JPS6019098B2 - Manufacturing method of lanthanum hexaboride hot cathode - Google Patents
Manufacturing method of lanthanum hexaboride hot cathodeInfo
- Publication number
- JPS6019098B2 JPS6019098B2 JP52116874A JP11687477A JPS6019098B2 JP S6019098 B2 JPS6019098 B2 JP S6019098B2 JP 52116874 A JP52116874 A JP 52116874A JP 11687477 A JP11687477 A JP 11687477A JP S6019098 B2 JPS6019098 B2 JP S6019098B2
- Authority
- JP
- Japan
- Prior art keywords
- hot cathode
- manufacturing
- lanthanum
- barrier layer
- shelf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052746 lanthanum Inorganic materials 0.000 title claims description 15
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000004888 barrier function Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- 239000003870 refractory metal Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Description
【発明の詳細な説明】
本発明は六棚化ランタンゥェハーより熱陰極の製造法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a hot cathode from a six-shelf lantern wafer.
六棚化ランタンは、熱陰極としてタングステンより優れ
た特性があり、その実用化力ま要望されている。Six-shelf lanthanum has better properties than tungsten as a hot cathode, and its practical application is desired.
その理由は、タングステンよりも、仕事関数が小さく、
低温で使用可能であり、輝度が高く、長時間使用できる
というによるものである。しかし、六棚化ランタンは高
温で支持金属であるタングステン線、タンタル線などの
難融性金属との反応が激しく実用化にあたってはさまざ
まな工夫がなされている。例えば、黒鉛との反応が少な
いことを利用して黒鉛ではさみ込む、あるいは六郷化ラ
ンタンと支持金属との間に障壁層を介在させるなどであ
る。一方、単結晶六棚化ランタン熱陰極は、これまでの
多結晶焼給体熱陰極に比べさらに長寿命、高輝度をもつ
こと「 また電流安定度、雰囲気安定化ていることから
、単繕晶六棚化ランタンを熱陰極として用いることによ
り熱陰極としての性能が上がるとが期待される。The reason is that the work function is smaller than that of tungsten.
This is because it can be used at low temperatures, has high brightness, and can be used for a long time. However, six-shelf lanthanum reacts violently with the supporting metals, which are refractory metals such as tungsten wire and tantalum wire, at high temperatures, and various efforts have been made to put it into practical use. For example, it may be sandwiched between graphite to take advantage of its low reaction with graphite, or a barrier layer may be interposed between Rokugoka lanthanum and the supporting metal. On the other hand, single-crystal six-shelf lanthanum hot cathodes have a longer lifespan and higher brightness than conventional polycrystalline firing body hot cathodes. It is expected that the use of six-shelf lanthanum as a hot cathode will improve its performance as a hot cathode.
しかし、単結晶六棚化ランタンを熱陰極として用いてい
る例はまだ殆んどなく、単結晶を用いた熱陰極の製造法
、支持法にはまだ解決しなければならない問題点が残さ
れている。本発明は単結晶六棚化ランタン熱陰極の製造
法を提供することを目的とするものである。However, there are still very few examples of using single-crystal six-shelf lanthanum as a hot cathode, and there are still problems that need to be solved in the manufacturing and supporting methods of hot cathodes using single crystals. There is. An object of the present invention is to provide a method for manufacturing a single-crystal six-shelf lanthanum hot cathode.
本発明は、単結晶六棚化ランタンのウェハー表面に障壁
層を被覆し、さらにその上に難融性属を被覆した後これ
をチップ状に切断し、チップ先端を研磨して円錐状とし
、これにタングステン線等の支持導線をつけて熱陰極と
するものである。The present invention involves coating a barrier layer on the surface of a wafer of single-crystal six-shelf lanthanum, further coating a refractory metal thereon, cutting it into chips, and polishing the tips of the chips to form a conical shape. A supporting wire such as a tungsten wire is attached to this to form a hot cathode.
以下図面に従い本発明の製造法をさらに詳しく説明する
。第１図は本発明法による熱陰極の製造法の工程を示す
説明図である。The manufacturing method of the present invention will be explained in more detail below with reference to the drawings. FIG. 1 is an explanatory diagram showing the steps of a hot cathode manufacturing method according to the present invention.
第１工程は熱陰極に適合した厚さの六棚化ランタンの単
結晶からなるウェハー−１を出発原料とし、これに障壁
層を被覆したウェハー２とし、第２工程でウェハー２に
さらに雛触性金属を被覆したウェハー３とし、第３工程
でウェハー３をチップ４とし、第４工程でチップ４を先
端加工したチップ５とし、第５工程で支持導線を熔接し
て熱陰タ極とする。In the first step, a wafer 1 made of a single crystal of six-shelf lanthanum with a thickness suitable for a hot cathode is used as a starting material, and a wafer 2 is formed by coating this with a barrier layer. In the third step, the wafer 3 is made into a chip 4. In the fourth step, the tip 4 is made into a chip 5 with a processed tip. In the fifth step, a support conductor is welded to make a hot cathode pole. .
第２図は本発明法によって得た熱陰極を示したものであ
る。FIG. 2 shows a hot cathode obtained by the method of the present invention.
