JPS6013298B2 - Diffusion cleaning jig for semiconductor manufacturing - Google Patents
Diffusion cleaning jig for semiconductor manufacturingInfo
- Publication number
- JPS6013298B2 JPS6013298B2 JP2867477A JP2867477A JPS6013298B2 JP S6013298 B2 JPS6013298 B2 JP S6013298B2 JP 2867477 A JP2867477 A JP 2867477A JP 2867477 A JP2867477 A JP 2867477A JP S6013298 B2 JPS6013298 B2 JP S6013298B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor manufacturing
- silicon carbide
- diffusion
- silicon
- cleaning jig
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000004140 cleaning Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 title claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000001877 deodorizing effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は半導体製造に使用される拾具に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pick-up tool used in semiconductor manufacturing.
トランジスタ等を製造するために使用されるシリコン単
結晶はその特性上製造工程における純度維持が極めて重
大な課題となっている。Due to the characteristics of silicon single crystals used to manufacture transistors and the like, maintaining purity during the manufacturing process is an extremely important issue.
従って、不純物をド−ブしたり酸化処理するための拡散
炉においてはシリコンウェハーを並列させるための拡散
治具、或いは処理後シリコンウェハーを洗練する際にこ
れを並列させるための治臭等はそれぞれその使用条件を
考慮して石英ガラス、シリコン、テフロン等が使い分け
られている。例えば「拡散治具は高温にさらされるため
石英ガラス、シリコン等が使用され、又洗糠治具として
は耐酸性のあるテフロンが通常使用されている材料であ
る。従って、拡散処理が終ったシリコンウェハ−を洗練
治具に一枚一枚移し変えなければならず、手間がかかる
だけでなく、この移し変え作業による新たな汚染を考慮
しなければならない等不都合な点が多かった。本発明は
拡散と洗練を兼用できる治具を使用することによって汚
染源となり得る移し変え工程を省略し能率のよい製造工
程に改良したものである。Therefore, in a diffusion furnace for doping impurities or performing oxidation treatment, a diffusion jig for aligning silicon wafers, or a deodorizing tool for aligning silicon wafers in parallel when refining silicon wafers after processing, is required. Quartz glass, silicon, Teflon, etc. are used depending on the usage conditions. For example, ``Diffusion jigs are exposed to high temperatures, so quartz glass, silicone, etc. are used, and acid-resistant Teflon is the commonly used material for rice bran cleaning jigs. The wafers have to be transferred one by one to a polishing jig, which is not only time-consuming but also has many disadvantages, such as the need to consider new contamination due to this transfer operation.The present invention By using a jig that can perform both diffusion and refinement, the transfer process, which can be a source of contamination, is omitted and the manufacturing process is improved to be more efficient.
即ち、炭化珪素又は炭化珪素一金属シリコンからなる基
体表面に１０ｒ以上の膜厚方向に貫通する連続気孔の存
在しない通気度がほぼ零の繊密な炭化珪素を被覆したも
ので、このものは拡散炉における高熱に耐えると共にシ
リコンウェハーに対して何等の汚染源とならず、且つ弗
酸、王水、硝弗酸等の強酸に対しても溶解されないばか
りでなく、炭化珪素のイオン吸着力が石英ガラス、テフ
ロン等と比較して著しく小さいので洗練がきわめて容易
になる。即ち本発明のものは拡散一洗液の移し変え工程
がなくなり洗練工程が簡略できる等きわめてすぐれた効
果が認められる。本発明において表面に被覆された炭化
珪素膜は上述の如き効果が認められるが、その厚さは１
０仏以下ではピンホールが存在するようになり、このた
め基体内への洗練水の浸透が多くなり洗係効果が妨げら
れるばかりでなく、基体の不純物が表面に惨出してシリ
コンゥェハーを汚染させるため基体を必要以上に高純度
のものとしなければならず好ましくない。That is, the surface of a substrate made of silicon carbide or silicon carbide-metallic silicon is coated with dense silicon carbide, which has almost zero air permeability and has no continuous pores penetrating in the thickness direction of 10 r or more. It can withstand high heat in the furnace, does not become a source of contamination for silicon wafers, and is not dissolved by strong acids such as hydrofluoric acid, aqua regia, and nitric-fluoric acid. , is significantly smaller than Teflon, etc., making refinement extremely easy. That is, the method of the present invention has extremely excellent effects, such as eliminating the step of transferring the diffusion and washing solution and simplifying the refinement step. In the present invention, the silicon carbide film coated on the surface has the above-mentioned effects, but its thickness is 1
Below 0°, pinholes begin to exist, which not only impedes the cleaning effect due to the permeation of refined water into the substrate, but also causes impurities from the substrate to come out onto the surface and contaminate the silicon wafer. This is not preferable since the substrate must be made of a higher purity than necessary.
