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JPS601561B2 - Film thickness measurement method - Google Patents
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JPS601561B2 - Film thickness measurement method - Google Patents

Film thickness measurement method

Info

Publication number
JPS601561B2
JPS601561B2 JP7439079A JP7439079A JPS601561B2 JP S601561 B2 JPS601561 B2 JP S601561B2 JP 7439079 A JP7439079 A JP 7439079A JP 7439079 A JP7439079 A JP 7439079A JP S601561 B2 JPS601561 B2 JP S601561B2
Authority
JP
Japan
Prior art keywords
layer
sample
measured
film thickness
sealed container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7439079A
Other languages
Japanese (ja)
Other versions
JPS55166005A (en
Inventor
仁士 尾形
達生 増見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7439079A priority Critical patent/JPS601561B2/en
Publication of JPS55166005A publication Critical patent/JPS55166005A/en
Publication of JPS601561B2 publication Critical patent/JPS601561B2/en
Expired legal-status Critical Current

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  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)

Description

【発明の詳細な説明】 この発明は、非接触法による膜の厚さの測定法に関し、
更に詳しくはオプトアコーステイツク効果において試料
内に起こる温度の定常波により譲超される密封容器内の
圧力波の振幅が入射電磁波の変調周波数に依存すること
を利用して、膜厚を測定する膜厚測定法に関するもので
ある。
[Detailed Description of the Invention] The present invention relates to a method for measuring the thickness of a film by a non-contact method.
More specifically, the film thickness is measured using the fact that the amplitude of the pressure wave inside the sealed container, which is exceeded by the standing wave of temperature that occurs inside the sample in the opto-acoustic effect, depends on the modulation frequency of the incident electromagnetic wave. It concerns the measurement method.

オプトアコースティツク効果とは、気体で満たされた密
封容器内に設置された物質に、この物質が吸収する電磁
波に変調を加えて照射すると、密封容器内に電磁波変調
周波数の圧力波が生じる現象をいう。
The opto-acoustic effect is a phenomenon in which when a substance placed in a sealed container filled with gas is irradiated with modulated electromagnetic waves that the substance absorbs, pressure waves at the electromagnetic wave modulation frequency are generated inside the sealed container. say.

従来の膜厚測定法には、触針法、くり返し反射法、偏光
解析法、電気抵抗法、電気容量法、超音波法、うず電流
法等が知られている。
Conventional film thickness measurement methods include a stylus method, a repeated reflection method, an ellipsometry method, an electrical resistance method, a capacitance method, an ultrasonic method, an eddy current method, and the like.

しかし触針法の場合には破壊検査であり、偏光解析法で
は一義的に膜厚を決めることができないし又不透明物質
には適用できず、さらに他の電磁気的測定法では物質の
電磁気的性質により適用範囲が制限される等の欠点を有
している。要約すれば、一般に従来の膜厚測定法では破
壊検査であるか、あるいは非電気伝導性基板上の非電気
伝導性薄膜の測定が困難であるなど、適用範囲が著しく
制限される等の匁点を有している。この発明は上記欠点
を除去し、非破壊的に正確に広い範囲の物質に対して膜
厚を測定することができる膜厚測定法を提供することを
目的とする。
However, the stylus method is a destructive test, the ellipsometric method cannot unambiguously determine the film thickness and cannot be applied to opaque materials, and other electromagnetic measurement methods measure the electromagnetic properties of the material. However, it has disadvantages such as the limited scope of application. In summary, conventional film thickness measurement methods generally require destructive testing or have difficulty measuring non-electrically conductive thin films on non-electrically conductive substrates, which significantly limits the scope of application. have. It is an object of the present invention to provide a film thickness measuring method capable of eliminating the above drawbacks and non-destructively and accurately measuring the film thickness of a wide range of substances.

