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JPS6020347B2 - Manufacturing method of silicon nitride sintered body - Google Patents
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JPS6020347B2 - Manufacturing method of silicon nitride sintered body - Google Patents

Manufacturing method of silicon nitride sintered body

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Publication number
JPS6020347B2
JPS6020347B2 JP54014640A JP1464079A JPS6020347B2 JP S6020347 B2 JPS6020347 B2 JP S6020347B2 JP 54014640 A JP54014640 A JP 54014640A JP 1464079 A JP1464079 A JP 1464079A JP S6020347 B2 JPS6020347 B2 JP S6020347B2
Authority
JP
Japan
Prior art keywords
sintered body
silicon nitride
weight
nitride sintered
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54014640A
Other languages
Japanese (ja)
Other versions
JPS55109276A (en
Inventor
善憲 服部
勝久 藪田
康史 松尾
雄飛 福浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP54014640A priority Critical patent/JPS6020347B2/en
Publication of JPS55109276A publication Critical patent/JPS55109276A/en
Publication of JPS6020347B2 publication Critical patent/JPS6020347B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は高強度で繊密な窒化珪素競給体の製造法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a high-strength, dense silicon nitride competitive body.

窒化珪素(Si3N4)競結体は特有の低い熱膨張率の
ため耐熱衝撃性に殴れ、また機械的強度、硬度、化学的
安定性に優れているため、各種の高強度耐熱材料として
注目されている。
Silicon nitride (Si3N4) composite has excellent thermal shock resistance due to its unique low coefficient of thermal expansion, and has excellent mechanical strength, hardness, and chemical stability, so it is attracting attention as a variety of high-strength heat-resistant materials. There is.

しかしながら窒化珪素自体は暁絹性が乏しく、また大気
圧下では190000前後で揮発分解する性質を有する
ため、嫌結方法につき種々研究されてきている。このう
ちホットプレス法は強度が大きい縄密な暁結体が得られ
るが、複雑な形状の製品には難しく、普通暁結法と反応
焼結法は1気圧下の雰囲気では暁結中に揮発するためピ
ンホールが多く強度の大きな材質が得られなかった。と
ころが普通焼結法は焼結法として最も簡便な方法である
だけに、この方法により強度の十分な窒化珪素暁結体を
得ることができるならばその工業的意義は大きい。本発
明者らは、このような要望に応えるため鋭意研究の結果
、Si3N4に特定割合でMg0およびZr02を添加
し、非酸化性雰囲気中で暁結すれば繊密でしかも高強度
な焼結体が得られることを見出し本発明を完成した。
However, since silicon nitride itself has poor dryness and has the property of volatilizing and decomposing under atmospheric pressure at around 190,000 ℃, various studies have been conducted on methods for repelling it. Among these methods, the hot press method produces a dense compact with high strength, but it is difficult to produce products with complex shapes, and the normal press method and reactive sintering method volatilize during compaction in an atmosphere of 1 atmosphere. As a result, there were many pinholes and it was not possible to obtain a material with high strength. However, since the ordinary sintering method is the simplest sintering method, it would have great industrial significance if a silicon nitride compact with sufficient strength could be obtained by this method. In order to meet these demands, the present inventors conducted intensive research and found that by adding Mg0 and Zr02 in a specific ratio to Si3N4 and sintering it in a non-oxidizing atmosphere, a dense and high-strength sintered body can be obtained. The present invention was completed based on the discovery that the following could be obtained.

すなわち本発明の要旨は、重量百分比で別紙三元組成図
の点A,B,CおよびDを結ぶ4辺形区域に囲まれる範
囲(A,B,C,Dを結ぶ直線上も含む)内の割合のS
i3N4,Mg○およびZr02、ただし点A,B,C
およびDはSi3N4 MgO Zr02
A 98.0% 1% 1%B 89
多 10% 1%0 80% 10携 10% D 80% 1% 19略 からなる混合粉末を成形し、該成形体を非酸化性雰囲気
で暁結することを特徴とする窒化珪素健結体の製造法に
ある。
In other words, the gist of the present invention is that within the range surrounded by the quadrilateral area connecting points A, B, C, and D of the attached ternary composition diagram (including on the straight line connecting A, B, C, and D) in terms of weight percentage, S of the proportion of
i3N4, Mg○ and Zr02, but points A, B, C
and D is Si3N4 MgO Zr02
A 98.0% 1% 1%B 89
10% 1% 0 80% 10% D 80% 1% 19% D It's in the manufacturing method.

