JPS6014833B2 - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS6014833B2 JPS6014833B2 JP16472478A JP16472478A JPS6014833B2 JP S6014833 B2 JPS6014833 B2 JP S6014833B2 JP 16472478 A JP16472478 A JP 16472478A JP 16472478 A JP16472478 A JP 16472478A JP S6014833 B2 JPS6014833 B2 JP S6014833B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- cathode
- pressing force
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 23
- 238000003825 pressing Methods 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 230000006378 damage Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明はスパッタリング中に生じる熱的破壊を防止し
たスパッタリング用ターゲットに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputtering target that prevents thermal damage occurring during sputtering.
スパッタリング方式には、直流二極スパッタリング、直
流三極スパッタリング、高周波スパッタリングなどがあ
り、いずれも破膜形成物質であるターゲットを用いてい
る。Sputtering methods include DC bipolar sputtering, DC triode sputtering, and high-frequency sputtering, all of which use targets that are membrane-rupturing substances.
たとえば上託したスパッタリング方式のうち高周波スパ
ッタリングを例にしてその構成について説明する。For example, among the entrusted sputtering methods, high frequency sputtering will be used as an example to explain its configuration.
第１図は高周波二極スパッタリング装置を示したもので
ある。FIG. 1 shows a high frequency bipolar sputtering apparatus.
図において、１は気密容器を示し、この気密容器１には
一対の平行平板状の陰極２と陽極３が配置されている。
陰極２には被膜を形成する物質であるターゲット４が固
定されている。５はシャツ夕で、陰極２と陽極３との間
に配置されている。In the figure, reference numeral 1 indicates an airtight container, in which a pair of parallel flat cathode 2 and anode 3 are arranged.
A target 4, which is a substance forming a film, is fixed to the cathode 2. Reference numeral 5 denotes a shirt plate, which is arranged between the cathode 2 and the anode 3.
６はその表面に薄膜が形成される基板で、この基板６は
陽極３に固定され、スパッタリング中には２００〜５０
０００に加熱される。6 is a substrate on which a thin film is formed; this substrate 6 is fixed to the anode 3;
000.
７，８は排気孔、９はガス導入口、１０は高周波電源（
１３．８Ｍ世）で、陰極２に接続されている。7 and 8 are exhaust holes, 9 is a gas inlet, and 10 is a high frequency power supply (
13.8M) and is connected to cathode 2.
この装置において高周波スパッタリングを行う一例を説
明する。まず気密容器１を密封したのち、排気孔７，８
から容器１内の気体を除去し、たとえば１×１０‐６Ｔ
ｏｎの真空度に排気する。次にガス導入口９からたとえ
ば酸素、窒素、アルゴンなどの気体、またはこれらの混
合気体を導入し、ガス圧を１×１０‐１〜１×１０‐４
Ｔｏｍ程度の真空度に調整する。さらに陰極２に高周波
電源１０により高周波電力を印加し、陰極２と陽極３の
間‐乙放電させ、陰極２に固定されたターゲット４をイ
オンでたたき、ターゲット４から粒子を飛散させてこれ
を基板６の表面に付着させている。上記した構成におい
て、基板６に被膜を形成する速度は、高周波電力が大き
いほど早くなる。An example of performing high frequency sputtering using this apparatus will be described. First, after sealing the airtight container 1,
Remove the gas in the container 1 from, for example, 1×10-6T
Evacuate to on vacuum level. Next, a gas such as oxygen, nitrogen, argon, or a mixture thereof is introduced from the gas inlet 9, and the gas pressure is set to 1 x 10-1 to 1 x 10-4.
Adjust the degree of vacuum to approximately Tom. Further, high-frequency power is applied to the cathode 2 by the high-frequency power supply 10 to cause a discharge between the cathode 2 and the anode 3, and the target 4 fixed to the cathode 2 is hit with ions, particles are scattered from the target 4 and transferred to the substrate. It is attached to the surface of 6. In the above configuration, the speed at which the film is formed on the substrate 6 increases as the high frequency power increases.
