JPS6033348B2 - solid state imaging device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state imaging device that decomposes a large image into pixels and obtains an image signal using a change in current as image information in order to read and scan a facsimile.

As a facsimile reading scanning method, there is a mechanical scanning method that uses a rotating cylinder, a rotating mirror, or a movable optical fiber to perform mechanical scanning, but it is difficult to increase the speed because of the movable parts.

Electrical reading devices include those that use electron tubes such as flying spot tubes and Pisicon image pickup tubes, but they are expensive and require troublesome maintenance, so high-speed devices use photodiodes consisting of many photodiodes. A solid-state imaging device using an array is used. However, since it is composed of a large number of photodiodes, it is expensive, and it is difficult to manufacture large-sized ones. Therefore, the original picture is 1/10~
The image signal was extracted by reducing the size to 1/I000. An object of the present invention is to obtain a solid-state imaging device that can obtain an image signal from a large-sized image with a small reduction ratio.

To achieve this objective, the device of the invention comprises a photovoltaic active region made of crystalline silicon uniformly formed on a conductive substrate and a photovoltaic active region made of crystalline silicon arranged in rows on the amorphous silicon layer. 4. It is equipped with a transparent conductive wall with an area of 4. and a connecting conductor provided so as to surround each of the transparent conductive films. It is characterized in that it is taken out sequentially through the

Embodiments of the present invention will be described below with reference to the drawings.

In FIGS. 1 and 2, reference numeral 1 denotes a substrate made of, for example, stainless steel, on which an amorphous silicon layer 2 is formed by decomposing monosilane (Si ratio) by glow discharge. If the flatness of the substrate surface is improved, the length can be reduced to 30 mm.
It is also possible to uniformly produce an amorphous silicon film with a thickness of about lrm on a certain substrate. Amorphous silicon layer 2
is n-type, and a Schottky barrier metal (for example, a platinum thin film) 3 is deposited thereon to form a photoelectrically active region 11 that generates an electromotive force when irradiated with light. Instead of the Schottky barrier metal, an n-type amorphous silicon film may be provided to form a pn junction with the p-type film to form the photoelectrically active region 11. 1 and 2 on top of the Schottky barrier metal 3.
As shown in the figure, transparent electrodes 4 having a small area and a thickness of, for example, 700 A are provided in a row. The transparent electrode 4 is made of Sn02 or ln203, for example, and is made into a small area by vapor deposition using a mask or by selective etching after vapor deposition over one surface. The dimensions of the transparent electrode 4 can be selected from 10 to 500 m on a side depending on the resolution. Connected to each transparent electrode 4 is a connecting conductor 5 made of, for example, silver and made by vapor deposition. The connection conductor 5 is provided so as to surround the electrode 4 for connection with the electrode 4. As a result, light is blocked at the periphery of each pixel, and a high-resistance region between the pixels is formed where light does not strike. By providing the connecting conductor in this manner, adjacent electrodes (pixels) are more completely separated, and resolution is improved. In this way, it is possible to form a photodiode array with a length of 10 to 300 rms and a width of 10 to 500 rms.The original image or a scaled image of the original image is projected onto this photodiode array to transmit image information. By scanning each electrode 4 with a clock pulse, one line of image signals can be taken out from the substrate 1 through the connection terminal 6 on a daily basis. Further image information is transferred to electrode 4.
By moving the image signal by the width of , it is possible to extract image signals for each line next to the top of the shoe and obtain one image signal. Although not shown, the photoelectric conversion efficiency can be increased by coating the photodiode array with an antireflection film. As mentioned above, the present invention applies the manufacturing technology of solar cells using amorphous silicon to the manufacturing of solid-state imaging devices. To make it possible to inexpensively manufacture a long solid-state imaging device that can be taken out.

Therefore, it can be applied not only to high-speed facsimiles instead of conventional photodiode arrays, but also to copying machines and image recognition devices. In the above description, a single row of diode arrays has been described, but a plurality of rows may be arranged in parallel to provide image information over a large area to the diode array at the same time.

[Brief explanation of drawings]

FIG. 1 is a front view of an embodiment of the present invention, and FIG. 2 is a plan view of the same. 1...Substrate, 2...Amorphous silicon layer, 3...Schottky barrier metal, 4...
Transparent conductive film electrode, 5... Connection conductor, 6...
··Connecting terminal. Fig. 1 Fig. 2

Claims (1)

[Claims] 1. A photoelectrically active region made of amorphous silicon uniformly formed on a conductive substrate, small-area transparent conductive films arranged in rows on the amorphous silicon layer, and each transparent conductive film. and connecting conductors surrounding each of the
A solid-state imaging device characterized in that a photocurrent flowing between each of the electrodes and the substrate is sequentially extracted via the connecting conductor by irradiation of light from an image.