この発明に係る膜厚測定法では、被測定層と入射電磁波
を効率よく吸収する薄い吸収層とからなる2重層を試料
とし、この試料を気体(以下バックグラウンドガスと称
する)を封入した密封容器に被測定層がバックグラウン
ドガスに接し、かつ密封容器の盤面の一部を構成するよ
うに設置し、この試料に変調された電磁波を照射してそ
の時に発生する圧力波の振幅と、吸収層のみで同様に測
定された圧力波の振幅の比をとり、この値の対数値の電
磁波の変調周波数の平方根に対する勾配より膜厚を求め
ることを特徴とする。従って、本郷定法は非接触式であ
り、試料を破壊する恐れは全くなく、また試料の透明度
あるいは電磁気的性質等にも依存せず、従来の膜厚測定
法に比しきわめて広い適用範囲を有する膜厚測定法であ
る。以下この発明の実施例を図に基づいて説明する。
In the film thickness measurement method according to the present invention, a double layer consisting of a layer to be measured and a thin absorption layer that efficiently absorbs incident electromagnetic waves is used as a sample, and this sample is placed in a sealed container filled with gas (hereinafter referred to as background gas). The layer to be measured is placed in contact with the background gas and forms part of the panel surface of a sealed container, and the sample is irradiated with modulated electromagnetic waves to measure the amplitude of the pressure wave generated at that time and the absorption layer. The method is characterized in that the ratio of the amplitudes of pressure waves similarly measured using a chisel is taken, and the film thickness is determined from the slope of the logarithm of this value with respect to the square root of the modulation frequency of the electromagnetic wave. Therefore, the Hongo method is a non-contact method, there is no risk of destroying the sample, and it does not depend on the transparency or electromagnetic properties of the sample, so it has a much wider range of application than conventional film thickness measurement methods. This is a film thickness measurement method. Embodiments of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例を示すもので、1は試料、
2は密封容器で、その一撃面に電磁波入射窓3が形成さ
れ、他の壁面に音圧検出素子としてマイクロホン5が気
密性を保つように装着されている。
FIG. 1 shows an embodiment of the present invention, in which 1 is a sample;
Reference numeral 2 denotes a sealed container having an electromagnetic wave entrance window 3 formed on its striking surface, and a microphone 5 as a sound pressure detection element mounted on the other wall surface so as to maintain airtightness.

6は光源(例えばキセノンランプ、タングステンランプ
、あるいは各種のレーザ)、7は電磁波の変調(変調周
波数は10〜200肥z)を行うためのチョツパ、8は
マイクロホン5の出力を増幅する増幅器、9は前記チョ
ッパ7からの参照信号と増幅器8の出力を受け、信号の
振幅と位相を測定する、いわゆるロックインアンプで、
このアンプ9には図示されていないがレコーダが接続さ
れる。
6 is a light source (for example, a xenon lamp, a tungsten lamp, or various lasers); 7 is a chopper for modulating electromagnetic waves (the modulation frequency is 10 to 200 Hz); 8 is an amplifier for amplifying the output of the microphone 5; is a so-called lock-in amplifier that receives the reference signal from the chopper 7 and the output of the amplifier 8, and measures the amplitude and phase of the signal.
Although not shown, a recorder is connected to this amplifier 9.

なお、4は入射窓3部の気密性を保つための○リングで
ある。また、密封容器2にはバックグラウンドガスが封
入されている。前記試料1は第2図に示すように被測定
層laと吸収層lbとからなり、第1図または第3図に
示すようにその被測定層laがバックグラウンドガスと
接し、かつ容器2の壁面の一部を構成するように、例え
ば接着テープによる貼付等によって入射窓3内面に取付
けるか、あるいは第4図に示すように入射窓3と対向す
る壁面に取付ける。
Note that 4 is a circle for keeping the 3 parts of the entrance window airtight. Further, the sealed container 2 is filled with a background gas. The sample 1 consists of a layer to be measured la and an absorption layer lb as shown in FIG. It is attached to the inner surface of the entrance window 3 by, for example, pasting with adhesive tape so as to constitute a part of the wall surface, or it is attached to the wall surface facing the entrance window 3 as shown in FIG.

