JPS6020849B2 - dielectric porcelain composition - Google Patents
dielectric porcelain compositionInfo
- Publication number
- JPS6020849B2 JPS6020849B2 JP57129002A JP12900282A JPS6020849B2 JP S6020849 B2 JPS6020849 B2 JP S6020849B2 JP 57129002 A JP57129002 A JP 57129002A JP 12900282 A JP12900282 A JP 12900282A JP S6020849 B2 JPS6020849 B2 JP S6020849B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- dielectric
- temperature
- calcium oxide
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は高い誘電率を有し、広い温度範囲にわたって誘
電率の変化が小さく、且つ誘電正俊の値が非常に小さく
、しかも粒子径が微細で磁器化が容易である誘電体磁器
組成物に関する。Detailed Description of the Invention The present invention has a high dielectric constant, has a small change in dielectric constant over a wide temperature range, has a very small dielectric constant value, and has a fine particle size, making it easy to make into porcelain. The present invention relates to a dielectric ceramic composition.
従来、高誘電率で温度変化率の小さな組成物としてチタ
ン酸バリウムにスズ酸ビスマス、チタン酸ビスマス、ジ
ルコン酸ビスマスなどのビスマス化合物を添加して温度
特性を平坦にしたものを用いる。Conventionally, as a composition having a high dielectric constant and a small temperature change rate, a composition in which a bismuth compound such as bismuth stannate, bismuth titanate, or bismuth zirconate is added to barium titanate to flatten the temperature characteristics is used.
しかし、最近のセラミックコンデンサには小型大容量の
ものが要求され「積層セラミックコンデンサが数多く用
いられている。この目的のためにビスマス化合物を含む
誘電体組成物を使用する場合には白金あるいはパラジウ
ムからなる内部電極が著しく腐食するという欠点があっ
た。また、組成物中に蒸気圧の高いビスマス化合物が含
まれていると、焼成中にビスマスが蒸発し、繊密なセラ
ミックスを得ることは非常に因簸であった。さらに、誘
電率が2000以下と小さく「小型大容量化の要求を満
足するものではなかった。本発明者らは、上記欠点を解
決した高誘電率磁器組成物を提供すべく鋭意研究を重ね
た結果、チタン酸バリウムに五酸化ニオブ、酸化カルシ
ウム、酸化亜鉛、二酸化マンガンを添加することにより
広い温度範囲にわたって誘電率の変化が小さく、誘電正
俵の値が非常に小さい商議電率組成物になることを見し
、出し、本発明を完成するに至った。o 本発明の基本
的な要旨とするところは、チタン酸バリウム85.70
〜98.89hol%、五酸化ニオブ0.50〜0.3
仇hol%、酸化カルシウム0.50〜9.0仇hol
%、酸化亜鉛0.10〜2.0肌ol%、二酸化マンガ
ン0.01〜0。However, recent ceramic capacitors are required to be small and large in capacity, and many multilayer ceramic capacitors are used.For this purpose, when using dielectric compositions containing bismuth compounds, platinum or palladium However, if the composition contains a bismuth compound with a high vapor pressure, the bismuth will evaporate during firing, making it extremely difficult to obtain a delicate ceramic. Furthermore, the dielectric constant was low at 2000 or less, which did not satisfy the demand for smaller size and larger capacity. As a result of extensive research, we have found that by adding niobium pentoxide, calcium oxide, zinc oxide, and manganese dioxide to barium titanate, the change in dielectric constant is small over a wide temperature range, and the value of dielectric constant is extremely small. They found that it could be made into a composition with electrical conductivity, and completed the present invention. o The basic gist of the present invention is that barium titanate 85.70
~98.89 hol%, niobium pentoxide 0.50-0.3
hol%, calcium oxide 0.50-9.0 hol%
%, zinc oxide 0.10-2.0 skin ol%, manganese dioxide 0.01-0.
