JPS6028384B2 - resist developing device - Google Patents
resist developing deviceInfo
- Publication number
- JPS6028384B2 JPS6028384B2 JP55000539A JP53980A JPS6028384B2 JP S6028384 B2 JPS6028384 B2 JP S6028384B2 JP 55000539 A JP55000539 A JP 55000539A JP 53980 A JP53980 A JP 53980A JP S6028384 B2 JPS6028384 B2 JP S6028384B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- developer
- nozzle
- liquid
- developing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
この発明はしジスト現像装置にか)り、特に半導体ウェ
ハに被着されたレジスト層の現像に適する装置に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a resist developing apparatus, and more particularly to an apparatus suitable for developing a resist layer deposited on a semiconductor wafer.
半導体素子の製造工程において、フオトェッチング技術
が広く用いられている。Photo-etching technology is widely used in the manufacturing process of semiconductor devices.
フオトェッチングに用いられるフオトレジストにはネガ
タイプとポジタィプとがある。半導体素子の構造が次第
に小型化、高密度化するにつれ微細加工の必要が高まり
つ)あるが、このために微細エッチングに通するポジレ
ジストが多用される傾向にある。ポジレジストにおいて
は現像条件の管理、就中現像液温が最も重要な要素であ
る。従来の装置で現像液温を調整するものの概略図を第
1図に示す。図において、1は現像液容器、2は現像液
を装置内に送出するためのたとえば送液ポンプ、3は現
像液に温度調整を施す調温部、4は装置内に流通させる
現像液の液量調整を施す調整バルブ、5はノズルで、温
度と液量とが調整された現像液を半導体ゥェハ10に噴
射する如く配置される。なお、前記各部の間は現像液を
通過させる導管,6,6′・・・によって接続される。
なお、図中に破線で示すように、調整バルブ4を三方同
バルブとし、その一方の導路を導管7で送液ポンプ2に
接続させて必要に応じ液の環流を計りうるようにして液
の温度の低下を防止し、特にノズルからの現像液の吐出
を停止している間に調整部から液量調整バルブに至る導
管内に残留して温度の低下した現像液をそのまま吐出再
開に際してノズルから吐出させる如きことを避けうるよ
うにすることができる。現像液を装置内に送出する手段
として上記装置では送液ポンプ2を用いているが、現像
液容器を装置の最高所に配置すれば送液ポンプを用いる
ことなく液を送出できる。上に述べたような現像装置に
おいて、ノズルから吐出される現像液の吐出量と温度と
の関係はたとえば第2図に示すようになっている。There are two types of photoresists used for photoetching: negative type and positive type. As the structures of semiconductor devices become smaller and more dense, the need for microfabrication is increasing, and for this purpose, positive resists that can be subjected to microetching are increasingly being used. For positive resists, the most important factor is the management of development conditions, especially the temperature of the developer. FIG. 1 shows a schematic diagram of a conventional device for adjusting the developer temperature. In the figure, 1 is a developer container, 2 is, for example, a liquid sending pump for sending the developer into the device, 3 is a temperature control unit that adjusts the temperature of the developer, and 4 is a developer liquid to be distributed in the device. An adjustment valve 5 for adjusting the amount is a nozzle, which is arranged so as to inject a developing solution whose temperature and liquid amount have been adjusted onto the semiconductor wafer 10. The respective parts are connected by conduits 6, 6', . . . through which the developer passes.
In addition, as shown by the broken line in the figure, the regulating valve 4 is a three-way valve, and one conduit is connected to the liquid feeding pump 2 through a conduit 7 so that the liquid circulation can be measured as necessary. In particular, when discharging developer from the nozzle is stopped, the developer that remains in the conduit leading from the adjustment unit to the liquid volume adjustment valve and whose temperature has decreased is removed from the nozzle when discharging is resumed. It is possible to avoid such a situation as causing the liquid to be discharged from the inside. Although the above-mentioned apparatus uses a liquid feed pump 2 as a means for sending the developer into the apparatus, if the developer container is placed at the highest point of the apparatus, the liquid can be sent without using a liquid feed pump. In the developing device as described above, the relationship between the amount of developer discharged from the nozzle and the temperature is shown, for example, in FIG.
すなわち、縦軸に示される現像液の温度が現像に所望さ
れる設定温度t℃に達するまでに横軸に示される吐出量
Voccがノズルから吐出される。この吐出量Vocc
に相当する液はゥェハに噴射させてはならないので、こ
の吐出期間中は不良のウェハと同型の部材等で吐出液を
受けてウェハの保持装置の汚損を防止していた。このた
め、工程が煩雑になり自動化の大きな障害となっていた
。この発明は従来のレジスト現像装置の欠点を改良し、
工程の管理を容易にし、かつ自動化にも適するレジスト
現像装置を提供するものである。That is, the discharge amount Vocc shown on the horizontal axis is ejected from the nozzle until the temperature of the developer shown on the vertical axis reaches the set temperature t° C. desired for development. This discharge amount Vocc
Since the liquid corresponding to the wafer should not be injected onto the wafer, during this ejection period, the ejected liquid is received by a member of the same type as the defective wafer to prevent the wafer holding device from becoming contaminated. This has made the process complicated and has been a major obstacle to automation. This invention improves the drawbacks of conventional resist developing devices,
The present invention provides a resist developing device that facilitates process management and is also suitable for automation.
