JPS598945B2 - electron beam shatter tube - Google Patents
electron beam shatter tubeInfo
- Publication number
- JPS598945B2 JPS598945B2 JP12925482A JP12925482A JPS598945B2 JP S598945 B2 JPS598945 B2 JP S598945B2 JP 12925482 A JP12925482 A JP 12925482A JP 12925482 A JP12925482 A JP 12925482A JP S598945 B2 JPS598945 B2 JP S598945B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- tube
- photocathode
- image
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/501—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output with an electrostatic electron optic system
- H01J31/502—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output with an electrostatic electron optic system with means to interrupt the beam, e.g. shutter for high speed photography
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】
本発明は、新規な電子ビームシャツタ装置を使用した電
子ビームシャツタ管に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam shutter tube using a novel electron beam shutter device.
高速で変化あるいは振動する被写体を撮像するためには
極めて短時間露光しなければならない。In order to image a subject that changes or vibrates at high speed, an extremely short exposure time is required.
写真撮影においては機械的手段で露光するが、光電子放
出効果を用いた光学像の変換をするイメージ管において
は、光電面に近接し、かつ平行に網状の電極を設け、通
常は光電面よりも高い電位に設定しておいて電子ビーム
像の通過を妨げ、所望の露出時刻に所望の時間幅だけ光
電面より高い電位を与えて上記所望の時刻光電面に投影
された光学像に対応する電子ビームをイメージ管の螢光
面に入射して上記光学像の映像を形成し、写真フイルム
に露光して記録するか、他のテレビジョン撮像して記録
する。In photography, exposure is performed by mechanical means, but in image tubes that convert optical images using the photoelectron emission effect, a net-like electrode is provided close to and parallel to the photocathode, and is usually located at a distance from the photocathode. Electrons corresponding to the optical image projected onto the photocathode at the desired time are set at a high potential to prevent the electron beam image from passing through, and a potential higher than the photocathode is applied for a desired time width at a desired exposure time. The beam is incident on the fluorescent surface of the image tube to form the above-mentioned optical image, which is then recorded by exposure to photographic film or by other television imaging.
また光電而と螢光面の間の電子ビーム像の通路を適当な
位置に上記通路に平行でかつ上記通路を挾む2枚の偏向
板からなる偏向電極を設け、通常は上記2枚の偏向板の
間に電圧を印加して電子ビーム像が螢光面に入射しない
ように偏向しておき所望の露出時刻に上記2枚の偏向板
の間の電圧を変化し、その電圧の変化の過程で上記2枚
の偏向板の電圧が小さくなったときに光直面に投影され
た光学像に対応する電子ビーム像をイメージ管の螢光面
に入射して上記光学像の映像を形成する。In addition, a deflection electrode consisting of two deflection plates parallel to and sandwiching the passage is provided at an appropriate position for the path of the electron beam image between the photoelectric layer and the fluorescent surface. A voltage is applied between the plates to deflect the electron beam image so that it does not enter the fluorescent surface, and at a desired exposure time, the voltage between the two deflection plates is changed, and in the process of changing the voltage, the two plates are When the voltage on the deflection plate becomes small, an electron beam image corresponding to the optical image projected onto the optical surface is incident on the fluorescent surface of the image tube to form an image of the optical image.
上述のような機能を有するイメージ管はシャツタ管と呼
ばれ、高速の現像を観測することができる。An image tube having the above-mentioned functions is called a Shasta tube, and is capable of observing high-speed development.
なお上述のような機能はイメージ部を有するテレビジョ
ン撮像Lたとえばイメージオルシコンなどでイメージ部
に網状電極または偏向電極を投げても同様な動作を行う
ことができる。The above-mentioned functions can also be performed in a television imaging device L having an image section, such as an image orthicon, by placing a mesh electrode or a deflection electrode on the image section.
以下にイメージ管型のシャツタ管を例にあげ、従来のシ
ャツタ管の構造と動作およびその欠点を説明する。The structure and operation of a conventional Shatta tube, as well as its drawbacks, will be explained below using an image tube type Shatta tube as an example.
イメージオルシコン管型のシャツタ管においてもシャツ
タ管としての機能を有する部分の構造と動作は全く同じ
であり、イメージオルシコン管型のシャツタ管は以下に
述べるイメージ管型のンヤツタ管の螢光面に代えて蓄積
管ターゲツトを設け、さらにイメージオルシコン管に本
来備わっている電子ビーム操作による読出し機能を有す
る部分が接続されているものである。The structure and operation of the part that functions as a Shasta tube in the image orthicon tube type Shasta tube is exactly the same, and the image orthicon tube type Shasta tube has the fluorescent surface of the image tube type Nyatsuta tube described below. A storage tube target is provided in place of the image orthicon tube, and a portion of the image orthicon tube having a readout function based on electron beam operation is connected thereto.
