Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6016700B2 - Hot cathode electron source device - Google Patents
[go: Go Back, main page]

JPS6016700B2 - Hot cathode electron source device - Google Patents

Hot cathode electron source device

Info

Publication number
JPS6016700B2
JPS6016700B2 JP53034466A JP3446678A JPS6016700B2 JP S6016700 B2 JPS6016700 B2 JP S6016700B2 JP 53034466 A JP53034466 A JP 53034466A JP 3446678 A JP3446678 A JP 3446678A JP S6016700 B2 JPS6016700 B2 JP S6016700B2
Authority
JP
Japan
Prior art keywords
hot cathode
temperature
sample
cathode
electron source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53034466A
Other languages
Japanese (ja)
Other versions
JPS54127272A (en
Inventor
康示 斉藤
信二郎 片桐
尚武 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP53034466A priority Critical patent/JPS6016700B2/en
Priority to NL7902266A priority patent/NL7902266A/en
Priority to DE19792911741 priority patent/DE2911741A1/en
Priority to GB7910461A priority patent/GB2019172A/en
Publication of JPS54127272A publication Critical patent/JPS54127272A/en
Publication of JPS6016700B2 publication Critical patent/JPS6016700B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/24Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/242Filament heating power supply or regulation circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Microwave Tubes (AREA)

Description

【発明の詳細な説明】 本発明は電子顕微鏡およびその類似装置における仏B6
熱陰極電子源装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron microscope and its similar devices.
The present invention relates to a hot cathode electron source device.

La&熱陰極電子源はタングステン・ヘャピン熱陰極電
子源にくらべ高い輝度(5〜1M音)と寿命が長いとい
う特長があるため、使用雰囲気が高真空(10‐6on
以上)でなければならず、装置が高価であるという短所
があるにもか)わらず、一部で使用されて来た。
La & hot cathode electron sources have higher brightness (5-1M sound) and longer life than tungsten/hairpin hot cathode electron sources, so they can be used in a high vacuum (10-6 on) atmosphere.
Despite the disadvantage that the equipment is expensive, it has been used in some cases.

従来LaB熱陰極は一般に1800o〜190び kの
固定温度で用いられており、寿命も100〜数10独特
間とタングステン・ヘヤピン熱陰極とくらべると長いが
、高真空雰囲気で使用する熱陰極としては寿命が短かく
普及を妨げる原因となっていた。本発明の目的は、試料
上に照射する電子線ビームの径に対応してLaB6熱陰
極の加熱温度を可変することにより、実用上に支障をき
たさずいB6熱陰極の長寿命化を計ることにある。
Conventional LaB hot cathodes are generally used at a fixed temperature of 1800° to 190°K, and have a lifespan of 100 to several tens of degrees, which is longer than tungsten hairpin hot cathodes, but as a hot cathode used in a high vacuum atmosphere, Their short lifespan hindered their widespread use. The purpose of the present invention is to extend the life of the B6 hot cathode without causing any practical problems by varying the heating temperature of the LaB6 hot cathode in accordance with the diameter of the electron beam irradiated onto the sample. be.

図1に走査電子顕微鏡の概略説明図を示す。FIG. 1 shows a schematic explanatory diagram of a scanning electron microscope.

熱陰極1より照射された電子線2は、電子レンズ3,4
で集東され、試料5上に電子線2のスポットサイズを所
要の大きさに縮少し照射する。又偏向コイル6,7は上
記縮少した電子線スポットを試料5上を平面に走査させ
る。試料5上に照射された電子線スポットは、2次電子
等試料の形上村料に関する情報を発生する。検出器10
、増中器11で検出・増中された信号をブラウン管12
のグリッドーこ導入し、ブラウン管12の電子線13を
制御し、ブラウン管面の蛍光体の輝度を変化させる。ブ
ラウン管12の偏向コイル8は、偏向コイル6,7と同
期して偏向電源9で駆動される。ブラウン管上に表示さ
れる試料像は、試料5上を走査する電子線1の走査中そ
と、ブラウン管面を走査する電子線13の中Lの比L/
そに拡大される。走査電子顕微鏡及びその類似装置にお
いては高倍率像を観察する能力、即ち分解能が重要な性
能の一つであり、分解能は試料上に照射する電子線のス
ポットの大きさにより制限される。
The electron beam 2 irradiated from the hot cathode 1 passes through electron lenses 3 and 4.
The spot size of the electron beam 2 is reduced to a required size and irradiated onto the sample 5. Further, the deflection coils 6 and 7 cause the reduced electron beam spot to scan the sample 5 in a plane. The electron beam spot irradiated onto the sample 5 generates information about the shape of the sample, such as secondary electrons. Detector 10
, the signal detected and amplified by the intensifier 11 is sent to the cathode ray tube 12.
A grid is introduced, the electron beam 13 of the cathode ray tube 12 is controlled, and the brightness of the phosphor on the cathode ray tube surface is changed. The deflection coil 8 of the cathode ray tube 12 is driven by a deflection power source 9 in synchronization with the deflection coils 6 and 7. The sample image displayed on the cathode ray tube is a ratio L/
It will be expanded. In scanning electron microscopes and similar devices, the ability to observe high-magnification images, that is, the resolution, is one of the important performances, and the resolution is limited by the size of the spot of the electron beam irradiated onto the sample.