この発明は従来のレジスト現像装置におけるノズルに現
像液液温を検知する検温部を設け、液温が設定温度域内
の場合に限ってノズルと半導体ウェハとの間に進退自在
に設けたシャツ夕を避退させるようにしたシャツ夕およ
びその駆動部を設けたことを特徴とする。次にこの発明
を1実施例につき図面を参照して詳細に説明する。This invention provides a temperature measuring section for detecting the temperature of the developing solution in the nozzle of a conventional resist developing device, and only when the solution temperature is within a set temperature range, a shirt plate is installed between the nozzle and the semiconductor wafer so that it can move forward and backward. The present invention is characterized by the provision of a retractable shirt sleeve and its driving section. Next, one embodiment of the present invention will be explained in detail with reference to the drawings.
なお、第3図は1実施例を示す概略図で、すでに従釆の
第1図に示された一部、すなわち現像液容器1、現像液
送出手段の一例の送液ポンプ2、調温部3、調整バルブ
4、ノズル5、導管6については変らないので、図に同
じ番号をもって示し説明を省略する。次に、図中太線を
もって示した発明の要部を詳述する。11はノズル5に
設けられた熱電対の如き検温部、12はシャツ夕で、第
4図に示すようにノズルから吐出される現像液を受けと
める液受け皿の形状をもたせ、これがたとえば間欠駆動
型モータ12aの軸に取付けられている。Note that FIG. 3 is a schematic diagram showing one embodiment, and shows some parts already shown in FIG. 3. Since the regulating valve 4, nozzle 5, and conduit 6 are the same, they are shown with the same numbers in the figure and their explanations will be omitted. Next, the main parts of the invention indicated by thick lines in the figure will be explained in detail. Reference numeral 11 indicates a temperature measuring unit such as a thermocouple provided in the nozzle 5, and 12 indicates a temperature measuring unit, which has the shape of a liquid receiving tray for receiving the developer discharged from the nozzle, as shown in FIG. It is attached to the shaft of 12a.
上記検温部の検出した現像液の温度が設定温度範囲内(
レジストによって指定されている現像温度で、たとえば
300 土0.5qoの範囲内)である場合に限って検
温部から送られる信号によりモータ12aが駆動され、
シャツ夕をノズルと半導体ウェハとの間から避退させる
。ノズルからの液の吐出が開始されても前記した吐出量
Vocc相当の温度が未だ設定温度に達していない液が
吐出されている間は、シャツ夕12がノズルの前面に位
遣していて吐出される液を受け止め、やがて液温が所望
の温度まで上昇したときはシャツ夕12が自動的に避退
して液がゥェハに噴射されるようにする。したがってノ
ズルから吐出される液が設定温度に達する以前から、ウ
ェハを現像液の噴射をうけるべき場所に位置させておい
ても差支えない。なお、このシャツ夕の駆動はモータの
回転に限らず、カム動作、ラック・ピニオン対隅、ェヤ
シリンダ、スプリング等またはこれらの組み合わせによ
って回転、階動(前進、後退)等を自在に選択してよい
。この発明によれば、ウェハに作用する現像液の液温を
設定温度範囲内に限定でき、特に現像に好適する温度範
囲の狭いポジタィプのレジストに箸効がある。The temperature of the developer detected by the above thermometer is within the set temperature range (
The motor 12a is driven by a signal sent from the temperature measuring unit only when the developing temperature specified by the resist is within the range of 300°C and 0.5qo, for example.
The shirt is evacuated from between the nozzle and the semiconductor wafer. Even after the discharge of the liquid from the nozzle has started, the temperature equivalent to the above-mentioned discharge amount Vocc has not yet reached the set temperature.While the liquid is being discharged, the shirt cover 12 is positioned in front of the nozzle and the liquid is not discharged. When the temperature of the liquid rises to a desired temperature, the shirt cover 12 is automatically retracted so that the liquid is sprayed onto the wafer. Therefore, even before the liquid ejected from the nozzle reaches the set temperature, the wafer may be positioned at a location where the developer should be sprayed. Note that the drive of this shaft is not limited to the rotation of the motor, but may freely select rotation, stepwise movement (forward, backward), etc. by cam operation, rack and pinion pairing corners, air cylinder, spring, etc., or a combination thereof. . According to this invention, the temperature of the developer acting on the wafer can be limited within a set temperature range, and is particularly effective for positive type resists having a narrow temperature range suitable for development.