第1図は従来のイメージ管型のシャツタ管の一例を示す
断面構造および電源の接続を示す図である。FIG. 1 is a diagram showing the cross-sectional structure and power supply connection of an example of a conventional image tube-type shutter tube.
第1図において1はシャツタ管、11はシャツタ管1の
有底円筒状の真空容器、12は真空気密容器11の第1
の底面に設けた光の入射窓、13は光の入射窓12の内
壁に形成した光電面、14は光電面13に近接して平行
に設けられた網状の電極、15は真空気密容器11と同
軸かつ回転対象の集束電極、16は螢光面で真空気密容
器11の第2の底面に設けた光の射出窓ITの内壁に形
成してある。In FIG. 1, 1 is a Shatta tube, 11 is a bottomed cylindrical vacuum vessel of the Shasta tube 1, and 12 is a first vacuum-tight vessel of the vacuum-tight vessel 11.
13 is a photocathode formed on the inner wall of the light incidence window 12; 14 is a mesh electrode provided in parallel to the photocathode 13; 15 is a vacuum-tight container 11; A coaxial and rotationally symmetrical focusing electrode 16 with a fluorescent surface is formed on the inner wall of the light exit window IT provided on the second bottom surface of the vacuum-tight container 11.
螢光面16は直流電源18の正電極に、光電面13は上
記直流電源の負電極と直流電源19の正電極の接続点に
接続してあり、網状の電極14は抵抗20を介して上記
直流電源19の負電極に接続してある。The fluorescent surface 16 is connected to the positive electrode of the DC power source 18, the photocathode 13 is connected to the connection point between the negative electrode of the DC power source 19 and the positive electrode of the DC power source 19, and the mesh electrode 14 is connected to the positive electrode of the DC power source 18 through the resistor 20. It is connected to the negative electrode of the DC power supply 19.
また網状の電極14はキャパシタ21を介シて矩形波パ
ルス電源22に接続してある。Further, the mesh electrode 14 is connected to a rectangular wave pulse power source 22 via a capacitor 21.
電源18の出力電圧は十分な収束効果を得るために光電
面13と集束電極150間に数キロボルトを加える必要
があり、螢光面の電位は上記集束電極よりさらに数キロ
ボルト高くなければならないと共に電子の初速度の分散
および空間電荷による光電子流の制限による螢光面16
への到達時間および横方向への拡がりによって生ずる映
像のぼけを減ずる必要上数キロボルトから十数キロボル
ト必要である。The output voltage of the power source 18 needs to be several kilovolts between the photocathode 13 and the focusing electrode 150 to obtain a sufficient focusing effect, and the potential of the fluorescent surface must be several kilovolts higher than the focusing electrode, and the electron Fluorescent surface 16 due to initial velocity dispersion and limitation of photoelectron flow due to space charge.
Several kilovolts to more than ten kilovolts are necessary to reduce blurring of the image caused by the arrival time and lateral spread.
電源19の出力電圧は光電面13と螢光面16の間の電
圧にもかかわらす光電面13から放出した光電子の通過
を妨げ得るために約30ボルト必要である。The output voltage of power supply 19 is required to be approximately 30 volts in order to be able to prevent the passage of photoelectrons emitted from photocathode 13 despite the voltage between photocathode 13 and phosphor surface 16 .
従って通常光電面13から放出した電子ビームは網状の
電極14によって遮られ螢光面16に到達しないから映
像を生じない。Therefore, normally, the electron beam emitted from the photocathode 13 is blocked by the net-like electrode 14 and does not reach the fluorescent surface 16, so that no image is generated.
このような状態にあるとき、矩形波パルス電源22から
正の矩形波パルスを入力すれば網状の冒極14は上記矩
形波パルスの期間だけ正電位になり、電子ビーム像が上
記矩形波パルスの期間に網状の電極を通過し、螢光而1
6に映像奪生ずる。In such a state, if a positive square wave pulse is input from the square wave pulse power source 22, the net-like negative electrode 14 becomes at a positive potential only during the period of the square wave pulse, and the electron beam image becomes the same as that of the square wave pulse. During the period, the fluorescent light passes through the mesh electrode.
The image is captured in 6.
この矩形波パルスは電子ビーム像の集束条件を満足する
ために電源19の出力電.圧より十分大きくなくてはな
らず、約’300ないし2000ボルトである。This rectangular wave pulse is applied to the output voltage of the power source 19 in order to satisfy the focusing conditions of the electron beam image. The voltage must be significantly greater than the voltage, approximately '300 to 2000 volts.
