JPS6032812B2 - photodetector - Google Patents
photodetectorInfo
- Publication number
- JPS6032812B2 JPS6032812B2 JP53014256A JP1425678A JPS6032812B2 JP S6032812 B2 JPS6032812 B2 JP S6032812B2 JP 53014256 A JP53014256 A JP 53014256A JP 1425678 A JP1425678 A JP 1425678A JP S6032812 B2 JPS6032812 B2 JP S6032812B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- light
- photodetector
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
【発明の詳細な説明】
本発明は光通信装置等に用いる高速、高感度な光検出器
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-speed, highly sensitive photodetector used in optical communication devices and the like.
光検出器として半導体材料を用いたフオトダィオード（
以下ＰＤと呼ぶ）は高速、高感度な光通信用受光器とし
て重要視されている。A photodiode (photodiode) using a semiconductor material as a photodetector
PD (hereinafter referred to as PD) is regarded as important as a high-speed, highly sensitive optical receiver for optical communications.
０．８〜０．９ｙｍ波長帯光通信の半導体光検出器とし
てＳｊ結晶を用いたＰＤが広く使われているが、０．８
〜０．９仏ｍ波長帯の光を有効に吸収するためには空乏
層が数１０一ｍ必要である。PDs using Sj crystals are widely used as semiconductor photodetectors for optical communication in the 0.8-0.9ym wavelength band, but
In order to effectively absorb light in the ~0.9 m wavelength band, a depletion layer of several 101 m is required.
このため高速化は空乏層内を走行するキャリアの走行時
間により限定されるが、それ以上に通常数１００仏ｍの
厚さを有する基板内に入射した光により生成したキャリ
アの拡散による応答が空乏層内を走行する時間と比較し
て遅く、この拡散による応答が存在するために高速化で
きない欠点がある。本発明はこのような欠点のない光通
信用として有用な光検出器を提供するもので、半導体基
板上に基板とは逆の導電型の光吸収半導体層を有し、さ
らに前記の光吸収半導体層上に選択的に形成されたＰＮ
接合面の下部に位置する基板部分が除去され、かつ前記
基板の表面に基板とは逆の導電型を示す層を形成したこ
とを特徴とする光検出器で、光の入射面下の基板を除去
することにより高速化することを目的とする光検出器で
ある。Therefore, the speed increase is limited by the travel time of the carriers traveling in the depletion layer, but more than that, the response due to the diffusion of carriers generated by the light incident on the substrate, which is usually several hundred feet thick, is depleted. It has the disadvantage that it is slow compared to the time it takes to travel within the layer and cannot be increased in speed due to the presence of a response due to this diffusion. The present invention provides a photodetector useful for optical communication without such drawbacks, which has a light-absorbing semiconductor layer on a semiconductor substrate of a conductivity type opposite to that of the substrate, and further includes a light-absorbing semiconductor layer having a conductivity type opposite to that of the substrate. PN selectively formed on the layer
A photodetector characterized in that a portion of the substrate located below the bonding surface is removed, and a layer exhibiting a conductivity type opposite to that of the substrate is formed on the surface of the substrate. This is a photodetector whose purpose is to increase the speed by removing
図に示すＰＤを施例にとり本発明について説明する。図
に於て１は厚さ３００仏ｍのＮ十型Ｓ弓基板である。こ
の基板上に気相成長を用いて２に示す不純物濃度２×１
び４仇‐３のＰ‐型Ｓｉ層を５０ムｍェピタキシヤル成
長する。３は熱酸化Ｓｉ０２膜を用いて選択的に燐を不
純物濃度１び９仇‐３程度の高濃度で０．３仏ｍ程度熱
拡散したＮ十型Ｓｉ層である。The present invention will be explained by taking the PD shown in the figure as an example. In the figure, 1 is an N-type S-bow board with a thickness of 300 mm. Using vapor phase growth on this substrate, impurity concentration 2×1 shown in 2.
A P-type Si layer of 4 and 3 layers was epitaxially grown to a thickness of 50 mm. 3 is an N0-type Si layer in which phosphorus is selectively thermally diffused using a thermally oxidized Si02 film at a high impurity concentration of about 1 and 9-3 and about 0.3 mm.
４は３と同様にＳｉ０２膜を用いて選択的に燐をイオン
注入し熱拡散により形成したＮ型Ｓｉ届であり、２と３
のＰＮ接合によるブレークダウン電圧以上のブレークダ
ウン電圧をこの２と４のＰＮ接合が有するように燐の注
入量と熱拡散を制制した層である。4 is an N-type Si layer formed by selectively ion-implanting phosphorus and thermal diffusion using a SiO2 film, similar to 3, and 2 and 3.
This is a layer in which the amount of phosphorus implanted and the thermal diffusion are controlled so that the PN junctions of 2 and 4 have a breakdown voltage higher than the breakdown voltage of the PN junction.
これにより３の層の周緑部の局所ブレークダウンを防止
している。５は２のｐ‐層表面において逆バイアス印加
の動作時に起こりうるｐ‐層のＮ層への反転を防止する
ために熱酸化Ｓｉ０２膜を用いて選択的にボ。This prevents local breakdown of the green part around layer 3. No. 5 is selectively etched using a thermally oxidized Si02 film on the surface of the p-layer of No. 2 to prevent the p-layer from inverting to the n-layer, which may occur during reverse bias application.
