JPS60175476A - Manufacture of integrated semiconductor device - Google Patents

Abstract

PURPOSE:To enhance the arraying accuracy and improve the heat sink of a semiconductor element by bonding a plurality of metal pieces through insulating pieces in a sandwich shape, and then mounting fixedly the element through a solder material. CONSTITUTION:A heat sink body 1 and an insulator 2 are selected to have an equal arraying interval of semiconductor elements in the total of the thicknesses and the solder material. The body 1 and the insulator 2 are bonded with hard brazing material. Then, the solder material is selectively deposited and plated on the body 1. Then, an electric isolation is formed between the elements to form a semiconductor array, which is mounted fixedly on the position of the heat sink body. Thus, the element array is mounted up-side-down. The elements are electrically connected through each of the heat sink body.

Description

[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to an integrated semiconductor device having a one-dimensional array,
In particular, the present invention relates to a method of manufacturing an integrated semiconductor device that improves heat dissipation of each element.

[Prior art and its problems]

An integrated semiconductor device in which semiconductor elements are integrated in a regular arrangement can be applied using various semiconductor elements. Especially when optical semiconductor elements are arranged in a one-dimensional array [integrated L E
I) Arrays, semiconductor laser arrays, Kunia image sensors, etc. are light sources for optical information processing.

Important as a sensor. Among these integrated semiconductor devices, those using semiconductor elements operated by current injection often require heat dissipation measures for each semiconductor element.

A method for manufacturing an integrated semiconductor device is a so-called up-type method in which an integrated device, in which a semiconductor element has been formed and isolated, is mounted on a semiconductor substrate with the active surface facing upward.
How to mount with s1de-up.

There is a so-called up-side-down mounting and arrangement method in which individually fabricated semiconductor devices are mounted with their active surfaces facing down.

FIG. 1C shows the former conventional example, and FIG. 952 shows the latter conventional example.

Each of these conventional examples has the following problems. First, the former has the advantage of having a high arrangement load because the elements are integrated and arranged on the semiconductor substrate 2 on the heat sink 1, but 11! Since heat is dissipated from the dynamic region 3 through the semiconductor substrate 2, heat dissipation is poor, which is disadvantageous for current injection type semiconductor devices. Also.

The latter has the advantage of good heat dissipation because the active region 3 is in direct contact with the heat sink 1, and is advantageous for current injection operation type semiconductor devices, but the arrangement precision is poor because the semiconductor devices must be arranged individually. It has disadvantages.

[Purpose of the invention]

The present invention has been developed in view of the above-mentioned points, and is an integrated semiconductor device in which C two-handed conductor elements are formed and isolated on the same semiconductor substrate.
It is an object of the present invention to provide a method for manufacturing an integrated semiconductor device that can perform mounting, have high alignment accuracy, and improve heat dissipation from each semiconductor element.

[Summary of the invention]

[Summary of the Invention] The present invention involves laminating a metal piece serving as a heat sink body and an insulating piece for electrode separation in a sandwich shape, and forming a semiconductor;
An array of heat sink bodies is formed in accordance with the arrangement spacing of the pens, and then an integrated semiconductor element is assembled using solder material on each heat sink body.
This is what you mount with.

〔Effect of the invention〕

According to the present invention, the semiconductor element! ! Since the stacking is performed on the semiconductor substrate, the alignment accuracy is high, and since the heat sink body is electrically isolated for each element, there is no need to separate the semiconductor elements (up-side-down mounting is possible). According to the present invention, it is possible to obtain an integrated semiconductor device in which the arrangement precision K is high and the heat dissipation of the semiconductor elements is good.

[Embodiments of the invention]

Embodiments of the present invention will be explained below using the drawings.

FIG. 3 is a perspective view of an embodiment of the present invention. In the figure, 1 is a heat sink body (heat sink), and 5 is an insulator for electrically isolating the heat sink. First, heat sink body l and insulator 2
are selected so that the sum of their respective thicknesses and brazing filler metals is equal to the array spacing of the semiconductor elements. Then, the weight of the heat sink and the insulator 2 are bonded using hard solder. For example, the heat sink body is made of steel (Cu), the p insulator is made of alumina (A/, U
s) Ceramics etc. are used, and silver solder (Ag) is used as the hard solder.
(x)Cu(1-X))l Gold wax (Au(x)Cu(+
-x) ) * is used.

Furthermore, instead of using hard solder, the alumina ceramic side may be metallized using carbon nichrome (Cr), titanium (Ti), etc., and soft solder (solder) having a low melting point may be used. Next, solder materials such as heat sink body lζnidium (In), gold-tin (Au(x)8n(+-x)), gold-silicon (Au(x)di(+-x)), etc. It is formed using methods such as selective vaporization* and iy+. The semiconductor element array, which has been subjected to C2 air inlation between the descendant semiconductor elements, is mounted and solidified in accordance with the position of the heat sink body.

1 Upgrade the semiconductor element array as shown in Figure 3.
-side -down mounting is possible.

Electrical connection to each semiconductor element may be made via each heat sink body.

According to the embodiment of the present invention, the active regions of the six semiconductor elements are in contact with the heat sink body without intervening the semiconductor substrate, so that heat radiation to the heat sink body is good. Moreover, this is effective for the integration of storage and flow-injection type semi-conductor devices, such as semiconductor chips, LGI, and the like.

In addition, the present invention is also effective in cases where thermal influence from adjacent semiconductor devices is a problem.

For example, the present invention is applied to the mounting method used in the conventional example shown in FIG. This example! It is shown in Figure 44. In this embodiment, the insulator 5'l2 is made of a material with low thermal conductivity.

By doing this, as is clear from the comparison with the conventional example in FIG. 2, each semiconductor element t'i is electrically and thermally insulated.

As stated above, (2) the present invention provides an integrated conductor device that can directly mount a semiconductor element array up-side-down, has a high degree of arrangement, and has excellent heat dissipation. It is also possible to fabricate an integrated semiconductor device with improved thermal insulation.

In the embodiments of the present invention, various materials are not described in detail, but it is sufficient to select materials suitable for each application. In addition, in the embodiments of the present invention, the connection of electrodes to each semiconductor element will be described in detail, but various techniques can be applied to this, for example, the shape of the electrodes can be devised to form a connector type. be.

In short, the present invention can be applied in various ways without departing from its spirit and scope.

[Brief explanation of drawings]

1 and 2 are perspective views for explaining a conventional example, and FIGS. 3 and 4 are perspective views for explaining the present invention in detail. l・・・・・・Heat sink body. 2... Semiconductor substrate. 3... Active area of a semiconductor element. 4.4'・・・・・・Semiconductor cord electrode. 5.5'...Insulator (thermal resistor). Representative Patent Attorney Kensuke Norichika (and 1 other person) Figure 1 Figure 2

Claims (2)

[Claims] (1) After a plurality of metal pieces having a predetermined thickness for mounting and fixing a semiconductor element are bonded together in a sandwich shape through an insulator piece having a predetermined thickness, a desired portion of the exposed portion of the metal piece is fixed. A hunter material is provided to mount and secure the half-quad element. A method of manufacturing an integrated semiconductor device, which comprises mounting and fixing a semiconductor element through a suitable l1er solder material. (2) Manufacture of an integrated semiconductor device according to item 1, subsection 1α of claim 1, characterized in that the rod piece is made of a low thermal conductivity material that provides a desired thermal resistance between adjacent semiconductor elements. Method.