ところで超高速で変化する被写体を撮像するときはそれ
に応じて上記矩形波パルスの幅を狭くしなければならな
いが、5ナノ秒程度より短い矩形波パルスを発生し、網
状電極14K印加することはパルスの発生技術、網状電
極の有する容量および網状電極と伝送ケーブルとのイン
ピーダンス整合などに問題があり極めて困難である。By the way, when imaging a subject that changes at an extremely high speed, the width of the above-mentioned square wave pulse must be narrowed accordingly, but it is not possible to generate a square wave pulse shorter than about 5 nanoseconds and apply 14K to the mesh electrode. This is extremely difficult due to problems with the generation technology, the capacitance of the mesh electrode, and the impedance matching between the mesh electrode and the transmission cable.
第2図は、従来のイメージ管型のシャッタ管の他の例を
示す断面構造および電源の接続を示す図である。FIG. 2 is a diagram showing the cross-sectional structure and power supply connection of another example of a conventional image tube type shutter tube.
第2図において3はシャッタ管、31はシャツタ管3の
有底円筒状の真空気密容器、32は真空気密容器31の
第1の底面に設けた光の入射窓、33は光の入射窓32
の内壁に形成した光電面、34は光電面33に近接して
平行に設けられた網状の電極、35は真空気密容器31
と同軸かつ回転対称の集束電極、36は螢光面で真空気
密容器31の第2の底面に設けた光の出射窓3Tの内壁
に形成してある。In FIG. 2, 3 is a shutter tube, 31 is a bottomed cylindrical vacuum-tight container of the shutter tube 3, 32 is a light entrance window provided on the first bottom surface of the vacuum-tight container 31, and 33 is a light entrance window 32.
34 is a net-like electrode provided close to and parallel to the photocathode 33; 35 is a vacuum-tight container 31;
A focusing electrode 36, which is coaxial and rotationally symmetrical, is a fluorescent surface and is formed on the inner wall of the light exit window 3T provided on the second bottom surface of the vacuum-tight container 31.
38は陽極板で中央にアパーチャが設けてある。38 is an anode plate with an aperture provided in the center.
39および40は電子ビーム像の通路に平行でかつ上記
通路を挾む2枚の偏向板であってその2枚を組合せて第
1の偏向電極を構成する。Reference numerals 39 and 40 denote two deflection plates parallel to and sandwiching the path of the electron beam image, and the two plates are combined to form a first deflection electrode.
41および42も電子ビーム像の通路に平行でかつ上記
電子ビーム像の通路を挾む2枚の偏向板であってその2
枚を組合せて第2の偏向電極を構成する。41 and 42 are also two deflection plates parallel to the path of the electron beam image and sandwiching the path of the electron beam image.
The second deflection electrode is configured by combining the sheets.
43は第1の偏向電極と第2の偏向電極の間に設けたア
パーチャ板である。43 is an aperture plate provided between the first deflection electrode and the second deflection electrode.
電源45および46Kよって光電面33と陽極板38の
間に約16キロボルトを印加してあり、電源44によっ
て陽極板38と螢光面36の間にOないし1キロボルト
を印加してあり、電源46によって光電面33と網状の
電極34の間には1ないし2キロボルトを印加してある
。Approximately 16 kilovolts are applied between the photocathode 33 and the anode plate 38 by the power supplies 45 and 46K, O to 1 kilovolt is applied between the anode plate 38 and the fluorescent surface 36 by the power supply 44, and the power supply 46 Accordingly, 1 to 2 kilovolts is applied between the photocathode 33 and the mesh electrode 34.
さらにアパーチャ板43は陽極板38と同じ電位が与え
られており、偏向板40は抵抗47を介して、偏向板4
1は抵抗48を介して電,源49の正電極に接続してあ
る。Further, the aperture plate 43 is given the same potential as the anode plate 38, and the deflection plate 40 is connected to the deflection plate 40 via a resistor 47.
1 is connected to the positive electrode of a power source 49 via a resistor 48.
電極49は約2KVの電圧を供給する。さらに偏向板4
0はキャパシタ51を介して、偏向板41はキャパシタ
52を介して高速ランプ電圧発生器50の出力端に接続
してある。Electrode 49 supplies a voltage of approximately 2KV. Furthermore, the deflection plate 4
0 is connected to the output terminal of a high-speed ramp voltage generator 50 via a capacitor 51, and the deflection plate 41 is connected via a capacitor 52.