また、現像条件の管理が容易で人手を要しないため工程
の自動化に好適する。さらに、現像処理の間隔が生じた
場合でも、工程の再開に吐出液を不良ウェハや代替部材
で受ける必要もない。なお、この発明の装置は実施例に
限定されるものでなく、ネガタィプのレジスト、その他
回転塗布等に広く応用できる。In addition, it is suitable for process automation because it is easy to manage development conditions and does not require human labor. Furthermore, even if there is an interval between development processes, there is no need to receive the ejected liquid on a defective wafer or a substitute member when restarting the process. Note that the apparatus of the present invention is not limited to the embodiments, but can be widely applied to negative type resists, other spin coatings, and the like.
第1図は従来のレジスト現像装置の概略を示す図、第2
図は現像液吐出量と液温との関係を示す線図、第3図は
1実施例のレジスト現像装置の概略を示す図、第4図は
しジスト現像装置のシャツタ装置部の一部を示す斜視図
である。
なお、図中における同一符号は同一または相当部分を夫
々示すものとする。1・・・・・・現像液容器、2・・
・・・・送液ポンプ、3・・・・・・調温部、4・・・
・・・調整バルブ、5・・…・ノズル、6,7・…・・
導管、10・・・・・・半導体ウェハ、11・・・・・
・検温部、12…・・・シャツ夕、12a・・・・・・
シャツ夕のモータ、13・・・・・・シャツタ駆動部。
第1図第2図
第3図
第4図Figure 1 is a diagram showing the outline of a conventional resist developing device, Figure 2
The figure is a diagram showing the relationship between the amount of developer discharged and the liquid temperature, Figure 3 is a diagram showing the outline of a resist developing device according to one embodiment, and Figure 4 is a diagram showing a part of the shutter device section of the resist developing device. FIG. Note that the same reference numerals in the figures indicate the same or corresponding parts, respectively. 1...Developer container, 2...
...Liquid pump, 3...Temperature control section, 4...
...Adjustment valve, 5...Nozzle, 6,7...
Conduit, 10... Semiconductor wafer, 11...
・Temperature measurement section, 12...Shirt evening, 12a...
Shirt drive motor, 13... Shirt drive unit. Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
容器から送出される現像液の液量を調整する調整バルブ
と、温度と液量とが調整された現像液を対向した半導体
ウエハに噴射するノズルとを備えたレジスト現像装置に
、ノズルに近接して設けられノズルから噴射されるとき
の現像液の温度を検出する検温部と、ノズルと半導体ウ
エハとの間に進退自在に設けられたシヤツタと、前記検
温部からの信号によつて制御され検温部にて検出した液
温が設定温度範囲内にある場合に限つて前記シヤツタを
ノズルと半導体ウエハとの間の位置から側方へ避退させ
るシヤツタ駆動部とからなるシヤツタ装置が併設された
レジスト現像装置。1 a developer container, a temperature control section that adjusts the temperature of the developer,
A resist developing device is equipped with an adjustment valve that adjusts the amount of developer sent out from a container, and a nozzle that injects the developer whose temperature and amount have been adjusted onto the opposing semiconductor wafer. a temperature-measuring section that detects the temperature of the developer when it is injected from the nozzle; a shutter that is movable forward and backward between the nozzle and the semiconductor wafer; and a temperature-measuring section that is controlled by signals from the temperature-measuring section. A resistor equipped with a shutter device comprising a shutter drive section that evacuates the shutter laterally from a position between the nozzle and the semiconductor wafer only when the liquid temperature detected by the section is within a set temperature range. Developing device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55000539A JPS6028384B2 (en) | 1980-01-09 | 1980-01-09 | resist developing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55000539A JPS6028384B2 (en) | 1980-01-09 | 1980-01-09 | resist developing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698826A JPS5698826A (en) | 1981-08-08 |
| JPS6028384B2 true JPS6028384B2 (en) | 1985-07-04 |
Family
ID=11476545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55000539A Expired JPS6028384B2 (en) | 1980-01-09 | 1980-01-09 | resist developing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6028384B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10713723B2 (en) | 2001-06-14 | 2020-07-14 | Trading Technologies International, Inc. | Electronic spread trading tool |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117733A (en) * | 1983-11-30 | 1985-06-25 | Canon Hanbai Kk | Developing device for wafer |
| US4827867A (en) * | 1985-11-28 | 1989-05-09 | Daikin Industries, Ltd. | Resist developing apparatus |
-
1980
- 1980-01-09 JP JP55000539A patent/JPS6028384B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10713723B2 (en) | 2001-06-14 | 2020-07-14 | Trading Technologies International, Inc. | Electronic spread trading tool |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698826A (en) | 1981-08-08 |
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