JPS6023463B2 - Manufacturing method of image pickup tube target - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a photoconductive green picture tube target.

When manufacturing an image pickup tube target, Zn, 1xCdxS, and ZnS are deposited on a glass substrate having a transparent conductive film.
A film consisting of CdTe, CdS, ZS, etc. is deposited as a first layer, and a film mainly composed of CdTe is deposited as a second layer.

Furthermore, after forming a (ZnTe), 1u (IQTe3)u film as a third layer on the second layer, heat treatment is performed in a vacuum or in an inert gas. The image pickup tube target obtained by such a secondary manufacturing method has characteristics such as high photosensitivity, low floor current, and low afterimage.

However, the image pickup tube target manufactured by this conventional manufacturing method has the disadvantage that small scratches occur when the temperature rises when used in a television camera. In general, in a blocking type daughter tube, scaling occurs below a certain target voltage (the voltage at which the competition disappears is defined as Vmin), and point scratches occur when the voltage exceeds a certain target voltage (this target voltage is defined as Vmax). do). This Vmin
The range between Vmax and Vmax is the usable target voltage and is called voltage tolerance. Since Vmjn and Vmax change depending on the temperature, spot scratches may occur in the television camera during use as described above. Therefore, it is necessary to make the voltage tolerance as large as possible. In order to eliminate the above-mentioned drawbacks, the present invention provides a method for manufacturing an image pickup tube target that can reduce the voltage of Vmjn and increase the target voltage tolerance. It is.

Hereinafter, the manufacturing method of the present invention will be explained using Examples.

Embodiment 1 FIG. 1 shows a cross-sectional view of a twill tube target according to the present invention.

A ZnSe film 3 is deposited as a first layer on a glass substrate 1 having a transparent conductive film 2 by a vacuum evaporation method at a substrate temperature of 150-3.
The film is deposited to a thickness of 0.05 to 0.2 mm in the range of 0.00 qo. Next, a film 4 made of CdTe is placed on the first layer 3 as a second layer, and the substrate temperature is set in the range of 100 to 300 degrees Celsius.
Aoi wears thickly on the Buddhist fence. Then, this film was heated at 5° C. in vacuum or in Ar as an inert gas in the range of 278 to 550 oo.
Heat treatment is performed for ~6 minutes. After that, “Furthermore, on top of that (Z
1.0 to 25 at a substrate temperature of 100 to 30 C with a third layer of pus 5 consisting of nTe), cry u (military also Te3) u.
Deposit a thick layer of Buddha. Thereafter, heat treatment is performed in a vacuum or inert gas at a temperature of 400 to 600oC to deposit a layer of SQS3 with a film thickness similar to that of Q1 on the third layer 5 for the sake of beam landing. Table 1 shows the results of various characteristics of 2'3 inch pseudo-picture tubes using the picture tube target manufactured by the manufacturing method of the present invention and the moat image tube target manufactured by the conventional manufacturing method.

1 in Table 1 indicates 3 in vacuum or inert gas after the second layer is deposited.
It can be seen that the target voltage tolerance is increased compared to A made by the conventional manufacturing method. Table 1 Example Q A ZnS film 3 was deposited as a first layer on a glass substrate 1 having a transparent conductive film 2 by vacuum evaporation at a substrate temperature of 150 to 30.
Vapor deposition is performed to a film thickness of 0.03 to 0'lAm in the range of 0 to 0.

Next, a film 4 made of CdTe is deposited as a second layer on the first layer at a substrate temperature in the range of 100 to 3000°.
27,000 to 5 in vacuum or Ar gas
Heat treatment is performed in the range of 50oC. After that, a film 5 made of (NnTe), 1u(1-Te3)u is added thereon as a third layer, and the temperature is 1.0 at a substrate temperature in the range of 100 to 300q0.
Deposit to a film thickness of ~2.5 degrees. After that, a heat treatment is performed in a vacuum or in an inert gas at a temperature of 400 to 60,000, and an SQS3 film with a thickness of about 0.1 μm is deposited on the third layer to improve beam landing. . The results are shown in Tables B and 2 of Table 1, and as compared to the conventional manufacturing method, manufacturing method 2 of the present invention has an increased target voltage tolerance. Example m A ZnSe film 3 is deposited as a first layer on a glass substrate 1 having a transparent conductive film 2 by vacuum evaporation at a substrate temperature of 150 to 30.
000 to a film thickness of 0.05 to 0.2 skin thickness.