なお陽極板38、偏向板39、偏向板42、アパーチャ
板43および電源49の負電極は接地されている。Note that the anode plate 38, the deflection plate 39, the deflection plate 42, the aperture plate 43, and the negative electrode of the power source 49 are grounded.
従って高速ランプ電圧発生器50が電圧の変化を開始す
る前は電子ビーム像は偏向板40の方向へ引張られ、ア
パーチャ板43K衝突するから螢光面36に映像が生じ
ない。Therefore, before the high-speed ramp voltage generator 50 starts changing the voltage, the electron beam image is pulled toward the deflection plate 40 and collides with the aperture plate 43K, so that no image is generated on the fluorescent surface 36.
このような状態にあるときランプ電圧発生器50が負の
方向にランプ電圧の変化を開始すると、電子ビームは掃
引され、偏向板39と偏向板40および偏向板41と偏
向板42がほぼ同電位になったとき螢光面に映像が生ず
る。In this state, when the lamp voltage generator 50 starts changing the lamp voltage in the negative direction, the electron beam is swept, and the deflection plates 39 and 40 and the deflection plates 41 and 42 are at almost the same potential. When this happens, an image appears on the fluorescent surface.
なお掃引速度が極めて速く第1の偏向電極を通過した電
子ビーム像が第2の偏向電極へ達したとき既に偏向板4
1と偏向板42との間の電圧がOの状態を経て反転する
ような場合には偏向板41に加えるランプ電圧は偏向板
40に加えるランプ電圧より適当な時間だけ遅延させる
必要がある。Note that when the sweep speed is extremely high and the electron beam image that has passed through the first deflection electrode reaches the second deflection electrode, the deflection plate 4 is already
In the case where the voltage between the deflection plate 41 and the deflection plate 42 is reversed after passing through the O state, the lamp voltage applied to the deflection plate 41 needs to be delayed by an appropriate amount of time compared to the lamp voltage applied to the deflection plate 40.
このようなランプ電圧はあらかじめ高電圧で充電してあ
ったキャパシタを短絡することによって実現できるから
極めて急激な電圧の変化を容易に得ることができる。Since such a lamp voltage can be realized by short-circuiting a capacitor that has been charged with a high voltage in advance, an extremely rapid change in voltage can be easily obtained.
しかし電子ビームは前述のように十数キロボルトに加速
されているから十分な偏向角を得るために数キロボルト
の大きな偏向電圧を必要とする。However, as mentioned above, since the electron beam is accelerated to more than ten kilovolts, a large deflection voltage of several kilovolts is required to obtain a sufficient deflection angle.
このような目的のスイッチング回路はトランジスタの耐
圧が低いから数個のトジンジスタを直列接続して用いな
げればならず、このような回路は電圧の変化の速度を大
きくすることが困難であり、かつトリガ信号の入力から
トランジスタの短絡動作の完了までの応答時間が不安定
であるから所望のタイミングで駆動することが困難であ
る。Switching circuits for this purpose must use several transistors connected in series because the withstand voltage of the transistor is low, and it is difficult to increase the speed of voltage change in such a circuit, and Since the response time from the input of the trigger signal to the completion of the short-circuiting operation of the transistor is unstable, it is difficult to drive the transistor at a desired timing.
またこのようなランプ電圧発生キャパシタによって得ら
れる電圧の変化の速度は5ボルト/ヒコ秒が限界である
から、露出動作のため2キロボルトの偏向電圧を必要と
するとき400ピコ秒以下の露出時間を得ることができ
ない。Furthermore, since the speed of voltage change obtained by such a lamp voltage generation capacitor is limited to 5 volts/hikosecond, when a deflection voltage of 2 kilovolts is required for exposure operation, the exposure time is less than 400 picoseconds. can't get it.
さらに偏向板39,40,41および42の設計的な構
造と電子ビームの加速電圧に応じて偏向板40に加える
掃引電圧と偏向板41に加える掃引電圧との間に適当な
振幅の差および位相差を必要とすることもある。Furthermore, depending on the design structure of the deflection plates 39, 40, 41, and 42 and the accelerating voltage of the electron beam, an appropriate amplitude difference and position are determined between the sweep voltage applied to the deflection plate 40 and the sweep voltage applied to the deflection plate 41. A phase difference may also be required.
さらに上述のシャツタ管3は収束および偏向のための電
極設計上、光電面33と陽極板3Bの距離を短くするこ
とができず、これが高い加速電圧を必要とする原因とな
り、その結果偏向電圧を小さくすることができない。Furthermore, in the above-mentioned Shatta tube 3, due to the electrode design for convergence and deflection, it is not possible to shorten the distance between the photocathode 33 and the anode plate 3B, which causes the need for a high acceleration voltage, and as a result, the deflection voltage is reduced. cannot be made smaller.