スポットの大きさが小ささければ、試料上の走査中〆を
小さくしても像質は悪くないならないが、スポットの大
きさが大きいと走査中を大きくしなければ像がボケ、像
が不鮮明になり倍率を高くすることの意味がなくなる。
すなわち、分解能をあげるためにはスポットの大きさを
出来るだけ小さくすることが望ましいが、一方試料に照
射される電子線量はスポットの大きさに比例して減少す
る。今図2に示すように試料に照射される電流を1凶、
電子源の輝度をB(A/の.str)とすると、試料5
より絞り15を見込む半角asが変らないとすれば、電
子源の径d。
If the spot size is small, the image quality will not be bad even if the scanning limit on the sample is made small, but if the spot size is large, the image will become blurry and unclear unless the scanning limit is made large. , so there is no point in increasing the magnification.
That is, in order to improve the resolution, it is desirable to make the spot size as small as possible, but on the other hand, the amount of electron beam irradiated to the sample decreases in proportion to the spot size. Now, as shown in Figure 2, the current irradiated to the sample is
If the brightness of the electron source is B (A/.str), sample 5
Assuming that the half angle as looking into the aperture 15 does not change, the diameter d of the electron source.

と試料上の電子線スポット経dSの比M=d。/dsと
試料に照射される電流lsとの間には次の関係がある。
IS=B汀(OS/M)2・汀d客ノ4 =m2/必携d奪=KBdき………………{1}但し、
K=の2 0奪/4M=d。
and the electron beam spot diameter dS on the sample, the ratio M=d. The following relationship exists between /ds and the current ls applied to the sample.
IS = B (OS/M) 2, 4 = m2 / must-have = KBd......{1} However,
K=20 steals/4M=d.

/dS=8S/8。立体角=竹(1一cos8);竹8
2 ‘1}式より、試料上の電子線のスポット径が小さくな
れば、試料に照射される電流が減少することがわかる。
/dS=8S/8. Solid angle = bamboo (11 cos8); bamboo 8
2'1} formula shows that as the spot diameter of the electron beam on the sample becomes smaller, the current irradiated to the sample decreases.

このためスポット径を小さくしてゆくと、2次電子等の
信号量が減少し、検出器10、増中器11で発生する雑
音とのS/Nが悪くなり、スポット径がd・さくなった
にもかかわらず、像質が悪く分解能が良くならない結果
となる。このためタングステン・ヘャピン形熱陰極では
、一般に、電子線のスポット径を50〜100A、試料
電流を2〜5×10‐12A程度に設定している。試料
電流は、電子線源の輝度に比例することからタングステ
ン・ヘャピン形にくらべ、数倍輝度の高い凶B6熱陰極
を用いると、信号量も増し、試料に照射する電子線のス
ポット径を小さくすることも可能であり、高分解館化が
可能となる。しかし山B6熱陰極の使用にあたっては、
この熱陰極附近の真空度が10‐6Tomよりも良いこ
とが必要である。このように高真空を維持するためにも
、又装置の稼動率を高めるためにも、熱陰極の寿命を出
来るだけ長くし、上記陰極の交換のため大気にさらすひ
ん度を出来るだけ少くすることが必要である。又LaB
熱陰極は高価であり、これも長寿命化が望まれる一因で
もある。いB6熱陰極の寿命は、いB6の蒸発速度によ
ってさまる。
For this reason, as the spot diameter is made smaller, the amount of signals such as secondary electrons decreases, the S/N ratio with the noise generated in the detector 10 and intensifier 11 becomes worse, and the spot diameter becomes smaller by d. However, the result is poor image quality and poor resolution. For this reason, in a tungsten hairpin type hot cathode, the spot diameter of the electron beam is generally set to 50 to 100 A, and the sample current is set to about 2 to 5 x 10-12 A. Since the sample current is proportional to the brightness of the electron beam source, using a B6 hot cathode, which has several times the brightness compared to a tungsten hairpin type, increases the signal amount and reduces the spot diameter of the electron beam irradiating the sample. It is also possible to do this, making it possible to create a high-resolution library. However, when using the Yama B6 hot cathode,
It is necessary that the degree of vacuum near this hot cathode is better than 10-6 Tom. In order to maintain this high vacuum and increase the operating rate of the equipment, it is important to extend the life of the hot cathode as much as possible and minimize the frequency of exposure to the atmosphere for replacement of the cathode. is necessary. Also LaB
Hot cathodes are expensive, which is also one of the reasons why a longer life is desired. The life of the hot B6 hot cathode is determined by the evaporation rate of the hot B6.