3伍hol%から成り、本成分範囲内で五酸タ化ニオブ
と酸化カルシウムのmol比が1:1〜1:4にあるこ
とを特徴とする誘電体磁器組成物にある。The dielectric ceramic composition is characterized in that the molar ratio of niobium pentaoxide and calcium oxide is 1:1 to 1:4 within the range of this component.
チタン酸バリウムは主成分であり、五酸化ニオブは誘電
率の温度変化率を小さくする効果があり、酸化亜鉛を添
加することによりさらに変0化率を小さくすることがで
きる。酸化カルシウムは焼成温度を低下させ、異常粒成
長を防止する効果を有するものである。従来の二酸化マ
ンガン添加はチタン酸バリウム系磁器の焼成において還
元を防止するためのものであったが、本発明におし、夕
てはさらに誘電正援の値を小さくし、誘電率の温度変化
率を小さくする効果を有するものである。ここで、五酸
化ニオブと酸化カルシウムのmol比は1:1〜1:4
の範囲にあることが好ましく、五酸化ニオブlmolに
対して酸化カルシウムaholの組み合わせが最も好ま
しい。前記範囲内で組成比を変化させることによって、
譲函率が2000〜350Q温度変化率が−55℃〜十
125q0にわたって±20%以内、誘電正藤が0.9
%以下で絶縁抵抗の大きい誘電体磁器が得られる。Barium titanate is the main component, and niobium pentoxide has the effect of reducing the rate of change in dielectric constant with temperature, and by adding zinc oxide, the rate of change can be further reduced. Calcium oxide has the effect of lowering the firing temperature and preventing abnormal grain growth. Conventionally, manganese dioxide was added to prevent reduction during firing of barium titanate-based porcelain, but in the present invention, the value of dielectric support is further reduced, and temperature changes in dielectric constant are prevented. This has the effect of reducing the ratio. Here, the molar ratio of niobium pentoxide and calcium oxide is 1:1 to 1:4.
It is preferably in the range of 1 mol of niobium pentoxide to 1 mol of calcium oxide. By changing the composition ratio within the above range,
The yield rate is 2000-350Q, the temperature change rate is within ±20% from -55℃ to 1125q0, and the dielectric Seifuji is 0.9
% or less, dielectric ceramics with high insulation resistance can be obtained.
特に譲鷲正接の値が4・さし、ことから、騒界強度の大
きい使用条件に耐えることが可能な誘電体磁器を提供で
きる。次に、本発明の各成分の限定理由を試験結果を基
に説明する。In particular, since the yield tangent value is 4.0, it is possible to provide dielectric porcelain that can withstand usage conditions with high noise field intensity. Next, the reasons for limiting each component of the present invention will be explained based on test results.
チタン酸バリウムが8570hol%未満では誘電率が
小さく、その温度変イG率が大きくなり、難.89ho
l%を越えると焼結困難となる。五酸化ニオブが0.5
仇hol%禾満では誘電正薮が大きく、さらに暁縞困難
となり、3.00hol%を越えると誘電率が小さく、
その温度変化率が大きくなる。酸化亜鉛が0.1仇ho
l%未満では誘電率の温度変イり率を小さくする効果が
なく、2.0皿01%を越えると譲蟹正薮の値が大きく
なり、さらに絶縁抵抗が劣化する。酸化カルシウムが0
.跡hol%夫満では焼成温度の低下と異常粒成長を防
止する効果がなく、9.0仇hol%を越えると誘電率
の温度変化率が大きくなり、誘電正俊の値も大きくなる
。二酸化マンガンが0.01mol%未満では誘電正暖
を小さくする効果がなく、0.3伍hol%を越ると絶
縁抵抗が劣化する。五酸化ニオブと酸化カルシウムのm
oi比は1:2が最も好ましく、1:1より酸化カルシ
ウムが少なくなると異常粒成長を防止する効果が小さく
、1:4より酸化カルシウムが多くなると誘電率の温度
変化率が大きくなる。If barium titanate is less than 8570 hol%, the dielectric constant is small and its temperature change G rate becomes large, making it difficult to use. 89ho
If it exceeds 1%, sintering becomes difficult. Niobium pentoxide is 0.5
When the hol% is full, the dielectric constant is large and the dawn stripes are even more difficult, and when the hol% is over 3.00 hol%, the dielectric constant is small.
