 μm.

このようなレニウム箔は例えば次のようにして作製され
る。
Such rhenium foil is produced, for example, as follows.

まず、粒径1〜3μmのレニウムの粉末を、室温下で所
定の金型内に充填して約1. 5 ton / cwi
で圧縮予備成形した後、得られた圧粉体を例えば水を圧
力媒体とするアイソスタチツクプレスで約2ton/c
iで等方圧縮成形して成形体を形成する。
First, rhenium powder with a particle size of 1 to 3 μm is filled into a predetermined mold at room temperature. 5 tons/cwi
After compression preforming with
A molded body is formed by isostatic compression molding at i.

ついで、この成形体を例えば10−5〜1o−6Tor
rの真空炉中で2300〜2400℃の温度で焼き固め
て焼結体を得る。
Then, this molded body is heated to, for example, 10-5 to 1o-6 Torr.
A sintered body is obtained by baking and solidifying in a vacuum furnace at a temperature of 2,300 to 2,400°C.

更に、この焼結体を1600〜1800℃の温度下で熱
間鍛造しレニウム箔を形成する。
Furthermore, this sintered body is hot forged at a temperature of 1600 to 1800°C to form a rhenium foil.

通常、この段階では約2mmのレニウム箔か得られる。Usually about 2 mm of rhenium foil is obtained at this stage.

ついで、このレニウム箔を1600〜1800℃の温度
下で約1wnの厚みにまで熱間圧延した後、最後に冷間
圧延し用いる厚みのレニウム箔を得る。
Next, this rhenium foil is hot rolled at a temperature of 1,600 to 1,800° C. to a thickness of about 1 wn, and finally cold rolled to obtain a rhenium foil of the thickness used.

このとき、加工率85%以上のレニウム箔においては、
最終の段階での比重は20以上のものが得られる。
At this time, for rhenium foil with a processing rate of 85% or more,
A specific gravity of 20 or more can be obtained at the final stage.

本発明の回転陽極において、ターゲット板は、タングス
テン板あるいはタングステン板の背面に所定厚みのモリ
ブデン板を例えば熱圧プレスして成る複合板のいずれか
であるが、黒鉛基体との接合面におけるカーバイド層の
形成を防止する意味からすれば熱吸収体であるモリブデ
ン板との複合板であることが好ましい。
In the rotating anode of the present invention, the target plate is either a tungsten plate or a composite plate formed by hot-pressing a molybdenum plate of a predetermined thickness on the back surface of a tungsten plate, but the carbide layer at the joint surface with the graphite substrate is A composite board with a molybdenum board, which is a heat absorber, is preferable in order to prevent the formation of.

以下に本発明の回転陽極を実施例に基づいて説明する。The rotating anode of the present invention will be explained below based on examples.

実施例 1)ターゲット板の作製 常法により作製した直径130mm厚み2.5mmのタ
ングステン板と直径130調厚み15rrrmのモリブ
デン板を用意した。
Example 1) Preparation of Target Plate A tungsten plate with a diameter of 130 mm and a thickness of 2.5 mm and a molybdenum plate with a diameter of 130 mm and a thickness of 15 rrrm were prepared by a conventional method.

該モリブデン板の上に該タングステン板を載置し、水素
雰囲気中で1600’C、2 5 0@/crAで熱圧
プレスした。
The tungsten plate was placed on the molybdenum plate and hot-pressed at 1600'C and 250@/crA in a hydrogen atmosphere.

タングステン板とモリブデン板が一体的に接合した後、
モリブデン板の下面に平滑化加工を施こして複合ターゲ
ット板が得られた。
After the tungsten plate and molybdenum plate are integrally joined,
A composite target plate was obtained by smoothing the lower surface of the molybdenum plate.

2)レニウム箔の調製 前記の製法に基づき、たて100咽幅50wm厚み2m
mの焼結体を4個作製した。
2) Preparation of rhenium foil Based on the above manufacturing method, length: 100 mm, width: 50 w, thickness: 2 m
Four sintered bodies of m were produced.