蒸発速度と熱陰極温度をの関係の一例を、図3に170
00 k時の蒸発速度を基準として線Vであらわしてい
る。又輝度と陰極温度との関係を線Bで示している。走
査電子顕微鏡及びその類似装置において試料像を高倍率
で観察する場合、高輝度の電子源を用いることは有用で
ある。
An example of the relationship between evaporation rate and hot cathode temperature is shown in Figure 3.
The evaporation rate at 00 k is shown as a line V. Line B shows the relationship between brightness and cathode temperature. When observing specimen images at high magnification in scanning electron microscopes and similar devices, it is useful to use a high-brightness electron source.

しかし通常観察にもちいられる数千倍以下の倍率におい
ては、従来のタングステン。へャピン形の熱陰極でも充
分な試料照射電流が得られている。図1のブラウン管の
偏向中Lを100側とし、50,00の苦から1,00
ぴ苔迄の試料上を偏向する中をそ、ブラウン管の解像度
を1/1500とし、これに見合ったスポット径ds(
即ちdsノ〆=1/1500)及び高倍率(50,00
0倍)時のスポット径50Aの時の試料電流を基準とし
た、各倍率におけるスポット径の時の試料電流比を求め
ると表1のようになる。
However, at magnifications of several thousand times or less, which are normally used for observation, conventional tungsten. Sufficient sample irradiation current was obtained even with a pin-shaped hot cathode. The deflection L of the cathode ray tube in Fig. 1 is set to the 100 side, and from 50,00 to 1,00
The resolution of the cathode ray tube was set to 1/1500, and the spot diameter ds (
That is, ds=1/1500) and high magnification (50,00
Table 1 shows the sample current ratio when the spot diameter is at each magnification, based on the sample current when the spot diameter is 50 A at the time of 0x magnification.

表1 表1に示す通り50,000倍での試料電流を1とする
と、5,00の鞠こおいては6.7倍の試料電流が得ら
れる。
Table 1 As shown in Table 1, if the sample current at 50,000 times is 1, then at 5,00 times the sample current is obtained 6.7 times.

したがって5,00折音観察する場合には、50,00
0倍での条件より輝度を1/6・7に下げて観察しうる
。5,00M部こおいては、熱電子へャピンフイラメン
トの輝度は3〜5×iびA/の。
Therefore, if you want to observe 5,000 folds, 50,00
It can be observed with the brightness reduced to 1/6/7 compared to the 0x condition. In a 5,00M section, the brightness of the thermionic hairpin filament is 3 to 5 x A/.