吸収層lbは変調された電磁波ビームを吸収して発熱し
、被測定層laの吸収層lbと接する面に周期的な温度
変化を起こさせる役割を持つ。この吸収層lbは、例え
ばカーボンブラックバインダー樹脂溶液の塗布等により
形成される。次に上記測定系の動作について説明する。
The absorption layer lb absorbs the modulated electromagnetic wave beam, generates heat, and has the role of causing periodic temperature changes on the surface of the layer la to be measured that is in contact with the absorption layer lb. This absorption layer lb is formed, for example, by applying a carbon black binder resin solution. Next, the operation of the above measurement system will be explained.

変調された電磁波ビーム6aを試料1に照射すると、吸
収層lbに電磁波が吸収され、そのエネルギーは吸収層
lb内で熱エネルギーに変換されて吸収層lbの温度が
上昇する。今、仮に試料1が吸収層lbのみで構成され
ているものとすると、上記の熱エネルギーは吸収層lb
と接するバックグラウンドガスに熱伝導により伝達され
、ガスの周期的な温度上昇を引き起こす。
When the sample 1 is irradiated with the modulated electromagnetic wave beam 6a, the electromagnetic wave is absorbed by the absorbing layer lb, and the energy is converted into thermal energy within the absorbing layer lb, increasing the temperature of the absorbing layer lb. Now, if sample 1 is composed of only the absorbing layer lb, the above thermal energy will be absorbed by the absorbing layer lb.
The heat is transferred by conduction to the background gas in contact with the gas, causing a periodic temperature rise in the gas.

この場合、バックグラウンドガスが一定体積のため、圧
力波が発生する。入射電磁波が角周波数ので変調されて
いるとすると、吸収層lbのバックグラウンドガスと接
する側の表面での温度の変動成分8(t)は8(t)ニ
80COS(のt−ご) ,..,..,..mによ
り表わされる。
In this case, pressure waves are generated due to the constant volume of the background gas. Assuming that the incident electromagnetic wave is modulated by the angular frequency, the temperature fluctuation component 8(t) at the surface of the absorbing layer lb in contact with the background gas is 8(t)d80COS(t-g), . .. 、. .. 、. .. It is represented by m.

ただし、8oは吸収層lbの吸収係数が充分大きければ
、吸収層lb自体の熱伝導率と地熱によって決まる値で
あり、ごは初期位相角である。また、吸収層表面温度の
変動成分の振幅ooと密封容器2内の圧力変動の振幅Q
との間にはQ=rP。
However, 8o is a value determined by the thermal conductivity of the absorption layer lb itself and geothermal heat if the absorption coefficient of the absorption layer lb is sufficiently large, and 8o is the initial phase angle. In addition, the amplitude oo of the fluctuation component of the absorption layer surface temperature and the amplitude Q of the pressure fluctuation inside the sealed container 2
Q=rP between.

8。8.

ノ2 1gagT。 ………{21なる関係があ
る。ただし、Po、Toは密封容器2内の圧力と温度、
r及びagはバックグラウンドガスの定圧比熱と定客比
熱の比及び熱拡散率、1gは密封容器2の電磁波入射方
向の長さである。この‘2)式より密封容器2内の条件
が定まると試料表面温度と圧力波のそれぞれの振幅が比
例関係にあることがわかる。ごて、試料【1}が被測定
層laと吸収層lbの2層よりなる場合を考える。
No2 1gagT. ......{21 There is a relationship. However, Po and To are the pressure and temperature inside the sealed container 2,
r and ag are the ratio of the constant pressure specific heat to the constant volume specific heat of the background gas and the thermal diffusivity, and 1g is the length of the sealed container 2 in the electromagnetic wave incident direction. From this equation '2), it can be seen that when the conditions inside the sealed container 2 are determined, there is a proportional relationship between the sample surface temperature and the amplitude of each pressure wave. Let us consider the case where the sample [1} consists of two layers: a layer to be measured la and an absorbing layer lb.