被膜形成速度を上げるため高周波電力を大きくすると、
ターゲット４としてセラミクス、ガラス、合成樹脂など
の金属以外のものを用いた場合に、ターゲットの熱的な
破壊の生じることがたびたび見られた。これは陰極２が
冷却水で冷やされる一方、陰極２に固定されたターゲッ
ト４がイオンの衝突で高い温度で発熱するため、陰極２
とターゲット４との間に温度差が生じ、これにより熱的
破壊が生じるものと考えられる。When increasing the high frequency power to increase the film formation speed,
When a material other than metal, such as ceramics, glass, or synthetic resin, is used as the target 4, thermal destruction of the target has often been observed. This is because while the cathode 2 is cooled by cooling water, the target 4 fixed to the cathode 2 generates heat at a high temperature due to the collision of ions.
It is thought that a temperature difference occurs between the target 4 and the target 4, and this causes thermal destruction.
またターゲット４自体に高い高周波電力が加えられると
、ターゲット４の熱膨脹力と抗張力との釣り合いがとれ
ないことになり、これによって熱的破壊が生じるとも考
えられる。この発明は上記した熱的な破壊の生じないス
パッタリング用ターゲットを提供することを目的とした
もので、その要旨とするところは、スパッタリング装置
の陰極本体にターゲットが固定されており、該ターゲッ
トはセラミクス、ガラス、樹脂などの金属を除く板状の
ターゲットよりなり、該ターゲットの外周側面には周囲
から外的押圧手段による機械的押圧力が加えられてなる
スパッタリング用ターゲットである。It is also believed that if high frequency power is applied to the target 4 itself, the thermal expansion force and tensile strength of the target 4 will not be balanced, resulting in thermal destruction. The purpose of this invention is to provide a sputtering target that does not cause the above-mentioned thermal breakdown, and its gist is that the target is fixed to the cathode body of a sputtering device, and the target is made of ceramics. A sputtering target is made of a plate-shaped target made of glass, resin, or the like, excluding metal, and a mechanical pressing force is applied from the periphery by an external pressing means to the outer circumferential side of the target.
以下この発明を図示した一実施例に従って説明する。The present invention will be described below according to an illustrated embodiment.
第２図は第１図で示した高周波二極スパッタリング装置
のうち、この発明に関する陰極側について図示したもの
で、以下の説明から理解できるようにマグネットを使用
した高速高周波二極スパッタリングに適用したものであ
る。Figure 2 shows the cathode side of the high-frequency bipolar sputtering apparatus shown in Fig. 1, which is related to this invention, and is applied to high-speed high-frequency bipolar sputtering using a magnet, as will be understood from the following explanation. It is.
図において、１１は陰極本体で、この陰極本体１１の空
部１２にはマグネット１３が配置されているとともに、
陰極本体１１を冷やす冷却水を給排水するためのパイプ
１４，１５が取り付けられている。In the figure, 11 is a cathode main body, and a magnet 13 is arranged in a hollow part 12 of this cathode main body 11.
Pipes 14 and 15 are attached to supply and drain cooling water for cooling the cathode body 11.
１６は陰極本体に高周波電力を印加するための端子であ
る。16 is a terminal for applying high frequency power to the cathode body.
１７は円板形の板状ターゲットで、このターゲット１７
はボルト２０１こより陰極本体１１に固定された○リン
グ１８の内壁側のフランジ１９により陰極本体１１側へ
押庄園定され、また０リング１８の側壁に○リング１８
の径方向に形成された貫通孔にネジ止めされたボルト２
１によりターゲット１７の外周側面が押圧されている。17 is a disc-shaped plate-like target;
is fixed to the cathode body 11 side by the flange 19 on the inner wall side of the ○ ring 18 fixed to the cathode body 11 through the bolt 201, and the ○ ring 18 is fixed to the side wall of the O ring 18.
Bolt 2 screwed into a through hole formed in the radial direction of
1 presses the outer peripheral side surface of the target 17.
ターゲット１７として直径１５仇岬、厚み６脇のセラミ
クスからなるものを用い、陰極本体１１に高周波電力を
加えたところ、７〜８Ｗ′めでもターゲット１７の熱的
破壊は見られなかった。ちなみにボルト２１でターゲッ
ト１７を押圧していない従来のものでは１．７〜２．２
Ｗ／ので熱的破壊が認められた。次に、ターゲットの外
周側面に加える押圧力の大きさとターゲットの熱的破壊
の関係について説明する。When the target 17 was made of ceramics with a diameter of 15 mm and a thickness of 6 mm, and high frequency power was applied to the cathode body 11, no thermal destruction of the target 17 was observed even at 7 to 8 W'. By the way, the conventional one that does not press the target 17 with the bolt 21 has a pressure of 1.7 to 2.2.