以下に本発明を詳細に説明する。The present invention will be explained in detail below.

本発明方法で非酸化性雰囲気で競結するのは、窒化珪素
や極めて酸化し易いからである。
The reason why the method of the present invention binds in a non-oxidizing atmosphere is because silicon nitride is extremely easily oxidized.

暁絵は通常1600〜185000、好ましくは165
0〜180ぴ○で行われ、1600qoよりも低い温度
であると簾結が不充分となる場合があり、1850q○
よりも高い温度であるとSiが4の揮発が著しくなる。
以下実施例により具体的に説明する。
Akatsuki is usually 1,600 to 185,000, preferably 165
It is carried out at a temperature of 0 to 180 qo, and if the temperature is lower than 1600 qo, the blinding may be insufficient, and 1850 qo
If the temperature is higher than that, the volatilization of Si4 becomes significant.
This will be explained in detail below using Examples.

*実施例 1 Q一Si3N49増重量%と8一Si3N41の重量%
よりなる平均粒径1〆のSi3N4粉末と、平均粒径2
仏のZrQ粉末と、平均粒径0.秋のMg○粉末(いず
れも市販品)を表1に示す各種の割合に配合し、ボール
ミルにより粉砕して平均粒径が14以下とした。
*Example 1 Q-Si3N49 weight increase % and 8-Si3N41 weight %
Si3N4 powder with an average particle size of 1 and an average particle size of 2
Buddha's ZrQ powder with an average particle size of 0. Autumn Mg○ powder (all commercially available products) was blended in various proportions shown in Table 1 and ground to an average particle size of 14 or less using a ball mill.

この粉末に結合剤としてカンフアーを粉末全体に対して
5重量%添加し、2000kg/のの圧力で10×5×
3仇舷の寸法にプレス成形し、一旦窒素気流中で600
℃まで加熱して結合剤を散逸させた後、該成形体を黒鉛
るつぼの中でN2雰囲気下で競結した。
Camphor was added as a binder to this powder in an amount of 5% by weight based on the total powder, and the mixture was 10 x 5 x
Press-formed to a size of 3 broadsides, and then heated to 600℃ in a nitrogen stream.
After heating to 0.degree. C. to dissipate the binder, the compact was competitively bonded in a graphite crucible under an N2 atmosphere.

得られた試料a〜iについて諸特性を測定した結果を表
1に示す。
Table 1 shows the results of measuring various properties of the obtained samples a to i.

なお試料符号a〜iは第1図中のものと対応している。
表 1 ※1抗折力測定:4×8×25の舵のテストピースを使
用し.JISB山4104により測定した。
Note that sample numbers a to i correspond to those in FIG.
Table 1 *1 Transverse rupture force measurement: Using a 4 x 8 x 25 rudder test piece. Measured according to JISB Mountain 4104.

※2 ピンホール測定:試料を鏡面研磨し.ASTM規
格B−276‐54により測定した。
*2 Pinhole measurement: Mirror polish the sample. Measured according to ASTM standard B-276-54.

※3 組織 f・・・・繊維状組織.g・・・・粒状組
織表1から明らかなように、本発明の試料a〜eは範囲
外のf〜iに比較して焼結体内部の1叫以上の(Bラン
ク)ピンホールがなくなり組織が繊維状となるため抗新
力値を著しく高めることができた。上記実施例において
「主成分のSi3N4に対して副成分として特定の割合
で添加したMg○とZの2によって耐熱性をはじめ優れ
た諸特性が得られる理由は、Zぬ2がSi3N4と反応
して一部ZrN,Si02等が生成され、同時に添加さ
れているMg○と齢結促進相を形成し、競結性が向上し
て繊密化すると共に、発達した繊維状結晶相が交錯した
組織となる為であると考えられる。
*3 Tissue f... Fibrous tissue. g...Grain structure As is clear from Table 1, samples a to e of the present invention have no more than one (B rank) pinhole inside the sintered body compared to samples f to i which are outside the range. Because the tissue became fibrous, the anti-new power value could be significantly increased. In the above example, ``The reason why excellent properties such as heat resistance can be obtained by adding Mg○ and Z2 as subcomponents in a specific ratio to the main component Si3N4 is that Z2 reacts with Si3N4. ZrN, Si02, etc. are partially generated, and at the same time, they form an age-promoting phase with Mg○, which improves competitiveness and becomes denser, and a structure in which the developed fibrous crystal phase intersects. This is thought to be because.