本発明の目的は低電圧で動作する電子ビームシャツタ管
を用い、しかも高速で電子ビームのシャツタ動作をする
ことができる電子ビームシャツタ管を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam shutter tube that uses an electron beam shutter tube that operates at low voltage and can perform electron beam shutter operation at high speed.
次に本発明による電子ビームンヤツタ管の実施例である
イメージ管型のシャツタ管を例に詳細に説明する。Next, a detailed description will be given of an image tube type shutter tube, which is an embodiment of the electron beam beam tube according to the present invention.
第3図は本発明のイメージ管型のシャツタ管6で、有底
円筒状の真空気密容器61の第1の底面に設けた光の入
射窓62の内壁に光電面63が形成されており、光電面
63に対して螢光面65が真空気密容器61の第2の底
面をなす光の出射窓66の内壁に形成されている。FIG. 3 shows an image tube type shutter tube 6 of the present invention, in which a photocathode 63 is formed on the inner wall of a light entrance window 62 provided on the first bottom surface of a bottomed cylindrical vacuum-tight container 61. In contrast to the photocathode 63, a fluorescent surface 65 is formed on the inner wall of a light exit window 66 forming the second bottom surface of the vacuum-tight container 61.
板状体64は光電面63と螢光面650間に、それらに
平行に設げられている。The plate-like body 64 is provided between the photocathode 63 and the fluorescent surface 650 in parallel thereto.
板状体64の構造を第4図、第5図および第6図によっ
て説明する。The structure of the plate-like body 64 will be explained with reference to FIGS. 4, 5, and 6.
第4図は、板状体64を正面すなわち第3図において電
子ビーム像が板状体64に入射する方向A−A方向から
見た図で、面に垂直に可能な限り均一な内径の多数の貫
通孔75・・・・・・T5が全面に亘って可能な限り均
一な間隔で配列ルであり、対向する2端にはそれぞれ電
極67および電極68が設けてある。FIG. 4 is a view of the plate-like body 64 viewed from the front, that is, from the direction A-A in which the electron beam image is incident on the plate-like body 64 in FIG. The through holes 75...T5 are arrayed over the entire surface at as uniform intervals as possible, and electrodes 67 and 68 are provided at two opposing ends, respectively.
板状体64の材質は堅牢であることが望ましいが、後述
するように電極67と電極68の間に電圧を加えたとき
、その間に均一な電位勾配を生じる必要から、比較的高
抵抗の導電性を有することおよび貫通孔75の内壁に電
子が衝突したとき可酷な限りその衝突電子を上記内壁で
吸収する必要から二次電子放出比の小さいことが望まし
い。It is desirable that the material of the plate-shaped body 64 be strong, but as will be described later, when a voltage is applied between the electrodes 67 and 68, it is necessary to create a uniform potential gradient therebetween, so it is necessary to use a conductive material with relatively high resistance. It is desirable that the secondary electron emission ratio be small because it is necessary for the inner wall of the through hole 75 to absorb the collision electrons as much as possible when the electrons collide with the inner wall of the through hole 75.
もちろん板状体64は、単一物質で構成する必要はない
から、基体を電気絶縁性のセラミックで構成し、貫通孔
75の内壁に比較的二次電子放出比が小さく、かつ十分
な導電性を有するニッケルや白金層を形成し、板状体の
面には比較的高い抵抗を有するモリブデンの極めて薄い
層を形成したものでもよい。Of course, the plate-shaped body 64 does not need to be made of a single material, so the base body is made of electrically insulating ceramic, and the inner wall of the through hole 75 has a relatively small secondary electron emission ratio and has sufficient conductivity. It is also possible to form a nickel or platinum layer having a nickel or platinum layer, and to form an extremely thin layer of molybdenum, which has a relatively high resistance, on the surface of the plate.
最も容易に作るこ左のできるものには鉛含有ガラスの管
を束ね、融着した後、鉛を水素で還元し適当な冨気抵抗
を生じたものがある。The easiest to make is one in which lead-containing glass tubes are bundled and fused together, and then the lead is reduced with hydrogen to create an appropriate resistance to air.
第5図は、第4図B−B断面図であり、第6図は第5図
の部分Cを拡大した図である。FIG. 5 is a sectional view taken along line BB in FIG. 4, and FIG. 6 is an enlarged view of portion C in FIG.
続いて上述のシャツタ管の動作を説明する。Next, the operation of the above-mentioned shatter tube will be explained.
