JPS60143677A - 光検出装置及びその製造方法 - Google Patents
光検出装置及びその製造方法Info
- Publication number
- JPS60143677A JPS60143677A JP58249545A JP24954583A JPS60143677A JP S60143677 A JPS60143677 A JP S60143677A JP 58249545 A JP58249545 A JP 58249545A JP 24954583 A JP24954583 A JP 24954583A JP S60143677 A JPS60143677 A JP S60143677A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- region
- film
- sit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/285—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN homojunction gates
- H10F30/2863—Field-effect phototransistors having PN homojunction gates
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58249545A JPS60143677A (ja) | 1983-12-29 | 1983-12-29 | 光検出装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58249545A JPS60143677A (ja) | 1983-12-29 | 1983-12-29 | 光検出装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60143677A true JPS60143677A (ja) | 1985-07-29 |
| JPH051632B2 JPH051632B2 (sr) | 1993-01-08 |
Family
ID=17194581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58249545A Granted JPS60143677A (ja) | 1983-12-29 | 1983-12-29 | 光検出装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60143677A (sr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63269578A (ja) * | 1987-04-28 | 1988-11-07 | Olympus Optical Co Ltd | 半導体装置 |
-
1983
- 1983-12-29 JP JP58249545A patent/JPS60143677A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63269578A (ja) * | 1987-04-28 | 1988-11-07 | Olympus Optical Co Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH051632B2 (sr) | 1993-01-08 |
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