これらをそれぞれ1700〜1900℃の温度下で熱間
鍛造し、更に1700℃で熱間圧延した後冷間圧延して
加工率75係(厚み0. 5 rrrm )、80φ(
厚み0. 4 rran )、85%(厚み0. 3
trrm )、90%(厚み0. 2 mm )、95
係(厚み0. 1 rran )及び9 7. 5 %
(厚み0. 0 58 )の6種類のレニウム箔を調
製した。
Each of these was hot forged at a temperature of 1700 to 1900°C, further hot rolled at 1700°C, and then cold rolled to obtain a working ratio of 75 (thickness 0.5 rrrm) and 80φ (
Thickness 0. 4 rran), 85% (thickness 0.3
trrm ), 90% (thickness 0.2 mm), 95
(thickness 0.1 rran) and 9 7. 5%
Six types of rhenium foils (thickness: 0.058 mm) were prepared.

3)回転陽極の作製 上記1)、2)で得たターゲット板とレニウム箔を重ね
あわせ、1600℃水素t囲気中で、2 5 0 kq
/crrfの圧力を印加し約1時間その状態を保持した
3) Preparation of rotating anode The target plate obtained in 1) and 2) above and the rhenium foil were stacked together and heated to 250 kq in a hydrogen atmosphere at 1600°C.
A pressure of /crrf was applied and this state was maintained for about 1 hour.

最後に、直径1 3 0rrrm厚み30rrrrnの
黒鉛基体の上に上述のターゲット板/レニウム箔複合体
を重ねて、全体を1400℃、窒素(不活性)査囲気下
でボロンナイトライド粉末を圧縮媒体として上下方向か
ら約200@/crAの圧力を印加し、約1時間その状
態を保持した。
Finally, the above-mentioned target plate/rhenium foil composite was layered on a graphite substrate with a diameter of 130rrrm and a thickness of 30rrrrrn, and the whole was heated at 1400°C under a nitrogen (inert) atmosphere with boron nitride powder as a compression medium. A pressure of about 200@/crA was applied from above and below, and this state was maintained for about 1 hour.

その結果全体が一体的に接合されていることを確認した
As a result, it was confirmed that the entire structure was integrally joined.

なお、比較のために、黒鉛基体の上に平均粒径1〜3μ
mのレニウムの粉末20L?(10ml)に有機バイン
ダ0.2S’を加えて成るスラリーを厚み約500μm
に均一に塗布し、バインダを加熱除去後その上に同様に
複合ターゲット板を接合した回転陽極を作製した。
For comparison, particles with an average particle size of 1 to 3 μm were placed on a graphite substrate.
20L of m rhenium powder? (10ml) and 0.2S' organic binder to a thickness of approximately 500μm.
After applying the binder uniformly to the binder and removing it by heating, a rotating anode was fabricated by similarly bonding a composite target plate thereon.

このようにして得られた各回転陽極を、10″Torr
の真空炉中で約1400℃の温度下に10時間放置した
Each rotating anode thus obtained was heated to 10" Torr.
The sample was left in a vacuum furnace at a temperature of about 1400° C. for 10 hours.

冷却後、回転陽極を取り出し、それぞれを垂直方向に切
断して接合面を露出せしめた。
After cooling, the rotating anodes were taken out and each was cut vertically to expose the bonding surface.

該切断面を顕微鏡観察し、モリブデン板に形成されたカ
ーバイド層の厚みを測定した。
The cut surface was observed under a microscope, and the thickness of the carbide layer formed on the molybdenum plate was measured.

それらの結果を加工率とカーバイド層の厚みの関係とし
て第1図に示した。
The results are shown in Figure 1 as a relationship between processing rate and carbide layer thickness.

なお比較のだめのターゲット板ではカーバイド層の厚さ
が不均一に厚く形成されていた。
In addition, in the comparison target plate, the thickness of the carbide layer was formed unevenly and thickly.