strで十分であることが従来の装置から判明している
ため、5,00ぴ音の陰極温度は図3から17000
kで良いことがわかる。この場合の蒸発速度は「200
0o kに比較すれば1ノ100、】90びkと比較し
ても1ノ30となり寿命は100倍〜3M苔とのびるこ
とがわかる。さらに、50,000倍で観察する場合に
、5,00ぴ音で観察した時と同一の試料電流を得るた
めには、3〜5×1び×6.7字2〜3×1ぴA/の.
sVの輝度が必要となり、図3から1950〜2000
0 kの陰極温度が必要であることがわかる。従来の熱
電子へャピンフィラメントを用いる場合は3×1びA/
地.strが限界であったことから50,00併苔での
観察においては、従来の4〜雌音の輝度が得られ、明る
いS/Nの良い像観察が可能となる。又10,00の割
こおいては、50,000倍の1/1.7の試料電流で
あり、2〜3×10−6/1.7三1〜1.7×1ぴA
/洲.strで良く、1850〜19000kの陰極温
度となり、約10ぴk程度下げることができ、寿命は約
5倍にのびる。尚表1において、スポットの蚤dsと試
料電流の関係は、dsの2乗に比例するため、50Aの
試料電流を1とすると130Aにおいては(130/5
0)2=6.7倍となる。従来いB6熱陰極は最高倍率
時に必要な輝度が得られる温度で常時使用されてきた。
Since it is known from the conventional equipment that str is sufficient, the cathode temperature of 5,00 pm is 17000 pm from Figure
It turns out that k is good. The evaporation rate in this case is “200
If you compare it with 0ok, it will be 1/100, and if you compare it with ]90k, it will be 1/30, which means that the lifespan will be 100 times longer than 3M moss. Furthermore, when observing at 50,000 times magnification, in order to obtain the same sample current as when observing at 5,00 pm, it is necessary to /of.
A brightness of sV is required, and from Figure 3 it is 1950-2000.
It can be seen that a cathode temperature of 0 k is required. When using conventional thermionic hair pin filament, 3 x 1 A/
Earth. Since the str was at the limit, in observation with 50,000 yen moss, the conventional brightness of 4 to 100 g was obtained, making it possible to observe a bright image with a good S/N ratio. Also, when dividing by 10,00, the sample current is 1/1.7 of 50,000 times, which is 2 to 3 x 10-6/1.731 to 1.7 x 1 pA.
/Su. str is sufficient, the cathode temperature is 1850 to 19000K, which can be lowered by about 10pK, and the life span is extended about 5 times. In Table 1, the relationship between the spot flea ds and the sample current is proportional to the square of ds, so if the sample current of 50A is 1, then at 130A it is (130/5
0)2=6.7 times. Conventional B6 hot cathodes have always been used at a temperature that provides the necessary brightness at maximum magnification.

90%以上の使用ひん度がある。It is used more than 90% of the time.

10,00川音以下の倍率の時に陰極温度を適正温度(
その時に必要なビーム径・試料電流を得るのに必要最低
限の温度)にセット出来る機構を有しておればなんら性
能の低下を伴なわずに10〜数1針音の長寿命化が可能
となる。
When the magnification is 10,00 or less, the cathode temperature is set to the appropriate temperature (
If you have a mechanism that can set the temperature to the minimum temperature necessary to obtain the required beam diameter and sample current at that time, it is possible to extend the lifespan of 10 to several 1 needle sounds without any deterioration in performance. becomes.

図4なし、し図6はそれぞれ本発明の実施例の回略図で
ある。図4はステップ切換え方式であり、直流電源量5
の出力を抵抗とツェナーダィオード16の直列回路に供
給し、ツヱナーダィオード16の両端に生ずる一定電圧
をシリーズ抵抗r.,r2・・・・・・で分圧し、各分
圧点の電圧をトランジスタ19のベースに切換印加する
4 and 6 are schematic diagrams of embodiments of the present invention. Figure 4 shows the step switching method, and the amount of DC power is 5.
The output of r. , r2 .

これにより、DC−DCコンバータ20の入力電圧、し
たがって熱陰極1に供給される電流値が増減されてその
輝度が制御される。したがって、切換スイッチ17を適
当な位置に切換えることにより、いB6熱陰極の加熱温
度をレンズ倍率または所要照射ビーム径の変化に応じて
必要最小限の値に設定することができる。図5は、図4
の分圧用シリーズ抵抗の代りに可変抵抗VRを用いて連
続切換えができるようにしたものであり、その動作は図
4の場合と全く同様である。これらの場合、切換スイッ
チ17または可変抵抗摺動子17Aの指標をレンズ倍率
または所要スポット径であらわしておくこともでき、さ
らに前記スイッチまたは情勤子を電子レンズの電流切換
えスイッチと連動させれば、操作性の向上に役立て)。
As a result, the input voltage of the DC-DC converter 20, and therefore the current value supplied to the hot cathode 1, is increased or decreased to control its brightness. Therefore, by switching the changeover switch 17 to an appropriate position, the heating temperature of the B6 hot cathode can be set to the minimum necessary value in accordance with changes in lens magnification or required irradiation beam diameter. Figure 5 is Figure 4
A variable resistor VR is used instead of the series resistor for voltage division to enable continuous switching, and its operation is exactly the same as the case of FIG. In these cases, the index of the selector switch 17 or the variable resistance slider 17A can be expressed by the lens magnification or the required spot diameter, and if the switch or the variable resistor is linked with the current selector switch of the electronic lens. , to help improve operability).