被測定層laと吸収層lbが接しているため、被測定層
laの吸収層lb側の表面温度はやはり‘1}式により
示される。この温度の波動は、被測定層la内を伝播し
、反対側の表面でバックグラウンドガスを加熱し、試料
1が吸収層lbのみの時と同様に密封容器2内に圧力波
を生じさせる。この時バックグラウンドガスと接する被
測定層laの表面の温度8s(x、t)は、被測定層l
aの厚さをx、熱曲広散能をasとすると、8S(X、
t)ニ808Xp(一aS文)COS(のt−aSX−
ご) ……………{3}の形に表わさ
れる。
Since the layer la to be measured and the absorbing layer lb are in contact, the surface temperature of the layer la to be measured on the side of the absorbing layer lb is also expressed by the equation '1}. This temperature wave propagates within the layer la to be measured, heats the background gas on the opposite surface, and generates a pressure wave within the sealed container 2 in the same way as when the sample 1 consists of only the absorbing layer lb. At this time, the temperature 8s (x, t) of the surface of the layer to be measured la in contact with the background gas is the layer to be measured l
If the thickness of a is x, and the thermodynamic diffusion power is as, then 8S(X,
t) Ni808Xp (1aS sentence) COS (t-aSX-
) ……………Represented in the form of {3}.

なお、asは熱拡散率Qsによりas=(■/2Qs)
1/2で定義される。このことから‘1)式と‘3’式
を比較することにより8s(x、t)とひ(t)の振幅
の比R=OS(x、t)/8(t) の対数値は ムhR=A−aSX=A−(多馬)1/2X‐.‐.‐
‐(4)で示される。
In addition, as is thermal diffusivity Qs, as=(■/2Qs)
Defined as 1/2. From this, by comparing equations '1) and '3', the logarithm of the ratio of the amplitudes of 8s(x, t) and h(t), R=OS(x, t)/8(t), is hR=A-aSX=A-(Tama)1/2X-. -. -
- Indicated by (4).

ここにA=・n{m善意≠云書竺;)△} である。Here A=・n{mgoodwill≠云書竺;)△} It is.

従って、lnRとの1/2の関係は直線関係となり、既
知の熱拡散率Qsの値を用いて直線の勾配から膜厚xを
求めることができる。
Therefore, the 1/2 relationship with lnR is a linear relationship, and the film thickness x can be determined from the slope of the straight line using the known value of the thermal diffusivity Qs.

次に本発明による高分子フィルムの測定結果について述
べる。
Next, the measurement results of the polymer film according to the present invention will be described.

即ち、カーボンブラック35%を、バインダー樹脂ポリ
ビニルブチラール65%と共にエチルアルコール適量に
溶解し、5時間ボールミルで蝿拝した塗料を、予めうず
電流法により膜厚を求めた(6山川)ポリ塩化ビニル樹
脂に塗布し、カーボンーブチラール樹脂層を吸収層lb
、ポリ塩化ビニル樹脂層を被測定層laとした2重層の
試料を作製し、これを第4図に示すように設置し、光源
6にキセノンランプを用いて白色光を入射し、圧力波の
振幅の膜厚依存性を周波数をパラメータとして測定した
。なお、吸収層lbの厚さは5〜loAmである。この
ようにして測定した値を予め吸収層lbのみの基準とな
る試料で得られた振幅で除することによって求めたR値
の周波数の平方根依存性を第5図に示す。
That is, 35% carbon black was dissolved in an appropriate amount of ethyl alcohol together with 65% polyvinyl butyral binder resin, and the coating was milled in a ball mill for 5 hours, and the film thickness was determined in advance by the eddy current method (6 Yamakawa) Polyvinyl chloride resin. The carbon-butyral resin layer is applied to the absorbent layer lb.
A double-layer sample was prepared with a polyvinyl chloride resin layer as the layer to be measured la, and this was installed as shown in Figure 4. White light was incident on the light source 6 using a xenon lamp, and pressure waves were detected. The dependence of amplitude on film thickness was measured using frequency as a parameter. Note that the thickness of the absorption layer lb is 5 to loAm. FIG. 5 shows the dependence of the R value on the square root of frequency, which was obtained by dividing the value thus measured by the amplitude previously obtained with the reference sample of only the absorbing layer lb.