しかして、本発明方法においてSj3N4成分を80〜
98.0重量%としたのは、80重量%よりSi3N4
成分が少なくなると抗折力値が低下し、98.の重量%
よりも多くなると競結温度を上げる必要が生じ、この場
合焼結時の揮発量が多くなり繊密で高強度の焼結体が得
られないからである。Mg0成分を1〜10重量%とし
たのは、1重量%以下では暁結促進剤としての効果が認
められず、1の重量%より多くなると暁結時の揮発量が
増加すると共に、バインダー成分としてのガラス相およ
び高温での軟化相等が多くなり焼結体の高温強度特性を
低下するためである。Zの2を1〜19重量%としたの
は1重量%より少なくなると蛭結体の内部組織が繊維状
となりにくく強度の向上が得られないし、20重量%以
上となると内部組織は繊維状となるが、焼結性が悪化し
強度が低下するためである。又Si3N4にMg○とZ
r02をMg0:Zr02が1/4より大になるように
加えてホットプレスにより成形した場合、Zの2は安定
化されず従って繰り返し応力を加えた時疲労により破壊
するが本発明の晋通焼結によるものはZの2の1部は変
態のないジルコニ.ウムナイトライドになりZr02の
のこりはMg0によって安定化され安定化されていない
Zr02が全て消失するため疲労に強い焼結体となる。
この安定化されていないZの2が全て消失することは経
験的に知られている。なお本発明による焼結体中のZr
02は晋通焼結であるため凝結後1部は変態のないジル
コニウムナイトラィド1このこりは安定化されたものと
なる。一般にMg0はSj3N4の嫌縞性を向上させる
効果があり、Zの2は競結体中に繊維状組織を譲導する
効果があるが、本発明は両者を組合せその相乗効果を発
揮させたものである。
However, in the method of the present invention, the Sj3N4 component is
98.0% by weight was determined from 80% by weight of Si3N4.
When the amount of components decreases, the transverse rupture strength value decreases, 98. weight% of
This is because if the amount exceeds 1, it becomes necessary to raise the competitive sintering temperature, and in this case, the amount of volatilization during sintering increases, making it impossible to obtain a dense and high-strength sintered body. The reason why the Mg0 component is set to 1 to 10% by weight is that if it is less than 1% by weight, no effect as a dawning accelerator is observed, and if it exceeds 1% by weight, the amount of volatilization during dawning increases and the binder component This is because the glass phase and the softening phase at high temperatures increase, reducing the high temperature strength properties of the sintered body. The reason why 2 of Z is set to 1 to 19% by weight is that when it is less than 1% by weight, the internal structure of the leech body becomes difficult to become fibrous and no improvement in strength can be obtained, and when it exceeds 20% by weight, the internal structure becomes fibrous. However, this is because the sinterability deteriorates and the strength decreases. Also, Mg○ and Z in Si3N4
When r02 is added so that Mg0:Zr02 is larger than 1/4 and molded by hot pressing, Z2 is not stabilized and therefore breaks due to fatigue when repeated stress is applied. Due to the result, part of Z2 is zirconia without metamorphosis. The remaining Zr02 becomes umnitride and is stabilized by Mg0, and all unstabilized Zr02 disappears, resulting in a sintered body that is resistant to fatigue.
It is known empirically that all of the unstabilized 2's of Z disappear. Note that Zr in the sintered body according to the present invention
Since 02 is Shintsu sintered, part of the zirconium nitride 1 after solidification is stabilized without transformation. In general, Mg0 has the effect of improving the streak resistance of Sj3N4, and Z2 has the effect of creating a fibrous structure in the compact, but the present invention combines the two to exhibit their synergistic effect. It is.

そのことは次の実施例2の結果より明らかである。実施
例 2 Sj3N4粉末9の重量%に、種々の割合でZの2粉末
とM奴粉末を配合する以外は実施例1と同様にして蛾結
した。
This is clear from the results of Example 2 below. Example 2 Molten molding was carried out in the same manner as in Example 1, except that 2 powders of Z and 2 powders of M were mixed in various proportions to 9% by weight of Sj3N4 powder.

得られた試料の抗折力を測定し、結果を第2図に示す。
第2図より明らかなように、副成分がそれぞれMg0,
Zの2単独よりも、両者が混合された方が抗折力が大き
くなる。
The transverse rupture strength of the obtained sample was measured and the results are shown in FIG.
As is clear from Figure 2, the subcomponents are Mg0, Mg0,
The transverse rupture strength is larger when both Z are mixed than when both are used alone.