又通常は蒸発速度が遅くて寿命が長く、しかもタングス
テン・ヘヤピン形熱陰極と同種度の輝度が得られる1,
600o k〜1,800o kの陰極温度に設定して
おき、高輝度電子源が必要な時のみ陰極温度をあげ、一
定時間後(例えば、電子線装置の使用を停止した後)は
自動的に、通常設定温度に復帰するようにすれば、熱陰
極の長寿命化には一段と有効である。
In addition, it usually has a slow evaporation rate, has a long life, and can provide the same brightness as a tungsten hairpin hot cathode1.
The cathode temperature is set at 600oK to 1,800oK, and the cathode temperature is raised only when the high-intensity electron source is required, and automatically after a certain period of time (for example, after the use of the electron beam device is stopped). , it is more effective to extend the life of the hot cathode by allowing the temperature to return to the normal set temperature.

図5はその一例である。図6において、リレー23の接
点SI,S2は通常は黒接点側に接しており、トランジ
スタ19のベース電位は、分圧抵抗R1,R2により例
えば1600〜1800o kの温度に対応する値に設
定されている。高倍率観測時にセットスイッチ22を開
成すると、リレー23が付勢されて接点S1,S2が白
接点側に切換えられ、熱陰極1は切換スイッチ17の接
点位置に応じた大きさの電流で加熱され、所定の高輝度
に上げられると同時に、接点S2によりリレー23が自
己保持される。観察を終って電源15がオフにされると
、リレー23の自己保持が解かれて初期状態に戻るので
、熱陰極1は通常の設定状態になる。以上は走査型露顕
について説明したが、透過型電顕の場合も全く同様、高
倍率では高温度に、低倍率で使用する場合は低い温度に
加熱して、寿命を長くすることで、前前述の如きいB6
電子源の特長を生かすことができる。
FIG. 5 is an example. In FIG. 6, the contacts SI and S2 of the relay 23 are normally in contact with the black contact side, and the base potential of the transistor 19 is set to a value corresponding to a temperature of, for example, 1600 to 1800 ok by the voltage dividing resistors R1 and R2. ing. When the set switch 22 is opened during high-magnification observation, the relay 23 is energized and the contacts S1 and S2 are switched to the white contact side, and the hot cathode 1 is heated by a current whose magnitude corresponds to the contact position of the changeover switch 17. , and at the same time, the relay 23 is self-held by the contact S2. When the power supply 15 is turned off after the observation, the self-holding of the relay 23 is released and the hot cathode 1 returns to its initial state, so that the hot cathode 1 returns to its normal setting state. The above explanation is about scanning exposure microscopes, but transmission electron microscopes are also heated in the same way. like B6
The features of the electron source can be utilized.

図面の簡単な説明図1、図2は本発明の原理を説明する
略線図、図3は陰極温度と輝度および蒸発速度との関係
を示す図表、図4ないし図6はそれぞれ本発明の実施例
の回路図である。
BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 and 2 are schematic diagrams explaining the principle of the present invention, FIG. 3 is a chart showing the relationship between cathode temperature, brightness, and evaporation rate, and FIGS. 4 to 6 each illustrate the implementation of the present invention. FIG. 3 is an example circuit diagram.