第5図よりR値と変調角周波数の平方根とは直接関係に
あり、その額きは0.013である。この値と、別に求
めたポリ塩化ビニル樹脂の熱拡散率の値1.07×10
‐3の・sec‐1を用いて、膜厚を求めると6.0ム
肌となり、うず電流法により求めた値と非常によい一致
が見られた。この高分子フィルムの膜厚測定の例におい
ては、吸収層としてカーボンを樹脂に分散させたフィル
ムを用いたが、たとえば金属等の基板上に存在する薄い
皮膜の厚さを測定する場合には、基板そのものを吸収層
として用いればよい。
From FIG. 5, there is a direct relationship between the R value and the square root of the modulation angular frequency, and the value is 0.013. This value and the separately determined thermal diffusivity value of polyvinyl chloride resin 1.07×10
The film thickness was found to be 6.0 μm using sec-1 of -3, which was in very good agreement with the value determined by the eddy current method. In this example of measuring the film thickness of a polymer film, a film in which carbon was dispersed in a resin was used as the absorption layer. However, when measuring the thickness of a thin film existing on a substrate such as a metal, for example, The substrate itself may be used as the absorption layer.

またこの発明によれば、従来測定するのが困難であった
油膜の厚さの測定等、固体上の液体状皮膜の厚さについ
ても測定することが可能である。以上のように本発明は
従来の各種膜厚測定法に比し、非接触かつ非破壊検査で
あること、および適用範囲が著しく広いこと等の利点が
ある。第6図はこの発明の他の実施例を示すもので、原
理的には上記実施例と同様に‘4’式を使うものである
が、電磁波吸収層のみからなる基準となる参照用試料と
吸収層及び被測定層からなる試料を、同性能の音圧検出
器を備えた同形、同寸法の2つの密封容器の敦料取付部
に別々に装着し、これらに電磁波を照射した場合の2つ
の音圧検出器の出力信号強度の比の対数値を測定するよ
うにしている。
Further, according to the present invention, it is also possible to measure the thickness of a liquid film on a solid, such as the thickness of an oil film, which has been difficult to measure in the past. As described above, the present invention has advantages over various conventional film thickness measurement methods, such as non-contact and non-destructive testing and a significantly wider range of application. FIG. 6 shows another embodiment of the present invention, in which the '4' formula is used in principle as in the above embodiment, but a reference sample consisting only of an electromagnetic wave absorption layer and a 2. Samples consisting of an absorbing layer and a layer to be measured are separately attached to the material attachment parts of two sealed containers of the same shape and size equipped with sound pressure detectors of the same performance, and electromagnetic waves are irradiated to them. The logarithm of the ratio of the output signal intensities of the two sound pressure detectors is measured.

第7図において、1,101は試料、2,102は密封
容器、3,103は電磁波入射窓、4,104は○リン
グ、5,105はマイクロホン、6は光源、7はチョツ
パ、8,108は増幅器、9.109はロックインアン
プ、10,15は演算回路、11はX一Yレコーダ、1
2はビームスプリッタ、13,113は凹面鏡、14は
スキヤナであり、前記チョツパ7により変調された電磁
波ビーム6aはビ−ムスプリッタ12で分割されて光ビ
ーム6b,6cとなり、凹面鏡13,113により容器
2,102の入射窓3,103に集光される。
In Figure 7, 1,101 is a sample, 2,102 is a sealed container, 3,103 is an electromagnetic wave entrance window, 4,104 is a circle, 5,105 is a microphone, 6 is a light source, 7 is a chopper, 8,108 is an amplifier, 9.109 is a lock-in amplifier, 10 and 15 are arithmetic circuits, 11 is an X-Y recorder, 1
2 is a beam splitter, 13 and 113 are concave mirrors, and 14 is a scanner. The electromagnetic wave beam 6a modulated by the chopper 7 is split by the beam splitter 12 into light beams 6b and 6c, and the concave mirrors 13 and 113 separate the electromagnetic wave beam 6a into a container. The light is focused on the entrance window 3,103 of 2,102.