Then on the first layer (CdTe), onet(ln2Te3)b
The substrate temperature is 100 to 30 pi
It is deposited to a film thickness of 0.3 to 2.0 mounds within the range of . Then, this film is heat treated in a vacuum at a temperature of 270 to 5500 C for 5 to 6 cycles. Then on top of that (ZnTe),
A film 5 consisting of 1 u (1 to Te 3 ) u is used as the third layer and is deposited to a film thickness of 1.0 to 2.5 mm at a substrate temperature in the range of 100 to 300 oC. Thereafter, a heat treatment is performed in a vacuum or in an inert gas at a temperature of 400 to 600 degrees Celsius, and a film of Sb2S3 having a thickness of about 0.1 mm is deposited on the third layer in order to improve beam landing. The results are shown in C and 3 of Table 1, and it can be seen that the target voltage tolerance is increased in manufacturing method 3 of the present invention compared to conventional manufacturing method C. FIG. 2 shows the temperature dependence of Vmax and Vmin of an image pickup tube manufactured by a conventional manufacturing method and an image pickup tube manufactured by the manufacturing method of the present invention.

In the same figure, the curve 1,0' is Vmin and V according to the present invention.
1' and 0' are conventional. As described above, Vmin and Vmax are highly dependent on temperature, but there is a big difference in Vmin between the present invention and the conventional one, and the target flea pressure margin is sufficiently expanded in the present invention, and can be used in a wide temperature range. Good image quality can be obtained.
As mentioned above, as is clear from Table 1 and Figure 2, the image pickup tube that was formed with the second layer and then subjected to heat treatment in vacuum or inert gas,
It can be seen that the target voltage tolerance is larger than that of conventional image pickup tubes without degrading characteristics such as afterimages and floor current.

Although an SQS3 film with a film thickness of about 0.1 mound is formed on the third layer, the same result is obtained even without the SQS3 thickness. In addition, in the heat treatment step after the formation of the second layer, the heat treatment was performed twice.
When testing was carried out in a range other than 70 to 550 oo, there was almost no change in voltage tolerance compared to the conventional one. As explained above, after forming a second layer of a film mainly composed of CdTe on the first layer having a band cap larger than that of CdTe, the film was deposited for 270 minutes in a vacuum or an inert gas. The image pickup tube target manufactured by the manufacturing method of the present invention, which includes the step of heat treatment in the range of ~5500C, has a large target voltage tolerance, so good image quality can be obtained in a wide temperature range, making it very effective in practice. It is.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing the basic structure of a rice bran image tube target according to the present invention, and FIG. 2 shows the temperature of Vn phantom FIG. 3 is a diagram showing characteristics. 1...Glass substrate, 2...Transparent conductive film, 3...C
Membrane with bandgap larger than dTe, 4...
・Film mainly composed of CdTe, 5...Zn, ln, T
A film whose main component is an alloy or compound of e. Figure 1 Figure 2

Claims (1)

[Claims] 1. A step of depositing a film having a band gap larger than that of CdTe as a first layer on a glass substrate having a transparent conductive film, and a step of depositing a material mainly composed of CdTe on the first layer. a step of depositing a film as a second layer,
Further, a step of depositing a film made of a substance mainly composed of an alloy or a compound of Zn, In, and Te on the second layer as a third layer, and after forming the third layer, the film is heated in a vacuum or in an inert gas. A method for producing an image pickup tube target comprising a step of heat treatment in a vacuum or an inert gas after the step of depositing the second layer. Production method. 2 The heat treatment step after the step of depositing and forming the second layer is 2
2. The method of manufacturing an image pickup tube target according to claim 1, wherein the manufacturing method is carried out within a temperature range of 70 to 550°C.