The rate of temperature change increases. Zinc oxide is 0.1 ho
If it is less than 1%, there is no effect of reducing the rate of change in dielectric constant with temperature, and if it exceeds 2.0%, the value of the dielectric constant increases and the insulation resistance further deteriorates. Calcium oxide is 0
.. If the hol% is less than 9.0 hol%, it is not effective in reducing the firing temperature and preventing abnormal grain growth, and if it exceeds 9.0 hol%, the temperature change rate of the dielectric constant becomes large and the value of the dielectric constant becomes large. If the amount of manganese dioxide is less than 0.01 mol%, there is no effect of reducing the dielectric positive temperature, and if it exceeds 0.35 mol%, the insulation resistance will deteriorate. m of niobium pentoxide and calcium oxide
The oi ratio is most preferably 1:2; if the calcium oxide content is less than 1:1, the effect of preventing abnormal grain growth will be small, and if the calcium oxide content is more than 1:4, the temperature change rate of the dielectric constant will increase.
次に、本発明を実施例によってさらに具体的に説明する
が、本発明はその要旨を越えない限り以下の実施例を限
定されるものではない。Next, the present invention will be explained in more detail with reference to examples, but the present invention is not limited to the following examples unless the gist of the present invention is exceeded.
最初に炭酸バリウムを酸化チタンをmol比1:1で混
合し、110ぴ○で仮焼し、チタン酸バリウムの微粉末
を得た。First, barium carbonate and titanium oxide were mixed at a molar ratio of 1:1 and calcined at 110 pi to obtain fine powder of barium titanate.
ここで得た仮暁粉末が完全にチタン酸バリウムになって
いることを粉末X線回折で調べた。このチタン酸バリウ
ムに五酸化ニオブ、酸化亜鉛、酸化カルシウム、二酸化
マンガンを焼成後に下記表に示す配合比になるように秤
取し、不純物の混入を防止するため硬質樹脂製のボール
ミルを用い2餌時間湿式混合し、脱水・乾燥後、成形圧
力3ton′地で直径16側厚さ0.6柳に加圧成形し
「成形物を下記表に示す焼成温度で1時間焼成し、試料
番号1〜15を得た。これらの試料の両面に銀電極を焼
き付け、誘電率「誘電正蚤、誘電率の温度変化率はYH
PデジタルLCRメーターモデル427泌を使用し、測
定温度25q0、測定電圧1.0V皿s、測定周波数1
.皿Hzによる測定により求めた。It was determined by powder X-ray diffraction that the pseudomorphic powder obtained here was completely converted into barium titanate. This barium titanate was calcined with niobium pentoxide, zinc oxide, calcium oxide, and manganese dioxide, and then weighed out so as to have the compounding ratio shown in the table below.In order to prevent the contamination of impurities, a ball mill made of hard resin was used to prepare two feeds. After wet mixing for an hour, dehydrating and drying, the molding pressure was 3 tons to form a willow with a diameter of 16 mm and a thickness of 0.6. 15 was obtained. Silver electrodes were baked on both sides of these samples, and the dielectric constant was ``dielectric positive'', and the temperature change rate of the dielectric constant was YH.
Using a P digital LCR meter model 427, the measurement temperature is 25q0, the measurement voltage is 1.0V, and the measurement frequency is 1.
.. It was determined by measurement using a plate Hz.