なお両者の配合割合は重量比で4/1〜1/4であるこ
とが好ましく、3/2〜2/3であると特に好ましい。
なお上記実施例1および2においてはMg0,Zr02
を用いたが、公知のように焼成温度以下でMg○,Zr
02となるMg塩、Zr塩などのMg化合物、Zr化合
物を用いても良いことは当然のことで、このような場合
も本発明は包含する。
The mixing ratio of both is preferably 4/1 to 1/4 by weight, particularly preferably 3/2 to 2/3.
In addition, in the above Examples 1 and 2, Mg0, Zr02
However, as is known, Mg○, Zr
It goes without saying that Mg compounds such as Mg salts and Zr salts, and Zr compounds such as 02 may be used, and the present invention also includes such cases.

以上詳述したように本発明はSi3N4にMg0および
Zの2を特定割合で配合し、高強度の焼結体が簡便な晋
通焼結法で得られ、その工業的価値は大きい。
As detailed above, in the present invention, a high strength sintered body can be obtained by a simple Shintsu sintering method by blending Si3N4 with Mg0 and Z2 in a specific ratio, and its industrial value is great.

勿論ホットプレス法とは異なり複雑な形状の焼結体も自
由に得ることができる。
Of course, unlike the hot press method, it is possible to freely obtain sintered bodies with complicated shapes.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の基本成分を示す三元系組成図、第2図
はM蚊とZの2の添加量と抗折力の関係を示すグラフで
ある。 第1図 第2図
FIG. 1 is a ternary composition diagram showing the basic components of the present invention, and FIG. 2 is a graph showing the relationship between the amount of M and Z added and the transverse rupture strength. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 1 重量百分比で別紙第1図三元組成図の点A,B,C
およびDを結ぶ4辺形区域に囲まれる範囲内の割合のS
i_3N_4、MgOおよびZrO_2、ただし点A,
B,CおよびDは、Si_3N_4 MgO ZrO_
2 A 98.0% 1% 1% B 89% 10% 1% C 80% 10% 10% D 80% 1% 19% からなる混合粉末を成形し、該成形体を非酸化性雰囲気
で焼結することを特徴とする窒化珪素焼結体の製造法。 2 MgOとZrO_2の重量比が1/4以上である特
許請求の範囲第1項記載の窒化珪素焼結体の製造法。
[Claims] 1. Points A, B, and C in the ternary composition diagram in Figure 1 of the appendix in weight percentage.
and the proportion of S within the range surrounded by the quadrilateral area connecting D
i_3N_4, MgO and ZrO_2, but point A,
B, C and D are Si_3N_4 MgO ZrO_
2 A mixed powder consisting of 98.0% 1% 1% B 89% 10% 1% C 80% 10% 10% D 80% 1% 19% is molded, and the molded body is sintered in a non-oxidizing atmosphere. A method for producing a silicon nitride sintered body, characterized by: 2. The method for producing a silicon nitride sintered body according to claim 1, wherein the weight ratio of MgO and ZrO_2 is 1/4 or more.
JP54014640A 1979-02-12 1979-02-12 Manufacturing method of silicon nitride sintered body Expired JPS6020347B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54014640A JPS6020347B2 (en) 1979-02-12 1979-02-12 Manufacturing method of silicon nitride sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54014640A JPS6020347B2 (en) 1979-02-12 1979-02-12 Manufacturing method of silicon nitride sintered body

Publications (2)

Publication Number Publication Date
JPS55109276A JPS55109276A (en) 1980-08-22
JPS6020347B2 true JPS6020347B2 (en) 1985-05-21

Family

ID=11866789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54014640A Expired JPS6020347B2 (en) 1979-02-12 1979-02-12 Manufacturing method of silicon nitride sintered body

Country Status (1)

Country Link
JP (1) JPS6020347B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820782A (en) * 1981-07-27 1983-02-07 住友電気工業株式会社 Silicon nitride sintered body and its manufacturing method
JPS5926976A (en) * 1982-08-02 1984-02-13 日本特殊陶業株式会社 High tenacity ceramic tool
JP2512061B2 (en) * 1987-11-26 1996-07-03 日本碍子株式会社 Homogeneous silicon nitride sintered body and method for producing the same

Also Published As

Publication number Publication date
JPS55109276A (en) 1980-08-22

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