ンを不純物濃度１０１９伽‐３程度の高濃度で熱拡散し
熱処理により厚さ２山ｍとしたｐ＋層である。６はＳｉ
表面の熱酸化によるＳｉ０２膜層である。This is a p+ layer which is made to have a thickness of 2 m by heat treatment by thermally diffusing the impurity at a high impurity concentration of about 1019-3. 6 is Si
This is a Si02 film layer formed by thermal oxidation on the surface.
７は入射光の波長に対して糠反射となる条件を満足する
ような厚さを有するＳｉ３Ｎ４膜でありシラン系を用い
てＣＶＤにより形成した層である。Reference numeral 7 denotes a Si3N4 film having a thickness that satisfies the conditions for bran reflection with respect to the wavelength of incident light, and is a layer formed by CVD using a silane system.
８はアルミニウム務肴による電極である。8 is an electrode made of aluminum material.
９はＰＮ接合面上部外から光が入射しないように遮光す
る目的で設けたアルミニウム葵着膜である。Reference numeral 9 denotes an aluminum film deposited for the purpose of blocking light from entering from outside the upper part of the PN junction surface.
１０‘ま熱酸化Ｓｉ０２膜を用いて選択的にての基板を
エッチングにより除去した後に、不純物濃度１び９肌‐
８程度の高濃度でボロンを０．３ムｍ程度熱拡散したｐ
＋型Ｓｉ層である。After selectively removing the substrate by etching using a thermally oxidized Si02 film for 10 minutes, impurity concentrations of 1 and 9 were removed.
Boron is thermally diffused by about 0.3mm at a high concentration of about 8.
It is a + type Si layer.
１１はＡｕの蒸着膜で電極であると共に１０を通過した
入射光をこのＡｕ膜により反射して量子効率の増大を計
る効果を持つ層である。Reference numeral 11 denotes a deposited Au film, which serves as an electrode and also has the effect of increasing the quantum efficiency by reflecting incident light that has passed through 10 by this Au film.
このようにして作製した装置において、入射光面下部の
基板を除去したことにより光励起による遅い拡散電流成
分を除いたこと、また基板と光吸収半導体層を逆の導電
型にすることにより基板部に入った迷光の影響を除去で
き、高速性に優れ、更に反射金属膜により量子効率の増
大が計られ、光通用として優れた特性の光検出器が得ら
れる。以上Ｓｉを用いた光検出器の−実施例について述
べてきたが、光の入射方向を基板側にしても本発明の主
旨により高量子効率で高速性に優れた検出器を得ること
ができる。In the device fabricated in this manner, the slow diffusion current component due to photoexcitation was eliminated by removing the substrate below the incident light plane, and the substrate and the light-absorbing semiconductor layer were made of opposite conductivity type. It is possible to eliminate the influence of stray light that enters, it has excellent high speed, and the reflective metal film increases the quantum efficiency, making it possible to obtain a photodetector with excellent characteristics for optical applications. Although the embodiments of the photodetector using Si have been described above, it is possible to obtain a detector with high quantum efficiency and excellent high-speed performance according to the spirit of the present invention even if the incident direction of light is set to the substrate side.
図面の筋単な説明 図は本発明に基づく−実施例を示す構成図である。A simple explanation of the drawing The figure is a block diagram showing an embodiment based on the present invention.
Claims (1)
導体層を有し、更に前記光吸収層上に選択的に形成され
たＰＮ接合面の下部に位置する基板部分が除去され、か
つ前記基板の表面に基板とは逆の導電型を示す層を形成
したことを特徴とする光検出器。1. A light-absorbing semiconductor layer having a conductivity type opposite to that of the substrate is provided on a semiconductor substrate, and further, a portion of the substrate located below a PN junction surface selectively formed on the light-absorbing layer is removed, and A photodetector characterized in that a layer exhibiting a conductivity type opposite to that of the substrate is formed on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53014256A JPS6032812B2 (en) | 1978-02-10 | 1978-02-10 | photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53014256A JPS6032812B2 (en) | 1978-02-10 | 1978-02-10 | photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54107375A JPS54107375A (en) | 1979-08-23 |
| JPS6032812B2 true JPS6032812B2 (en) | 1985-07-30 |
Family
ID=11856001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53014256A Expired JPS6032812B2 (en) | 1978-02-10 | 1978-02-10 | photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6032812B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61229371A (en) * | 1985-04-04 | 1986-10-13 | Kokusai Denshin Denwa Co Ltd <Kdd> | Photo diode |
| JPS6218075A (en) * | 1985-07-17 | 1987-01-27 | Agency Of Ind Science & Technol | Photoelectric conversion device |
| NL8700370A (en) * | 1987-02-16 | 1988-09-16 | Philips Nv | RADIATION-SENSITIVE SEMICONDUCTOR DEVICE. |
| US5223919A (en) * | 1987-02-25 | 1993-06-29 | U. S. Philips Corp. | Photosensitive device suitable for high voltage operation |
| JPH06196727A (en) * | 1992-12-08 | 1994-07-15 | Terumo Corp | Photoelectric conversion device |
| US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
-
1978
- 1978-02-10 JP JP53014256A patent/JPS6032812B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54107375A (en) | 1979-08-23 |
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