第3図において光電面63に対して螢光面65は電源6
9,70および71によって高電位に保たれており、板
状体64は、その一方の電極6Bを電源71の正電極と
電源70の負電極の接点に接続して光電面63に対して
高電位を保つと共に接地し、他方の電極67を抵抗72
を介して電源70の正電極を電源69の負電極の接続点
に接続して電極68に対して高電位に保つとともにキャ
パシタ74を介して高速ランプ電圧発生器73に接続し
てある。In FIG. 3, the fluorescent surface 65 is connected to the power source 6 with respect to the photocathode 63.
9, 70, and 71, and the plate-shaped body 64 is kept at a high potential with respect to the photocathode 63 by connecting one electrode 6B to the contact between the positive electrode of the power source 71 and the negative electrode of the power source 70. The potential is maintained and the other electrode 67 is connected to the resistor 72.
The positive electrode of a power source 70 is connected to the connection point of the negative electrode of a power source 69 through a capacitor 74 to maintain a high potential with respect to the electrode 68, and to a fast ramp voltage generator 73 through a capacitor 74.
従って高速ランプ電圧発生器73が出力電圧の変化を開
始する前は光電面63から放出した電子ビームは板状体
640貫通孔75に入射するが、電極67と電極68と
の電位差により貫通孔75の軸に垂直な方向に電界を生
じているから、第6図に示す軌道aに示すように電子ビ
ームは偏向し、貫通孔75の内壁に衝突し吸収される。Therefore, before the high-speed ramp voltage generator 73 starts changing the output voltage, the electron beam emitted from the photocathode 63 enters the through hole 75 of the plate-like body 640, but due to the potential difference between the electrodes 67 and 68, the electron beam Since an electric field is generated in a direction perpendicular to the axis of the electron beam, the electron beam is deflected as shown by trajectory a shown in FIG. 6, collides with the inner wall of the through hole 75, and is absorbed.
貫通孔75の内径を100μm、長さ5In1ILとす
れば1000eVのエネルギをもち、貫通孔75に平行
に入射した光電子がすべて貫通孔75の内壁に衝突する
ために貫通孔75の対向する壁の間に0.4ボルト以上
必要である。If the inner diameter of the through hole 75 is 100 μm and the length is 5In1IL, it has an energy of 1000 eV, and since all the photoelectrons incident parallel to the through hole 75 collide with the inner wall of the through hole 75, there is a gap between the opposing walls of the through hole 75. 0.4 volt or more is required.
光電面53の直径が10mrILあり、従って板状体6
4の一辺の長さ、言い換えれば電極67と電極68の間
隔を10IIt7nとすれば電極67と電極68の間に
加える電圧は40ボルト以上必要となる。The diameter of the photocathode 53 is 10 mrIL, so the plate-shaped body 6
If the length of one side of 4, in other words, the distance between the electrodes 67 and 68, is 10IIt7n, the voltage applied between the electrodes 67 and 68 will need to be 40 volts or more.
上記電圧が40ボル斗であれば電子ビームは第6図に示
す軌道bを通り、電圧が加えられていないときは第6図
に示す軌道Cを通る。When the voltage is 40 volts, the electron beam passes along trajectory b shown in FIG. 6, and when no voltage is applied, it passes along trajectory C shown in FIG.
従って電源70の電圧を100ボルトとしておき、高速
ランプ電圧発生器73が負の方向にランプ電圧の接地を
開始すると、電極67の電圧が40ボルトから負の40
ボルトの間にあるとき光電面63に投影された光学像が
螢光面65に再現される。Therefore, when the voltage of the power supply 70 is set at 100 volts and the fast ramp voltage generator 73 starts grounding the lamp voltage in the negative direction, the voltage of the electrode 67 changes from 40 volts to a negative 40 volts.
The optical image projected onto the photocathode 63 when the photocathode is between the bolts is reproduced on the fluorescent surface 65.
上述のイ.メージ管型のシャツタ管はそれ自体で高速で
変化し、あるいは移動する被写体の静止画像を得ること
ができるが、そのために電極に加える電圧の変化の速さ
は被写体の変化あるいは移動の速さに対応するものでな
げればならない。A. mentioned above. The image tube-type Shasta tube itself can change at high speed or obtain a still image of a moving object, but for this purpose, the speed of change of the voltage applied to the electrode is dependent on the speed of change or movement of the object. It must be thrown with a corresponding one.
しかし光電面に近接しかつ対向して前述の板状体を配置
するから収束電極を必要とせず、板状体へ入射する電子
のエネルギはたかだか1キロボルトで十分であり、それ
に応じて板状体の電極に加える電圧も低くすることがで
きる。However, since the aforementioned plate-shaped body is placed close to and facing the photocathode, no focusing electrode is required, and the energy of the electrons incident on the plate-shaped body is at most 1 kilovolt, and the plate-shaped body is adjusted accordingly. The voltage applied to the electrodes can also be lowered.
