JPS6022826B2 - bonding wire - Google Patents
bonding wireInfo
- Publication number
- JPS6022826B2 JPS6022826B2 JP52099594A JP9959477A JPS6022826B2 JP S6022826 B2 JPS6022826 B2 JP S6022826B2 JP 52099594 A JP52099594 A JP 52099594A JP 9959477 A JP9959477 A JP 9959477A JP S6022826 B2 JPS6022826 B2 JP S6022826B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- metal
- metals
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ボンディングワイヤの構造及びそれを用いた
ワイヤボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding wire structure and a wire bonding method using the same.
従来提案されているワイヤボンディング法は、Ａｕ，Ａ
そ線などを用い、超音波溶接、熱圧着（ネイルヘッド）
、抵抗溶接などのボンディング法により半導体べレツト
のパッドとりードの先端部とを電気的に接続させる方法
で半導体装置の製造分野では広く実用化されている技術
である。しかし、ワイヤボンディングは、操作が比較的
簡単である反面接続部（コンタクト部）の機械的強度は
それ程強くない。特に、パッドとワイヤ、ワイヤとりー
ドとの材料がそれぞれ異なる場合（異なるのが一般的で
ある）には、コンタクト部に金属間化合物が生成され接
合部が脆弱化する。この金属間化合物の生成を防止して
接合部の接着力（ポンダピリティ）確保するために従釆
から、例えばワイヤ先端部あるいは、リード先端部にＡ
ｕ又はＡｇメッキを施す等の表面処理を行うのが普通で
あった。このＡｕあるいはＡｇメッキ等の表面処理は高
価な作業となり、半導体装置の構成部品の価格低減の阻
害要因となっている。そこで、本発明の目的は、接着強
度の強いボンディングワイヤを提供するにある。Conventionally proposed wire bonding methods include Au, A
Ultrasonic welding, thermocompression bonding (nail head) using straight wire, etc.
This is a method of electrically connecting the pad of a semiconductor pellet to the tip of a lead using a bonding method such as resistance welding, and is a technique widely used in the field of manufacturing semiconductor devices. However, although wire bonding is relatively easy to operate, the mechanical strength of the connecting portion (contact portion) is not so strong. In particular, when the pad and the wire, and the wire and the lead, are made of different materials (generally, they are different), intermetallic compounds are generated in the contact portion, weakening the joint. In order to prevent the formation of this intermetallic compound and ensure bonding strength (pondability) at the joint, for example, A
It was common practice to perform surface treatments such as U or Ag plating. This surface treatment, such as Au or Ag plating, is an expensive operation, and is an impediment to reducing the cost of components of semiconductor devices. Therefore, an object of the present invention is to provide a bonding wire with strong adhesive strength.
本発明は、接合部の脆弱化の原因が異種金属接合による
金属間化合物の生成にある点を考慮し、極力同種金属の
接合、又は金属間化合物生成をしない金属同士の接合を
形成する、あるいは金属間化合物生成をする金属同士の
接合部を少なくする等の手段により、接合強度を強くし
たボンディングワイヤを提供しようとするもので、その
要旨とするところは、第１の金属からなる第１の線材と
、この線材の軸線に沿って設けられた第２の金属からな
る第２の線材とによりボンディングワイヤを構成した点
にある。The present invention takes into consideration the fact that the cause of weakening of joints is the formation of intermetallic compounds due to the joining of dissimilar metals, and forms joints of similar metals or metals that do not generate intermetallic compounds as much as possible, or The aim is to provide a bonding wire with increased bonding strength by reducing the number of bonding parts between metals that generate intermetallic compounds. The bonding wire is constituted by a wire rod and a second wire rod made of a second metal provided along the axis of the wire rod.
本発明に於て、第１の金属と、第２の金属の選択は、ベ
レットのパッド材質及びリードの先端部の材質によって
決められる。In the present invention, the selection of the first metal and the second metal is determined by the material of the pad of the pellet and the material of the tip of the lead.