前記試料1は吸収層lbと被測定層laからなり、また
試料101は吸収層lbのみからなる。音圧検出器とし
てのマイクロホン5,105の出力信号は増幅器8,1
08で増幅された後、ロックインアンプ9,109によ
り電磁波変調周波数と同じ周波数成分をもつ信号だけが
検出され、増幅される。
The sample 1 consists of an absorbing layer lb and a layer to be measured la, and the sample 101 consists only of an absorbing layer lb. The output signal of the microphone 5, 105 as a sound pressure detector is transmitted to the amplifier 8, 1.
After being amplified in step 08, only signals having the same frequency component as the electromagnetic wave modulation frequency are detected and amplified by lock-in amplifiers 9 and 109.

この後演算回路10の入力となり、2つのマイクロホン
5,105の出力信号強度の比の対数値が求められ、演
算出力10aが×−Yレコーダ11のY軸の入力となる
。一方、チョッパ7の変調周波数はスキャナ14により
時間の関数として連続的に掃引され、参照信号7aはロ
ックィンアンプ9,109の入力となる。
Thereafter, it becomes an input to the arithmetic circuit 10, where the logarithm value of the ratio of the output signal intensities of the two microphones 5 and 105 is obtained, and the arithmetic output 10a becomes the Y-axis input to the x-Y recorder 11. On the other hand, the modulation frequency of the chopper 7 is continuously swept as a function of time by the scanner 14, and the reference signal 7a becomes an input to the lock-in amplifier 9,109.

また、スキャナ14の電圧出力は演算回路15によりそ
の平方根値に変換された後、その出力信号15aがX−
Yレコーダ11のX軸の入力となる。X−Yレコーダ1
1は×、Y軸への入力に応じて動作し、‘41式の関係
が記録される。この記録の直線の勾配を実測することに
より、直ちに濃厚を求めることができる。また、密封容
器2,102を圧力−電気変換材料により構成して青圧
検出器を兼ねるようにしてもよい。
Further, the voltage output of the scanner 14 is converted into its square root value by the arithmetic circuit 15, and then the output signal 15a is
This becomes the X-axis input of the Y recorder 11. X-Y recorder 1
1 operates according to the input to the x and Y axes, and the relationship of the '41 formula is recorded. By actually measuring the slope of this recorded straight line, the concentration can be immediately determined. Further, the sealed container 2, 102 may be made of a pressure-electricity converting material so that it also serves as a blue pressure detector.

以上のようにこの発明によれば、被測定層の一面に吸収
層を設け、この吸収層に変調された電磁波を照射し、そ
の結果発熱を起こさせ、この温度の波動が他面に伝播さ
れるときに生じる振幅の減衰の大きさが熱拡散率と波動
伝播の距離すなわち被測定層の厚さと周波数に依存する
ことより、周波数を変化させて被測定層の厚さを求める
ことができる。
As described above, according to the present invention, an absorption layer is provided on one surface of the layer to be measured, a modulated electromagnetic wave is irradiated to this absorption layer, and as a result, heat is generated, and this temperature wave is propagated to the other surface. Since the magnitude of the amplitude attenuation that occurs when the wave propagates depends on the thermal diffusivity and the distance of wave propagation, that is, the thickness of the layer to be measured and the frequency, the thickness of the layer to be measured can be determined by changing the frequency.