絶縁抵抗はYHPモデル432鮒を使用し「印加電圧l
ooV、1分値より求めた。誘電率の温度変化率は−5
5℃〜十125午0の範囲で測定し、25qCにおける
誘電率を基準とした。試験条件および結果を下記表に示
した。表上記表において試料番号1〜10が本発明の範
囲内の実施例であり、11〜15は範囲外の比較例であ
る。Insulation resistance was determined by using YHP model 432 carp and applying voltage l.
ooV was determined from the 1 minute value. Temperature change rate of dielectric constant is -5
It was measured in the range of 5° C. to 1125 pm, and the dielectric constant at 25 qC was used as the standard. The test conditions and results are shown in the table below. In the above table, sample numbers 1 to 10 are examples within the scope of the present invention, and samples 11 to 15 are comparative examples outside the scope.
図面は試料番号5の誘電率の温度変化率を示したもので
ある。本発明の範囲内にある試料番号1〜10の実施例
はいずれも誘電率の温度変化率が小さく、誘電率が20
00以上と大きく、さらに譲鰭正援の値が4・さし、極
めて優れた譲蚤体磁器が得られている。以上のように、
本発明の範囲内の誘電体磁器組成物は実用的な誘電率、
誘電正俊および譲蟹率温0度特性を有し、特に誘電正薮
の値が小さく、ビスマス化合物を含んでいないことから
、電界強度の大きい積層セラミックコンデンサに用いる
誘電体材料としては最適である。The drawing shows the rate of change in dielectric constant of Sample No. 5 with temperature. In all of the examples of sample numbers 1 to 10 within the scope of the present invention, the rate of change in dielectric constant with temperature is small, and the dielectric constant is 20.
It has a large value of 0.00 or more, and has a value of 4.00, making it possible to obtain extremely high quality porcelain. As mentioned above,
The dielectric ceramic composition within the scope of the present invention has a practical dielectric constant,
It has dielectric constant and temperature characteristics of 0 degrees, has a particularly small value of dielectric constant, and does not contain bismuth compounds, making it ideal as a dielectric material for use in multilayer ceramic capacitors with high electric field strength.
5 図面は本発明による組成物の1試料の誘電率の温度
変化率を示すグラフ図である。5 The drawing is a graph showing the temperature change rate of the dielectric constant of one sample of the composition according to the present invention.
Claims (1)
、五酸化ニオブ0.50〜3.00mol%、酸化カル
シウム0.50〜9.00mol%、酸化亜鉛0.10
〜2.00mol%、二酸化マンガン0.01〜0.3
0mol%の成分範囲から成り、五酸化ニオブと酸化カ
ルシウムのmol比が1:1〜1:4の範囲内にあるこ
とを特徴とする誘電体磁器組成物。1 Barium titanate 85.70-98.89 mol%
, niobium pentoxide 0.50-3.00 mol%, calcium oxide 0.50-9.00 mol%, zinc oxide 0.10
~2.00mol%, manganese dioxide 0.01~0.3
A dielectric ceramic composition comprising a component range of 0 mol % and characterized in that the molar ratio of niobium pentoxide to calcium oxide is within the range of 1:1 to 1:4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57129002A JPS6020849B2 (en) | 1982-07-26 | 1982-07-26 | dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57129002A JPS6020849B2 (en) | 1982-07-26 | 1982-07-26 | dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5920907A JPS5920907A (en) | 1984-02-02 |
| JPS6020849B2 true JPS6020849B2 (en) | 1985-05-24 |
Family
ID=14998712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57129002A Expired JPS6020849B2 (en) | 1982-07-26 | 1982-07-26 | dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6020849B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512524A (en) * | 1992-04-07 | 1996-04-30 | Trans-Tech, Inc. | Dielectric ceramic compositions |
| US5262370A (en) * | 1992-04-07 | 1993-11-16 | Trans-Tech, Inc. | Dielectric ceramic compositions |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5741042B2 (en) * | 1974-12-27 | 1982-09-01 | ||
| JPS5910951B2 (en) * | 1980-04-26 | 1984-03-12 | 共立窯業原料株式会社 | Raw material composition for manufacturing high dielectric constant porcelain |
-
1982
- 1982-07-26 JP JP57129002A patent/JPS6020849B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5920907A (en) | 1984-02-02 |
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