更にレニウム箔の厚さを200μmと一定のもので、加
工率が80%、85係、90%、95%と異なるものを
用意し、これらを用いて同様の条件で回転陽極を製作し
、前記と同様に処理した後、生成したカーバイド層の厚
みを調べた。
Furthermore, we prepared rhenium foils with a constant thickness of 200 μm and different processing rates of 80%, 85%, 90%, and 95%, and used these to manufacture rotating anodes under the same conditions. After processing in the same manner as above, the thickness of the produced carbide layer was examined.

その結果を、加工率と形成されたカーバイド層の厚みの
関係として第2図に示した。
The results are shown in FIG. 2 as a relationship between the processing rate and the thickness of the formed carbide layer.

第2図から明らかなようにカーバイド層の生成はレニウ
ム箔の加工率に大へく依存することか判明した。
As is clear from FIG. 2, the formation of the carbide layer was found to be highly dependent on the processing rate of the rhenium foil.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、レニウム箔の加工率とターゲット板に形成さ
れるカーバイド層の厚みとの関係曲線、第2図は、厚み
200μmのレニウム箔の加工率とターゲット板に形成
されるカーバイド層の厚みとの関係曲線を表わす。
Figure 1 shows the relationship curve between the processing rate of rhenium foil and the thickness of the carbide layer formed on the target plate, and Figure 2 shows the relationship between the processing rate of rhenium foil with a thickness of 200 μm and the thickness of the carbide layer formed on the target plate. represents the relationship curve.

Claims (1)

【特許請求の範囲】 1 黒鉛基体とターゲット板の間にレニウム層を介在さ
せた一体的構造のX線管用回転陽極において、該レニウ
ム層が粉末焼結体をD0エしたレニウム箔でなることを
特徴とするX線管用回転陽極。 2 該レニウム層が加工率85チ以上のレニウム箔であ
ることを特徴とする特許請求の範囲第1項記載のX線管
用回転陽極。 3 該レニウム箔の厚みが5〜400μmである特許請
求の範囲第1項又は第2項記載のX線管用回転陽極。 4 該ターゲット板が、タングステン板あるいはタング
ステン板にモリブデン板を一体的に接合して成る複合板
のいずれかである特許請求の範囲第1項から第3項のい
ずれかに記載のX線管用回転陽極。
[Claims] 1. A rotary anode for an X-ray tube having an integral structure in which a rhenium layer is interposed between a graphite base and a target plate, characterized in that the rhenium layer is made of rhenium foil obtained by do-ing the powder sintered body. A rotating anode for X-ray tubes. 2. The rotating anode for an X-ray tube according to claim 1, wherein the rhenium layer is a rhenium foil with a processing rate of 85 inches or more. 3. The rotating anode for an X-ray tube according to claim 1 or 2, wherein the rhenium foil has a thickness of 5 to 400 μm. 4. The rotating X-ray tube according to any one of claims 1 to 3, wherein the target plate is either a tungsten plate or a composite plate formed by integrally bonding a tungsten plate and a molybdenum plate. anode.
JP13675680A 1980-10-02 1980-10-02 Rotating anode for X-ray tube Expired JPS597182B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13675680A JPS597182B2 (en) 1980-10-02 1980-10-02 Rotating anode for X-ray tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13675680A JPS597182B2 (en) 1980-10-02 1980-10-02 Rotating anode for X-ray tube

Publications (2)

Publication Number Publication Date
JPS5763754A JPS5763754A (en) 1982-04-17
JPS597182B2 true JPS597182B2 (en) 1984-02-16

Family

ID=15182759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13675680A Expired JPS597182B2 (en) 1980-10-02 1980-10-02 Rotating anode for X-ray tube

Country Status (1)

Country Link
JP (1) JPS597182B2 (en)

Also Published As

Publication number Publication date
JPS5763754A (en) 1982-04-17

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