また、温度の測定は、被測定面が密封容器内のバックグ
ラウンドガスに接してこのガスを加熱し、その結果起こ
る圧力変動を測定することによって可能であり、従って
非接触かつ非破壊的に膜厚を測定することができる。更
に、単体のフィルムから固体上の皮膜および液体状皮膜
に至るまで、幅広い範囲で膜厚を精度よく測定すること
ができる利点がある。
Temperature can also be measured by heating this gas by bringing the surface to be measured into contact with a background gas in a sealed container and measuring the resulting pressure fluctuations, thus allowing non-contact and non-destructive measurement of the membrane. Thickness can be measured. Furthermore, it has the advantage of being able to accurately measure film thicknesses over a wide range of applications, from single films to films on solids and liquid films.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明に係る熱拡散率測定装置の一実施例を
示す測定系のブロック図、第2図は試料の構成を示す側
面図、第3図及び第4図は密封容器への試料取付状態を
説明するための断面図、第5図は吸収層−被測定層から
の信号強度と吸収層のみの信号強度の比と変調角周波数
との関係を示す特性図、第6図はこの発明の他の実施例
を示す測定系のブロック図である。 1,101・・・・・・試料、la・・・・・・被測定
層、lb・・・・・・吸収層、2,102・・・・・・
密封容器、3,103・・・・・・電磁波入射窓、5,
105・・・・・・マイクロホン、6・・・・・・光源
、7・・・・・・チョッパ、8,108・・・・・・増
幅器、9,109・・・・・・ロックィンアンプ、10
,15……演算回路、11・・・・・・X−Yレコーダ
、12……ビームスプリツタ、13,113…・・・凹
面鏡。 なお、図中同一符号は同一または相当部分を示す。第1
図 第2図 第3図 第4図 第5図 第6図
Fig. 1 is a block diagram of a measurement system showing an embodiment of the thermal diffusivity measuring device according to the present invention, Fig. 2 is a side view showing the structure of the sample, and Figs. 3 and 4 are the samples placed in a sealed container. Figure 5 is a cross-sectional view to explain the installation state, Figure 5 is a characteristic diagram showing the relationship between the ratio of the signal strength from the absorption layer to the layer to be measured and the signal strength of the absorption layer only, and the modulation angular frequency. FIG. 3 is a block diagram of a measurement system showing another embodiment of the invention. 1,101...sample, la...layer to be measured, lb...absorption layer, 2,102...
Sealed container, 3,103... Electromagnetic wave incidence window, 5,
105...Microphone, 6...Light source, 7...Chopper, 8,108...Amplifier, 9,109...Lock-in amplifier , 10
, 15... Arithmetic circuit, 11... X-Y recorder, 12... Beam splitter, 13, 113... Concave mirror. Note that the same reference numerals in the figures indicate the same or corresponding parts. 1st
Figure 2 Figure 3 Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】[Claims] 1 被測定層と入射電磁波を効率よく吸収する吸収層と
からなる2重層を試料とし、この試料を所要の気体を封
入した密封容器に上記被測定層が上記気体に接し、かつ
上記密封容器の壁面の一部を構成するように設置し、上
記試料に変調された電磁波を照射して、発生する圧力波
の振幅と、吸収層のみで同様に測定された圧力波の振幅
との比をとり、この値の対数値の電磁波の変調周波数の
平方根に対する勾配から膜厚を求めることを特徴とする
膜厚測定法。
1. A double layer consisting of a layer to be measured and an absorbing layer that efficiently absorbs incident electromagnetic waves is used as a sample, and the sample is placed in a sealed container containing a required gas, and the layer to be measured is in contact with the gas, and the layer in the sealed container is The sample is installed so as to form part of the wall surface, and the sample is irradiated with modulated electromagnetic waves, and the ratio of the amplitude of the generated pressure wave to the amplitude of the pressure wave similarly measured only on the absorption layer is calculated. , a film thickness measurement method characterized by determining the film thickness from the slope of the logarithm value of this value with respect to the square root of the modulation frequency of the electromagnetic wave.
JP7439079A 1979-06-12 1979-06-12 Film thickness measurement method Expired JPS601561B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7439079A JPS601561B2 (en) 1979-06-12 1979-06-12 Film thickness measurement method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7439079A JPS601561B2 (en) 1979-06-12 1979-06-12 Film thickness measurement method

Publications (2)

Publication Number Publication Date
JPS55166005A JPS55166005A (en) 1980-12-24
JPS601561B2 true JPS601561B2 (en) 1985-01-16

Family

ID=13545794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7439079A Expired JPS601561B2 (en) 1979-06-12 1979-06-12 Film thickness measurement method

Country Status (1)

Country Link
JP (1) JPS601561B2 (en)

Also Published As

Publication number Publication date
JPS55166005A (en) 1980-12-24

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