しかも厳密な電圧を必要としない。Moreover, it does not require a strict voltage.
前述の本発明の実施例において、ランプ電圧発生器の出
力電圧の変化の速度を5ボルト/ピコ秒とすれば、16
ピコ秒の露出時間が得られる。In the embodiment of the invention described above, if the rate of change of the output voltage of the lamp voltage generator is 5 volts/picosecond, then 16
This gives picosecond exposure times.
これは前述の従来技術の例に比べて25分の1である。This is 1/25th of the prior art example described above.
以上はイメージ管型のシャツタ管について説明したが、
イメージオルシコン管型のシャツタ管についても本発明
を適用できる。Above I explained about the image tube type Shasta tube.
The present invention can also be applied to an image orthicon tube type Shasta tube.
すなわちイメージォルシコン管型において光電面と蓄積
ターゲットの間に適当な電気抵抗を有し、その面に垂直
な複数の細い貫通孔を有し、対向する2端に電極を有す
る板状体を設けたシャツタ管であってもよい。That is, in the imageorsicon tube type, a plate-like body having an appropriate electrical resistance between the photocathode and the storage target, a plurality of thin through holes perpendicular to the surface, and electrodes at two opposing ends is used. It may also be a shatter tube provided.
イメージオルシコシ管型のシャツタ管の構造は前述のイ
メージ管型のシャツタ管における螢光面の代りに蓄積タ
ーゲットを置換すれば良い。The structure of the image tube-type Shasta tube may be obtained by replacing the fluorescent surface with the storage target in the image tube-type Shasta tube described above.
光電面螢光面および板状体の2つの電極に加える相対的
電圧は同一と考えればよい。It is sufficient to consider that the relative voltages applied to the two electrodes of the photocathode fluorescent surface and the plate-shaped body are the same.
もちろんこのとき板状体の電極に加えるパルスは垂直同
期信号に同期することが望ましい。Of course, at this time, it is desirable that the pulses applied to the electrodes of the plate-shaped body be synchronized with the vertical synchronization signal.
以上のように本発明による電子ビームシャツタ管は、板
状体であってその任意の対向する2端縁に別個に電極を
設け、それら電極の間の部分に均一な電界を加えること
ができる電子ビームシャツタ装置を使用する。As described above, the electron beam shutter tube according to the present invention is a plate-shaped body, and electrodes are separately provided on any two opposing edges of the plate, and a uniform electric field can be applied to the area between the electrodes. Use an electron beam shutter device.
この電子ビームシャツタ装置の板状体の面に垂直な複数
の貫通孔が設けられており、上記2つの電極の間にそれ
ら電極のうち一方の側から他方の側へ電子ビームを掃引
するように変化する電圧を加える電圧源を接続すること
により、電子ビームの高速遮断または通過制限を可能に
している。A plurality of perpendicular through holes are provided in the surface of the plate-like body of this electron beam shutter device, and the electron beam is swept between the two electrodes from one side to the other. By connecting a voltage source that applies a voltage that varies, it is possible to quickly cut off or limit the passage of the electron beam.
電子ビームシャツタを通過した電子ビームを電子ビーム
を受ける面で画像または画像信号に変換される。The electron beam that has passed through the electron beam shutter is converted into an image or an image signal on the surface that receives the electron beam.
電子ビームを受ける面として前述した螢光面または蓄積
ターゲットを用いることができる本発明による電子ビー
ムシャツタ管は高速で変化しあるいは移動する被写体に
原因する螢光面からの変化の烈しい電子ビームを電子ビ
ームシャツタ管で、低い電圧変化で、高速制御でき、電
子ビームを受ける面で、静止画像または静止画像を形成
できる信号に変換できる。The electron beam shutter tube according to the present invention, which can use the aforementioned fluorescent surface or storage target as a surface receiving the electron beam, is capable of absorbing a highly variable electron beam from a fluorescent surface caused by a rapidly changing or moving object. The electron beam shutter tube can be controlled at high speed with low voltage changes, and can be converted into a signal that can form a still image or still image on the surface that receives the electron beam.
静止映像を偏向の方向に流れることなく得ることができ
る特徴も得られる。A feature that allows a still image to be obtained without flowing in the direction of deflection is also obtained.
電子ビームシャツタ装置が管軸方向に占有する長さは小
さいので電子ビームシャツタ装置を比軸的短く構成でき
る。Since the length occupied by the electron beam shutter device in the tube axis direction is small, the electron beam shutter device can be configured to be relatively short.