1・・・熱陰極、15…直流電源、16・・・ッェナダ
ィオード、17・・・切換スイッチ、20・・・DC−
DCコンバータ、23…リレー。第1図 第2図 第3図 第4図 第5図 第6図
1... Hot cathode, 15... DC power supply, 16... Jena diode, 17... Changeover switch, 20... DC-
DC converter, 23...relay. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】 1 高真空中で加熱されるLaB_6熱陰極と、前記熱
陰極に電流を供給する電源装置と、発生した電子線を加
速する手段と、電子線を集束する手段とを具備した熱陰
極電子源装置において、熱陰極の加熱温度を電子線集束
手段の切換と連動する手段を設け、LaB_6熱陰極の
加熱温度を電子線のビーム径の変化に応じてビーム径が
小さいほど高温に、またビーム径が大きいほど低温にな
るように制御することを特徴とする熱陰極電子源装置。 2 熱陰極の加熱温度を、通常は比較的低温に設定し、
ビーム径を小さくする時は高温に切換え、予定時間経過
後は自動的に通常設定状態に復帰させることを特徴とす
る第1項記載の熱陰極電子源装置。
[Claims] 1. Equipped with a LaB_6 hot cathode that is heated in a high vacuum, a power supply device that supplies current to the hot cathode, means for accelerating the generated electron beam, and means for focusing the electron beam. In the hot cathode electron source device, a means is provided to link the heating temperature of the hot cathode with switching of the electron beam focusing means, and the heating temperature of the LaB_6 hot cathode is adjusted so that the smaller the beam diameter is, the higher the temperature is. In addition, a hot cathode electron source device characterized in that the temperature is controlled so that the larger the beam diameter, the lower the temperature. 2 The heating temperature of the hot cathode is usually set to a relatively low temperature,
2. The hot cathode electron source device according to claim 1, characterized in that when reducing the beam diameter, the temperature is switched to high temperature, and after a predetermined time has elapsed, it is automatically returned to the normal setting state.
JP53034466A 1978-03-25 1978-03-25 Hot cathode electron source device Expired JPS6016700B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP53034466A JPS6016700B2 (en) 1978-03-25 1978-03-25 Hot cathode electron source device
NL7902266A NL7902266A (en) 1978-03-25 1979-03-22 ELECTRON SOURCE UNIT WITH HOT CATHOD.
DE19792911741 DE2911741A1 (en) 1978-03-25 1979-03-26 GLOW CATHODE ELECTRON SOURCE ARRANGEMENT
GB7910461A GB2019172A (en) 1978-03-25 1979-03-26 Control circuit for a hot-cathode electron source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53034466A JPS6016700B2 (en) 1978-03-25 1978-03-25 Hot cathode electron source device

Publications (2)

Publication Number Publication Date
JPS54127272A JPS54127272A (en) 1979-10-03
JPS6016700B2 true JPS6016700B2 (en) 1985-04-26

Family

ID=12415018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53034466A Expired JPS6016700B2 (en) 1978-03-25 1978-03-25 Hot cathode electron source device

Country Status (4)

Country Link
JP (1) JPS6016700B2 (en)
DE (1) DE2911741A1 (en)
GB (1) GB2019172A (en)
NL (1) NL7902266A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4424448A (en) * 1979-12-26 1984-01-03 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam apparatus
US6456009B1 (en) 2000-07-31 2002-09-24 Communication And Power Industries Adaptive heater voltage algorithm and control system for setting and maintenance of the heater voltage of a vacuum electron device
CN119324144B (en) * 2024-09-24 2025-09-19 华北电力大学(保定) Stable and constant controllable heating method for hot cathode

Also Published As

Publication number Publication date
GB2019172A (en) 1979-10-24
NL7902266A (en) 1979-09-27
JPS54127272A (en) 1979-10-03
DE2911741A1 (en) 1979-10-11

Similar Documents

Publication Publication Date Title
JP2868536B2 (en) Method of irradiating object in transmission electron microscope and electron microscope therefor
Oatley The scanning electron microscope
US2234806A (en) Method of electronoptically enlarging images
US2494442A (en) Electron microscope comprising magnetic focusing
JPS6016700B2 (en) Hot cathode electron source device
GB2127588A (en) Electron beam scanning control
JP2002150987A (en) Electron microscope and transmission electron image capturing method in electron microscope
US2765422A (en) Television camera tube
US4194116A (en) Electron microscope or the like and method of use
US4006357A (en) Apparatus for displaying image of specimen
US6472663B2 (en) Electron microscope
JPS6343859B2 (en)
US5373158A (en) Field-emission transmission electron microscope and operation method thereof
US4722097A (en) X-ray diagnostics installation with spatial frequency high-pass filtering
JPH07262950A (en) Scanning electron microscope
JP2000208089A (en) Electron microscope equipment
JPS6248344B2 (en)
Hayashida et al. Development of computer-assisted minimal-dose system with beam blanker for TEM
JP3974415B2 (en) Field emission electron microscope
CA1061477A (en) Electron microscope
JPH0343650Y2 (en)
GB2126778A (en) Improvements relating to scanning electron and scanning optical microscopes
JP2000228352A (en) Electron gun and electron beam transfer device having the same
JPS5954154A (en) Particle beam device with field emission type electron gun
DE1462803B2 (en) Device for producing microfacsimiles with a high line density