即ち、第１の金属としてパッドと金属間化合物を生成し
ない材料を選択すれば、第２の金属としてはリードの先
端部と金属間化合物を生成しない材料が選択される。第
１の金属孫濠材と第２の金属線材との接合形態は、クラ
ッド線とするのが好ましく、具体的には第１の金属線材
の片面に第２の金属線材を被着したり、第１の金属線材
のまわりを第２の金属線材で被ったりするのがよい。通
常、半導体べレットのパッドはＡそで、リードの先端は
コバールでそぜぞれ作られるので、本発明の好ましい実
施例に於けるワイヤで使用される材質は、第１の金属、
即ちパッド側接合用としては、Ａぞ，Ａｕ，Ａｇ，Ｃｕ
等であり、第２の金属則ちリード側接合用としては、Ｆ
ｅステンレススチール、４２アロイ、コ／ゞール、Ｓｕ
，Ｃｕ，Ａ仏Ａそ，Ａタ等である。That is, if a material that does not form an intermetallic compound with the pad is selected as the first metal, a material that does not form an intermetallic compound with the tip of the lead is selected as the second metal. It is preferable that the first metal sub-moat material and the second metal wire be joined by a clad wire. Specifically, the second metal wire may be attached to one side of the first metal wire, or the second metal wire may be bonded to the first metal wire. It is preferable to cover the metal wire with a second metal wire. Generally, the pads of the semiconductor pellet are made of A-sleeves and the tips of the leads are made of Kovar, so the materials used for the wire in the preferred embodiment of the present invention are the first metal,
That is, for pad side bonding, Azo, Au, Ag, Cu
etc., and for the second metal, ie, lead side bonding, F
eStainless Steel, 42 Alloy, Coal/Gal, Su
, Cu, A Buddha A so, A Ta, etc.
これ等の金属のうち異なるもの同士を任意に組み合せる
ことにより、本発明のボンディングワイヤが形成される
。The bonding wire of the present invention is formed by arbitrarily combining different metals among these metals.
以下、本発明の一実施例を図に基づき説明する。Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図及び第２図は、３本で１組のりードを有するリー
ドフレームにおいて、中央リード１に半導体べレット２
を固着し、このべレツトに形成されたＡ〆パッド３と中
央リードの両側のりード（材質コバール）４とを本発明
に係わるボンディングワイヤ５にて熱圧着接続した状態
を示している。1 and 2 show a lead frame having a set of three leads, with a semiconductor pellet 2 attached to the center lead 1.
The figure shows a state in which the A-stop pad 3 formed on the bellet and the leads (made of Kovar) 4 on both sides of the center lead are connected by thermocompression using the bonding wire 5 according to the present invention.
第１図が上面図で、第２図が第１図ロー０線断面図であ
る。第３図は、ボンディングワイヤ５の断面図で、第１
の線材６を構成する第１の金属はＡ夕、第２の線村７を
構成する第２の金属はコバールである。FIG. 1 is a top view, and FIG. 2 is a sectional view taken along the line 0 in FIG. 1. FIG. 3 is a cross-sectional view of the bonding wire 5.
The first metal constituting the wire rod 6 is A-metal, and the second metal constituting the second wire rod 7 is Kovar.
この様な構造のワイヤをべレツトのパッド及びリード先
端部に接続した個所の拡大図を第４図に示している。パ
ッド側に熱圧着されるワイヤの金属はＡそ線材６で、リ
ード先端部に熱圧着される金属はコバール線材７である
。この例では、当然ボンディングワイヤ５は中間部で１
８０ｏ回転させられる。本発明に係わるボンディングワ
イヤ５を使用し、実施例で示された様にパッド及びリー
ド‘こワイヤをボンディングすれば、同種金属同士の熱
圧着であるため、金属間化合物は生成されず、それに起
因する接合部の脆弱化は阻止される。FIG. 4 shows an enlarged view of the portion where the wire having such a structure is connected to the pad of the bellet and the tip of the lead. The metal of the wire that is thermocompression bonded to the pad side is A-strip wire 6, and the metal that is thermocompression bonded to the lead tip is Kovar wire 7. In this example, naturally the bonding wire 5 is 1 in the middle part.