なお本発明による電子ビームシャツタ管は前述したイメ
ージ管型またはイメージオルシコン型Cシャツタ管に限
ることなく、電子ビーム像を形成できる真空管であれば
同様に適用することができる。Note that the electron beam shutter tube according to the present invention is not limited to the above-mentioned image tube type or image orthicon type C-shaft tube, but can be similarly applied to any vacuum tube that can form an electron beam image.
第1図および第2図は従来のシャツタ管の断面構造図、
第3図は本発明の実施例のシャッタ管の断面構造図、第
4図は本発明による電子ビームシャツタ管に用いられる
板状体の正面図、第5図は第4図のB・一B断面図、第
6図は第5図の部分Cの拡大図である。
6・・・・・・シャッタ管、61・・・・・・真空気密
容器、62・・・・・・入射窓、63・・曲光電面、6
4・・曲板状体、65・・・・・・螢光面、6γ,68
・・・・・・電極、69,70,71・・・・・・電源
、72・・・・・・抵抗、73・聞・高圧ランプ電圧発
生器、74・・・・・・キャパシタ、75・・・・・・
貫通孔。Figures 1 and 2 are cross-sectional structural diagrams of a conventional shatter tube;
FIG. 3 is a cross-sectional structural diagram of a shutter tube according to an embodiment of the present invention, FIG. 4 is a front view of a plate-like body used in an electron beam shutter tube according to the present invention, and FIG. B sectional view, FIG. 6 is an enlarged view of portion C in FIG. 6... Shutter tube, 61... Vacuum-tight container, 62... Incident window, 63... Curved light surface, 6
4... Curved plate-like body, 65... Fluorescent surface, 6γ, 68
... Electrode, 69, 70, 71 ... Power supply, 72 ... Resistor, 73 - High voltage lamp voltage generator, 74 ... Capacitor, 75・・・・・・
Through hole.
Claims (1)
面に設けられた光電面と、第1面が前記光電面に対向さ
せられ、前記光電面からの電子を通過させる多数の貫通
孔と前記貫通孔に直角方向に電界を発生させる電極が両
端縁に設けられている板状の電子ビームシャツタと、前
記冨子ビームシャツタを通過した電子を画像または画像
信号に変換するために、前記電子ビームシャツタの出射
面に対向させられている電子ビームを受ける面と、前記
光電面で発生した光電子を電子ビームシャツ夕方向に加
速し、商子ビームシャツタを通過した電子を電子ビーム
を受ける面方向に加速する電界発生装置と、前記電子ビ
ームシャツタの電極に偏向電界を発生させる偏向電界発
生装置とから構成した電子ビームシャツタ管。 2 前記電子ビームを受ける面は前記真空密封容器の光
電面に対向する面に設けられた螢光面である特許請求の
範囲第1項記載の電子ビームシャツタ管。[Scope of Claims] 1. A vacuum-sealed container having a light entrance window, a photocathode provided on the inner surface of the entrance window, and a first surface facing the photocathode, through which electrons from the photocathode pass. A plate-shaped electron beam shutter is provided with a large number of through holes and electrodes on both edges to generate an electric field in a direction perpendicular to the through holes, and the electrons passing through the Tomiko beam shutter are converted into an image or an image signal. In order to convert the electron beam, photoelectrons generated at the electron beam receiving surface facing the emission surface of the electron beam shutter and the photocathode are accelerated in the direction of the electron beam shutter, and then passed through the electron beam shutter. An electron beam shutter tube comprising: an electric field generator for accelerating electrons in the direction of a surface receiving the electron beam; and a deflection electric field generator for generating a deflection electric field in an electrode of the electron beam shutter. 2. The electron beam shutter tube according to claim 1, wherein the surface receiving the electron beam is a fluorescent surface provided on a surface of the vacuum sealed container facing the photocathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12925482A JPS598945B2 (en) | 1982-07-23 | 1982-07-23 | electron beam shatter tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12925482A JPS598945B2 (en) | 1982-07-23 | 1982-07-23 | electron beam shatter tube |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55116241A Division JPS58145B2 (en) | 1980-08-22 | 1980-08-22 | Electron beam shutter device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844661A JPS5844661A (en) | 1983-03-15 |
| JPS598945B2 true JPS598945B2 (en) | 1984-02-28 |
Family
ID=15005017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12925482A Expired JPS598945B2 (en) | 1982-07-23 | 1982-07-23 | electron beam shatter tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS598945B2 (en) |
-
1982
- 1982-07-23 JP JP12925482A patent/JPS598945B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5844661A (en) | 1983-03-15 |
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