単結晶六棚化ランタンウェハー１上に障壁層及び灘融性
金属を被覆させ、障壁層材料としてはＷａ族、またはＶ
ａ族金属の二棚化物の一つまたはこれらの混合物を使用
し、繁融性金属は、タングステン、タンタル、モリブデ
ン、ニオブ、レニウムの一つまたはこれらの混合物を使
用する。A barrier layer and a fusible metal are coated on a single crystal six-shelf lanthanum wafer 1, and the barrier layer material is Wa group or V
One or a mixture of di-shelf metals of Group A metals is used, and the fusible metal is one of tungsten, tantalum, molybdenum, niobium, rhenium, or a mixture thereof.
被覆方法としては塗布法、スパッタリング、気相化学メ
ッキ法（ＣＶＤ），イオンプレーティングなどを用いて
、障壁層を被覆したウェハ−２とし、さらに、その上に
繁融金属を被覆したウェハ−３とする。ウェハー３には
超音波加工、または放電加工などによりチップ状に切断
してチップ４とする。これにより平行した面に障壁層及
び簸融性金属が被覆された直方体状のチップが出釆る。
該チップの先端を機械研磨により円錐状にして先端角度
Ａ５０〜１０び、先端の曲率半径Ｒ５０〜１００＃に研
磨した後、さらに電解研磨によって先端の曲率半径を１
０〜５０山とする。最後に被覆された面にタングステン
線、タンタル線などをスポットウェルディングなどによ
り接着さ、熱陰極とする。本発明によれば、チップの１
個ずつに被覆する方法に比べ一度に多量のチップが作成
されるのでコスト的にも安くなるし、また技術的にもは
るかにプロセスが簡略になる。Wafer 2 is coated with a barrier layer using a coating method, sputtering, vapor phase chemical plating (CVD), ion plating, etc. as a coating method, and wafer 3 is coated with a fusible metal on top of the barrier layer. shall be. The wafer 3 is cut into chips 4 by ultrasonic machining, electrical discharge machining, or the like. This produces a rectangular parallelepiped chip whose parallel surfaces are coated with a barrier layer and an elutriative metal.
The tip of the tip is mechanically polished to a conical shape with a tip angle A of 50 to 10 mm and a radius of curvature R of 50 to 100 #, and then electrolytically polished to a radius of curvature of 1 mm.
0 to 50 peaks. Finally, a tungsten wire, tantalum wire, or the like is bonded to the coated surface by spot welding or the like to form a hot cathode. According to the invention, one of the chips
Compared to the method of coating each chip one by one, a large number of chips can be made at once, so the cost is lower and the process is technically much simpler.
第１図は本発明による熱陰極の製造工程を示す説明図、
第２図は本発明による熱陰極を示す断面図である。
１は単結晶六棚化ランタンウェハー、２は１に障壁層を
被覆したもの、３は２に雛融性金属を被覆したもの、４
はチップ状に切断したもの、５は先端加工を施したもの
、６はチップに支持導線をつけた熱陰極、Ｒは先端の曲
線半径、Ａは先端角度、７は単結晶六棚化ランタン、８
は障壁層、９は鰹融性金属の被膜で、１０は支持導線で
ある。
多１図多２図FIG. 1 is an explanatory diagram showing the manufacturing process of a hot cathode according to the present invention;
FIG. 2 is a sectional view showing a hot cathode according to the present invention. 1 is a single-crystal six-shelf lanthanum wafer, 2 is 1 coated with a barrier layer, 3 is 2 coated with a meltable metal, 4
is cut into a chip, 5 is a tip processed, 6 is a hot cathode with a support wire attached to the tip, R is the curve radius of the tip, A is the tip angle, 7 is a single crystal six-shelf lanthanum, 8
9 is a barrier layer, 9 is a bonito-fusible metal coating, and 10 is a support conductor. Multi 1 drawing Multi 2 drawing
Claims (1)
を被覆し、さらにその上に難融性金属を被覆し、これを
熱陰極チツプの大きさに切り取り、先端加工を施し、支
持金属を接着させることを特徴とする六硼化ランタン熱
陰極の製造法。1. A barrier layer is coated on both the upper and lower surfaces of a single-crystal lanthanum hexaboride wafer, and a refractory metal is further coated on top of the barrier layer. This is cut to the size of a hot cathode chip, the tip is processed, and a support metal is bonded. A method for producing a lanthanum hexaboride hot cathode, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52116874A JPS6019098B2 (en) | 1977-09-30 | 1977-09-30 | Manufacturing method of lanthanum hexaboride hot cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52116874A JPS6019098B2 (en) | 1977-09-30 | 1977-09-30 | Manufacturing method of lanthanum hexaboride hot cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5451470A JPS5451470A (en) | 1979-04-23 |
| JPS6019098B2 true JPS6019098B2 (en) | 1985-05-14 |
Family
ID=14697760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52116874A Expired JPS6019098B2 (en) | 1977-09-30 | 1977-09-30 | Manufacturing method of lanthanum hexaboride hot cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6019098B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201098U (en) * | 1985-06-04 | 1986-12-16 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5760639A (en) * | 1980-09-26 | 1982-04-12 | Denki Kagaku Kogyo Kk | Heat megative electrode consisting of single crystal of hexaboromide |
| CN100349687C (en) * | 2004-08-08 | 2007-11-21 | 湖北汽车工业学院 | Coated stick of spot welding electrode surface electric spark coating layer and its preparing method |
| EP1858047B1 (en) * | 2005-01-14 | 2012-06-27 | Denki Kagaku Kogyo Kabushiki Kaisha | Electron source manufacturing method |
-
1977
- 1977-09-30 JP JP52116874A patent/JPS6019098B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61201098U (en) * | 1985-06-04 | 1986-12-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5451470A (en) | 1979-04-23 |
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