Rotated 80o. If the bonding wire 5 according to the present invention is used and the pad and lead wire are bonded as shown in the example, since the same type of metals are bonded by thermocompression, intermetallic compounds will not be generated, and no intermetallic compounds will be generated. weakening of the joint is prevented.
更に、従来の様なりードフレーム先端部のメッキ等のわ
ずらわしい表面処理作業も不要となる。Furthermore, there is no need for troublesome surface treatment operations such as plating the tip of the curved frame, which is required in the past.
本発明の実施例では、ボンディングワイヤは１８０ｏ回
転してそれぞれ接合させたが、１８０ｏ回転せずに、第
５図に示す如く、直接、例えば超音波溶接しても、接合
部の約半分がコバール同士の接合となるため、従来に比
較して接合強度は格段に高められることになる。In the embodiment of the present invention, the bonding wires were rotated 180 degrees to join each other, but even if the bonding wires were directly welded, for example by ultrasonic wave, as shown in FIG. Since the two are bonded together, the bonding strength is significantly increased compared to the conventional method.
第１図乃至第６図は、本発明の実施態様を説明する図で
、第１図及び第２図は、ベレットのパッドとりードとを
ワイヤで接合した状態を示し第１図はその上面図、第２
図は第１図の０−ロ線断面図、第３図は本発明に係わる
ワイヤの断面図、第４図は接合部拡大断面図、第５図は
、本発明の他の実施態様の説明図で接合部拡大断面図で
ある。
１，４・・・・・・リードフレーム、２・・・・・・半
導体べレツト、３……パッド、５……ボンディングワイ
ヤ、６・・・・・・Ａそ線材、７・・・・・・コバール
線材。
第１図第２図
第３図
第４図
第５図1 to 6 are diagrams for explaining embodiments of the present invention, and FIGS. 1 and 2 show the state in which the pad and lead of the bullet are joined with a wire, and FIG. 1 shows the top surface thereof. Figure, 2nd
The figures are a cross-sectional view taken along the line 0-B of FIG. 1, FIG. 3 is a cross-sectional view of the wire according to the present invention, FIG. 4 is an enlarged cross-sectional view of the joint, and FIG. 5 is an explanation of another embodiment of the present invention. The figure is an enlarged sectional view of the joint. 1, 4...Lead frame, 2...Semiconductor bellet, 3...Pad, 5...Bonding wire, 6...A straight wire, 7... ... Kovar wire. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5
Claims (1)
１及び第２のボンデイング予定部の間を電気的・機械的
に接続するためのボンデイングワイヤであつて、前記第
１のボンデイング予定部の金属との間で良好なボンダビ
リテイを示す第１の金属からなる半円形断面の第１の線
材と、前記第２のボンデイング予定部の金属との間で良
好なボンダビリテイを示す第２の金属からなり、前記第
１の線材その軸方向に沿つて固着された半円形断面の第
２の線材とをそなえたボンデイングワイヤ。1 A bonding wire for electrically and mechanically connecting a first and a second bonding area each made of different metals, the bonding wire having a bonding wire that is connected to the metal of the first bonding area. a first wire rod having a semicircular cross section made of a first metal that exhibits good bondability between the wire rod and a second metal that exhibits good bondability between the metal of the second bonding scheduled portion; A bonding wire comprising a first wire and a second wire having a semicircular cross section fixed along the axial direction of the first wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52099594A JPS6022826B2 (en) | 1977-08-22 | 1977-08-22 | bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52099594A JPS6022826B2 (en) | 1977-08-22 | 1977-08-22 | bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5433659A JPS5433659A (en) | 1979-03-12 |
| JPS6022826B2 true JPS6022826B2 (en) | 1985-06-04 |
Family
ID=14251413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52099594A Expired JPS6022826B2 (en) | 1977-08-22 | 1977-08-22 | bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6022826B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225450A (en) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | Manufacture of semiconductor device |
-
1977
- 1977-08-22 JP JP52099594A patent/JPS6022826B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5433659A (en) | 1979-03-12 |
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