Thermal destruction was observed due to W/. Next, the relationship between the magnitude of the pressing force applied to the outer peripheral side surface of the target and the thermal destruction of the target will be explained.
まず、ターゲットとして大きさが直径９５側◇、厚み６
柵の酸化亜鉛系磁器を用い、このターゲットを第２図に
示した○リング１８を用いて陰極本体１１に固定し、外
的押圧手段であるボルト２１によりターゲットの外周側
面を押圧した。First, as a target, the size is on the diameter 95 side ◇, thickness 6
Using zinc oxide porcelain for the fence, this target was fixed to the cathode main body 11 using the circle ring 18 shown in FIG. 2, and the outer circumferential side of the target was pressed using a bolt 21 as an external pressing means.
陰極本体１１に７〜８Ｗ／地の高周波電力を加え、押圧
力を種々変えたときに熱的破壊が発生する状況を調べた
ところ下表に示すような結果を示した。A high frequency power of 7 to 8 W/ground was applied to the cathode body 11, and the situation in which thermal breakdown occurred when the pressing force was varied was investigated, and the results shown in the table below were obtained.
なお、ボルトは８個用い、ターゲットの外周外面に対し
等間隔の割合で固定した。Note that eight bolts were used and fixed at equal intervals to the outer circumferential surface of the target.
またスパッタ回教はターゲットの破壊が見られたときの
回数を示している。Spatter Islam also indicates the number of times the target was seen destroyed.
表に示した結果から明らかなように、ターゲットの外周
側面に機械的押圧力を加えない従来のものでは、１回の
スパッタ回数ですでにターゲットの破壊が見られたが、
機械的押圧力を加えることによってターゲットの破壊が
防止できることが判明した。As is clear from the results shown in the table, with the conventional method that does not apply mechanical pressure to the outer peripheral side of the target, destruction of the target was already observed after one sputtering cycle.
It has been found that target destruction can be prevented by applying mechanical pressure.
そして押圧力の適正範囲としては３〜８ｋ９／柵が実施
に当って有効であった。なお、押圧力が１０ｋ９／松を
越えると、ターゲット自体の破壊応力に抗しきれず、ボ
ルトによる締め付け時に割れの発生が認められた。また
この発明によれば、ターゲットが破壊したとしても、タ
ーゲットの外周側面に機械的押圧力を加えているため、
破損部分に隙間が発生せず、陰極がスパッタされるとい
う恐れがない。したがって、そのままの状態でスパッタ
を続けることができる。上記した実施例では夕−ゲット
としてセラミクスからなるものについて説明したが、こ
のほかガラス、合成樹脂などの金属以外のものについて
適用できることはもちろんである。The appropriate range of pressing force was 3 to 8 k9/fence, which was effective in practice. It should be noted that when the pressing force exceeded 10k9/pine, the target could not resist the destructive stress of itself, and cracking was observed when tightening with bolts. Furthermore, according to this invention, even if the target is destroyed, mechanical pressing force is applied to the outer peripheral side of the target.
There is no gap in the damaged area, and there is no fear that the cathode will be sputtered. Therefore, sputtering can be continued in that state. In the above-described embodiments, the getter is made of ceramics, but it is of course applicable to other materials other than metals, such as glass and synthetic resin.
また板状のターゲットの外周側面に機械的押圧力を加え
る手段としては上記したほか、たとえば帯状のベルトを
用い、このベルトの両端をボルトなどで締めつけること
により押圧力を加えるようにしてもよく、またボルト２
１の代わりに、バネ、スプリングなどによってターゲッ
トの外周側面に周囲から押圧力を加えてもよい。In addition to the above-mentioned means for applying mechanical pressing force to the outer circumferential surface of the plate-shaped target, for example, a band-shaped belt may be used, and the pressing force may be applied by tightening both ends of this belt with bolts, etc. Also bolt 2
Instead of 1, pressing force may be applied from the periphery to the outer circumferential side of the target using a spring or the like.