表面の炭化珪素被膜は気孔率がほぼ０に等しくすること
ができ、基体である通常の炭化珪素体単体のみでは多孔
性であるため洗液に際し脱水が不充分で好ましくないが
、これを被覆することによって洗練水等の浸透を阻止す
ることができる。The porosity of the silicon carbide coating on the surface can be made almost equal to 0, and since the ordinary silicon carbide base alone is porous, dehydration is insufficient during washing and is not preferable. By doing so, penetration of refined water, etc. can be prevented.
以下に本発明の一実施例を説明する。２００メッシュ以
下の炭化珪素粉を黒鉛粉及びフェノールレジンと共に混
合して常法により舟形の拡散用捨臭状に成形した。この
成形体中の炭素を珪素化して炭化珪素成形体とした。更
にこれを０．３トールの減圧炉内でシリカ及び炭素の混
合粉による珪素系蒸気で１７００ｑｏで３２時間処理す
ることによって８０仏厚の炭化珪素被膜をその表面に形
成させた。この治具を常法により拡散炉に使用したとこ
ろ「シリコンゥェハーの純度には従来のシリコン製等の
治具と比較して何等変化はなく、拡散処理後シリコンゥ
ェハ−を並列させたま）兼硝酸洗練処理をしたところ、
ほとんど腐触されなかった。An embodiment of the present invention will be described below. Silicon carbide powder of 200 mesh or less was mixed with graphite powder and phenol resin, and formed into a boat-shaped odor dispersion shape by a conventional method. The carbon in this molded body was silicified to obtain a silicon carbide molded body. Further, this was treated in a vacuum furnace at 0.3 torr with silicon-based steam made from a mixed powder of silica and carbon at 1700 qo for 32 hours, thereby forming a silicon carbide film with a thickness of 80 mm on its surface. When this jig was used in a diffusion furnace using the usual method, it was found that there was no change in the purity of the silicon wafers compared to conventional silicon wafers, and the silicon wafers were placed side by side after the diffusion process and nitric acid polishing process. When I did that,
Almost no corrosion occurred.
この際、使用した純水の量を従来の場合と比較したとこ
ろテフロンの１′１０〜１ふ石英ガラスの１′２となり
ｔイオン吸着の小さい効果が明瞭に認められた。又、強
度的にも遠心分離機にかけても何等異常が認められなか
った。本発明の治具は上述のように拡散及び洗練用とし
て兼ねることができるので「その移し変え工程が不必要
となり、半導体製造工程がそれだけ簡略化したものであ
る。At this time, when the amount of pure water used was compared with the conventional case, it was 1'10 for Teflon to 1'2 for fused silica glass, clearly showing a small effect on adsorption of t-ions. Also, no abnormalities were observed in terms of strength or when subjected to centrifugation. Since the jig of the present invention can be used for both diffusion and refinement as described above, the transfer process becomes unnecessary and the semiconductor manufacturing process is simplified accordingly.
Claims (1)
る連続気孔の存在しない通気度がほぼ零の緻密質炭化珪
素被膜を形成せしめてなる炭化珪素又は炭化珪素−金属
珪素体よりなることを特徴とする半導体製造用拡散洗滌
兼用治具。1. The surface is characterized by being made of silicon carbide or a silicon carbide-metallic silicon body formed by forming a dense silicon carbide film with almost zero air permeability and no continuous pores penetrating in the film thickness direction of at least 10 μm or more. Diffusion cleaning jig for semiconductor manufacturing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2867477A JPS6013298B2 (en) | 1977-03-17 | 1977-03-17 | Diffusion cleaning jig for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2867477A JPS6013298B2 (en) | 1977-03-17 | 1977-03-17 | Diffusion cleaning jig for semiconductor manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53114678A JPS53114678A (en) | 1978-10-06 |
| JPS6013298B2 true JPS6013298B2 (en) | 1985-04-06 |
Family
ID=12255035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2867477A Expired JPS6013298B2 (en) | 1977-03-17 | 1977-03-17 | Diffusion cleaning jig for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6013298B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022018863A1 (en) | 2020-07-22 | 2022-01-27 | 日本電信電話株式会社 | High frequency package |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5884427A (en) * | 1981-11-13 | 1983-05-20 | Toshiba Corp | Furnace tube for forming semiconductor-diffused layer |
| JPS59200432A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Ceramics Co Ltd | Tool for carrying wafer boat |
| JPS59200431A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Ceramics Co Ltd | Tool for carrying wafer boat |
| JPS6139545A (en) * | 1984-07-31 | 1986-02-25 | Toshiba Ceramics Co Ltd | Wafer carrier |
| US4761134B1 (en) * | 1987-03-30 | 1993-11-16 | Silicon carbide diffusion furnace components with an impervious coating thereon |
-
1977
- 1977-03-17 JP JP2867477A patent/JPS6013298B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022018863A1 (en) | 2020-07-22 | 2022-01-27 | 日本電信電話株式会社 | High frequency package |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53114678A (en) | 1978-10-06 |
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