要はターゲットの外周側面に機械的押圧力を加える構成
とすればよい。さらにスパッタリング装置については高
周波二極スパッタリング装置に限らず、直流二極スパッ
タリング装置、直流三極スパッタリング装鷹などについ
ても適用でき、また被膜形成速度を上げるためマグネト
ロンを使用したもの、そのほか反応性スパッタリング、
バイアススパッタリングを行うものについても適用する
ことができる。In short, the structure may be such that mechanical pressing force is applied to the outer circumferential side surface of the target. Furthermore, sputtering equipment is not limited to high-frequency two-pole sputtering equipment, but can also be applied to DC two-pole sputtering equipment, DC three-pole sputtering equipment, etc. Also, in order to increase the film formation speed, it can be applied to equipment that uses a magnetron, as well as reactive sputtering,
It can also be applied to devices that perform bias sputtering.
以上この発明によれば、板状ターゲットの外周側面に周
囲からの機械的押圧力を加えることにより、被膜形成速
度を上げたりしたときに起因する熱的破壊や、ターゲッ
ト自体の性質による熱的破壊を防止しうろことが可能と
なり、スパッタリング中においてターゲットの破壊によ
り生じるコンタミネーションやターゲットの交換などの
不都合も生じない。As described above, according to the present invention, by applying mechanical pressure from the surroundings to the outer circumferential side surface of a plate-shaped target, thermal destruction caused by increasing the coating formation rate or thermal destruction due to the properties of the target itself can be prevented. This makes it possible to avoid problems such as contamination caused by destruction of the target during sputtering and the need to replace the target.
【図面の簡単な説明】
第１図は高周波二極スパッタリング装置の概略説明図、
第２図は第１図のうちこの発明の一実施例を示すスパッ
タリング用ターゲットの側断面図である。
１１−陰極本体、１７−ターゲット、１８一○リング、
１９−フランジ、２０，２１ーボルト。
篤１図繁２図[Brief explanation of the drawings] Fig. 1 is a schematic explanatory diagram of a high-frequency bipolar sputtering device;
FIG. 2 is a side sectional view of the sputtering target shown in FIG. 1, showing one embodiment of the present invention. 11- cathode body, 17- target, 18 one ring,
19 - flange, 20, 21 - bolt. Atsushi 1, Shang 2
Claims (1)
されており、 該ターゲツトはセラミクス、ガラス、樹
脂などの金属を除く板状のターゲツトよりなり、該ター
ゲツトの外周側面には周囲から外的押圧手段により機械
的押圧力が加えられてなるスパツタリング用ターゲツト
。1 A target is fixed to the cathode body of the sputtering device, and the target is made of a plate-shaped target other than metals such as ceramics, glass, or resin. A sputtering target that is applied with pressing force.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16472478A JPS6014833B2 (en) | 1978-12-26 | 1978-12-26 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16472478A JPS6014833B2 (en) | 1978-12-26 | 1978-12-26 | Target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5589471A JPS5589471A (en) | 1980-07-07 |
| JPS6014833B2 true JPS6014833B2 (en) | 1985-04-16 |
Family
ID=15798680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16472478A Expired JPS6014833B2 (en) | 1978-12-26 | 1978-12-26 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6014833B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4595482A (en) * | 1984-05-17 | 1986-06-17 | Varian Associates, Inc. | Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
| DE4020659C2 (en) * | 1990-06-29 | 1997-09-11 | Leybold Ag | Cathode sputtering device |
| JPH06108240A (en) * | 1992-09-30 | 1994-04-19 | Shibaura Eng Works Co Ltd | Sputtering source |
| US5529673A (en) * | 1995-02-17 | 1996-06-25 | Sony Corporation | Mechanically joined sputtering target and adapter therefor |
| CN112063977A (en) * | 2020-09-18 | 2020-12-11 | 长沙神弧离子镀膜有限公司 | High-scandium aluminum-scandium alloy target and target binding method thereof |
-
1978
- 1978-12-26 JP JP16472478A patent/JPS6014833B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5589471A (en) | 1980-07-07 |
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